949 resultados para Higher temperatures


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We have established a link between the global ac response and the local flux distribution of superconducting films by combining magnetic ac susceptibility, dc magnetization, and magneto-optical measurements. The investigated samples are three Nb films: a plain specimen, used as a reference sample, and other two films patterned with square arrays of antidots. At low temperatures and small ac amplitudes of the excitation field, the Meissner screening prevents penetration of flux into the sample. Above a certain ac drive threshold, flux avalanches are triggered during the first cycle of the ac excitation. The subsequent periodic removal, inversion, and rise of flux occurs essentially through the already-created dendrites, giving rise to an ac susceptibility signal weakly dependent on the applied field. The intradendrite flux oscillation is followed, at higher values of the excitation field, by a more drastic process consisting of creation of new dendrites and antidendrites. In this more invasive regime, the ac susceptibility shows a clear field dependence. At higher temperatures a smooth penetration occurs, and the flux profile is characteristic of a critical state. We have also shown that the regime dominated by vortex avalanches can be reliably identified by ac susceptibility measurements. © 2011 American Physical Society.

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Doping tin dioxide (SnO2) with pentavalent Sb5+ ions leads to an enhancement in the electrical conductivity of this material, because Sb5+ substitutes Sn4+ in the matrix, promoting an electronic density increase in the conduction band, due to the donor-like nature of the doping atom. Results of computational simulation, based on the Density Functional Theory (DFT), of SnO2:4%Sb and SnO2:8%Sb show that the bandgap magnitude is strongly affected by the doping concentration, because the energy value found for 4 at%Sb and 8 at%Sb was 3.27 eV and 3.13 eV, respectively, whereas the well known value for undoped SnO2 is about 3.6 eV. Sb-doped SnO2 thin films were obtained by the sol-gel-dip-coating technique. The samples were submitted to excitation with below theoretical bandgap light (450 nm), as well as above bandgap light (266 nm) at low temperature, and a temperature-dependent increase in the conductivity is observed. Besides, an unusual temperature and time dependent decay when the illumination is removed is also observed, where the decay time is slower for higher temperatures. This decay is modeled by considering thermally activated cross section of trapping centers, and the hypothesis of grain boundary scattering as the dominant mechanism for electronic mobility. © 2012 Elsevier B.V. All rights reserved.

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Germination parameters of the response to temperature and water potential from four common bean (Phaseolus vulgaris) lines based on thermal-time and hydrotime concepts were estimated to verify to what extent they can predict germination under different thermal and water conditions. The cultivars IPR Uirapuru and IAPAR 81 (drought-tolerant), and Grauna and Carioca (not tolerant) were used. The isothermal assays were performed in a temperature gradient block, and the assays with different osmotic potentials (PEG 6000) were performed in germination chambers. Seeds from drought-tolerant cultivars spent less time to germinate at supra-optimum temperatures than non-tolerant ones, and the cultivar Uirapuru (drought-tolerant) germinated faster in response to reduced Ψ and low temperatures. The parameter Ψb(50) did not discriminate between drought-tolerant and non-tolerant lines at the infraoptimum temperature range, but it can be used to identify drought-tolerant lines at high temperatures. In general, the hydrotime model reproduced the actual germination data relatively well, chiefly at higher temperatures. This study evidenced that the hydrotime model can be used to describe the germination of common bean seeds under reduced water potentials, and as a screening tool for drought-tolerant bean genotypes.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Pós-graduação em Ciência dos Materiais - FEIS

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Pós-graduação em Engenharia Mecânica - FEG

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Incluye Bibliografía

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)