Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT's reliability

AlGaN/GaN high electron mobility transistors (HEMT) are key devices for the next generation of high-power, high-frequency and high-temperature electronics applications. Although significant progress has been recently achieved [1], stability and reliability are still some of the main issues under investigation, particularly at high temperatures [2-3]. Taking into account that the gate contact metallization is one of the weakest points in AlGaN/GaN HEMTs, the reliability of Ni, Mo, Pt and refractory metal gates is crucial [4-6]. This work has been focused on the thermal stress and reliability assessment of AlGaN/GaN HEMTs. After an unbiased storage at 350 o C for 2000 hours, devices with Ni/Au gates exhibited detrimental IDS-VDS degradation in pulsed mode. In contrast, devices with Mo/Au gates showed no degradation after similar storage conditions. Further capacitance-voltage characterization as a function of temperature and frequency revealed two distinct trap-related effects in both kinds of devices. At low frequency (< 1MHz), increased capacitance near the threshold voltage was present at high temperatures and more pronounced for the Ni/Au gate HEMT and as the frequency is lower. Such an anomalous “bump” has been previously related to H-related surface polar charges [7]. This anomalous behavior in the C-V characteristics was also observed in Mo/Au gate HEMTs after 1000 h at a calculated channel temperatures of around from 250 o C (T2) up to 320 ºC (T4), under a DC bias (VDS= 25 V, IDS= 420 mA/mm) (DC-life test). The devices showed a higher “bump” as the channel temperature is higher (Fig. 1). At 1 MHz, the higher C-V curve slope of the Ni/Au gated HEMTs indicated higher trap density than Mo/Au metallization (Fig. 2). These results highlight that temperature is an acceleration factor in the device degradation, in good agreement with [3]. Interface state density analysis is being performed in order to estimate the trap density and activation energy.

Bit noise from an optical logic gate with laser diodes

Output bits from an optical logic cell present noise due to the type of technique used to obtain the Boolean functions of two input data bits. We have simulated the behavior of an optically programmable logic cell working with Fabry Perot-laser diodes of the same type employed in optical communications (1550nm) but working here as amplifiers. We will report in this paper a study of the bit noise generated from the optical non-linearity process allowing the Boolean function operation of two optical input data signals. Two types of optical logic cells will be analyzed. Firstly, a classical "on-off" behavior, with transmission operation of LD amplifier and, secondly, a more complicated configuration with two LD amplifiers, one working on transmission and the other one in reflection mode. This last configuration has nonlinear behavior emulating SEED-like properties. In both cases, depending on the value of a "1" input data signals to be processed, a different logic function can be obtained. Also a CW signal, known as control signal, may be apply to fix the type of logic function. The signal to noise ratio will be analyzed for different parameters, as wavelength signals and the hysteresis cycles regions associated to the device, in relation with the signals power level applied. With this study we will try to obtain a better understanding of the possible effects present on an optical logic gate with Laser Diodes.

Assessment of interatomic potentials for atomistic analysis of static and dynamic properties of screw dislocations in W

Screw dislocations in bcc metals display non-planar cores at zero temperature which result in high lattice friction and thermally-activated strain rate behavior. In bcc W, electronic structure molecular statics calculations reveal a compact, non-degenerate core with an associated Peierls stress between 1.7 and 2.8 GPa. However, a full picture of the dynamic behavior of dislocations can only be gained by using more efficient atomistic simulations based on semiempirical interatomic potentials. In this paper we assess the suitability of five different potentials in terms of static properties relevant to screw dislocations in pure W. Moreover, we perform molecular dynamics simulations of stress-assisted glide using all five potentials to study the dynamic behavior of screw dislocations under shear stress. Dislocations are seen to display thermally-activated motion in most of the applied stress range, with a gradual transition to a viscous damping regime at high stresses. We find that one potential predicts a core transformation from compact to dissociated at finite temperature that affects the energetics of kink-pair production and impacts the mechanism of motion. We conclude that a modified embedded-atom potential achieves the best compromise in terms of static and dynamic screw dislocation properties, although at an expense of about ten-fold compared to central potentials.

Electrochemical potentials (Quasi-Fermi Levels) and the operation of hot-carrier, impact-ionization, and intermediate-band solar cells

In the framework of the so-called third generation solar cells, three main concepts have been proposed in order to exceed the limiting efficiency of single-gap solar cells: the hot-carrier solar cell, the impact-ionization or multiple-exciton-generation solar cell, and the intermediate-band solar cell. At first sight, the three concepts are different, but in this paper, we illustrate how all these concepts, including the single-gap solar cell, share a common trunk that we call "core photovoltaic material." We demonstrate that each one of these next-generation concepts differentiates in fact from this trunk depending on the hypotheses that are made about the physical principles governing the electron electrochemical potentials. In the process, we also clarify the differences between electron, phonon, and photon chemical potentials (the three fundamental particles involved in the operation of the solar cell). The in-depth discussion of the physics involved about the operation of these cells also provides new insights about the operation of these cells.

Low-power vertical cavity NAND gate

The study of the Vertical-Cavity Semiconductor Optical Amplifiers (VCSOAs) for optical signal processing applications is increasing his interest. Due to their particular structure, the VCSOAs present some advantages when compared to their edge-emitting counterparts including low manufacturing costs, high coupling efficiency to optical fibers and the ease to fabricate 2-D arrays of this kind of devices. As a consequence, all-optical logic gates based on VCSOAs may be very promising devices for their use in optical computing and optical switching in communications. Moreover, since all the boolean logic functions can be implemented by combining NAND logic gates, the development of a Vertical-Cavity NAND gate would be of particular interest. In this paper, the characteristics of the dispersive optical bistability appearing on a VCSOA operated in reflection are studied. A progressive increment of the number of layers compounding the top Distributed Bragg Reflector (DBR) of the VCSOA results on a change on the shape of the appearing bistability from an S-shape to a clockwise bistable loop. This resulting clockwise bistability has high on-off contrast ratio and input power requirements one order of magnitude lower than those needed for edge-emitting devices. Based on these results, an all-optical vertical-cavity NAND gate with high on-off contrast ratio and an input power for operation of only 10|i\V will be reported in this paper.

A self-timed multipurpose delay sensor for field programmable gate arrays (FPGAs)

This paper presents a novel self-timed multi-purpose sensor especially conceived for Field Programmable Gate Arrays (FPGAs). The aim of the sensor is to measure performance variations during the life-cycle of the device, such as process variability, critical path timing and temperature variations. The proposed topology, through the use of both combinational and sequential FPGA elements, amplifies the time of a signal traversing a delay chain to produce a pulse whose width is the sensor’s measurement. The sensor is fully self-timed, avoiding the need for clock distribution networks and eliminating the limitations imposed by the system clock. One single off- or on-chip time-to-digital converter is able to perform digitization of several sensors in a single operation. These features allow for a simplified approach for designers wanting to intertwine a multi-purpose sensor network with their application logic. Employed as a temperature sensor, it has been measured to have an error of ±0.67 °C, over the range of 20–100 °C, employing 20 logic elements with a 2-point calibration.

Gate of Serranos [Material gráfico] :Valencia

Resumen: Descripción: vista de las Torres de Serranos

Vista de la puerta de Serranos de Valencia [Material gráfico] =Vue de la Porte de Serranos à Valence=View of the Gate of Serranos at Valencia

Datos de publicación tomados de la obra a la que pertenece

Interaction between interconnected and isolated grounding systems: a case study of transferred potentials

The effect caused by ground fault current in a complex system of interacting electrodes is theoretically studied. The calculation applies to a specific case in which a set of interconnected electrodes, which are part of a grounding facility network, are activated by a ground fault current. Transferred potentials to adjacent passive electrodes are calculated and the most relevant parameters of the electrode system are evaluated. Finally, the convenience of connecting the grounding electrodes is discussed.

Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric

GaN based high electron mobility transistors have draw great attention due to its potential in high temperature, high power and high frequency applications [1, 2]. However, significant gate leakage current is still one of the issues which need to be solved to improve the performance and reliability of the devices [3]. Several research groups have contributed to solve this problem by using metal–oxide–semiconductor HEMTs (MOSHEMTs), with a thin dielectric layer, such as SiO2 [4], Al2O3 [5], HfO2 [6] and Gd2O3 [7] between the gate and the barrier layer on AlGaN/GaN heterostructures. Gd2O3 has shown low interfacial density of states(Dit) with GaN and a high dielectric constant and low electrical leakage currents [8], thus is considered as a promising candidate for the gate dielectrics on GaN. MOS-HEMTs using Gd2O3 grown by electron-beam heating [7] or molecular beam epitaxy (MBE) [8] on GaN or AlGan/GaN structure have been investigated, but further research is still needed in Gd2O3 based AlGaN/GaN MOSHEMTs.

Vista de la puerta de entrada de la fortaleza de Xativa [ [Material gráfico]= Vue de la porte d'entrèe de la forteresse de Xativa, et d'une partie de la ville de St. Philippe = View of the great gate of the fortress of Xativa, and of a part of the town of St. Philip

Datos de publicación tomados de la obra a la que pertenece

Recurrent excitatory postsynaptic potentials induced by synchronized fast cortical oscillations

Gamma frequency (about 20–70 Hz) oscillations occur during novel sensory stimulation, with tight synchrony over distances of at least 7 mm. Synchronization in the visual system has been proposed to reflect coactivation of different parts of the visual field by a single spatially extended object. We have shown that intracortical mechanisms, including spike doublet firing by interneurons, can account for tight long-range synchrony. Here we show that synchronous gamma oscillations in two sites also can cause long-lasting (>1 hr) potentiation of recurrent excitatory synapses. Synchronous oscillations lasting >400 ms in hippocampal area CA1 are associated with an increase in both excitatory postsynaptic potential (EPSP) amplitude and action potential afterhyperpolarization size. The resulting EPSPs stabilize and synchronize a prolonged beta frequency (about 10–25 Hz) oscillation. The changes in EPSP size are not expressed during non-oscillatory behavior but reappear during subsequent gamma-oscillatory events. We propose that oscillation-induced EPSPs serve as a substrate for memory, whose expression either enhances or blocks synchronization of spatially separated sites. This phenomenon thus provides a dynamical mechanism for storage and retrieval of stimulus-specific neuronal assemblies.

Calcium electrogenesis in distal apical dendrites of layer 5 pyramidal cells at a critical frequency of back-propagating action potentials

Action potentials in juvenile and adult rat layer-5 neocortical pyramidal neurons can be initiated at both axonal and distal sites of the apical dendrite. However, little is known about the interaction between these two initiation sites. Here, we report that layer 5 pyramidal neurons are very sensitive to a critical frequency of back-propagating action potentials varying between 60 and 200 Hz in different neurons. Bursts of four to five back-propagating action potentials above the critical frequency elicited large regenerative potentials in the distal dendritic initiation zone. The critical frequency had a very narrow range (10–20 Hz), and the dendritic regenerative activity led to further depolarization at the soma. The dendritic frequency sensitivity was suppressed by blockers of voltage-gated calcium channels, and also by synaptically mediated inhibition. Calcium-fluorescence imaging revealed that the site of largest transient increase in intracellular calcium above the critical frequency was located 400–700 μm from the soma at the site for initiation of calcium action potentials. Thus, the distal dendritic initiation zone can interact with the axonal initiation zone, even when inputs to the neuron are restricted to regions close to the soma, if the output of the neuron exceeds a critical frequency.