957 resultados para Pin Diode
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Visible range to telecom band spectral translation is accomplished using an amorphous SiC pi'n/pin wavelength selector under appropriate front and back optical light bias. Results show that background intensity works as selectors in the infrared region, shifting the sensor sensitivity. Low intensities select the near-infrared range while high intensities select the visible part according to its wavelength. Here, the optical gain is very high in the infrared/red range, decreases in the green range, stays close to one in the blue region and strongly decreases in the near-UV range. The transfer characteristics effects due to changes in steady state light intensity and wavelength backgrounds are presented. The relationship between the optical inputs and the output signal is established. A capacitive optoelectronic model is presented and tested using the experimental results. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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This paper describes a modular solid-state switching cell derived from the Marx generator concept to be used in topologies for generating multilevel unipolar and bipolar high-voltage (HV) pulses into resistive loads. The switching modular cell comprises two ON/OFF semiconductors, a diode, and a capacitor. This cell can be stacked, being the capacitors charged in series and their voltages balanced in parallel. To balance each capacitor voltage without needing any parameter measurement, a vector decision diode algorithm is used in each cell to drive the two switches. Simulation and experimental results, for generating multilevel unipolar and bipolar HV pulses into resistive loads are presented.
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A good verification strategy should bring near the simulation and real functioning environments. In this paper we describe a system-level co-verification strategy that uses a common flow for functional simulation, timing simulation and functional debug. This last step requires using a BST infrastructure, now widely available on commercial devices, specially on FPGAs with medium/large pin-counts.
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This paper proposes a possible implementation of a compact printed monopole antenna, useful to operate in UMTS and WLAN bands. In order to accomplish that, a miniaturization technique based on the application of chip inductors is used in conjunction with frequency reconfiguration capability. The chip inductors change the impedance response of the monopole, allowing to reduce the resonant frequency. In order to be able to operate the antenna in these two different frequencies, an antenna reconfiguration technique based on PIN diodes is applied. This procedure allows the change of the active form of the antenna leading to a shift in the resonant frequency. The prototype measurements show good agreement with the simulation results.
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In this paper we present results about the functioning of a multilayered a-SiC:H heterostructure as a device for wavelength-division demultiplexing of optical signals. The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photogenerated carriers. Band gap engineering was used to adjust the photogeneration and recombination rates profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption and carrier collection in the visible spectrum. The photocurrent signal using different input optical channels was analyzed at reverse and forward bias and under steady state illumination. This photocurrent is used as an input for a demux algorithm based on the voltage controlled sensitivity of the device. The device functioning is explained with results obtained by numerical simulation of the device, which permit an insight to the internal electric configuration of the double heterojunction.These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photocapacitance due to the accumulation of space charge localized at the internal junction. The existence of a direct relation between the experimentally observed capacitive effects of the double diode and the quality of the semiconductor materials used to form the internal junction is highlighted.
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Characteristics of tunable wavelength pi'n/pin filters based on a-SiC:H multilayered stacked cells are studied both experimentally and theoretically. Results show that the device combines the demultiplexing operation with the simultaneous photodetection and self amplification of the signal. An algorithm to decode the multiplex signal is established. A capacitive active band-pass filter model is presented and supported by an electrical simulation of the state variable filter circuit. Experimental and simulated results show that the device acts as a state variable filter. It combines the properties of active high-pass and low-pass filter sections into a capacitive active band-pass filter using a changing capacitance to control the power delivered to the load.
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The behavior of tandem pin heterojunctions based on a-SiC: H alloys is investigated under different optical and electrical bias conditions. The devices are optimized to act as optically selective wavelength filters. Depending on the device configuration (optical gaps, thickness, sequence of cells in the stack structure) and on the applied voltage (positive or negative) and optical bias (wavelength, intensity, frequency) it is possible to combine the wavelength discrimination function with the self amplification of the signal. This wavelength nonlinearity allows the amplification or the rejection of a weak signal-impulse. The device works as an active tunable optical filter for wavelength selection and can be used as an add/drop multiplexer (ADM) which enables data to enter and leave an optical network bit stream without having to demultiplex the stream. Results show that, even under weak transient input signals, the background wavelength controls the output signal. This nonlinearity, due to the transient asymmetrical light penetration of the input channels across the device together with the modification on the electrical field profile due to the optical bias, allows tuning an input channel without demultiplexing the stream. This high optical nonlinearity makes the optimized devices attractive for the amplification of all optical signals. Transfer characteristics effects due to changes in steady state light, control d.c. voltage and applied light pulses are presented. Based on the experimental results and device configuration an optoelectronic model is developed. The transfer characteristics effects due to changes in steady state light, dc control voltage or applied light pulses are simulated and compared with the experimental data. A good agreement was achieved.
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Trabalho Final de Mestrado para obtenção do grau de Mestrado em Engenharia Electrónica e Telecomunicações
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In this paper we exploit the nonlinear property of the SiC multilayer devices to design an optical processor for error detection that enables reliable delivery of spectral data of four-wave mixing over unreliable communication channels. The SiC optical processor is realized by using double pin/pin a-SiC:H photodetector with front and back biased optical gating elements. Visible pulsed signals are transmitted together at different bit sequences. The combined optical signal is analyzed. Data show that the background acts as selector that picks one or more states by splitting portions of the input multi optical signals across the front and back photodiodes. Boolean operations such as EXOR and three bit addition are demonstrated optically, showing that when one or all of the inputs are present, the system will behave as an XOR gate representing the SUM. When two or three inputs are on, the system acts as AND gate indicating the present of the CARRY bit. Additional parity logic operations are performed using four incoming pulsed communication channels that are transmitted and checked for errors together. As a simple example of this approach, we describe an all-optical processor for error detection and then provide an experimental demonstration of this idea. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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The SiC optical processor for error detection and correction is realized by using double pin/pin a-SiC:H photodetector with front and back biased optical gating elements. Data shows that the background act as selector that pick one or more states by splitting portions of the input multi optical signals across the front and back photodiodes. Boolean operations such as exclusive OR (EXOR) and three bit addition are demonstrated optically with a combination of such switching devices, showing that when one or all of the inputs are present the output will be amplified, the system will behave as an XOR gate representing the SUM. When two or three inputs are on, the system acts as AND gate indicating the present of the CARRY bit. Additional parity logic operations are performed by use of the four incoming pulsed communication channels that are transmitted and checked for errors together. As a simple example of this approach, we describe an all optical processor for error detection and correction and then, provide an experimental demonstration of this fault tolerant reversible system, in emerging nanotechnology.
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Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para obtenção do grau de Mestre em Engenharia Mecânica
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Thesis presented at the Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, to obtain a Master degree in Conservation and Restoration,Specialization in Textiles
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Geociências, Museu Nac. Hist. Nat. Univ. Lisboa, nº 2, 35-84
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Tendo por referência a diretiva 2006/95/CE, o trabalho desenvolvido no contexto da disciplina de Dissertação/Projeto/Estágio do Mestrado de Engenharia de Instrumentação e Metrologia, decorreu nas instalações do IEP (Instituto Electrotécnico Português) e teve como objetivo principal o desenvolvimento de um procedimento de avaliação dos efeitos fotobiológicos no olho e pele provocados por fontes de emissão contínua (LED), doravante designado método alternativo ao de referência. Os dois métodos, alternativo e de referência, utilizam respectivamente um foto-radiómetro multicanal e um espetro-radiómetro. O procedimento desenvolvido (método alternativo) de acordo com a norma EN/IEC62471) consiste na aquisição dos valores de irradiância com recurso a um foto-radiómetro e posterior determinação dos valores da radiância, com os quais se faz a avaliação dos efeitos fotobiológicos, para fontes de luz LED (Light Emitting Diode) ou GLS (General Lighting Service). A consulta detalhada da norma EN/IEC62471 e a pesquisa sobre os conceitos, definições, equipamentos e metodologias relacionadas com o tema em causa, constituiu o primeiro passo deste projecto. Com recurso aos dois equipamentos, uma fonte de luz LED (módulo de 12 lâmpadas LED) é avaliada em relação aos perigos (ou riscos) actínico UV e UV-A, ao perigo da luz azul e ainda o perigo térmico na retina e térmico na pele, permitindo fazer uma análise comparativa dos resultados. O método alternativo revelou-se bastante flexível e eficaz, proporcionando bons resultados em termos da irradiância e radiância dos referidos efeitos fotobiológicos. A comparação destes resultados com os valores limites de exposição mencionados na norma EN/IEC6247 permitiu afirmar que a fonte de luz LED avaliada não representa perigo fotobiológico para a saúde humana e classifica-se no grupo de risco “isento”. Uma vez cumpridos os objectivos, entendeu-se que seria uma mais-valia para o trabalho já realizado, estudar outro caso prático. Sendo assim, fez-se a avaliação da radiação de apenas um dos LED´s que constituíam a fonte usada nos ensaios anteriores, com o espetro-radiómetro (método de referência) e com uma distância de 200 mm entre a fonte e o medidor. Neste caso verificaram-se diferenças significativas nas quantidades obtidas quando comparadas com os valores normativos. Concluiu-se que o efeito fotobiológico da luz azul insere-se no grupo de “isento”, sem perigo para a saúde. Contudo, o efeito térmico da retina apresenta um aumento considerável da quantidade de radiância, embora dentro do grupo de risco “isento”. Esta classificação de grupos de risco. Face aos resultados obtidos, pode confirmar-se que as lâmpadas LED apresentam segurança fotobiológica, atendendo aos baixos valores de irradiância e radiância dos efeitos fotobiológicos estudados. Pode ainda afirmar-se que a utilização do foto-radiómetro em alternativa ao espetro-radiómetro se revela mais eficaz do ponto de vista de metodologia prática. Este trabalho demonstra a robustez desses dois equipamentos de avaliação dos efeitos fotobiológicos, e procura estabelecer uma linha de orientação para a prevenção dos efeitos adversos na pele e olhos de todos os seres humanos sujeitos à radiação ótica artificial. Quanto às incertezas de medições, em relação ao processo de medição com foto-radiómetro, a sua estimação não se realizou, devido a não rastreabilidade entre as medições indicadas pelo fabricante, no certificado de calibração e as medidas realizadas por outras entidades. Contudo, é propõe-se a sua realização em trabalhos futuros dentro desse âmbito. As incertezas dos resultados de medições com espetro-radiómetro foram parcialmente estimadas. Atendendo às potencialidades do sistema de medição, propõe-se como trabalho futuro, a aplicação da norma IEC62478, que faz parte da aplicação da norma EN/IEC62471 na avaliação do efeito da luz azul, com base na determinação da temperatura de cor correlacionada (CCT) de lâmpadas ou sistemas de lâmpadas incluindo luminárias. Os valores de irradiância e radiância adquiridos nos processos de avaliação, tanto com foto-radiómetro como espectro-radiómetro foram gravados em ficheiro Excel para um CD e anexados a este trabalho.
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Presented thesis at Faculdade de Ciências e Tecnologias, Universidade de Lisboa, to obtain the Master Degree in Conservation and Restoration of Textiles