Fin-Enabled-Area-Scaled Tunnel FET

While keeping the technological evolution and commercialization of FinFET technology in mind, this paper discloses a novel concept that enables area-scaled or vertical tunneling in Fin-based technologies. The concept provides a roadmap for beyond FinFET technologies, while enjoying the advantages of FinFET-like structure without demanding technological abruptness from the existing FinFET technology nodes to beyond FinFET nodes. The proposed device at 10-nm gate length, when compared with the conventional vertical tunneling FET or planar area-scaled device, offers 100% improvement in the ON-current, 15x reduction in the OFF-current, 3x increase in the transconductance, 30% improvement in the output resistance, 55% improvement in the unity gain frequency, and more importantly 6x reduction in the footprint area for a given drive capability. Furthermore, the proposed device brings the average and minimum subthreshold slope down to 40 and 11 mV/decade at 10-nm gate length. This gives a path for beyond FinFET system-on-chip applications, while enjoying the analog, digital, and RF performance improvements.

Cadmium Sulfide Nanocrystal Sensitized Vertically Aligned Titanium Dioxide Rods for Large Area Image Sensors on 3-D Substrates

We discuss here a semiconductors assembly comprising of titanium dioxide (TiO2) rods sensitized by cadmium sulfide (CdS) nanocrystals for potential applications in large area electronics on three dimensional (3-D) substrates. Vertically aligned TiO2 rods are grown on a substrate using a 150 degrees C process flow and then sensitized with CdS by SILAR method at room temperature. This structure forms an effective photoconductor as the photo-generated electrons are rapidly removed from the CdS via the TiO2 thereby permitting a hole rich CdS. Current-voltage characteristics are measured and models illustrate space charge limited photo-current as the mechanism of charge transport at moderate voltage bias. The stable assembly and high speed are achieved. The frequency response with a loading of 10 pF and 9 M Omega shows a half power frequency of 100 Hz. (C) 2015 The Electrochemical Society. All rights reserved.

Ultrasonic Guided Wave Sensor Network Optimization for Monitoring Rivet Line

Guided waves using piezo-electric wafer active sensors (PWAS) is one of the useful techniques of damage detection. Sensor network optimization with minimal network hardware footprint and maximal area of coverage remains a challenging problem. PWAS sensors are placed at discrete locations in order to inspect damages in plates and the idea has the potential to be extended to assembled structures. Various actuator-sensor configurations are possible within the network in order to identify and locate damages. In this paper we present a correlation based approach to monitor cracks emanating from rivet line using a simulated guided wave signal whose sensor is operating in pulse echo mode. Discussions regarding the identification of phase change due to reflections from the crack are also discussed in this paper.

No More HF: Teflon-Assisted Ultrafast Removal of Silica to Generate High-Surface-Area Mesostructured Carbon for Enhanced CO2 Capture and Supercapacitor Performance

An innovative technique to obtain high-surface-area mesostructured carbon (2545m(2)g(-1)) with significant microporosity uses Teflon as the silica template removal agent. This method not only shortens synthesis time by combining silica removal and carbonization in a single step, but also assists in ultrafast removal of the template (in 10min) with complete elimination of toxic HF usage. The obtained carbon material (JNC-1) displays excellent CO2 capture ability (ca. 26.2wt% at 0 degrees C under 0.88bar CO2 pressure), which is twice that of CMK-3 obtained by the HF etching method (13.0wt%). JNC-1 demonstrated higher H-2 adsorption capacity (2.8wt%) compared to CMK-3 (1.2wt%) at -196 degrees C under 1.0bar H-2 pressure. The bimodal pore architecture of JNC-1 led to superior supercapacitor performance, with a specific capacitance of 292Fg(-1) and 182Fg(-1) at a drain rate of 1Ag(-1) and 50Ag(-1), respectively, in 1m H2SO4 compared to CMK-3 and activated carbon.

No More HF: Teflon-Assisted Ultrafast Removal of Silica to Generate High-Surface-Area Mesostructured Carbon for Enhanced CO2 Capture and Supercapacitor Performance

An innovative technique to obtain high-surface-area mesostructured carbon (2545m(2)g(-1)) with significant microporosity uses Teflon as the silica template removal agent. This method not only shortens synthesis time by combining silica removal and carbonization in a single step, but also assists in ultrafast removal of the template (in 10min) with complete elimination of toxic HF usage. The obtained carbon material (JNC-1) displays excellent CO2 capture ability (ca. 26.2wt% at 0 degrees C under 0.88bar CO2 pressure), which is twice that of CMK-3 obtained by the HF etching method (13.0wt%). JNC-1 demonstrated higher H-2 adsorption capacity (2.8wt%) compared to CMK-3 (1.2wt%) at -196 degrees C under 1.0bar H-2 pressure. The bimodal pore architecture of JNC-1 led to superior supercapacitor performance, with a specific capacitance of 292Fg(-1) and 182Fg(-1) at a drain rate of 1Ag(-1) and 50Ag(-1), respectively, in 1m H2SO4 compared to CMK-3 and activated carbon.

Effects of 'sinking in' and 'piling up' on estimating the contact area under load in indentation

The phenomena of the 'piling up' and 'sinking-in' of surface profiles in conical indentation in elastic-plastic solids with work hardening are studied using dimensional and finite-element analysis. The degree of sinking in and piling up is shown to depend on the ratio of the initial yield strength Y to Young's modulus E and on the work-hardening exponent n. The widely used procedure proposed by Oliver and Pharr for estimating contact depth is then evaluated systematically. By comparing the contact depth obtained directly from finite-element calculations with that obtained from the initial unloading slope using the Oliver-Pharr procedure, the applicability of the procedure is discussed.

An New Area Function for Sharp indenter Tips in Nanoindentation

A new area function is introduced and applied to a Berkovich tip in order to characterize the contact projected area between an indenter and indented material. The function can be related directly to tip-rounding, thereby having obviously physical meaning. Nanoindentation experiments are performed on a commercial Nano Indenter XPsystem. The other two area functions introduced by Oliver and Pharr and by Thurn and Cook respectively are involved in this paper for comparison. By comparison from experimental results among different area functions, the indenter tip described by the proposed area function here is very close to the experimental indenter.

Carbon transition efficiency and process cost in high-rate, large-area deposition of diamond films by DC arc plasma jet

A new DC plasma torch in which are jet states and deposition parameters can be regulated over a wide range has been built. It showed advantages in producing stable plasma conditions at a small gas flow rate. Plasma jets with and without magnetically rotated arcs could be generated. With straight are jet deposition, diamond films could be formed at a rate of 39 mu m/h on Mo substrates of Phi 25 mm, and the conversion rate of carbon in CH4 to diamond was less than 3%. Under magnetically rotated conditions, diamond films could be deposited uniformly in a range of Phi 40 mm at 30 mu m/h, with a quite low total gas flow rate and high carbon conversion rate of over 11%. Mechanisms of rapid and uniform deposition of diamond films with low gas consumption and high carbon transition efficiency are discussed.

Evolución de la eficiencia reproductiva en la finca piloto San José del municipio de Santo Tomás, Chontales. Area modelo del proyecto de mejoramiento de la productividad ganadera para los productores de pequeña y mediana escala

El presente estudio se realizo con el objetivo de determinar la evolución de la eficiencia reproductiva en la finca piloto San José del municipio de Santo tomas, del departamento de Chontales. Evolución de la Eficiencia Reproductiva en la Finca Piloto San José, en el Municipio de Santo Tomas Chontales. Area modelo del proyecto de Mejoramiento de la Productividad Ganadera para los Productores de Pequeña y Mediana Escala. La finca se sitúa entre las coordenadas 13º28’51’’ latitud norte y 70º77’02’’ longitud este, con altura de 420 msnm, con una precipitación promedio anual de 1600 a 2000 mm, con temperatura media anual de 25º a 27ºC. El presente estudio se evaluaron los diferentes índices reproductivos de la finca piloto San José, haciendo uso de los registros que se levantaron durante la etapa de ejecución del proyecto, realizando monitoreos periódicos como: pesajes de ganado y diagnósticos reproductivos, también se realizaba pesaje de leche y prueba de mastitis, estas actividades se realizan una vez al mes, pero con diferencias de 15 días por actividades. La producción total de leche obtenida en la finca fue de 49.500kg de leche durante un año, cuando el IPP fue de 12 meses. Cuando el IPP llego a los 24 meses la producción de leche fue de 27,000Kg. Se obtuvo que entre menor fueron los IPP y los ingresos de las finca fueron mayores. Cuando se alargaron los dias de ordeño también se alargaron los dias de secado. En el año 2005 el promedio del IPC era de 8.5 meses y en el año 2008 se redujo a 4.7 meses. En el año 2005 el IPP era de 18 meses y para el año 2008 se redujo a 14 meses. Para el invierno del 2005 se tenía promedios de 9 partos en invierno con relación al de verano que fue de 3 partos, luego en el verano del 2008 los partos se redujeron a 4 partos, pero en invierno aumentaron a 15 partos por época. El IPC para el 2005 correspondía a un 22 %, para el año 2008 se logro reducir a un 7.5 %. El IPP en el año 2005 fue del 45.7 % y para el 2008 se redujo a un22.4 %, prácticamente se redujo a un 50 %. En la finca piloto en el 2005 se contaba con 12 animales en ordeño y al año 2008 se incremento su número de animales productivos a 19 animales. La producción promedio por vaca siempre se mantuvo estable entre los 4 y 5 litros de leche por vaca, aumentado solamente la producción total de leche por día.

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.