Metal catalysis-free, direction-controlled planar growth of single-crystalline alpha-Si3N4 nanowires on Si(100) substrate

Single-crystalline alpha-Si3N4 nanowires are controlled to grow perpendicular to the wet-etched trenches in the SiO0.94 film on the plane of the Si substrate without metal catalysis. A detailed characterization is carried out by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The photoluminescence at 600 nm from alpha-Si3N4 nanowires is attributed to the recombination at the defect state formed by the Si dangling bond N3 equivalent to Si-center dot. The growth mechanism is considered to be related to the catalysis and nitridation of SiO nanoclusters preferably re-deposited around the inner corner of the trenches, as well as faster Si diffusion along the slanting side walls of the trenches. This simple direction-controlled growth method is compatible with the CMOS process, and could facilitate the fabrication of alpha-Si3N4 nanoelectronic or nanophotonic devices on the Si platform.

Dielectric response and its light-induced change in undoped alpha-Si : H films below 13 MHz

The low frequency (<13 MHz) dielectric response and its light-induced change in undoped a-Si:H were investigated in detail. The dielectric constant epsilon (the real part) in this range decreases with illumination time: following a stretched exponential law similar to that found for other light-induced changes. The saturation relative change was about 0.1-0.2 % for the measured samples. The change is fading away either after repeated illumination-annealing training or by aging at room temperature. The present results indicate some rearrangement of the whole Si network caused by light soaking.

Alpha OSEK:一个基于OSEK/VDX标准实现的嵌入式实时操作系统

文章介绍了基于OSEK标准实现的嵌入式实时操作系统-AlphaOSEK。该操作系统适于深嵌入、小内存、有强实时需求的环境。介绍了操作系统的各组成模块及相关特征,还分析了AlphaOSEK对OSEK标准的优化。

Study on the technology of thermal cracking of paraffin to alpha olefins

Alpha olefins are mainly produced from paraffin cracking in China, but their quality is not good because of bad quality of cracking feed and outdated technology. The technology of paraffin once-through cracking, paraffin recycle cracking of removing the heavy fraction after wax vaporizing and that of removing the heavy fraction before wax vaporizing were investigated in this paper. It was found that the technology of paraffin recycle cracking of removing the heavy fraction before wax vaporizing is new and better under the same operating conditions. Using hard paraffin (mp 54-56 degrees C) as feed, the high-quality alpha olefins products (C-5-C-21) containing more than 97 wt% of olefins and more than 88 wt% of alpha olefins are produced under optimum process conditions, which are a steam to paraffin ratio of 15 wt%, process temperature of 600 degrees C, low hydrocarbon partial pressure and residence time of 2 s. In addition, with the technology of the second injecting steam in ethylene cracking used in paraffin cracking, producing coke in paraffin cracking furnace has been markedly reduced.

Experimental study on K alpha X-ray emission from intense femtosecond laser-solid interactions

The characteristics of K alpha X-ray sources generated by p-polarized femtosecond laser-solid interactions are experimentally studied in the relativistic regime. By use of knife-edge image technique and a single-photon-counting X-ray CCD camera, we obtaine the source size, the spectrum and the conversion efficiency of the Ka X-ray sources. The experimental results show that the conversion efficiency of Ka photons reaches an optimum value of 7.08 x 10(-6)/sr at the laser intensity of 1.6 x 10(18) W/cm(2), which is different from the Reich's simulation results (Reich et al., 2000 Phys. Rev. Lett. 84 4846). We find that about 10% of laser energy is converted into the forward hot electrons at the laser intensity of 1.6 x 10(18) W/cm(2).

Yellow luminescence mechanism and persistent photoconductivity in n-GaN single crystal films grown on alpha-Al2O3(0001) substrates by LP-MOCVD

Unintentionally doped and Si-doped single crystal n-GaN films have been grown on alpha-Al2O3 (0001) substrates by LP-MOCVD. Room temperature photoluminescence measurement showed that besides the bandedges, the spectrum of an undoped sample was a broad deep-level emission band peaking from 2.19 to 2.30eV, whereas the spectrum for a Si-doped sample was composed of a dominant peak of 2.19eV and a shoulder of 2.32eV. At different temperatures, photoconductance buildup and its decay were also observed for both samples.. The likely origins of persistent photoconductivity and yellow luminescence, which might be associated with deep defects inclusive of either Ga vacancy(V-Ga)/Ga vacancy complex induced by impurities or N antisite (N-Ga), will be proposed.