Field method for dielectric concentrator design

Field method for dielectric concentrator design

Single - and double energy swift and slow heavy ion irradiated optical waveguides in Er: Tungstene-Tellurite glass and BGO for telecom applications

The fabrication of broadband amplifiers in wavelength division multiplexing (WDM) around 1.55 m, as they exhibit large stimulated cross sections and broad emission bandwidth. Bi4Ge3O12 (eultine type BGO) - well known scintillator material, also a rare-earth host material, photorefractive waveguides produced in it only using light ions in the past. Recently: MeV N+ ions and swift O5+ and C5+ ions, too*. Bi12GeO20 (sillenite type BGO) - high photoconductivity and photorefractive sensitivity in the visible and NIR good candidate for real-time holography and optical phase conjugation, photorefractive waveguides produced in it only using light ions. No previous attempts of ion beam fabrication of waveguides in it.

Surface Impedance Characterization for UTD Based Solution with IBC for Surface Fields on a Dielectric-Coated PEC Circular Cylinder

A novel formulation for the surface impedance characterization is introduced for the canonical problem of surface fields on a perfect electric conductor (PEC) circular cylinder with a dielectric coating due to a electric current source using the Uniform Theory of Diffraction (UTD) with an Impedance Boundary Condition (IBC). The approach is based on a TE/TM assumption of the surface fields from the original problem. Where this surface impedance fails, an optimization is performed to minimize the error in the SD Green?s function between the original problem and the equivalent one with the IBC. This new approach requires small changes in the available UTD based solution with IBC to include the geodesic ray angle and length dependence in the surface impedance formulas. This asymptotic method, accurate for large separations between source and observer points, in combination with spectral domain (SD) Green?s functions for multidielectric coatings leads to a new hybrid SD-UTD with IBC to calculate mutual coupling among microstrip patches on a multilayer dielectric-coated PEC circular cylinder. Results are compared with the eigenfunction solution in SD, where a very good agreement is met.

Surface Impedance Characterization for Mutual Coupling Calculation of Patches on a Dielectric-Coated PEC Circular Cylinder

A novel formulation for the surface impedance characterization is introduced for the canonical problem of surface fields on a perfect electric conductor (PEC) circular cylinder with a dielectric coating due to a electric current source using the Uniform Theory of Diffraction (UTD) with an Impedance Boundary Condition (IBC). The approach is based on a TE/TM assumption of the surface fields from the original problem. Where this surface impedance fails, an optimization is performed to minimize the error in the SD Green?s function between the original problem and the equivalent one with the IBC. This asymptotic method, accurate for large separations between source and observer points, in combination with spectral domain (SD) Green?s functions for multidielectric coatings leads to a new hybrid SD-UTD with IBC to calculate mutual coupling among microstrip patches on a multilayer dielectric-coated PEC circular cylinder. Results are compared with the eigenfunction solution in SD, where a very good agreement is met.

Dielectric behaviour of Hf-doped CaCu3Ti4O12 ceramics obtained by conventional synthesis and reactive sintering

CaCu3(Ti4xHfx)O12 ceramics (JC = 0.04, 0.1 and 0.2) were prepared by conventional synthesis (CS) and through reactive sintering (RS), in which synthesis and sintering of the material take place in one single step. The microstructure and the dielectric properties of Hf-doped CCTO (CCTOHf) have been studied by XRD, FE-SEM, AFM, Raman and impedance spectroscopy (IS) in order to correlate the structure, microstructure and the electrical properties. Samples prepared by reactive sintering show slightly higher dielectric constant than those prepared by conventional synthesis in the same way than the pure CCTO. Dielectric constant and dielectric losses decrease slightly increasing Hf content. For CCTOHf ceramics with x> 0.04 for CS and x> 0.1 for RS, a secondary phase HfTi04 appears. As expected, the reactive sintering processing method allows a higher incorporation of Hf in the CCTO lattice than the conventional synthesis one.

Super-resolution properties of the Spherical Geodesic Waveguides using the perfect drain

Perfect drain for the Maxwell Fish Eye (MFE) is a nonmagnetic dissipative region placed in the focal point to absorb all the incident radiation without reflection or scattering. The perfect drain was recently designed as a material with complex permittivity ? that depends on frequency. However, this material is only a theoretical material, so it can not be used in practical devices. Recently, the perfect drain has been claimed as necessary to achieve super-resolution [Leonhard 2009, New J. Phys. 11 093040], which has increased the interest for practical perfect drains suitable for manufacturing. Here, we analyze the superresolution properties of a device equivalent to the MFE, known as Spherical Geodesic Waveguide (SGW), loaded with the perfect drain. In the SGW the source and drain are implemented with coaxial probes. The perfect drain is realized using a circuit (made of a resistance and a capacitor) connected to the drain coaxial probes. Superresolution analysis for this device is done in Comsol Multiphysics. The results of simulations predict the superresolution up to ? /3000 and optimum power transmission from the source to the drain.

Electrooptic effect in cholesteric blue phases with small positive dielectric anisotropy

An electrooptic effect in the blue phase of the cholesteric mixture S811-and the nematic mixture N5 is reported. To demonstrate this effect ac voltages (ƒ = 1000 Hz) between 0 and 150 νwere applied. Wavelength shifts of 70 nm were obtained.

Surface impedance for scattered field on a dielectric-coated circular cylinder

In the scattering analysis of a circular cylindrical structure, the impedance boundary condition (IBC) can approximate and simplify the perfect electric conductor (PEC) boundary condition. The circular cylinder problem can be solved with modal methods but they require a large number of terms when the cylinder radius is large in terms of the wave length. The uniform theory of diffraction (UTD) [1] is commonly used to overcome this issue. The two-dimensional problem of scattering on a circular cylinder covered by a dielectric layer has been analyzed by [2]–[5], but their solutions either do not consider oblique incidence, fail on the transition region or use a constant surface impedance.

Surface impedance for electromagnetic fields over a dielectric-coated circular cylinder

For small or medium size conformal array antennas in terms of the wave length, modal solutions in spectral domain for mutual coupling analysis are convenient for canonical shapes such as circular cylinder [1] or sphere [2], but as the antenna dimensions increase a large number of terms are necessary. For large structures the uniform theory of diffraction (UTD) is commonly used to solve this problem for canonical and arbitrarily convex shaped perfect electric conductor (PEC) surfaces [3]. A UTD solution for mutual coupling on an impedance cylinder has been introduced in [4], [5] but using a constant surface impedance.

Propagation losses by tunnelling in barrier optical waveguides

An analytical model is proposed in order to estimate the optical propagation losses due to tunnelling in barrier waveguides. The results are validated by means of a beam propagation method (BPM) simulations for different waveguides conditions.

Durability of dielectric fluids for concentrating photovoltaic systems

Several dielectric fluids that might be used for immersing optics are analyzed in this paper. Their transmittances, both before and after an accelerated exposure to ultraviolet (UV) radiation equivalent to several years under real sun, are presented. In addition, the photocurrent losses caused by the decrease in transmittance experienced by each fluid are estimated for current III?V multijunction (MJ) solar cells. The most stable fluids were found to be paraffin and silicone oils whose transmittances remained practically unaltered after a UV dosage equivalent to 3 years of AM1.5D radiation.

Contribution to the Analysis of Waveguides and Design of Passive Components at Millimeter and Submillimeter-Waves

Esta tesis está dedicada al análisis de las guías de onda y el diseño de los componentes pasivos con énfasis en aplicaciones de alta frecuencia. En primer lugar, se lleva a cabo el análisis de las guías de onda con conductores metálicos no ideales, con el objetivo de establecer el límite superior en frecuencia de las aproximaciones habitualmente utilizadas en microondas para el cálculo de las pérdidas óhmicas. Posteriormente, se presenta el diseño de diferentes componentes pasivos de guía de ondas: filtros, transductores de modos ortogonales (OMT), polarizadores, duplexores y alimentadores de antena, funcionando en frecuencias desde 10 a 750 GHz. Para el correcto diseño de componentes a altas frecuencias se requiere, en primer lugar, comprender los nuevos procesos de fabricación y después adecuar los diversos componentes para cumplir especificaciones eléctricas y geométricas simultáneamente. Para esto, se presentan modificaciones y nuevas geometrías de guiado de ondas para diferentes aplicaciones y procesos tecnológicos. Además se discuten sus ventajas sobre las soluciones ya existentes. Además, el trabajo presentado en esta tesis se ocupa del desarrollo completo de dispositivos: diseño, fabricación y caracterización de los componentes ya mencionados. Por último, algunos de los dispositivos desarrollados han sido diseñados para ser integrados en diferentes sistemas. De esta forma, se mejoran las prestaciones y capacidades de dichos sistemas.

Temperature performance of AlGaN/GaN MOS-HEMTs on Si substrates using Gd2O3 as gate dielectric

GaN based high electron mobility transistors have draw great attention due to its potential in high temperature, high power and high frequency applications [1, 2]. However, significant gate leakage current is still one of the issues which need to be solved to improve the performance and reliability of the devices [3]. Several research groups have contributed to solve this problem by using metal–oxide–semiconductor HEMTs (MOSHEMTs), with a thin dielectric layer, such as SiO2 [4], Al2O3 [5], HfO2 [6] and Gd2O3 [7] between the gate and the barrier layer on AlGaN/GaN heterostructures. Gd2O3 has shown low interfacial density of states(Dit) with GaN and a high dielectric constant and low electrical leakage currents [8], thus is considered as a promising candidate for the gate dielectrics on GaN. MOS-HEMTs using Gd2O3 grown by electron-beam heating [7] or molecular beam epitaxy (MBE) [8] on GaN or AlGan/GaN structure have been investigated, but further research is still needed in Gd2O3 based AlGaN/GaN MOSHEMTs.

Polarization analysis in anisotropous nonlinear dielectric media

Análisis de la polarización en medios dieléctricos anisótropos no lineales centrosimétricos y no centrosimétricos.

Estudo e aplicação de guias de ondas integrados ao substrato em frequências de micro-ondas.

Esse trabalho de pesquisa apresenta um estudo detalhado sobre guias de ondas integrados ao substrato (SIW) operando em frequências de micro-ondas com base na teoria de guias de ondas retangulares (RWG). O estudo sobre guias SIW associa equações apresentadas na literatura e utiliza simulações eletromagnéticas para desenvolver um procedimento de projeto bem definido. É considerada a integração entre guias SIW e linhas de transmissão de microfita, projetando-se transições entre essas duas estruturas com o propósito de prover casamento de impedância e de viabilizar a caracterização em frequências de micro-ondas. São apresentadas considerações sobre processos de fabricação de circuitos SIW em substratos constituídos por laminados de alta frequência. Uma vez estabelecidos os procedimentos de fabricação e os critérios de projeto, a tecnologia SIW é aplicada ao projeto de três guias de ondas SIW nas bandas S e X, que foram fabricados empregando laminados de alta-frequência. Foram projetados dois filtros SIW passa-faixa empregando cavidades ressonantes e postes metálicos indutivos. Os dois filtros operam na frequência central de 10,61 GHz, sendo que um deles tem banda de passagem de 7,5%e é de 3ª ordem e o outro filtro tem banda de passagem de 15%, sendo de 5ª ordem. Foram realizadas comparações entre o desempenho simulado e experimental das estruturas SIW projetadas. Os resultados de simulações eletromagnéticas e experimentais demonstraram boa concordância. Os projetos em tecnologia SIW apresentados neste trabalho de pesquisa possuem perdas de retorno melhores que 10 dB na banda de operação e perdas por inserção de 1,0 dB a 1,5 dB. É apresentada a análise da sensibilidade do desempenho dos guias de ondas e filtros SIW projetados a desvios dimensionais típicos do processo de fabricação por microfresagem mecânica. Com os resultados experimentais e de simulação foi possível validar os procedimentos de projeto e de fabricação de circuitos SIW operando em frequências de micro-ondas.