Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate

Self-ordered porous alumina films on a semi-insulated GaAs substrate were prepared in oxalic acid aqueous solutions by three-step anodization. The I-t curve of anodization process was recorded to observe time effects of anodization. Atomic force microscopy was used to investigate structure and morphology of alumina films. It was revealed that the case of oxalic acid resulted in a self-ordered porous structure, with the pore diameters of 60-70 nm, the pore density of the order of about 10(10) pore cm(-2), and interpore distances of 95-100nm. At the same time the pore size and shape change with the pore widening time. Field-enhanced dissolution model and theory of deformation relaxation combined were brought forward to be the cause of self-ordered pore structure according to I-t curve of anodization and structure characteristics of porous alumina films. (c) 2006 Elsevier Ltd. All rights reserved.

Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique

Radio frequency magnetron sputtering/post-carbonized-reaction technique was adopted to prepare good-quality GaN films on Al2O3(0 0 0 1) substrates. The sputtered Ga2O3 film doped with carbon was used as the precursor for GaN growth. X-ray diffraction (XRD) pattern reveals that the film consists of hexagonal wurtzite GaN. X-ray photoelectron spectroscopy (XPS) shows that no oxygen can be detected. Electrical and room-temperature photoluminescence measurements show that good-quality polycrystalline GaN films were successfully grown on Al2O3(0 0 0 1) substrates. (c) 2005 Elsevier B.V. All rights reserved.

Preparation and characterization of the stable nc-Si/a-Si : H films

High-quality nc-Si/a-Si:H diphasic films with improved stability were prepared by using the plasma-enhanced chemical vapor deposition technology. In comparison with typical amorphous silicon, the diphasic silicon films possess higher photoconductivity (two orders larger than that of the amorphous silicon film) and fairly good photosensitivity(the ratio of the photo-to dark-conductivity is about 10) and higher stability (the degradation of the photoconductivity is less than 10% after 24h long light soaking with 50 mW/cm(2) intensity at room temperature). In addition, the diphasic silicon film has a better light spectra response in the longer wavelength range. The improvement in photoelectronic properties may be attributed to: the existence of the disorder within the amorphous matrix, which breaks the momentum selection rule in the optical transition and, consequently, results in the large light absorption coefficient and high photosensitivity; the improved medium range order and low gap states density. Excess carriers generated in the amorphous matrix tend to recombine in the embedded crystallites, which suppresses nonradiative recombination within the amorphous matrix and reduces the subsequent defect creation.

Preparation of I-2 clusters and their absorption spectra

Samples have been prepared at different temperatures by loading It molecules into the cages of zeolite 5A, and the measurements of the absorption spectra have been carried out for the prepared samples. It is shown that 12 molecular clusters are formed in the cages of zeolite 5A, and it is also found that molecular clusters which are bonded with intermolecular forces have an important feature, namely, the intermolecular distance in molecular clusters can be changed on different preparing conditions and the blue shift of absorption edges can not be as the criterion of forming molecular clusters.

Preparation and AFM characterization of self-ordered porous alumina films on semi-insulated gaas substrate

Self-ordered porous alumina films on a semi-insulated GaAs substrate were prepared in oxalic acid aqueous solutions by three-step anodization. The I-t curve of anodization process was recorded to observe time effects of anodization. Atomic force microscopy was used to investigate structure and morphology of alumina films. It was revealed that the case of oxalic acid resulted in a self-ordered porous structure, with the pore diameters of 60-70 nm, the pore density of the order of about 10(10) pore cm(-2), and interpore distances of 95-100nm. At the same time the pore size and shape change with the pore widening time. Field-enhanced dissolution model and theory of deformation relaxation combined were brought forward to be the cause of self-ordered pore structure according to I-t curve of anodization and structure characteristics of porous alumina films. (c) 2006 Elsevier Ltd. All rights reserved.

MoNi/gamma-Al2O3 Catalyst: Preparation and Catalytic Activity for Acetic Acid Hydrotreating

MoNi/gamma-Al2O3 catalysts were prepared by the impregnation method. The catalyst samples were characterized by XRD and TPR. The effects of Mo promoter content and the catalyst reducing temperature Oil hydrotreatment activity of the catalyst were studied under 200 degrees C and 3 MPa hydrogen pressure using acetic acid as the model compound. The XRD results indicate that the addition of Mo promoter is beneficial to the uniformity of nickel species on the catalyst and decreases the Interaction between nickel species and the support Which results in the decrease the of NiAl2O4 spinel formation. The addition of Mo promoter also decreases the reducing temperature of the catalyst. After the catalyst of 0.06 MoNi/gamma-Al2O3 being reduced Under the atmosphere of H-2/N-2(5/95, V/V), nickel oxide was reduced to Ni-0. The reaction was promoted obviously upon the addition of the MoNi/gamma-Al2O3 catalyst reduced at 600 degrees C. The Mo-modified Ni/gamma-Al2O3 catalyst reduced at 600 degrees C displayed the highest activity during the reaction, the conversion of acetic acid reached the highest point of 33.2%. The products included ethyl acetate and water.

Preparation and luminescence properties of Eu2+ in SiO2 xerogels

Al-doped and B, Al co-doped SiO2 xerogels with Eu2+ ions were prepared only by sol-gel reaction in air without reducing heat-treatment or post-doping. The luminescence characteristics and mechanism of europium doping SiO2 xerogels were studied as a function of the concentration of Al, B, the europium concentration and the host composition. The emission spectra of the Al-doped and B, Al codoped samples all show an efficient emission broad band in the blue violet range. The blue emission of the Al-doped sample was centered at 437 nm, whereas the B, Al co-doped xerogel emission maximum shifted to 423 nm and the intensity became weaker. Concentration quenching effect occurred in both the Al-doped and B, Al co-doped samples, which probably is the result of the transfer of the excitation energy from Eu2+ ions to defects. The highest Eu2+ emission intensity was observed for samples with the Si(OC2H5)(4):C2H5OH:H2O molar ratio of 1:2:4. (c) 2006 Elsevier B.V. All rights reserved.

Preparation and optical property of a novel hydrophobic anti-reflection coating for KDP crystal

A novel inorganic-organic hybrid hydrophobic anti-reflection silica film used for laser crystal was obtained by sol-gel process. The film consisted of silica sols mixed with a small amount of polymethyl methacrylate (PMMA) or polystyrene (PS). The optical transparency, hydrophobic property and surface morphology of the film were characterized by UV-VIS-NIR spectrophotometer; contact angle instrument and Scanning Electron Microscopy (SEM), respectively. The results showed that the anti-reflection coating had good hydrophobility and optical transparency from 400 nm to 1200 nm. The contact angle reached to 130-140 degrees. SEM images indicated the hydrophobic films modified with PMMA or PS had compact structure compared to the pure silica sol film. (C) 2008 Elsevier B.V. All rights reserved.

富钇稀土-铝合金制取的研究Study on Preparation of Yttrium-Rich RE-Al Alloys

我国江西龙南稀土矿是目前世界上储量最大的富钇稀土矿、研制具有多种用途的钇（Y）-铝（Al）或富钇混合稀土（Ymm）-铝中间合金，对于开拓我国龙南稀土矿的应用领域扩大稀土合金出口具有重要意义。基于这一背景并针对目前氟化物体系制取Ymm-Al合金时存在着电解温度高，腐蚀现象严重，电效偏低等缺点，本文系统开展了在氯化物熔盐体系中电解制取Ymm-Al合金的研究工作。本工作由三部分组成：在第一部分工作中，开展了熔盐电解所需要基本原料-无水稀土氯化物制取的工艺研究。利用化学分析和结构分析手段，弄清了干法氯化过程中YmmCl_3水解的机理，提出了减弱水解的措施，即YmmCl_3先在850-900 ℃灼烧1.5 + 0.2hr，脱掉吸附水并将碱式碳酸盐转化为氧化物，增加稀土氧化物的比表面。通过条件试验得到最佳工艺条件为：采用NH_4 Cl:Ymm_2 O_3 = 14:1（摩尔比）的配料比，每次投入氯化装置的原料量为0.26 - 0.36 kg, 在400-450 ℃氯化反应激烈开始后迅速降温至400 ℃以下，待物料粘结现象消失后，再行升温氯化。出料及后期控制温在475 ± 25 ℃。经过3.8 ± 0.2hr氯化，可制得水不溶物小于1%并符合熔盐电解要求的YmmCl_3原料。此新工艺与原有干法工艺相比，流程短，装置简单，不需密闭抽真空，成本低，适于制取任何量的优质熔盐电解所需氯化稀土原料。在第二部分工作中，利用上述YmmCl_3原料，以液态铝为阴极，在氯化物体系中进行熔盐电解，通过试验得出在小型试验规模制取Ymm-Al合金的最隹工艺条件为：电解质组成（重量比）40%YmmCl_3-1%NaF-59%等摩尔的NaCl-KCl；电解温度为790 ± 5 ℃；阴极电流密为0.7 - 0.02A/cm~2；电解电量为333 ± 5库仑/克铝，制得钇铝合金中Ymm含量为10 ± 2%。添加1%的NaF可消除阴极表面生成枝状物，减少合金中夹渣和熔盐中沉渣。在电解工作中，将方差分析应用于试验数据处理，方差分析结果表明，各种试验因素对电效有明显影响，试验数据可靠，试验误差在允许范围以内。在第三部分工作中，利用线性扫描伏安法测定了在最隹电解工艺条件下Y~（3+）和Ymm在液态铝及钼电极上的析出电位。测定结果表明：Y~（3+）和Ymm~（3+）在液态铝阴极上的析出电位比在钼阴极上偏正0.2 ～ 0.8伏，氟离子的加入要比不加氟时析出电位不有同程度的负移，但考虑到氟离了具有消渣作用，加入少量氟比物添加剂对提高电效有利。