Tunable mechanical resonator with aluminum nitride piezoelectric

The electromechanical response of piezoelectrically-actuated AlN micromachined bridge resonators has been characterized using laser interferometry and electrical admittance measurements. We compare the response of microbridges with different dimensions and buckling (induced by the initial residual stress of the layers). The resonance frequencies are in good agreement with numerical simulations of the electromechanical behavior of the structures. We show that it is possible to perform a rough tuning of the resonance frequencies by allowing a determined amount of builtin stress in the microbridge during its fabrication. Once the resonator is made, a DC bias added to the AC excitation signal allows to fine-tune the frequency. Our microbridges yield a tuning factor of around 88 Hz/V for a 500 ?m-long microbridge.

Amorphous piezoresistive and piezoelectric sensors for robotics applications

Ultrasonic transducers have often been used in the development of sensory systems for robotics applications. In most cases, these sensory systems are based on the determination of times of flight for signals from every transducer. In this work we have used piezoresistive and piezoelectric materials to measure the instant and position collision in metallic structures by using the difference of the times of propagation of an acoustic wave when it is produced over a ferromagnetic (iron, steel or another material) based structure. An immediate application of the proposed method is the detection and location of impacts over the metallic links of an industrial robot or the collision position in a metallic structure for an automated inspection

Wedges and plate-bandes: mechanical theories after De la Hire

Plate-bandes are straight masonry arches (they are called, also, flat arches or lintel arches). Ideally they have the surfaces of extrados and intrados plane and horizontal. The stones or bricks have radial joints converging usually in one centre. The voussoirs have the form of wedges and in French they are called "claveaux". A plate-bande is, in fact, a lintel made of several stones and the proportions of lintels and plate-bandes are similar. Proportions of plate-bandes, that is the relationship between the thickness t and the span s (t/s)varies, typically between 1/4–1/3 in thick plate-bandes, and is less than 1/20 in the most slender ones. A ratio of circa 1/8 was usual in the 18th Century and follows a simple geometrical rule: the centre form with the intrados an equilateral triangle and the plate-bande should contain an arc of circle. The joints are usually plane, but in some cases present a «rebated» or «stepped» form. Plate-bandes exert an inclined thrust as any masonry arch. This thrust is usually very high and it requires either massive buttresses, or to be built in the middle of thick walls. Master builders and architects have tried since antiquity to calculate the abutment necessary for any arch. A modern architect or engineer will measure the arch thrust in units of force, kN or tons. Traditionally, the thrust has been measured as the size of the buttresses to resist it safely. Old structural rules, then, addressed the design problem establishing a relationship between the span and the depth of the buttress. These were empirical rules, particular for every type of arch or structure in every epoch. Thus, the typical gothic buttress is 1/4 of the vault span, but a Renaissance or baroque barrel vault will need more than 1/3 of the span. A plate-bande would require more than one half of the span; this is precisely the rule cited by the French engineer Gautier, who tried unsuccessfully to justify it by static reasons. They were used, typically, to form the lintels of windows or doors (1-2 m, typically); in Antiquity they were used, also, though rarely, at the gates of city walls or in niches (ca. 2 m, reaching 5.2 m). Plate-bandes may show particular problems: it is not unusual that some sliding of the voussoirs can be observed, particularly in thick plate-bandes. The stepped joints on Fig. 1, left, were used to avoid this problem. There are other «hidden» methods, like iron cramps or the use of stone wedges, etc. In seismic zones these devices were usual. Another problem relates to the deformation; a slight yielding of the abutments, or even the compression of the mortar joints, may lead to some cracking and the descent of the central keystone. Even a tiny descent will convert the original straight line of the intrados in a broken line with a visible «kink» or angle in the middle. Of course, both problems should be avoided. Finally, the wedge form of the voussoirs lead to acute angles in the stones and this can produce partial fractures; this occurs usually at the inferior border of the springers at the abutments. It follows, that to build a successful plate-bande is not an easy matter. Also, the structural study of plate-bandes is far from simple, and mechanics and geometry are related in a particular way. In the present paper we will concentrate on the structural aspects and their constructive consequences, with a historical approach. We will outline the development of structural analysis of plate-bandes from ca. 1700 until today. This brief history has a more than purely academic interest. Different approaches and theories pointed to particular problem, and though the solution given may have been incorrect, the question posed was often pertinent. The paper ends with the application of modern Limit Analysis of Masonry Structures, developed mainly by professor Heyman in the last fifty years. The work aims, also, to give some clues for the actual architect and engineer involved in the analysis or restoration of masonry buildings.

Cross-talk response analysis on a piezoelectric

The study of the cross-talk and its effects in the performance of a matrix array of piezoelectric elements is an important issue. This corresponds to the study of the cross mode of vibration of each one of the piezoelectric elements that form the ultrasonic array. The aim is to detect and measure the cross-talk that is generated for the cross mode of vibration. In order to accomplish this task, an array of 2x3 elements was designed and developed. This was constructed using 8 MHz piezoelectric ceramics. A number of configurations have been experimented, considering the excitation of an increasing number of elements, in order to detect and measure the propagation of wave interference. Initial results show the way cross-talk interferes the beam generated by the array, this causing attenuation of the main beam and other negative effects.

Piezoelectric and electroacoustic properties of Ti-doped AlN thin films as a function of Ti content

In this work we present the assessment of the structural and piezoelectric properties of Al(0.5-x)TixN0.5 compounds (titanium content menor que6% atomic), which are expected to possess improved properties than conventional AlN films, such as larger piezoelectric activity, thermal stability of frequency and temperature resistance. Al:Ti:N films were deposited from a twin concentric target of Al and Ti by reactive AC sputtering, which provided films with a radial gradient of the Ti concentration. The properties of the films were investigated as a function of their composition, which was measured by electron dispersive energy dispersive X-ray spectroscopy and Rutherford backscattering spectrometry. The microstructure and morphology of the films were assessed by X-ray diffraction and infrared reflectance. Their electroacoustic properties and dielectric constant were derived from the frequency response of BAW test resonators. Al:Ti:N films properties appear to be strongly dependent on the Ti content, which modifies the AlN wurtzite crystal structure leading to greater dielectric constant, lower sound velocities, lower electromechanical factor and moderately improved temperature coefficient of the resonant frequency.

Modeling Piezoelectric Harvesting Materials in Road Traffic Applications.

En esta comunicación se presenta el método para obtener modelos equivalentes eléctricos de materiales piezoeléctricos utilizados en entornos con tráfico vial para aplicaciones "Energy Harvesting". Los resultados experimentales se procesan para determinar la estructura topológica óptima y la tecnología de los elementos semiconductores utilizados en la etapa de entrada del sistema de alimentación "harvesting". Asimismo se presenta el modelo de la fuente de alimentación no regulada bajo demanda variable de corriente. Abstract: The method to obtain electrical equivalent models of piezoelectric materials used in energy harvesting road traffic environment is presented in this paper. The experimental results are processed in order to determine the optimal topological structure and technology of the semiconductor elements used in the input stage of the power harvesting system. The non regulated power supply model under variable current demand is also presented.

Simulation, construction and characterization of a piezoelectric transducer using rexolite as acoustic matching

This article describes the simulation and characterization of an ultrasonic transducer using a new material called Rexolite to be used as a matching element. This transducer was simulated using a commercial piezoelectric ceramic PIC255 at 8 MHz. Rexolite, the new material, presents an excellent acoustic matching, specially in terms of the acoustic impedance of water. Finite elements simulations were used in this work. Rexolite was considered as a suitable material in the construction of the transducer due to its malleability and acoustic properties, to validate the simulations a prototype transducer was constructed. Experimental measurements were used to determine the resonance frequency of the prototype transducer. Simulated and experimental results were very similar showing that Rexolite may be an excellent matching, particularly for medical applications.

Wide-angle, high-concentration photovoltaics to compete with flat plate systems

A novel photovoltaic concentrator enables highly uniform irradiance on a small number of efficient solar cells. The maximum electrical power of a photovoltaic (PV) energy installation depends on three factors: the available irradiance, the size of the systems collecting sunlight, and the rate at which the device transforms light into electricity (the conversion efficiency). Developers can maximize the irradiance by carefully selecting the site and orientation of the solar facility. But they can only expand their sunlight collection systems for standard flat plate PV devices by increasing the number of solar cells, at greater cost. Here, we consider the advantages of an alternative PV system that produces more energy without increasing the number of cells used (actually, reducing it), by improving the conversion rates.We also present a new device that may enhance the commercial viability of such technologies.

Moment transfer and influence of transverse beams in interior waffle flat plate-column connections under lateral loading

This paper addresses two aspects of the behavior of interior reinforced concrete waffle flat plate?column connections under lateral loads: the share of the unbalanced moment between flexure and excentric shear, and the effect of the transverse beams. A non-linear finite element model (benchmark model) was developed and calibrated with the results of quasi-static cyclic tests conducted on a 3/5 scale specimen. First, from this numerical model, the portion cv of the unbalanced moment transferred by the excentricity of shear about the centroid of the critical sections defined by Eurocode 2 (EC-2) and by ACI 318-11 was calculated and compared with the share-out prescribed by these codes. It is found that while the critical section of EC-2 is consistent with the cv provided by this code, in the case of ACI 318-11, the value assigned to cv is far below (about 50% smaller) the actual one obtained with the numerical simulations. Second, from the benchmark model, seven additional models were developed by varying the depth D of the transverse beam over the thickness h of the plate. It was found that the ductility of the connection and the effective width of the plate can respectively be increased up to 50% and 10% by raising D/h to 2 and 1.5.

Piezoelectric sensors system for impact detecting

This work describes an acoustic system that allows the automatic detection and location of mechanical impacts on metallic based structures, which is suitable in robotics and industrial applications. The system is based on the time delays of propagation of the acoustic waves along the metallic based structure and it determines the instant and the position when and were the impact has been produced by piezoelectric sensors and an electronic-computerized system. We have obtained that for distance impact of 40 cm and 50 cm the time delay is 2 s and 72 s respectively.

A generalized method for flat plates impact detection and location

In the last years, many analyses from acoustic signal processing have been used for different applications. In most cases, these sensor systems are based on the determination of times of flight for signals from every transducer. This paper presents a flat plate generalization method for impact detection and location over linear links or bars-based structures. The use of three piezoelectric sensors allow to achieve the position and impact time while the use of additional sensors lets cover a larger area of detection and avoid wrong timing difference measurements. An experimental setup and some experimental results are briefly presented.

Laminar counterflow parallel-plate heat exchangers: Exact and approximate solutions

Multilayered, counterflow, parallel-plate heat exchangers are analyzed numerically and theoretically. The analysis, carried out for constant property fluids, considers a hydrodynamically developed laminar flow and neglects longitudinal conduction both in the fluid and in the plates. The solution for the temperature field involves eigenfunction expansions that can be solved in terms of Whittaker functions using standard symbolic algebra packages, leading to analytical expressions that provide the eigenvalues numerically. It is seen that the approximate solution obtained by retaining the first two modes in the eigenfunction expansion provides an accurate representation for the temperature away from the entrance regions, specially for long heat exchangers, thereby enabling simplified expressions for the wall and bulk temperatures, local heat-transfer rate, overall heat-transfer coefficient, and outlet bulk temperatures. The agreement between the numerical and theoretical results suggests the possibility of using the analytical solutions presented herein as benchmark problems for computational heat-transfer codes.

Thermal, stress, and traps effects in AlGaN/GaN HEMTs

GaN y AlN son materiales semiconductores piezoeléctricos del grupo III-V. La heterounión AlGaN/GaN presenta una elevada carga de polarización tanto piezoeléctrica como espontánea en la intercara, lo que genera en su cercanía un 2DEG de grandes concentración y movilidad. Este 2DEG produce una muy alta potencia de salida, que a su vez genera una elevada temperatura de red. Las tensiones de puerta y drenador provocan un stress piezoeléctrico inverso, que puede afectar a la carga de polarización piezoeléctrica y así influir la densidad 2DEG y las características de salida. Por tanto, la física del dispositivo es relevante para todos sus aspectos eléctricos, térmicos y mecánicos. En esta tesis se utiliza el software comercial COMSOL, basado en el método de elementos finitos (FEM), para simular el comportamiento integral electro-térmico, electro-mecánico y electro-térmico-mecánico de los HEMTs de GaN. Las partes de acoplamiento incluyen el modelo de deriva y difusión para el transporte electrónico, la conducción térmica y el efecto piezoeléctrico. Mediante simulaciones y algunas caracterizaciones experimentales de los dispositivos, hemos analizado los efectos térmicos, de deformación y de trampas. Se ha estudiado el impacto de la geometría del dispositivo en su auto-calentamiento mediante simulaciones electro-térmicas y algunas caracterizaciones eléctricas. Entre los resultados más sobresalientes, encontramos que para la misma potencia de salida la distancia entre los contactos de puerta y drenador influye en generación de calor en el canal, y así en su temperatura. El diamante posee une elevada conductividad térmica. Integrando el diamante en el dispositivo se puede dispersar el calor producido y así reducir el auto-calentamiento, al respecto de lo cual se han realizado diversas simulaciones electro-térmicas. Si la integración del diamante es en la parte superior del transistor, los factores determinantes para la capacidad disipadora son el espesor de la capa de diamante, su conductividad térmica y su distancia a la fuente de calor. Este procedimiento de disipación superior también puede reducir el impacto de la barrera térmica de intercara entre la capa adaptadora (buffer) y el substrato. La muy reducida conductividad eléctrica del diamante permite que pueda contactar directamente el metal de puerta (muy cercano a la fuente de calor), lo que resulta muy conveniente para reducir el auto-calentamiento del dispositivo con polarización pulsada. Por otra parte se simuló el dispositivo con diamante depositado en surcos atacados sobre el sustrato como caminos de disipación de calor (disipador posterior). Aquí aparece una competencia de factores que influyen en la capacidad de disipación, a saber, el surco atacado contribuye a aumentar la temperatura del dispositivo debido al pequeño tamaño del disipador, mientras que el diamante disminuiría esa temperatura gracias a su elevada conductividad térmica. Por tanto, se precisan capas de diamante relativamente gruesas para reducer ele efecto de auto-calentamiento. Se comparó la simulación de la deformación local en el borde de la puerta del lado cercano al drenador con estructuras de puerta estándar y con field plate, que podrían ser muy relevantes respecto a fallos mecánicos del dispositivo. Otras simulaciones se enfocaron al efecto de la deformación intrínseca de la capa de diamante en el comportamiento eléctrico del dispositivo. Se han comparado los resultados de las simulaciones de la deformación y las características eléctricas de salida con datos experimentales obtenidos por espectroscopía micro-Raman y medidas eléctricas, respectivamente. Los resultados muestran el stress intrínseco en la capa producido por la distribución no uniforme del 2DEG en el canal y la región de acceso. Además de aumentar la potencia de salida del dispositivo, la deformación intrínseca en la capa de diamante podría mejorar la fiabilidad del dispositivo modulando la deformación local en el borde de la puerta del lado del drenador. Finalmente, también se han simulado en este trabajo los efectos de trampas localizados en la superficie, el buffer y la barrera. Las medidas pulsadas muestran que tanto las puertas largas como las grandes separaciones entre los contactos de puerta y drenador aumentan el cociente entre la corriente pulsada frente a la corriente continua (lag ratio), es decir, disminuir el colapse de corriente (current collapse). Este efecto ha sido explicado mediante las simulaciones de los efectos de trampa de superficie. Por su parte, las referidas a trampas en el buffer se enfocaron en los efectos de atrapamiento dinámico, y su impacto en el auto-calentamiento del dispositivo. Se presenta también un modelo que describe el atrapamiento y liberación de trampas en la barrera: mientras que el atrapamiento se debe a un túnel directo del electrón desde el metal de puerta, el desatrapamiento consiste en la emisión del electrón en la banda de conducción mediante túnel asistido por fonones. El modelo también simula la corriente de puerta, debida a la emisión electrónica dependiente de la temperatura y el campo eléctrico. Además, también se ilustra la corriente de drenador dependiente de la temperatura y el campo eléctrico. ABSTRACT GaN and AlN are group III-V piezoelectric semiconductor materials. The AlGaN/GaN heterojunction presents large piezoelectric and spontaneous polarization charge at the interface, leading to high 2DEG density close to the interface. A high power output would be obtained due to the high 2DEG density and mobility, which leads to elevated lattice temperature. The gate and drain biases induce converse piezoelectric stress that can influence the piezoelectric polarization charge and further influence the 2DEG density and output characteristics. Therefore, the device physics is relevant to all the electrical, thermal, and mechanical aspects. In this dissertation, by using the commercial finite-element-method (FEM) software COMSOL, we achieved the GaN HEMTs simulation with electro-thermal, electro-mechanical, and electro-thermo-mechanical full coupling. The coupling parts include the drift-diffusion model for the electron transport, the thermal conduction, and the piezoelectric effect. By simulations and some experimental characterizations, we have studied the device thermal, stress, and traps effects described in the following. The device geometry impact on the self-heating was studied by electro-thermal simulations and electrical characterizations. Among the obtained interesting results, we found that, for same power output, the distance between the gate and drain contact can influence distribution of the heat generation in the channel and thus influence the channel temperature. Diamond possesses high thermal conductivity. Integrated diamond with the device can spread the generated heat and thus potentially reduce the device self-heating effect. Electro-thermal simulations on this topic were performed. For the diamond integration on top of the device (top-side heat spreading), the determinant factors for the heat spreading ability are the diamond thickness, its thermal conductivity, and its distance to the heat source. The top-side heat spreading can also reduce the impact of thermal boundary resistance between the buffer and the substrate on the device thermal behavior. The very low electrical conductivity of diamond allows that it can directly contact the gate metal (which is very close to the heat source), being quite convenient to reduce the self-heating for the device under pulsed bias. Also, the diamond coated in vias etched in the substrate as heat spreading path (back-side heat spreading) was simulated. A competing mechanism influences the heat spreading ability, i.e., the etched vias would increase the device temperature due to the reduced heat sink while the coated diamond would decrease the device temperature due to its higher thermal conductivity. Therefore, relative thick coated diamond is needed in order to reduce the self-heating effect. The simulated local stress at the gate edge of the drain side for the device with standard and field plate gate structure were compared, which would be relevant to the device mechanical failure. Other stress simulations focused on the intrinsic stress in the diamond capping layer impact on the device electrical behaviors. The simulated stress and electrical output characteristics were compared to experimental data obtained by micro-Raman spectroscopy and electrical characterization, respectively. Results showed that the intrinsic stress in the capping layer caused the non-uniform distribution of 2DEG in the channel and the access region. Besides the enhancement of the device power output, intrinsic stress in the capping layer can potentially improve the device reliability by modulating the local stress at the gate edge of the drain side. Finally, the surface, buffer, and barrier traps effects were simulated in this work. Pulsed measurements showed that long gates and distances between gate and drain contact can increase the gate lag ratio (decrease the current collapse). This was explained by simulations on the surface traps effect. The simulations on buffer traps effects focused on illustrating the dynamic trapping/detrapping in the buffer and the self-heating impact on the device transient drain current. A model was presented to describe the trapping and detrapping in the barrier. The trapping was the electron direct tunneling from the gate metal while the detrapping was the electron emission into the conduction band described by phonon-assisted tunneling. The reverse gate current was simulated based on this model, whose mechanism can be attributed to the temperature and electric field dependent electron emission in the barrier. Furthermore, the mechanism of the device bias via the self-heating and electric field impact on the electron emission and the transient drain current were also illustrated.

Analysis of plate bending by means of high order finite hyperelements

The possibilities and limitations of high order hyperelements in plate bending analysis are discussed. Explicit shape functions for some types of triangular elements are given. These elements are applied to simple cases to assess their computational efficiency.