969 resultados para Optical Cooling Of Atoms


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"U.S. Atomic Energy Commission Contract AT(29-1)-1106."

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"Issued March 1981."

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Mode of access: Internet.

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Mode of access: Internet.

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"2 August 1957."

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Cover title.

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Semi-insulating InP was implanted with MeV P, As, Ga, and In ions, and the resulting evolution of structural properties with increased annealing temperature was analyzed using double crystal x-ray diffractometry and cross sectional transmission electron microscopy. The types of damage identified are correlated with scanning spreading resistance and scanning capacitance measurements, as well as with previously measured Hall effect and time resolved photoluminescence results. We have identified multiple layers of conductivity in the samples which occur due to the nonuniform damage profile of a single implant. Our structural studies have shown that the amount and type of damage caused by implantation does not scale with implant ion atomic mass. (C) 2004 American Institute of Physics.

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Microstructural and optical properties of InAs-inserted and reference single GaAsN/GaAs quantum-well (QW) structures grown by metalorganic chemical vapor deposition were investigated using cross-sectional transmission electron microscopy and photoluminescence (PL). Significant enhancement of PL intensity and a blueshift of PL emission were observed from the InAs-inserted GaAsN/GaAs QW structure, compared with the single GaAsN/GaAs QW structure. Strain compensation and In-induced reduction of N incorporation are suggested to be two major factors affecting the optical properties. (C) 2004 American Institute of Physics.

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We investigate the emission of multimodal polarized light from light emitting devices due to spin-aligned carrier injection. The results are derived through operator Langevin equations, which include thermal and carrier-injection fluctuations, as well as nonradiative recombination and electronic g-factor temperature dependence. We study the dynamics of the optoelectronic processes and show how the temperature-dependent g factor and magnetic field affect the degree of polarization of the emitted light. In addition, at high temperatures, thermal fluctuation reduces the efficiency of the optoelectronic detection method for measuring the degree of spin polarization of carrier injection into nonmagnetic semicondutors.

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Photopyroelectric spectroscopy (PPE) was used to study the thermal and optical properties of melanins. The photopyroelectric intensity signal and its phase were independently measured as a function of wavelength and chopping frequency for a given wavelength in the saturation part of the PPE spectrum. Equations for both the intensity and the phase of the PPE signal were used to fit the experimental results. From these fits we obtained for the first time, with great accuracy, the thermal diffusivity coefficient, the thermal conductivity, and the specific heat of the samples, as well as a value for the condensed phase optical gap, which we found to be 1.70 eV. (c) 2005 American Institute of Physics.