959 resultados para Silicon-carbide


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Tungsten carbide, WC, has shown dissimilar thermal behavior when it is heated on changeable heating rate and flow of oxidant atmosphere. The oxidation of WC to WO3 tends to be in a single and slow kinetic step on slow heating rate and/or low flux of air. Kinetic parameters, on non-isothermal condition, could be evaluated to the oxidation of WC to heating rate below 15 degrees C min(-1) or low flow of air (10 mL min(-1)). The reaction is governed by nucleation and growth at 5 to 10 degrees C min(-1) then the tendency is to be autocatalytic, JMA and SB, respectively.

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For the first time, ab inito all electron fully relativistic and correlated Dirac-Fock calculations with prolapse free basis set are reported for a Super Heavy Element. We investigated the relativistic effects on bonding and on some spectroscopic constants for the darmstadtium carbide and our results at DF/CCSD(T) with a prolapse free basis set suggest for R-e, omega(e) and D-e the values of 174 pm, 1114 cm(-1) and 7.29 eV, respectively. These values are very similar to the values for PtC found on literature. It was also found that prolapse free basis set may be important to estimate the dissociation energy using Relativistic 4-components correlated methods. (c) 2007 ELsevier B.V. All rights reserved.

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The evolution of the energy states of the phosphorous donor in silicon with magnetic field has been the subject of previous experimental and theoretical studies to fields of 10 T. We now present experimental optical absorption data to 18 T in combination with theoretical data to the same field. We observe features that are not revealed in the earlier work, including additional interactions and anti-crossings between the different final states. For example, according to the theory, for the "1s -> 2p (+)" transition, there are anti-crossings at about 5, 10, 14, 16, and 18 T. In the experiments, we resolve at least the 5, 10, and 14 T anti-crossings, and our data at 16 and 18 T are consistent with the calculations.

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The effect of magnetic field enhanced plasma immersion ion implantation (PIII) in silicon substrate has been investigated at low and high pulsed bias voltages. The magnetic field in magnetic bottle configuration was generated by two magnetic coils installed outside the vacuum chamber. The presence of both, electric and magnetic field in PIII creates a system of crossed E x B fields, promoting plasma rotation around the target. The magnetized electrons drifting in crossed E x B fields provide electron-neutral collision. Consequently, the efficient background gas ionization augments the plasma density around the target where a magnetic confinement is achieved. As a result, the ion current density increases, promoting changes in the samples surface properties, especially in the surface roughness and wettability and also an increase of implantation dose and depth. (C) 2012 Elsevier B. V. All rights reserved.

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In this work, we studied the photocatalytic and the structural aspects of silicon wafers doped with Au and Cu submitted to thermal treatment. The materials were obtained by deposition of metals on Si using the sputtering method followed by fast heating method. The photocatalyst materials were characterized by synchrotron-grazing incidence X-ray fluorescence, ultraviolet-visible spectroscopy, X-ray diffraction, and assays of H(2)O(2) degradation. The doping process decreases the optical band gap of materials and the doping with Au causes structural changes. The best photocatalytic activity was found for thermally treated material doped with Au. Theoretical calculations at density functional theory level are in agreement with the experimental data.

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We have compared the recently introduced generalized simulated annealing (GSA) with conventional simulated annealing (CSA). GSA was tested as a tool to obtain the ground-state geometry of molecules. We have used selected silicon clusters (Sin, n=4-7,10) as test cases. Total energies were calculated through tight-binding molecular dynamics. We have found that the replacement of Boltzmann statistics (CSA) by Tsallis's statistics (GSA) has the potential to speed up optimizations with no loss of accuracy. Next, we applied the GSA method to study the ground-state geometry of a 20-atom silicon cluster. We found an original geometry, apparently lower in energy than those previously described in the literature.

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Silicon crystal exhibits a ductile regime during machining prior to the onset of fracture when appropriate cutting conditions are applied. The present study shows that the ductile regime is a result of a phase transformation which is indirectly evidenced by the amorphous phase detected in the machined surface. Transmission electron microscopy (TEM) planar view studies were successfully performed on monocrystalline silicon (1 0 0) single point diamond turned. TEM electron diffraction patterns show that the machined surface presents diffuse rings along with traces of crystalline material. This is attributed to crystalline silicon immersed in an amorphous matrix. Furthermore, only diffuse rings in the diffraction patterns of the ductile chip are detected, indicating that it is totally amorphous. © 2000 Elsevier Science B.V. All rights reserved.

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In cases of decorative and functional applications, chromium results in protection against wear and corrosion combined with chemical resistance and good lubricity. However, pressure to identify alternatives or to improve conventional chromium electroplating mechanical characteristics has increased in recent years, related to the reduction in the fatigue strength of the base material and to environmental requirements. The high efficiency and fluoride-free hard chromium electroplating is an improvement to the conventional process, considering chemical and physical final properties. One of the most interesting, environmentally safer and cleaner alternatives for the replacement of hard chrome plating is tungsten carbide thermal spray coating, applied by the high velocity oxy-fuel (HVOF) process. The aim of this study was to analyse the effects of the tungsten carbide thermal spray coating applied by the HP/HVOF process and of the high efficiency and fluoride-free hard chromium electroplating (in the present paper called 'accelerated'), in comparison to the conventional hard chromium electroplating on the AISI 4340 high strength steel behaviour in fatigue, corrosion, and abrasive wear tests. The results showed that the coatings were damaging to the AISI 4340 steel behaviour when submitted to fatigue testing, with the tungsten carbide thermal spray coatings showing the better performance. Experimental data from abrasive wear tests were conclusive, indicating better results from the WC coating. Regarding corrosion by salt spray test, both coatings were completely corroded after 72 h exposure. Scanning electron microscopy technique (SEM) and optical microscopy were used to observe crack origin sites, thickness and adhesion in all the coatings and microcrack density in hard chromium electroplatings, to aid in the results analysis. © 2001 Elsevier Science B.V. All rights reserved.

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In the present work, nano-sized magnetic nuclei of Co have been electrodeposited onto p-Si (111). The deposition follows a mechanism of progressive nucleation and growth controlled by diffusion. MFM studies showed that the transition between magnetic domain states is strongly dependent on the size and shape of the nuclei. A critical height h0 is defined below which the nuclei presented always a single-domain configuration. The limiting lower boundary for the single-domain state calculated from the theory is quantitatively coincident with the experimental results. © 2004 Elsevier B.V. All rights reserved.

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Automotive parts manufacture by machining process using silicon nitride-based ceramic tool development in Brazil already is a reality. Si 3N4-based ceramic cutting tools offer a high productivity due to their excellent hot hardness, which allows high cutting speeds. Under such conditions the cutting tool must be resistant to a combination of mechanical, thermal and chemical attacks. Silicon nitride based ceramic materials constitute a mature technology with a very broad base of current and potential applications. The best opportunities for Si3N 4-based ceramics include ballistic armor, composite automotive brakes, diesel particulate filters, joint replacement products and others. The goal of this work was to show latter advance in silicon nitride manufacture and its recent evolution on machining process of gray cast iron, compacted graphite iron and Ti-6Al-4V. Materials characterization and machining tests were analyzed by X-Ray Diffraction, Scanning Electron Microscopy, Vickers hardness and toughness fracture and technical norm. In recent works the authors has been proved to advance in microstructural, mechanical and physic properties control. These facts prove that silicon nitride-based ceramic has enough resistance to withstand the impacts inherent to the machining of gray cast iron (CI), compacted graphite iron (CGI) and Ti-6Al-4V (6-4). Copyright © 2008 SAE International.

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The CMS silicon tracker, consisting of 1440 silicon pixel and 15 148 silicon strip detector modules, has been aligned using more than three million cosmic ray charged particles, with additional information from optical surveys. The positions of the modules were determined with respect to cosmic ray trajectories to an average precision of 3-4 microns RMS in the barrel and 3-14 microns RMS in the endcap in the most sensitive coordinate. The results have been validated by several studies, including laser beam cross-checks, track fit self-consistency, track residuals in overlapping module regions, and track parameter resolution, and are compared with predictions obtained from simulation. Correlated systematic effects have been investigated. The track parameter resolutions obtained with this alignment are close to the design performance. © 2010 IOP Publishing Ltd and SISSA.

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Introduction: An appropriate selection of instruments is essential to perform a correct debonding technique, by properly removing orthodontic brackets and the remaining resin. Objective: The aim of this study was to evaluate three methods of remaining resin removal on enamel surface after bracket debonding, by means of Scanning Electron Microscopy (SEM). Methods: Eighteen bovine incisors were selected and divided into three groups (A, B and C) of six teeth each. Before bracket bonding, epoxy resin casts were obtained by impression of the teeth with addition silicon, in order to register baseline enamel characteristics and representing the control group. The methods for remaining resin removal were: Group A - gross and medium granulation Soflex discs; Group B - carbide bur in low-speed; Group C - carbide bur in high-speed. Soflex polishing system fine and ultrafine granulation discs were used for Group A, rubber tips for Groups B and C, and polishing paste for all groups. After polishing, impression of teeth were taken and casts were analyzed by means of SEM. The baseline enamel characteristics (Control Group) were compared to the final aspect of enamel to determine the method that generated less enamel abrasion. Results and Conclusion: The remaining resin removal by carbide bur in low-rotation, and enamel polished with rubber tips followed by polishing paste produced the smaller damage to the enamel.

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Silicon can alleviate biotic and abiotic stresses in several crops, and it has beneficial effects on plants under nonstressed conditions. However, there is still doubt about foliar-applied Si efficiency and Si effects on mineral nutrition, physiological processes, and growth of potato (Solanum tuberosum L.) plants under wellwatered conditions. The objective of this study was to evaluate the effect of soil and foliar application of soluble Si on Si accumulation, nutrients, and pigments concentration as well as gas exchange and growth of potato plants. The experiment was conducted under greenhouse conditions in pots containing 35 dm3 of a Typic Acrortox soil. The treatments consisted of a control (no Si application), soil application of soluble Si (50 mg dm-3 Si), and foliar application of soluble Si (three sprays of 1.425 mM Si water solution, prepared with a soluble concentrate stabilized silicic acid), with eight replications. Both soil and foliar application of Si resulted in higher Si accumulation in the whole plant. Foliar application of Si resulted in the greatest Si concentration in leaves, and soil application increased Si concentration in leaves, stems, and roots. Silicon application, regardless of the application method, increased leaf area, specific leaf area, and pigment concentration (chlorophyll a and carotenoids) as well as photosynthesis and transpiration rates of wellwatered potato plants. However, only soil application increased P concentration in leaves and dry weight of leaves and stems. © Crop Science Society of America.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)