生命体能量代谢过程中的电子传递与光合作用中电子传递反应的化学模拟的ESR研究

本文采用电子自旋共振ESR方法，结合运用自旋捕捉技术（Spin Trapping-ESR）和时间分辨手段(TRESR)，针对某些与生命能量代谢体系电子传递及其化学模拟反应的研究相关的几个重要问题(包括高等植物光系统II颗粒内超氧阴离子自由基(O2-)的产生机制、光合作用模型体系电子传递和跨膜电子传递反应动力学、传统中药有效成分提取物抗氧化分子机理与构效关系），从分子设计、实验方法、分子结构理论、反应机理与动力学分析等几个角度进行了较为系统的探索性研究，并获得以下几点新颖的研究成果： 1．光系统II颗粒内光抑制过程中O2-生成的分子机制 (1)．首先，发展了新Spin Trapping-ESR技术，研制一系列性能优良的新型磷酰基取代的吡咯啉类活性氧自旋捕捉剂，并通过对比研究其捕捉性能，证明磷酰基取代的吡咯啉类捕捉剂比常用的DMPO捕捉剂的捕捉能力强、速度快，自由基加合物稳定性高，适合于光系统II体系中活性氧的研究。 (2)．在PSII颗粒的光抑制过程中成功地检测到了O2-，并探讨了影响O2-产生的诸多因素。包括氧分子的浓度、1O2增强剂与淬灭剂、pH值效应、电子传递链阻断剂的影响。首次提出了O2-生成的分子机制：PSII颗粒中产生的O2-是光系统II中反应中心产生的1O2与次级电子受体QA形成的质子化半醌自由基反应的产物。此外，设计了一套化学模拟体系，进一步证明了02-的生成的分子机制。 2. 中国传统性中药的酚类提取物抗氧化剂的抗氧化分子机理与构效关系研究 用理论计算与实验结合的手段，研究了酚类抗氧化剂与02的反应。探讨了酚类抗氧化物的分子结构与其抗氧化活性的构效关系，为评价抗氧化剂的抗氧化能力提供了一定的依据。 3．有关光合作用模型体系电子传递和跨膜电子传递反应动力学的探索性基础研究 (1)．对原有的电子自旋共振谱仪进行改造，自行设计并研制一套时间分辨ESR装置，时间分辨率达到准微秒级。 (2)．利用时间分辨ESR装置，对C60及其环加成衍生物分子间和分子内光诱导电子转移反应的自由基复合过程动力学进行了研究，从分子结构角度分析了影响电荷分离态稳定性的因素。 (3)．初步探讨了TPP／DODAC与HA／DODAC两种单层囊泡间的光诱导电子转移反应，获得了长寿命的电荷分离态，为光合作用模拟提供有价值的模型。 (4)．通过对比研究mes-卟啉Ⅱ／苯醌／CH。OH的化学诱导动态核自旋态极化( CIDNP)和ESR波谱，提出一个激发态苯醌与质子给体间的光诱导氢转移自由基反应新机理。

The use of C-V techniques to investigate instability mechanisms in M-I-S structures

In the field of flat panel displays, the current leading technology is the Active Matrix liquid Crystal Display; this uses a-Si:H based thin film transistors (TFTs) as the switching element in each pixel. However, under gate bias a-Si:H TFTs suffer from instability, as is evidenced by a shift in the gate threshold voltage. The shift in the gate threshold voltage is generally measured from the gate transfer characteristics, after subjecting the TFT to prolonged gate bias. However, a major drawback of this measurement method is that it cannot distinguish whether the shift is caused by the change in the midgap states in the a-Si:H channel or by charge trapping in the gate insulator. In view of this, we have developed a capacitance-voltage (C-V) method to measure the shift in threshold voltage. We employ Metal-Insulator-Semiconductor (MIS) structures to investigate the threshold voltage shift as they are simpler to fabricate than TFTs. We have investigated a large of number Metal/a-Si:H/Si3N4/Si+n structures using our C-V technique. From, the C-V data for the MIS structures, we have found that the relationship between the thermal energy and threshold voltage shift is similar to that reported by Wehrspohn et. al in a-Si:H TFTs (J Appl. Phys, 144, 87, 2000). The a-Si:H and Si3N4 layers were grown using the radio-frequency plasma-enhanced chemical vapour deposition technique.

A novel design of Thermally Actuated Magnetization Flux pump for high temperature superconducting bulks

High temperature superconductors, such as melt-processed YBCO bulks, have great advantages on trapping strong magnetic fields in liquid nitrogen. To enable them to function well, there are some traditional ways of magnetizing them, in which the YBCO bulks are magnetized instantly under a very strong source of magnetic field. These ways would consume great amounts of power to make the superconductors trap as much field as possible. Thermally Actuated Magnetization (TAM) Flux pump has been proved a perfect substitution for these expensive methods by using a relatively small magnet as the source. In this way, the field is developed gradually over many pulses. Unlike conventional flux pumping ways, the TAM does not drive the superconductor normal during the process of magnetization. In former experiments for the flux pump, some fundamental tests were done. In this paper, the experiment system is advanced to a new level with better temperature control to the thermal waves moving in the Gadolinium and with less air gap for the flux lines sweeping through the superconductor. This experiment system F leads to a stronger accumulation of the magnetic field trapped in the YBCO bulk. We also tried different ways of sending the thermal waves and found out that the pumping effect is closely related to the power of the heaters and the on and off time. © 2010 IEEE.

Kigezi local otter trap

The otter belongs to the family Muslelidae of the super family Canoidea. It is a mammal related to the stoat, skunk, marten and wolverine. Its habitat is the water, and it is carnivorous in diet, feeding on fish and other water animals. In Uganda, the otter is widely distributed throughout the western region, and most other parts of the country. To protect fish farmers from the otter, the Fisheries Department recommends fencing the ponds to keep out the otters or trapping to kill them.

Optical tweezing beam control using liquid crystal adaptive optical elements

Liquid crystal (LC) adaptive optical elements are described, which provide an alternative to existing micropositioning technologies in optical tweezing. A full description of this work is given in [1]. An adaptive LC prism supplies tip/tilt to the phase profile of the trapping beam, giving rise to an available steering radius within the x-y plane of 10 μm. Additionally, a modally addressed adaptive LC lens provides defocus, offering a z-focal range for the trapping site of 100 μm. The result is full three-dimensional positional control of trapped particle(s) using a simple and wholly electronic control system. Compared to competing technologies, these devices provide a lower degree of controllability, but have the advantage of simplicity, cost and light efficiency. Furthermore, due to their birefringence, LC elements offer the opportunity of the creation of dual optical traps with controllable depth and separation.

Metastability mechanisms in thin film transistors quantitatively resolved using post-stress relaxation of threshold voltage

A new approach is presented to resolve bias-induced metastability mechanisms in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs). The post stress relaxation of threshold voltage (V(T)) was employed to quantitatively distinguish between the charge trapping process in gate dielectric and defect state creation in active layer of transistor. The kinetics of the charge de-trapping from the SiN traps is analytically modeled and a Gaussian distribution of gap states is extracted for the SiN. Indeed, the relaxation in V(T) is in good agreement with the theory underlying the kinetics of charge de-trapping from gate dielectric. For the TFTs used in this work, the charge trapping in the SiN gate dielectric is shown to be the dominant metastability mechanism even at bias stress levels as low as 10 V.

Electron spin resonance signature of the oxygen vacancy in HfO 2

The oxygen vacancy has been inferred to be the critical defect in HfO 2, responsible for charge trapping, gate threshold voltage instability, and Fermi level pinning for high work function gates, but it has never been conclusively identified. Here, the electron spin resonance g tensor parameters of the oxygen vacancy are calculated, using methods that do not over-estimate the delocalization of the defect wave function, to be g xx = 1.918, g yy = 1.926, g zz = 1.944, and are consistent with an observed spectrum. The defect undergoes a symmetry lowering polaron distortion to be localized mainly on a single adjacent Hf ion. © 2012 American Institute of Physics.

Design consideration of a circular type magnetic flux pump device

As a variation of the thermally actuated flux pump and the linear type magnetic flux pump (LTMFP), the circular type magnetic flux pump (CTMFP) device is proposed to magnetize a circular shape type-II superconducting thin film and bulk. The basic concept is the same as the thermally actuated flux pump: a circularly symmetric traveling magnetic field is generated below a circular shape superconductor to increase its trapping field. However, this traveling field is created by the three phase windings instead of heating gadolinium block. Apart from the LTMFP, the three phase windings are wound concentrically instead of linearly. The speed of the traveling field is controlled by the AC frequency and the magnitude of the field is controlled by the magnitudes of AC currents. In addition, a coil with DC current is wound around the three phase windings to provide a background field. The concept design is presented in this paper. The magnetic waveforms are analysed numerically by the COMSOL 3.5a software. The impedances of the three phase windings are calculated and a corresponding circuit design is presented. This rig can be used as an advanced tool to study the flux pump behavior of a circular shape superconductor. © 2002-2011 IEEE.

Magnetic properties of drilled bulk high-temperature superconductors filled with a ferromagnetic powder

It is shown that filling the holes of a drilled bulk high-temperature superconductor (HTS) with a soft ferromagnetic powder enhances its trapping properties. The magnetic properties of the trapped field magnet are characterized by Hall probe mapping and magnetization measurements. This analysis is completed by a numerical model based on a 3D finite-element method where the conductivity of the superconducting material is described by a power law while the permeability of the ferromagnetic material is fixed to a given value and is considered uniform. Numerical results support the experimental observations. In particular, they confirm the increase of trapped flux that is observed with Hall probe mapping after impregnation. © 2011 IOP Publishing Ltd.

Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation. © 2013 AIP Publishing LLC.

Vertical CNT-Si photodiode array.

A photodiode consisting of nanopillars of thin-film silicon p-i-n on an array of vertically aligned carbon nanotubes (CNTs) with a noncontinuous cathode electrode is demonstrated. The structure exploits the intrinsic enhancement of the CNTs' electric field, which leads to reduction in the photodiode's operating voltage and response time and enhancement of optical coupling due to better light trapping, as compared with the conventional planar photodiode. These improvements translate to higher resolution and higher frame rate flat-panel imaging systems for a broad range of applications, including computed tomography and particle detection.

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65-0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10 6-107 s-1, which suggests a weak localization of carriers in band tail states over a 20-40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage shift, but only under conditions of simultaneous negative gate bias and illumination, as observed experimentally as the NBIS effect. © 2014 AIP Publishing LLC.

Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors

Segregating the dynamics of gate bias induced threshold voltage shift, and in particular, charge trapping in thin film transistors (TFTs) based on time constants provides insight into the different mechanisms underlying TFTs instability. In this Letter we develop a representation of the time constants and model the magnitude of charge trapped in the form of an equivalent density of created trap states. This representation is extracted from the Fourier spectrum of the dynamics of charge trapping. Using amorphous In-Ga-Zn-O TFTs as an example, the charge trapping was modeled within an energy range of ΔEt 0.3 eV and with a density of state distribution as Dt(Et-j)=Dt0exp(-ΔEt/ kT)with Dt0 = 5.02 × 1011 cm-2 eV-1. Such a model is useful for developing simulation tools for circuit design. © 2014 AIP Publishing LLC.

Cloning and expression analysis in mature individuals of two chicken type-II GnRH (cGnRH-II) genes in common carp (Cyprinus carpio)

Gonadotropin-releasing hormone (GnRH) is a conservative neurodecapeptide family, which plays a crucial role in regulating the gonad development and in controlling the final sexual maturation in vertebrate. Two differing cGnRH-II cDNAs of common carp, namely cGnRH-II cDNA1 and cDNA2, were firstly cloned from the brain by rapid amplification of cDNA end (RACE) and reverse transcription- polymerase chain reaction (RT-PCR). The length of cGnRH-II cDNA1 and cDNA2 was 622 and 578 base pairs (bp), respectively. The cGnRH-II precursors encoded by two cDNAs consisted of 86 amino acids, including a signal peptide, cGnRH-II decapeptide and a GnRH-associated peptide (GAP) linked by a Gly-Lys-Arg proteolytic site. The results of intron trapping and Southern blot showed that two differing cGnRH-II genes in common carp genome were further identified, and that two genes might exist as a single copy. The multi-gene coding of common carp cGnRH-II gene offered novel evidence for gene duplication hypothesis. Using semi-quantitative RT-PCR, expression and relative expression levels of cGnRH-II genes were detected in five dissected brain regions, pituitary and gonad of common carp. With the exception of no mRNA2 in ovary, two cGnRH-II genes could be expressed in all the detected tissues. However, expression levels showed an apparent difference in different brain regions, pituitary and gonad. According to the expression characterization of cGnRH-II genes in brain areas, it was presumed that cGnRH-II might mainly work as the neurotransmitter and neuromodulator and also operate in the regulation for the GnRH releasing. Then, the expression of cGnRH-II genes in pituitary and gonad suggested that cGnRH-II might act as the autocrine or paracrine regulator.

Effects of coupling lens on optical refrigeration of semiconductors

Optical refrigeration of semiconductors is encountering efficiency difficulties caused by nonradiative recombination and luminescence trapping. A commonly used approach for enhancing luminescence efficiency of a semiconductor device is coupling a lens with the device. We quantitatively study the effects of a coupling lens on optical refrigeration based on rate equations and photon recycling, and calculated cooling efficiencies of different coupling mechanisms and of different lens materials. A GaAs/GaInP heterostructure coupled with a homo-epitaxial GaInP hemispherical lens is recommended.