野菰叶粉代替粮食原料饲养草食性鱼效益评价

野菰是一种优质饲料植物,本试验评价用10％、20％和30％野菰叶粉代替鱼用饲料中的米糠、麦麸饲养草鱼、团头鲂的效益。加入野菰叶粉,饲料中粗脂肪含量略为降低,但粗蛋白含量不变。含不同野菰叶粉饲料饲养的鱼的生长速度和成活率没有明显不同,其饲料系数及每kg鱼的饲料价,以加20％野菰叶粉的饲料为优,而加10％和30％野菰叶粉饲料的饲料系数及每kg鱼饲料价相似。而且,随着在饲料中野菰叶粉用量适当增加,米糠、麸皮可节省44％—73.6％。用3种含野菰叶粉颗粒饲料在网箱中经126天饲养,每亩平均鱼产量达到了15000k

新型浮选剂MPA对鱼类毒性效应的研究

MPA是一种新型浮选剂,主要由29种醇类化合物组成。测得它的96h的LC_(50)值:草鱼胚胎为100—200mg/L;草鱼苗为75.86mg/L;草鱼种为122.77mg/L。引起草鱼胚胎弯体畸形的EC_(50)值为48.98mg/L。弯体不严重的鱼苗在清水中饲养,能恢复成正常的鱼苗。对鱼苗生长没有影响的浓度是6.65mg/L。浓度为100mg/L的MPA在水环境中一周能去除一半,20天后未检出,在该浓度内放入的草鱼种,对其生长没有明显的影响。

真(鱼岁)(Phoxinus phoxinus(L.))的能量收支各组分与摄食量、体重及温度的关系

在不同的摄食水平(饥饿—最大量)及温度(5—15℃)下,对1—5g的真(鱼岁)的摄食量、排粪量、排泄量、代谢量,生长量及生化组成作了测定。真(鱼岁)的最大摄食量随体重及温度增加而增加。食物能量平均有6.5％损失于粪便中,5.1％损失于排泄物中。摄食代谢随摄食量增加而增加。在同一温度下,特定生长率与摄食量的关系是一减速增长曲线。当摄食不受限制时,生长率随温度增加而增加;当摄食受限制时,生长率随温度增加而下降。鱼体的干物质含量及能量含量随摄食量增加而增加。

石化废水盐分对凤眼莲生长及净化效率的影响

当废水电导率(20℃)在5000μS/cm以上时,凤眼莲几天内中毒死亡。当电导率在2300μs/cm以上时,凤眼莲生长率,叶绿素含量及a/b比率下降,细胞膜透性增加。凤眼莲适宜的生长范围是电导率1700μS/cm以下。废水中有毒组分使盐分的毒性有所增加,但经活性炭过滤或让其经一段时间自然降解后,毒性明显降低。盐分还使凤眼莲净化效率降低。试验污水中COD、油、氨氮、酚等污染组分的净化效率随污水处理方式不同而有所不同,但在每一处理组中,都是盐分含量居中的试验组的净化效率最高。在本试验条件下,凤眼莲生长越旺盛,

鲃巴亚科鱼类一新种(鲤形目:鲤科)

<正> 宽头四须鲃,新种Barbodes laticeps sp.nov.(图1) 根据模式标本8尾描记。 背鳍条3,7—8,臀鳍条3,5;胸鳍条1,12—13,腹鳍条1,8。鳃耙8—14。下咽齿3行,2.3.5—5.3.2。侧线鳞38×[6/(5—V)]×42;背鳍前鳞12—17;围尾柄鳞14—16。脊椎骨4+34—36(X光检视8尾)。

Benthic algae of the Gangqu River, Shangrila, China

We surveyed the benthic algae at 32 sites in the Gangqu River system during May 2005. Among the 162 different taxa observed, 88.8% were diatoms. Achnanthes linearis and Achnanthes lanceolata var. elliptica were the dominant species, comprising 17.1% and 14.3% of the total relative abundance, respectively.

Nonylphenol, bisphenol-A and DDTs in Lake Donghu, China

A preliminary survey was carried out in April 2003 to estimate the levels of nonylphenol (NP), bisphenol-A (BPA) and residual DDTs in Lake Donghu. After then, the sediments of some areas of the lake were moved out for clearing the lake by the local government. Therefore, the variance of NP and BPA after the clearance of sediment in the surface water was determined from December 2003 to May 2004. Sediments, surface water and fish were collected from four sub-lake areas and the analytes were qualified by GC/MS in SIM mode after concentration onto an Oasis solid phase extraction cartridge. NP and BPA values ranged between 5.46-119.10 and 0.9913.42 mg/kg dw, respectively, in sediments, 75.2-179.6 and 15.1-62.5 mu g/L in surface water. Meanwhile, the bioaccumulation factors (BCFs) of NP and BPA were calculated in fish livers. Plasma vitellogenin (VTG), a sensitive biomarker showing oestrogenicity was detected in the captured male Wuchang bream (Megalobrama amblycephala Yih) and common carp (Cyprinus carpio). After sediment clearance, the concentrations of NP and BPA decreased to 0.65-25.04 and 0.04-21.32 mu g/L. The results indicate the presence of high-dose xenoestrogenic NP and BPA, probably major contributors which associate with VTG induction in Lake Donghu male fish.

Root zone microbial populations, urease activities, and purification efficiency for a constructed wetland

In order to investigate the effects of microorganisms and their urease activities in macrophytic root zones on pollutant removal, four small-scale plots (SSPs) of vertical/reverse-vertical flow wetlands were set up to determine: a) the relationship between the abundance of microorganisms in the root zones and water purification efficiency; and b) the relationship between urease activities in the root zones and pollutant removal in a constructed wetland system. Total numbers of the microbial population (bacteria, fungi, and actinomyces) along with urease activities in the macrophytic root zones were determined. In addition, the relationships between microbial populations and urease activities as well as the wastewater purification efficiencies of total phosphorus (TP), total Kjeldahl nitrogen (TKN), biochemical oxygen demand in 5 days (BOD5), and chemical oxygen demand (COD) were also analyzed. The results showed that there was a highly significant positive correlation (r = 0.9772, P < 0.01) between the number of bacteria in the root zones and BOD5 removal efficiency and a significant negative correlation (r = -0.9092, P < 0.05) between the number of fungi and the removal efficiency of TKN. Meanwhile, there was a significant positive correlation (r = 0.8830, P < 0.05) between urease activities in the root zones and the removal efficiency of TKN. Thus, during wastewater treatment in a constructed wetland system, microorganism and urease activities in the root zones were very important factors.

Residual plastids of bleached mutants of Euglena gracilis and their effects on the expression of nucleus-encoded genes

Bleached mutants of Euglena gracilis were obtained by treatment with ofloxacin (Ofl) and streptomycin (Sm) respectively. As shown by electron microscopy, the residual plastids contain prothylakoids in an Ofl mutant, and the highly developed and tightly stacked membranous structure found in cells of two Sm, mutants. Nine genes of the plastid genome were examined with PCR, showing that ribosomal protein genes and most other plastid genes were lost in all but one Sm mutant. Using differential display and RT-PCR, it was shown that chloroplast degeneration could cause changes in transcription of certain nucleus-encoded genes during heterotrophic growth in darkness.

Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET

The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen implantation doses (8 x 10(15), 2 x 10(16) and 1 x 10(17) cm(-2)) for partially depleted SOI PMOSFET. The experimental results reveal the trend of negative shift of the threshold voltages of the studied transistors with the increase of nitrogen implantation dose before irradiation. After the irradiation with a total dose of 5 x 10(5) rad(Si) under a positive gate voltage of 2V, the threshold voltage shift of the transistors corresponding to the nitrogen implantation dose 8 x 10(15) cm(-2) is smaller than that of the transistors without implantation. However, when the implantation dose reaches 2 x 10(16) and 1 x 10(17) cm(-2), for the majority of the tested transistors, their top gate oxide was badly damaged due to irradiation. In addition, the radiation also causes damage to the body-drain junctions of the transistors with the gate oxide damaged. All the results can be interpreted by tracing back to the nitrogen implantation damage to the crystal lattices in the top silicon.

Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC

High-dose ion implantation of phosphorus into 4H-SiC (0001) has been investigated with three different ion fluxes ranging from 1.0 to 4.0 x 10(12) P(+)cm(-2.)s(-1) and keeping the implantation dose constant at 2.0 x 10(15) P(+)cm(-2). The implantations are performed at room temperature and subsequently annealed at 1500 degrees C. Photoluminescence and Raman scattering are employed to investigate the implantation-induced damages and the residual defects after annealing. The electrical properties of the implanted layer are evaluated by Hall effect measurements on the sample with a van der Pauw configuration. Based on these results, it is revealed that the damages and defects in implanted layers can be greatly reduced by decreasing the ion flux. Considering room temperature implantation and a relatively low annealing temperature of 1500 degrees C, a reasonably low sheet resistance of 106 Omega/square is obtained at ion flux of 1.0 x 10(12) P(+)cm(-2.)s(-1) with a donor concentration of 4.4 x 10(19)cm(-3).

High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers

In this paper, we reported on the fabrication of 980 nm InGaAs/InGaAsP strained quantum-well (QW) lasers with broad waveguide. The laser structure was grown by low-pressure metalorganic chemical vapor deposition on a n(+)- GaAs substrate. For 3 mu m stripe ridge waveguide lasers, the threshold current is 30 mA and the maximum output power and the output power operating in fundamental mode are 350 mW and 200 mW, respectively. The output power from the single mode fiber is up to 100 mW, the coupling efficiency is 50%. We also fabricated 100 mu m broad stripe coated lasers with cavity length of 800 mu m, a threshold current density of 170 A/cm(2), a high slope efficiency of 1.03 W/A and a far-field pattern of 40 x 6 degrees are obtained. The maximum output power of 3.5 W is also obtained for 100 mu m wide coated lasers. (C) 2000 Elsevier Science B.V. All rights reserved.

Experimental study on tunable external cavity photodetectors

In this paper, an experiment on tunable resonant cavity enhanced (RCE) photodetector with external cavity is reported. It is the first time to realize a tunable RCE photodetector in China. A tuning range about 10 nm has been obtained and further extension is expected. Corresponding theoretical analysis and discussions are presented. (C) 2000 Elsevier Science B.V. All rights reserved.

Mechanism on exciton-mediated energy transfer in erbium-doped silicon

Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.

Characteristics of circular waveguide photodetectors using SiGe/Si multiple quantum wells

We report on the fabrication of circular waveguide photodetectors with a response near 1.3 mu m wavelength using SiGe/Si multiple quantum wells. The quantum efficiency of the circular waveguide photodetector is improved when compared with that of the rib waveguide photodetector in the same wavelength at 1.3 mu m The frequency response of the photodetectors is simulated. The emciency-bandwidth product of the circular waveguide photodetectors is improved correspondingly. (C) 2000 Published by Elsevier Science B.V. All rights reserved.