987 resultados para Tomografía computada volumétrica Cone-Beam
Resumo:
In the present study singular fractal functions (SFF) were used to generate stress-strain plots for quasibrittle material like concrete and cement mortar and subsequently stress-strain plot of cement mortar obtained using SFF was used for modeling fracture process in concrete. The fracture surface of concrete is rough and irregular. The fracture surface of concrete is affected by the concrete's microstructure that is influenced by water cement ratio, grade of cement and type of aggregate 11-41. Also the macrostructural properties such as the size and shape of the specimen, the initial notch length and the rate of loading contribute to the shape of the fracture surface of concrete. It is known that concrete is a heterogeneous and quasi-brittle material containing micro-defects and its mechanical properties strongly relate to the presence of micro-pores and micro-cracks in concrete 11-41. The damage in concrete is believed to be mainly due to initiation and development of micro-defects with irregularity and fractal characteristics. However, repeated observations at various magnifications also reveal a variety of additional structures that fall between the `micro' and the `macro' and have not yet been described satisfactorily in a systematic manner [1-11,15-17]. The concept of singular fractal functions by Mosolov was used to generate stress-strain plot of cement concrete, cement mortar and subsequently the stress-strain plot of cement mortar was used in two-dimensional lattice model [28]. A two-dimensional lattice model was used to study concrete fracture by considering softening of matrix (cement mortar). The results obtained from simulations with lattice model show softening behavior of concrete and fairly agrees with the experimental results. The number of fractured elements are compared with the acoustic emission (AE) hits. The trend in the cumulative fractured beam elements in the lattice fracture simulation reasonably reflected the trend in the recorded AE measurements. In other words, the pattern in which AE hits were distributed around the notch has the same trend as that of the fractured elements around the notch which is in support of lattice model. (C) 2011 Elsevier Ltd. All rights reserved.
Resumo:
Phase pure wurtzite GaN films were grown on Si (100) substrates by introducing a silicon nitride layer followed by low temperature GaN growth as buffer layers. GaN films grown directly on Si (100) were found to be phase mixtured, containing both cubic (beta) and hexagonal (alpha) modifications. The x-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN films grown with silicon nitride buffer layer grown at 800 degrees C when compared to the samples grown in the absence of silicon nitride buffer layer and with silicon nitride buffer layer grown at 600 degrees C. Core-level photoelectron spectroscopy of Si(x)N(y) layers reveals the sources for superior qualities of GaN epilayers grown with the high temperature substrate nitridation process. The discussion has been carried out on the typical inverted rectification behavior exhibited by n-GaN/p-Si heterojunctions. Considerable modulation in the transport mechanism was observed with the nitridation conditions. The heterojunction fabricated with the sample of substrate nitridation at high temperature exhibited superior rectifying nature with reduced trap concentrations. Lowest ideality factors (similar to 1.5) were observed in the heterojunctions grown with high temperature substrate nitridation which is attributed to the recombination tunneling at the space charge region transport mechanism at lower voltages and at higher voltages space charge limited current conduction is the dominating transport mechanism. Whereas, thermally generated carrier tunneling and recombination tunneling are the dominating transport mechanisms in the heterojunctions grown without substrate nitridation and low temperature substrate nitridation, respectively. (C) 2011 American Institute of Physics. [doi:10.1063/1.3658867]
Resumo:
This paper presents the image reconstruction using the fan-beam filtered backprojection (FBP) algorithm with no backprojection weight from windowed linear prediction (WLP) completed truncated projection data. The image reconstruction from truncated projections aims to reconstruct the object accurately from the available limited projection data. Due to the incomplete projection data, the reconstructed image contains truncation artifacts which extends into the region of interest (ROI) making the reconstructed image unsuitable for further use. Data completion techniques have been shown to be effective in such situations. We use windowed linear prediction technique for projection completion and then use the fan-beam FBP algorithm with no backprojection weight for the 2-D image reconstruction. We evaluate the quality of the reconstructed image using fan-beam FBP algorithm with no backprojection weight after WLP completion.
Resumo:
InN quantum dots (QDs) were grown on Si (111) by epitaxial Stranski-Krastanow growth mode using plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN QDs was verified by the x-ray diffraction and transmission electron microscopy. Scanning tunneling microscopy has been used to probe the structural aspects of QDs. A surface bandgap of InN QDs was estimated from scanning tunneling spectroscopy (STS) I-V curves and found that it is strongly dependent on the size of QDs. The observed size-dependent STS bandgap energy shifts with diameter and height were theoretical explained based on an effective mass approximation with finite-depth square-well potential model.
Resumo:
For the first time silicon nanowires have been grown on indium (In) coated Si (100) substrates using e-beam evaporation at a low substrate temperature of 300 degrees C. Standard spectroscopic and microscopic techniques have been employed for the structural, morphological and compositional properties of as grown Si nanowires. The as grown Si nanowires have randomly oriented with an average length of 600 nm for a deposition time of 15 min. As grown Si nanowires have shown indium nanoparticle (capped) on top of it confirming the Vapor Liquid Solid (VLS) growth mechanism. Transmission Electron Microscope (TEM) measurements have revealed pure and single crystalline nature of Si nanowires. The obtained results have indicated good progress towards finding alternative catalyst to gold for the synthesis of Si nanowires. (C) 2011 Elsevier B.V. All rights reserved.
Resumo:
The nanochemistry of calcium remains unexplored, which is largely due to the inaccessibility of calcium nanoparticles in an easy to handle form by conventional methods of synthesis as well as its highly reactive and pyrophoric nature. The synthesis of colloidal Ca nanoparticles by the solvated metal atom dispersion (SMAD) method is described. The as-prepared Ca-THF nanoparticles, which are polydisperse, undergo digestive ripening in the presence of a capping agent, hexadecyl amine (HDA) to afford highly monodisperse colloids consisting of 2-3 nm sized Ca-HDA nanoparticles. These are quite stable towards precipitation for long periods of time, thereby providing access to the study of the nanochemistry of Ca. Particles synthesized in this manner were characterized by UV-visible spectroscopy, high resolution electron microscopy, and powder X-ray diffraction methods. Under an electron beam, two adjacent Ca nanoparticles undergo coalescence to form a larger particle.