Poliuretana contendo corante azóico e espaçador tipo bis-carbonato como material para fabricação de filmes nanoestruturados

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Desenvolvimento e caracterização de dispositivos luminescentes híbridos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Investigação das propriedades elétricas, ópticas e eletroquímicas de filmes finos semicondutores de BiVO4 e NiO para aplicação em fotoeletrocatálise

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Filmes nanoestruturados aplicados ao sistema de língua eletrônica: um estudo de interfaces

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Tratamento fotocatalítico de corante ácido usando filmes finos de vidro/Ti 'O IND. 2' e degradação fotoeletrocatalítica de corante vat sobre eletrodos de filmes finos de Ti/Ti 'O IND. 2'

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Molecular design of new P3HT derivatives: Adjusting electronic energy levels for blends with PCBM

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Production and Characterization of Composite Material Useful as a Protective Barrier in Electronic Applications

This work describes the production and characterization of a selective membrane useful for electronic devices. The membrane was a composite made by a thin film of plasma-polymerized HFE (methyl nonafluoro(iso)butyl ether) immersed in plasma-polymerized HMDS (hexamethyldisilazane) film, a third phase being 5 µm starch particles included in this matrix. The film was deposited on silicon substrates and its physical, chemical and adsorption characteristics were determined. Infrared and x-ray photoelectron spectroscopy analyses showed fluorine and carboxyl groups on the bulk and the surface, respectively. SEM results indicate the film is conformal even if starch is present. Optical microscopy analysis showed good resistance toward acid and base solutions. Quartz crystal microbalance indicated adsorption of polar organic compounds on ppm range. This thin film is environment-friendly and can be used as a protective layer or in electronic devices due to adsorption of volatile organic compounds.

Síntese e caracterização de alvo de óxido de zinco dopado com alumínio

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Estrutura supramolecular de um derivado de perileno em filmes finos fabricados por evaporação térmica a vácuo

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Growth and Characterization of Silicon Carbide Thin Films Using a Nontraditional Hollow Cathode Sputtering Technique

Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC. Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed that were used to identify the film polytype on both 4H-SiC substrates and Si substrates. Results are presented about the ability to incorporate Ge into the growing SiC films for the purpose of creating a possible heterojunction device with pure SiC. Efforts to synthesize graphene on these films are introduced and reasons for the inability to create it are discussed. Analysis mainly includes crystallographic and morphological studies about the deposited films and their quality using x-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger electron spectroscopy (AES) and Raman spectroscopy. Optical and electrical properties are also discussed via ellipsometric modeling and resistivity measurements. The general interpretation of these analytical experiments indicates that the films are not single crystal. However, the majority of the films, which proved to be the 3C-SiC polytype, were grown in a highly ordered and highly textured manner on both (111) and (110) Si substrates.

Stability of Order in Solvent-Annealed Block Copolymer Thin Films

ABSTRACT: One way to produce high order in a block copolymer thin film is by solution casting a thin film and slowly evaporating the solvent in a sealed vessel. Such a solvent-annealing process is a versatile method to produce a highly ordered thin film of a block copolymer. However, the ordered structure of the film degrades over time when stored under ambient conditions. Remarkably, this aging process occurs in mesoscale thin films of polystyrene-polyisoprene triblock copolymer where the monolayer of vitrified 15 nm diameter polystyrene cylinders sink in a 20 nm thick film at 22 °C. The transformation is studied by atomic force microscopy (AFM). We describe the phenomena, characterize the aging process, and propose a semiquantitative model to explain the observations. The residual solvent effects are important but not the primary driving force for the aging process. The study may lead to effective avenue to improve order and make the morphology robust and possibly the solvent-annealing process more effective.

MEH-PPV Thin Films for Radiation Sensor Applications

This work deals with MEH-PPV thin films to be used as gamma radiation sensors. The polymer thin films with two different thicknesses (30 and 100 nm) were irradiated at room temperature with different gamma radiation doses (up to 25 kGy). Optical properties of the material were investigated with FTIR and UV-Vis absorption spectroscopy. Results show that gamma radiation does not degrade substantially the thin-film material, suggesting that a crosslink effect may be occurring. The characteristic absorption peak of MEH-PPV, around 500 nm is shifted to shorter wavelengths with the increase of gamma radiation doses for both thicknesses samples. The 30-nm-thick samples showed a larger variation absorbance at a specific wavelength and a larger peak shift. These results indicate their potential for use in monitoring the radiation doses used on the sterilization of health care products.

Numerical analysis of different methods to calculate residual stresses in thin films based on instrumented indentation data

In this work, different methods to estimate the value of thin film residual stresses using instrumented indentation data were analyzed. This study considered procedures proposed in the literature, as well as a modification on one of these methods and a new approach based on the effect of residual stress on the value of hardness calculated via the Oliver and Pharr method. The analysis of these methods was centered on an axisymmetric two-dimensional finite element model, which was developed to simulate instrumented indentation testing of thin ceramic films deposited onto hard steel substrates. Simulations were conducted varying the level of film residual stress, film strain hardening exponent, film yield strength, and film Poisson's ratio. Different ratios of maximum penetration depth h(max) over film thickness t were also considered, including h/t = 0.04, for which the contribution of the substrate in the mechanical response of the system is not significant. Residual stresses were then calculated following the procedures mentioned above and compared with the values used as input in the numerical simulations. In general, results indicate the difference that each method provides with respect to the input values depends on the conditions studied. The method by Suresh and Giannakopoulos consistently overestimated the values when stresses were compressive. The method provided by Wang et al. has shown less dependence on h/t than the others.

Determination of carrier mobility in MEH-PPV thin-films by stationary and transient current techniques

Charge transport and shelf-degradation of MEH-PPV thin-films were investigated through stationary (e.g. current versus voltage - JxV) and transient (e.g. Time-of-Flight - ToF, Dark-Injection Space-Charge-Limited Current - DI-SCLC, Charge Extraction by Linearly Increasing Voltage - CELN) current techniques. Charge carrier mobility in nanometric films was best characterized through JxV and DI-SCLC. It approaches 10(-6) cm(2)Ns under a SCLC regime with deep traps for light-emitting diode applications. ToF measurements performed on micrometric layers (i.e. - 3 mu m) confirmed studies in 100 nm-thick films as deposited in OLEDs. All results were comparable to a similar poly(para-phenylene vinylene) derivative, MDMO-PPV. Electrical properties extracted from thin-film transistors demonstrated mobility dependence on carrier concentration in the channel (similar to 10(-7)-10(-4) cm(2)/Vs). At low accumulated charge levels and reduced free carrier concentration, a perfect agreement to the previously cited techniques was observed. Degradation was verified through mobility reduction and changes in trap distribution of states. (C) 2011 Elsevier B.V. All rights reserved.