Gas sensor properties of zno nanorods grown by chemical bath deposition

The present work shows a study about the growing of ZnO nanorods by chemical bath deposition (CBD) and its application as gas sensor. It was prepared ZnO nanorods and Au decorated ZnO nanorods and the samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and gas sensing response measurements. The results obtained by XRD show the growth of ZnO phase. It was possible to observe the formation of uniform dense well-aligned ZnO nanorods. The results obtained also revealed that Ag nanoparticles have decorated the surface of ZnO nanorods successfully. Au nanoparticles with diameter of a few nanometers were distributed over the ZnO surface nanorods. The gas sensing response measurements showed a behavior of n type semiconductor. Furthermore, the Au-functionalized ZnO nanorods gas sensors showed a considerably enhanced response at 250 and 300 °C.

Deposição de filmes finos de SnO2 e GaAs, visando confecção de dispositivos baseados na heterojunção SnO2/GaAs

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Mutagenic potential of lettuce grown from irradiated seeds

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Two-spotted spider mite and its natural enemies on strawberry grown as protected and unprotected crops in Norway and Brazil

Cultivation of strawberry in plastic tunnels has increased considerably in Norway and in southeastern Brazil, mainly in an attempt to protect the crop from unsuitable climatic factors and some diseases as well as to allow growers to expand the traditional production season. It has been hypothesized that cultivation under tunnels could increase the incidence of one of its major pests in many countries where strawberry is cultivated, including Norway and Brazil, the two spotted spider mite, Tetranychus urticae. The objective of this study was to evaluate the effect of the use of tunnels on the incidence of T. urticae and on its natural enemies on strawberry in two ecologically contrasting regions, Norway (temperate) and southeastern Brazil (subtropical). In both countries, peak densities of T. urticae in tunnels and in the open fields were lower than economic thresholds reported in the literature. Factors determining that systematically seem to be the prevailing relatively low temperature in Norway and high relative humidity in both countries. The levels of occurrence in Norway and Brazil in 2010 were so low that regardless of any potential effect of the use of tunnel, no major differences were observed between the two cropping systems in relation to T. urticae densities. In 2009 in Norway and in 2011 in Brazil, increase in T. urticae population seemed to have been restrained mainly by rainfall in the open field and by predatory mites in the tunnels. Phytoseiids were the most numerous predatory mite group of natural occurrence on strawberry, and the prevalence was higher in Brazil, where the most abundant species on strawberry leaves were Neoseiulus anonymus and Phytoseiulus macropilis. In Norway, the most abundant naturally occurring phytoseiids on strawberry leaves were Typhlodromus (Anthoseius) rhenanus and Typhlodromus (Typhlodromus) pyri. Predatory mites were very rare in the litter samples collected in Norway. Infection rate of the pest by the fungus Neozygites floridana (Neozygitaceae) was low. The results of this work suggest that in Norway the use of tunnels might not affect the population densities of T. urticae on strawberry in years of lower temperatures. When temperature is not a limiting factor for the development of T. urticae in that country (apparently always the case in southern Brazil), strawberry cultivation in the tunnels may allow T. urticae to reach higher population levels than in open fields (because of the provided protection from the direct impact of rainfall), but natural enemies may prevent higher levels from being reached.

Luminescence of Eu3+ in the thin film heterojunction GaAs/SnO2

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Photoluminescence of the Eu-doped thin film heterojunction GaAs/SnO2 and rare-earth doping distribution

Tin dioxide (SnO2) thin films doped with Eu3+, are deposited by the sol-gel-dip-coating process on top of GaAs films, which is deposited by resistive evaporation on glass substrate. This heterojunction assembly presents luminescence from the rare-earth ion, unlike the SnO2 deposition directly on a glass substrate, where emissions from the Eu3+ transitions are absent. The Eu3+ transitions are clearly identified and are similar to the observation on SnO2 pressed powder (pellets), thermally treated at much higher temperatures. However, in the form of heterojunction films, the Eu emission comes along a broad band, located at higher energy compared to Eu3+ transitions, which is blue-shifted as the thermal annealing temperature increases. The size of nanocrystallites points toward quantum confinement or electron transfer between oxygen vacancies, originated from the disorder in the material, and trivalent rare-earth ions, which present acceptor-like character in this matrix. This electron transfer may relax for higher temperatures in the case of pellets, and the broad band is eliminated.

Nutritional status of the cauliflower cultivar ‘verona’ grown with omission of out added macronutrients

Knowledge of plant nutritional status allows an understanding of the physiological responses of plants to crop fertilization. A hydroponic experiment evaluated the symptoms of macronutrient deficiency in cauliflower 'Verona'and determined: a) the macronutrient contents of foliar tissues when visual symptoms were observed, b) macronutrients content of foliar and inflorescence tissues at harvest. The effect of nutrient deficiency on inflorescence mass was also evaluated. Nitrogen deficiency caused chlorosis followed by purple color in the old leaves, while P deficiency caused only chlorosis in old leaves. Chlorosis at the edge of old leaves progressing to the center of the leaves was observed with the omission of K, and after was observed necrosis in the chlorotic areas. Ca deficiency caused tip burn in new leaves, while Mg deficiency caused internerval chlorosis in old leaves. The omission of eachmacronutrient reduced inflorescence dry matter. This deleterious effect was larger for N, P, and K deficiencies, reducing inflorescence dry matter by 87, 49, and 42%, respectively. When the nutrient solutions without N, P, K, Ca, or Mg were supplied to cauliflower plants, the macronutrient contents at harvest were 8.8, 0.6, 3.5, 13.0, and 0.8 g kg(-1) in the foliar tissues and 27.3, 2.2, 21.6, 1.1, and 0.7 g kg(-1) in the inflorescence tissues, respectively.

Fabrication and structural characterization of bismuth niobate thin films grown by chemical solution deposition

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Root morphology and phosphorus uptake by potato cultivars grown under deficient and sufficient phosphorus supply

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Lipid formation and γ-linolenic acid production by Mucor circinelloides and Rhizopus sp., grown on vegetable oil

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Infestation of Caliothrips phaseoli (Thysanoptera: Thripidae) on bean cultivars grown in the winter, rainy, and dry seasons in Brazil

The present study aimed to identify common bean (Phaseolus vulgaris L.) cultivars less susceptible to Caliothrips phaseoli (Hood) in different growing seasons, to evaluate whether climatic conditions influence plant resistance to C. phaseoli infestation, and to investigate the preferred plant part for insect feeding. Eighteen common bean cultivars were evaluated in the winter season, and 19 cultivars were assessed in the rainy and dry seasons, under field conditions in the municipality of Jaboticabal, state of São Paulo, Brazil. Infestation of C. phaseoli nymphs in the upper and lower parts of the beans plants was recorded at weekly intervals from 25 days after plant emergence (DAE) to 60 DAE. In the winter season, the cultivars 'IAC Galante,' 'IAC Centauro,' 'IAC Carioca Eté,' and 'IAC Formoso' had significantly lower number of thrips than the cultivar 'IAC Diplomata.' In the rainy season, the cultivars 'IAC Harmonia' and 'IPR Siriri' had the lowest thrips infestation, differing from the cultivars 'BRS Pontal' and 'IAC Una.' The bean cultivars were equally susceptible to C. phaseoli in the dry season. The results suggest that C. phaseoli nymphs prefer to infest leaves of the lower part of bean plants, like most generalist herbivorous insects. In the winter and dry seasons, the highest thrips infestation was observed at 60 DAE, while in the rainy season, it was recorded from 32 to 46 DAE. Overall, C. phaseoli infestation on bean cultivars was not influenced by either temperature, relative humidity, or rainfall.

Physico-chemical properties of starches isolated from potato cultivars grown in soils with different phosphorus availability

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Influence of Mg on the structural and optical properties of LiNbO3 thin films grown by polymeric precursor method

A polymeric precursor solution was used to deposit pure and Mg doped LiNbO3 thin films on sapphire substrates by spin-coating. The effects of magnesium addition on crystallinity, morphology and optical properties of the annealed films were investigated. X-ray diffraction patterns indicate the oriented growth of the films. Phi-scan diffraction evidenced the epitaxial growth with two in-plane variants. AFM studies show that the films are very homogeneous, dense and present smooth surfaces. The refractive index and optical losses obtained by the prism coupling method were influenced by the magnesium addition.

Al-doping effect on the surface morphology of zno films grown by reactive rf magnetron sputtering

Zinc oxide (ZnO) and aluminum-doped zinc oxide (ZnO:Al) thin films were deposited onto glass and silicon substrates by RF magnetron sputtering using a zinc-aluminum target. Both films were deposited at a growth rate of 12.5 nm/min to a thickness of around 750 nm. In the visible region, the films exhibit optical transmittances which are greater than 80%. The optical energy gap of ZnO films increased from 3.28 eV to 3.36 eV upon doping with Al. This increase is related to the increase in carrier density from 5.9 × 1018 cm−3 to 2.6 × 1019 cm−3 . The RMS surface roughness of ZnO films grown on glass increased from 14 to 28 nm even with only 0.9% at Al content. XRD analysis revealed that the ZnO films are polycrystalline with preferential growth parallel to the (002) plane, which corresponds to the wurtzite structure of ZnO.

Investigação das propriedades ópticas, morfológicas e elétricas da heterojunção SnO2: Ce3+/ GaAs

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)