The role of plants in channel-dyke and field irrigation systems for domestic wastewater treatment in an integrated eco-engineering system

Eight kinds of plants were tested in channel-dyke and field irrigation systems. The removal rates of TP, phosphate, TN, ammonia, CODcr and BOD, in the channel-dyke system with napiergrass (Pennisetum purpurem Schumach, x Pennisetum alopecuroides (L.) Spreng American) were 83.2, 82.3, 76.3, 96.2, 73.5 and 85.8%, respectively. The field irrigation systems with rice I-yuanyou No.1(88-132) (Oryza sativa L.) and rice II- suakoko8 (Oryza glaberrima) had high efficiency for N removal; the removal rate were 84.7 and 84.3%, respectively. The mass balance data revealed that napiergrass, rice I and II were the most important nutrient sinks, assimilating more than 50% of TP and TN. Plant uptake of N and P as percentage of total removal from wastewater correlated with biomass yield of and planting mode. (C) 2000 Elsevier Science B.V. All rights reserved.

Single mode vertical-cavity surface emitting laser with surface plasmon nanostructure

The vertical-cavity surface-emitting laser(VCSEL) has proved to be a low cost light source with attractive properties such as surface emission, circular and low divergence output beam, and simple integration in two-dimensional array. Many new applications such as in spectroscopy, optical storage, short distance fiber optic interconnects, and in longer distance communication, are continuously arising. Many of these applications require stable and single-mode high output power. Several methods that affect the transverse guiding and/or introduce mode selective loss or gain have been developed. In this study, a method for improving the single mode output power by using metal surface plasmons nanostructure is proposed. Theoretical calculation shows that the outpout power is improved about 50% compared to the result of standard VCSELs.

Comparison of free spectral range and quality factor for two-dimensional square and circular microcavities

Free spectral range of whispering-gallery (WG)-like modes in a two-dimensional (2D) square microcavity is found to be twice that in a 2D circular microcavity. The quality factor of the WG-like mode with the low mode number in a 2D square microcavity, calculated by the finite-difference time-domain (FDTD) technique and the Pade approximation method, is found to exceed that of the WG mode in 2D circular microcavity with the same cavity dimension and close mode wavelength.

A novel design of grating couplers for efficient broadband coupling between silicon-on-insulator nanophotonic waveguides and fibres

A novel design of out-of-plane grating couplers is proposed for coupling between silicon-on-insulator nanophotonic waveguides and single-mode fibres. The coupler with the first-order diffraction coupling to the optical fibre is actually a second-order reflected grating with two times of period of the first-order grating. To enhance outcoupled power, a back hole is designed to form in the silicon substrate and a kind of metals is placed on the top acting as a reflection layer. The coupler is optimized using coupled-mode- based simulations, showing that, the coupling efficiency to and from tapered optical fibre can be as high as 85% with 1 dB bandwidth about 23nm.

Experimental study of a pulsed ytterbium-doped fibre laser with fast and slow saturable absorbers in a linear cavity

We present a linear-cavity stretched-pulse fibre laser with mode locking by a nonlinear polarization rotation and by semiconductor saturable-absorber mirrors. A Q-switched mode-locking cw train and a mode-locking pulse train are obtained in the experiment. We investigate the effects of the equivalent fast saturable absorber and the slow saturable absorbers in experiment. It is found that neither the nonlinear polarization evolution effect nor a semiconductor saturable absorber mirror is enough to produce the stable cw mode-locking pulses in this experiment. A nonlinear polarization evolution effect controls the cavity loss to literally carve the pulses; semiconductor saturable absorber mirrors provide the self-restarting and maintain the stability of the mode-locking operation.

Mode characteristics for equilateral triangle optical resonators

Mode characteristics of equilateral triangle resonators (ETRs) are analyzed based on the symmetry operation of the point group C-3v. The results show that doubly degenerate eigenstates can be reduced to the A(1) and A(2) representations of C-3v, if the longitudinal mode number is a multiple of 6; otherwise, they form the E irreducible representation Of C-3v. And the one-period length for the mode light ray is half of the perimeter of the ETR. Mode Q-factors are calculated by the finite-difference time-domain (FDTD) technique and compared with those calculated from far-field emission based on the analytical near-field pattern for TE and TM modes. The results show that the far-field emission based on the analytical field distribution can be used to estimate the mode Q-factor, especially for TM modes. FDTD numerical results also show that Q-factor of TE modes reaches maximum value as the longitudinal mode number is a multiple of 7. In addition, photoluminescence spectra and measured Q-factors are presented for fabricated ETR with side lengths of 20 and 30 mu m, and the mode wavelength intervals are compared with the analytical results.

Passive mode locking of a diode-end-pumped Nd : GdVO4 laser with a semiconductor saturable absorber mirror

We report an end-pumped and passive mode-locking all-solid-state laser. The laser consists of a Nd:GdVO4 crystal and a linear resonator with a semiconductor saturable absorber mirror that yield mode locking. We achieved stable continuous-wave mode locking with an 8-ps pulse duration at a 154-MHz repetition rate. The average output power was 600 mW with 4 W of pump power. To our knowledge this is the first report of the use of a Nd:GdVO4 crystal for mode locking with a semiconductor saturable absorber mirror. (C) 2003 Optical Society of America.

The study of the behavior of exciton and photon within semiconductor microcavity under hydrostatic pressure

We studied, for the first time, the strong coupling between exciton and cavity mode within semiconductor microcavity under hydrostatic pressure, and measured the Rabi splitting. The strong coupling between exciton and cavity mode, and so Rabi splitting appear clearly as the applied pressure reaches 0.37-0.41 GPa. The experiment result shows that hydrostatic pressure not only can tune the coupling between exciton and cavity mode effectively, but also can keep exciton property almost unchanged during the whole tuning procedure in contrast to other tuning method (temperature field et al). Our result agrees with the related theory very well. The Rabi splitting, extracted from fitting the measured mode-energy vs pressure curves with correspanding theoretical model, is equal to 6 meV.

Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (lambda=0.98 mu m)

In this paper, we conduct a theoretical analysis of the design, fabrication, and performance measurement of high-power and high-brightness strained quantum-well lasers emitting at 0.98 mum, The material system of interest consists of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. Some key parameters of the laser structure are theoretically analyzed, and their effects on the laser performance are discussed. The laser material is grown by metal-organic chemical vapor deposition and demonstrates high quality with low-threshold current density, high internal quantum efficiency, and extremely low internal loss. High-performance broad-area multimode and ridge-waveguide single-mode laser devices are fabricated. For 100-mum-wide stripe lasers having a cavity length of 800 mum, a high slope efficiency of 1.08 W-A, a low vertical beam divergence of 34 degrees, a high output power of over 4.45 W, and a very high characteristic temperature coefficient of 250 K were achieved. Lifetime tests performed at 1.2-1.3 W (12-13 mW/mum) demonstrates reliable performance. For 4-mum-wide ridge waveguide single-mode laser devices, a maximum output power of 394 mW and fundamental mode power up to 200 mW with slope efficiency of 0.91 mW/mum are obtained.

Kinetics of picosecond laser pulse induced charge separation and proton transfer in bacteriorhodopsin

Bacteriorhodopsin (BR) films oriented by an electrophoretic method are deposited on a transparent conductive ITO glass. A counterelectrode of copper and gelose gel is used to compose a sandwich-type photodetector with the structure of ITO/BR film/gelose gel/Cu. A single 30-ps laser pulse and a mode-locked pulse train are respectively used to excite the BR photodetector. The ultrafast failing edge and the bipolar response signal are measured by the digital oscilloscope under seven different time ranges. Marquardt nonlinear least squares fitting is used to fit all the experimental data and a good fitting equation is found to describe the kinetic process of the photoelectric signal. Data fitting resolves six exponential components that can be assigned to a seven-step BR photocycle model: BR-->K-->KL-->L-->M-->N-->O-->BR. Comparing tests of the BR photodetector with a 100-ps Si PIN photodiode demonstrates that this type of BIR photocletector has at least 100-ps response time and can also serve as a fast photoelectric switch. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

Guiding mode in elliptical core microstructured polymer optical fiber

A kind of microstructured polymer optical fiber with elliptical core has been fabricated by adopting in-situ chemical polymerization technology and the secondary sleeving draw-stretching technique. Microscope photography demonstrates the clear hole-structure retained in the fiber. Though the holes distortion is visible, initial laser experiment indicates that light can be strongly confined in the elliptical core region, and the mode field is split obviously and presents the multi-mode characteristic. Numerical modeling is carried out for the real fiber with the measured parameters, including the external diameter of 150 pin, the average holes diameter of 3.3 mu m, and the average hole spacing of 6.3 mu m. by using full-vector plane wave method. The guided mode fields of the numerical simulation are consistent with the experiment result. This fiber shows the strong multi-mode and weak birefringence in the visible and near-infrared band, and has possibility for achieving the fiber mode convertors, mode selective couplers and so on.

Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells

The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative current density of the zinc-blende GaN/Ga0.85Al0.15N strained quantum well (100 Angstrom well width) have been investigated using a 6 X 6 Hamiltonian model including the heavy hole, Light hole, and spin-orbit split-off bands. At the k = 0 point, it is found that the light hole strongly couples with the spin-orbit split-off hole, resulting in the so+lh hybrid states. The heavy hole does not couple with the light hole and the spin-orbit split-off hole. Optical transitions between the valence subbands and the conduction subbands obey the Delta n=0 selection rule. At the k not equal 0 points, there is strong band mixing among the heavy hole, light hole, and spin-orbit split-off hole. The optical transitions do not obey the Delta n=0 selection rule. The compressive strain in the GaN well region increases the energy separation between the so1+lh1 energy level and the hh1 energy level. Consequently, the compressive strain enhances the TE mode optical gain, and strongly depresses the TM mode optical gain. Even when the carrier density is as large as 10(19) cm(-3), there is no positive TM mode optical gain. The TE mode optical gain spectrum has a peak at around 3.26 eV. The transparency carrier density is 6.5 X 10(18) cm(-3), which is larger than that of GaAs quantum well. The compressive strain overall reduces the transparency carrier density. The J(rad) is 0.53 kA/cm(2) for the zero optical gain. The results obtained in this work will be useful in designing quantum well GaN laser diodes and detectors. (C) 1996 American Institute of Physics.

JFET SOS devices: Processing and gamma radiation effects

A process for fabricating n channel JFET/SOS (junction field-effect transistors on silicon-on-sapphire) has been researched. The gate p(+)n junction was obtained by diffusion, and the conductive channel was gotten by a double ion implantation. Both enhancement and depletion mode transistors were fabricated in different processing conditions. From the results of the Co-50 gamma ray irradiation experimental we found that the devices had a good total dose radiation-hardness. When the tot;ll dose was 5Mrad(Si), their threshold voltages shift was less than 0.1V. The variation of transconductance and the channel leakage current were also little.

Multi-mode Vortex-induced Vibration of Slender Cable Experiencing Shear Flow

The dynamic characteristics of slender cable often present serried modes with low frequencies due to large structure flexibility resulted from high aspect ratio (ratio of length to diameter of cable), while the flow velocity distributes non-uniformly along the cable span actually in practical engineering. Therefore, the prediction of the vertex-induce vibration of slender cable suffered from multi-mode and high-mode motions becomes a challenging problem. In this paper a prediction approach based on modal energy is developed to deal with multi-mode lock-in. Then it is applied to the modified wake-oscillator model to predict the VIV displacement and stress responses of cable in non-uniform flow field. At last, illustrative examples are given of which the VIV response of flexible cable in nonlinear shear flow field is analyzed. The effects of flow velocity on VIV are explored. Our results show that both displacement and stress responses become larger as the flow velocity increasing; especially higher stress response companied with higher frequency vibration should be paid enough attention in practical design of SFT because of its remarkable influence on structure fatigue life.

Chemical Bonding and Electronic Structure of 4d-Metal Monosulfides

Bond distances, vibrational frequencies, dissociation energies, electron affinities, ionization potentials and dipole moments of the title molecules in neutral and charged ions were studied by use of density functional method. Ground states for each molecule were assigned. The calculated bond distance decreases with the increasing of atomic number of 4d metals, reaches minimum at RhS, then increases. For cationic molecules, the calculated bond distance decreases to the minimum at MoS+, then increases. The calculated vibrational frequency decreases from YS(YS+) to PdS(PdS+) for both neutral and cationic molecules. The bond ionic character decreases from YS(YS+) to PdS(PdS+) for neutral and cationic molecules. The bonding patterns are discussed and compared with the available studies.