Rendiconto dell'adunanza generale dei soci del pio Istituto di patronato pei carcerati e liberati dal carcere della provincia di Milano tenutasi il 29 maggio 1864.

University of Illinois bookplate: "From the library of Conte Antonio Cavagna Sangiuliani di Gualdana Lazelada di Bereguardo purchased 1921".

Rendiconto dell'adunanza generale dei soci del pio Istituto di patronato pei carcerati e liberati dal carcere della provincia di Milano tenutasi il 17 maggio 1863.

University of Illinois bookplate: "From the library of Conte Antonio Cavagna Sangiuliani di Gualdana Lazelada di Bereguardo purchased 1921".

Rendiconto della quinta adunanza generale degli ascritti al Pio Istituto del Patronato pei carcerati e liberati dal carcere che si teneva il 7 maggio 1852.

University of Illinois bookplate: "From the library of Conte Antonio Cavagna Sangiuliani di Gualdana Lazelada di Bereguardo purchased 1921".

Rendiconto della adunanza generale dei soci dei pio istituto di patronato pei carcerati e liberati dal carcere della provincia di Milano tenutasi il 14 maggio 1857.

University of Illinois bookplate: "From the library of Conte Antonio Cavagna Sangiuliani di Gualdana Lazelada di Bereguardo purchased 1921".

Rendiconto dell'adunanza generale dei soci del Pio Istituto di Patronato pei carcerati e liberati dal carcere dell provincia di Milano, tenutasi il 21 novembre 1861.

University of Illinois bookplate: "From the library of Conte Antonio Cavagna Sangiuliani di Gualdana Lazelada di Bereguardo purchased 1921".

Rendiconto dell'adunanza generale dei soci del Pio Istituto di Patronato per carcerati e liberati dal carcere della provincia di Milano, tenutasi il 16 maggio 1858.

University of Illinois bookplate: "From the library of Conte Antonio Cavagna Sangiuliani di Gualdana Lazelada di Bereguardo purchased 1921".

Dynamic annealing in III-nitrides under ion bombardment

We study the evolution of structural defects in AlxGa1-xN films (with x=0.0-0.6) bombarded with kilo-electron-volt heavy ions at 77 and 300 K. We use a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy. Results show that an increase in Al content not only strongly enhances dynamic annealing processes but can also change the main features of the amorphization behavior. In particular, the damage buildup behavior at 300 K is essentially similar for all the AlGaN films studied. Ion-beam-produced disorder at 300 K accumulates preferentially in the crystal bulk region up to a certain saturation level (similar to50%-60% relative disorder). Bombardment at 300 K above a critical fluence results in a rapid increase in damage from the saturation level up to complete disordering, with a buried amorphous layer nucleating in the crystal bulk. However, at 77 K, the saturation effect of lattice disorder in the bulk occurs only for xgreater than or similar to0.1. Based on the analysis of these results for AlGaN and previously reported data for InGaN, we discuss physical mechanisms of the susceptibility of group-III nitrides to ion-beam-induced disordering and to the crystalline-to-amorphous phase transition. (C) 2004 American Institute of Physics.

Lattice damage produced in GaN by swift heavy ions

Wurtzite GaN epilayers bombarded at 300 K with 200 MeV Au-197(16+) ions are studied by a combination of transmission electron microscopy (TEM) and Rutherford backscattering/channeling spectrometry (RBS/C). Results reveal the formation of near-continuous tracks propagating throughout the entire similar to1.5-mum-thick GaN film. These tracks, similar to100 Angstrom in diameter, exhibit a large degree of structural disordering but do not appear to be amorphous. Throughout the bombarded epilayer, high-resolution TEM reveals planar defects which are parallel to the basal plane of the GaN film. The gross level of lattice disorder, as measured by RBS/C, gradually increases with increasing ion fluence up to similar to10(13) cm(-2). For larger fluences, delamination of the nitride film from the sapphire substrate occurs. Based on these results, physical mechanisms of the formation of lattice disorder in GaN in such a high electronic stopping power regime are discussed. (C) 2004 American Institute of Physics.

Ion beam modification and analysis of metal/polymer bi-layer thin films

A set of varying-thickness Au-films were thermally evaporated onto poly(styrene-co-acrylonitrile) thin film surfaces. The Au/PSA bi-layer targets were then implanted with 50 keV N+ ions to a fluence of 1 × 1016 ions/cm2 to promote metal-to-polymer adhesion and to enhance their mechanical and electrical performance. Electrical conductivity measurements of the implanted Au/PSA thin films showed a sharp percolation behavior versus the pre-implant Au-film thickness with a percolation threshold near the nominal thickness of 44 Å. The electrical conductivity results are discussed along with the film microstructure and the elemental diffusion/mixing within the Au/PSA interface obtained by scanning electron microscopy (SEM) and ion beam analysis techniques (RBS and ERD).

Sémantique et diachronie du système verbal français

Le système verbal du français contemporain résulte d’une évolution séculaire et l’examen diachronique des valeurs de chacune des formes contribue à la compréhension de la sémantique verbale contemporaine. Parallèlement, l’étude diachronique du système verbal français ne peut se dispenser d’examiner la répartition des valeurs sémantiques sur les formes (avec la diversité d’interprétations contextuelles qu’elles engendrent) au cours de leur évolution. Toutefois, bien que complémentaires, sémantique et diachronie sont rarement conjointes dans la recherche. Par sa conjonction entre études sémantiques et diachroniques, ce volume présente une meilleure idée des tendances qui caractérisent l’évolution des formes verbales du français, et de l’impact que l’observation de ces tendances peut avoir sur notre compréhension de la sémantique de ces formes en synchronie.

Size-dependent radiation tolerance in ion irradiated TiN/AlN nanolayer films

Interface effects on ion-irradiation tolerance properties are investigated in nanolayered TiN/AlN films with individual layer thickness varied from 5 nm to 50 nm, prepared by pulsed laser deposition. Evolution of the microstructure and hardness of the multilayer films are examined on the specimens before and after He ion-implantation to a fluence of 4 × 10 m at 50 keV. The suppression of amorphization in AlN layers and the reduction of radiation-induced softening are observed in all nanolayer films. A clear size-dependent radiation tolerance characteristic is observed in the nanolayer films, i.e., the samples with the optimum layer thickness from 10 nm to 20 nm show the best ion irradiation tolerance properties, and a critical layer thickness of more than 5 nm is necessary to prevent severe intermixing. This study suggests that both the interface characteristics and the critical length scale (layer thickness) contribute to the reduction of the radiation-induced damages in nitride-based ceramic materials. © 2013 Elsevier B.V. All rights reserved.

High-frequency conductivity of optically excited charge carriers in hydrogenated nanocrystalline silicon investigated by spectroscopic femtosecond pump-probe reflectivity measurements

We report an investigation into the high-frequency conductivity of optically excited charge carriers far from equilibrium with the lattice. The investigated samples consist of hydrogenated nanocrystalline silicon films grown on a thin film of silicon oxide on top of a silicon substrate. For the investigation, we used an optical femtosecond pump-probe setup to measure the reflectance change of a probe beam. The pump beam ranged between 580 and 820nm, whereas the probe wavelength spanned 770 to 810nm. The pump fluence was fixed at 0.6mJ/cm2. We show that at a fixed delay time of 300fs, the conductivity of the excited electron-hole plasma is described well by a classical conductivity model of a hot charge carrier gas found at Maxwell-Boltzmann distribution, while Fermi-Dirac statics is not suitable. This is corroborated by values retrieved from pump-probe reflectance measurements of the conductivity and its dependence on the excitation wavelength and carrier temperature. The conductivity decreases monotonically as a function of the excitation wavelength, as expected for a nondegenerate charge carrier gas.

Decreased efficiency of trypsinization of cells following photodynamic therapy:evaluation of a role for tissue transglutaminase

Identifying the cellular responses to photodynamic therapy (PDT) is important if the mechanisms of cellular damage are to be fully understood. The relationship between sensitizer, fluence rate and the removal of cells by trypsinization was studied using the RIF-1 cell line. Following treatment of RIF-1 cells with pyridinium zinc (II) phthalocyanine (PPC), or polyhaematoporphyrin at 10 mW cm−2 (3 J cm−2), there was a significant number of cells that were not removed by trypsin incubation compared to controls. Decreasing the fluence rate from 10 to 2.5 mW cm−2 resulted in a two-fold increase in the number of cells attached to the substratum when PPC used as sensitizer; however, with 5,10,15,20 meso-tetra(hydroxyphenyl) chlorin (m-THPC) there was no resistance to trypsinization following treatment at either fluence rate. The results indicate that resistance of cells to trypsinization following PDT is likely to be both sensitizer and fluence rate dependent. Increased activity of the enzyme tissue-transglutaminase (tTGase) was observed following PPC-PDT, but not following m-THPC-PDT. Similar results were obtained using HT29 human colonic carcinoma and ECV304 human umbilical vein endothelial cell lines. Hamster fibrosarcoma cell (Met B) clones transfected with human tTGase also exhibited resistance to trypsinization following PPC-mediated photosensitization; however, a similar degree of resistance was observed in PDT-treated control Met B cells suggesting that tTGase activity alone was not involved in this process.

Canopy dynamics and light climates in a tropical moist deciduous forest in India

ABSTRACT. The canopy dynamics and light climates within a 20 by 60 m quadrat were studied in a disturbed moist deciduous forest near Bombay, India. A map was drawn of individual trees within the quadrat, the taxa were identified, and their phenology was followed from November 1984 to July 1985. The quadrat contained 14 species, the most common being Tectona grandis, Terminalia tomentosa, Butea monosperma, Mitragyne parviflora and Albizia procera. Some individuals were in leaf at all times, more so at the moister east end of the quadrat. In Novem- ber at the end of the rainy season, light measurements documented percentages of total daily photosynthetic photon fluence (PPF) at 10.0% of full sunlight; 44% of this flux was due to sun- flecks whose duration was approximately 17% of the daytime hours. Values for six sites were similar to mid-day measurements along a 40 m transect, and consistent with the 94% canopy cover of the sites, photographed with a fish-eye lens. The March dry season measurements re- vealed a more intense radiation environment (54% of solar PPF), and 59% of the photosyn- thetic photon flux density at mid-day along the transect. Canopy openings were increased to a mean of 59.4%. Light in the understorey in November was spectrally altered, with typical R:FR ratios of 0.30, compared to March values identical to those of sunlight, at 1.10.