Ultralow voltage resonant tunnelling diode electroabsorption modulator

Embedding a double barrier resonant tunnelling diode (RTD) in a unipolar InGaAlAs optical waveguide gives rise to a very low driving voltage electroabsorption modulator (EAM) at optical wavelengths around 1550 nm. The presence of the RTD within the waveguide core introduces high non- linearity and negative di erential resistance in the current±voltage (I±V) characteristic of the waveguide. This makes the electric ®eld distribution across the waveguide core strongly dependent on the bias voltage: when the current decreases from the peak to the valley, there is an increase of the electric ®eld across the depleted core. The electric ®eld enhancement in the core-depleted layer causes the Franz±Keldysh absorption band-edge to red shift, which is responsible for the electroabsorption e ect. High-frequency ac signals as low as 100mV can induce electric ®eld high-speed switching, producing substantial light modulation (up to 15 dB) at photon energies slightly lower than the waveguide core band-gap energy. The key di erence between this device and conventional p-i-n EAMs is that the tunnelling characteristics of the RTD are employed to switch the electric ®eld across the core-depleted region; the RTD- EAM has in essence an integrated electronic ampli®er and, therefore, requires considerably less switching power.

Electric field switching in a resonant tunneling diode electroabsorption modulator

The basic mechanism underlying electric field switching produced by a resonant tunneling diode (RTD) is analyzed and the theory compared with experimental results; agreement to within 12% is achieved. The electroabsorption modulator (EAM) device potential of this effect is explored in an optical waveguide configuration. It is shown that a RTD-EAM can provide significant absorption coefficient change, via the Franz– Keldysh effect, at appropriate optical communication wavelengths around 1550 nm and can achieve up to 28-dB optical modulation in a 200- m active length device. The advantage of the RTD-EAM over the conventional reverse-biased p–n junction EAM, is that the RTD-EAM has, in essence, an integrated electronic amplifier and, therefore, requires considerably less switching power.

Resonant frequencies of circular-sided dual-port microstrip antenna

A dual-port microstrip antenna with a crescent shaped patch with excellent isolation betwecn the ports has been reportcd [I]. Since circular-sided geometries are inore compact than rectangular oncs, thcy find morc applications in microstrip arrays. The crcscent shaped antenna geometry [ I ] provides greater area rcductioii compared to other circular sided patches for broadband operation [2]. In this Lctter, formulac for calculating thc TM, I and TMZI mode resonant frequencies of this microstrip antenna, obtained by modifying the equations of a standard circular patch [3] are presentcd. Thcorctical results are compared with experimental observations aid the validity of the computation is established.

Tunnel-Based Artificial Neural Network Technique to Calculate the Resonant Frequency of a Thick-Substrate Microstrip Antenna

The mathematical formulation of empirically developed formulas Jirr the calculation of the resonant frequency of a thick-substrate (h s 0.08151 A,,) microstrip antenna has been analyzed. With the use qt' tunnel-based artificial neural networks (ANNs), the resonant frequency of antennas with h satisfying the thick-substrate condition are calculated and compared with the existing experimental results and also with the simulation results obtained with the use of an IE3D software package. The artificial neural network results are in very good agreement with the experimental results

Photoemission optogalvanic effect studies in N2, NO2 and Ar discharges under pulsed laser excitation

A two-photon induced photoemission optogalvanic effect which brings about a change in the discharge voltage when a pulsed dye laser beam is focused on a tungsten electrode has been described. The experiment is performed with N2, NO2 and Ar discharges. The magnitude of the signal voltage is studied as a function of laser energy and discharge current. The effective quantum efficiency in the discharge is found to be larger than that in the vacuum condition.

Photoemission optogalvanic effect studies in N2, NO2 and Ar discharges under pulsed laser excitation

A two-photon induced photoemission optogalvanic effect which brings about a change in the discharge voltage when a pulsed dye laser beam is focused on a tungsten electrode has been described. The experiment is performed with N2, NO2 and Ar discharges. The magnitude of the signal voltage is studied as a function of laser energy and discharge current. The effective quantum efficiency in the discharge is found to be larger than that in the vacuum condition.

Photoemission optogalvanic effect near the instability region of a hollow cathode discharge

The photoemission optogalvanic (POG) effect has been investigated in a neon-neodymium hollow cathode discharge using cw laser excitation. Both positive and negative effects were observed. It was found that the amplitude of the POG signal was unstable near the instability region of the discharge.

Photoemission optogalvanic studies with copper as target electrode

Photoemission optogalvanaic (POG) effect has been observed by irradiating copper target electrode, in a nitrogen discharge cell using 1.06 μm and frequency doubled 532 nm Nd:YAG laser pulse. Measurement of the nature of the variation of POG signal strength with 532 nm laser fluence confirms the two photon induced photoelectric emission from copper. However, using 1.06 μm laser pulses thermally assisted photoemission is observed.

Observation of two-photon induced photoemission optogalvanic effect

Observation of laser induced two-photon photoemission optogalvanic (TPPOG) effect from tungsten electrode in a discharge cell using 564 nm radiation obtained from a pulsed dye laser is described. The magnitude of the POG signal is studied as a function of laser energy under various discharge parameters. Competition between one-photon and two-photon processes has been observed when nitrogen gas is used in the discharge cell.

The photoemission optogalvanic effect in a Ne-Nd hollow cathode

Laser-induced photoelectric and photoemission optogalvanic effects in a Ne-Nd hollow cathode discharge have been studied using a continuous wave laser source. The potential barrier for photoinduced electron emission from the cathode decreases as the applied voltage is increased. Owing to secondary electron emission in the plasma, the photocurrent is greater than that without discharge. The multiplication of secondary electrons and the quantum efficiency are also investigated.

Photothermal Characterization of Nanogold Under Conditions of Resonant Excitation and Energy Transfer

We have performed thermal diffusion measurements of nanofluid containing gold and rhodamine 6G dye in various ratios. At certain concentrations, gold is nearly four times more efficient than water in dissipating small temperature fluctuations in a medium, and therefore it will find applications as heat transfer fluids. We have employed dual-beam mode-matched thermal lens technique for the present investigation. It is a sensitive technique in measuring photothermal parameters because of the use of a lowpower, stabilized laser source as the probe. We also present the results of fluorescence measurements of the dye in the nanogold environment.

Laser Induced Thermal Lens Effect in Rhodamine B — Signature of Resonant Two Photon Absorption

Measurement of thermal lensing signal as a function of laser power made in Rhodamine B solutions in methanol give clear evidence of two photon absorption process within certain concentration ranges when 488 nm Ar+ laser beam is used as the pump source. Only one photon process is found to occur when 514 nm and 476 nm beams are used as the pump.

Studies on Non-Resonant Multiphoton Processes in Atomic Hydrogen

In the present thesis we have formulated the Dalgarno-Lewis procedure for two-and three-photon processes and an elegant alternate expressions are derived. Starting from a brief review on various multiphoton processes we have discussed the difficulties coming in the perturbative treatment of multiphoton processes. A small discussion on various available methods for studying multiphoton processes are presented in chapter 2. These theoretical treatments mainly concentrate on the evaluation of the higher order matrix elements coming in the perturbation theory. In chapter 3 we have described the use of Dalgarno-Lewis procedure and its implimentation on second order matrix elements. The analytical expressions for twophoton transition amplitude, two-photon ionization cross section, dipole dynamic polarizability and Kramers-Heiseberg are obtained in a unified manner. Fourth chapter is an extension of the implicit summation technique presented in chapter 3. We have clearly mentioned the advantage of our method, especially the analytical continuation of the relevant expressions suited for various values of radiation frequency which is also used for efficient numerical analysis. A possible extension of the work is to study various multiphoton processcs from the stark shifted first excited states of hydrogen atom. We can also extend this procedure for studying multiphoton processes in alkali atoms as well as Rydberg atoms. Also, instead of going for analytical expressions, one can try a complete numerical evaluation of the higher order matrix elements using this procedure.