Proceedings of the U.S. Nuclear Regulatory Commission Eleventh Water Reactor Safety Research Information Meeting, held at National Bureau of Standards, Gaithersburg, Maryland, October 24-28, 1983 /

Includes bibliographies.

Proceedings of the U.S. Nuclear Regulatory Commission Thirteenth Water Reactor Safety Research Information Meeting, held at National Bureau of Standards, Gaithersburg, Maryland, October 22-25, 1985 /

Includes bibliographies.

Proceedings of the Second International Atomic Energy Agency Specialists' Meeting on Subcritical Crack Growth, held at Sendai, Japan, May 15-17, 1985 /

"MEA-2090."

Experimental studies on the accuracy of wax patterns used in investment casting

Investment casting is often used to produce fully functional prototype components from sacrificial patterns. These patterns (prototypes) may be made using specialized rapid prototyping techniques such as stereolithography or three-dimensional printing. When multiple functional prototypes are required, interim tools for making wax patterns are employed. The objective of this research work was to determine the precision and accuracy of wax patterns produced using several prototype tools. Linear contraction was used to determine the accuracy as a function of the wax injection parameters used in low-pressure injection moulding. Wax patterns were produced using polyurethane and silicone rubber tools. It has been shown that the accuracy of patterns from both tools is similar. However, silicone tools produce patterns with much higher contraction than those produced by polyurethane tools. Unconstrained patterns dimensions contracted as much as 3.44 +/- 0.40 per cent and 1.70 +/- 0.60 per cent for silicone and polyurethane tools respectively. The constrained dimensions contracted by 2.20 +/- 0.20 per cent in the case of silicone tools and 1.40 +/- 0.20 per cent in the case of polyurethane tools.

Microstructure and grain boundary microanalysis of X70 pipeline steel

Grain boundaries (GBs), particularly ferrite: ferrite GBs, of X70 pipeline steel were characterized using analytical electron microscopy (AEM) in order to understand its intergranular stress corrosion cracking (IGSCC) mechanism(s). The microstructure consisted of ferrite (alpha), carbides at ferrite GBs, some pearlite and some small precipitates inside the ferrite grains. The precipitates containing Ti, Nb, V and N were identified as complex carbo-nitrides and designated as (Ti, Nb, WC, N). The GB carbides occurred (1) as carbides along ferrite GBs, (2) at triple points, and (3) at triple points and extending along the three ferrite GBs. The GB carbides were Mn rich, were sometimes also Si rich, contained no micro-alloying elements (Ti, Nb, V) and also contained no N. It was not possible to measure the GB carbon concentration due to surface hydrocarbon contamination despite plasma cleaning and glove bag transfer from the plasma cleaner to the electron microscope. Furthermore, there may not be enough X-ray signal from the small amount of carbon at the GBs to enable measurement using AEM. However, the microstructure does indicate that carbon does segregate to alpha : alpha GBs during microstructure development. This is particularly significant in relation to the strong evidence in the literature linking the segregation of carbon at GBs to IGSCC. It was possible to measure all other elements of interest. There was no segregation at alpha : alpha GBs, in particular no S, P and N, and also no segregation of the micro-alloying elements, Ti, Nb and V. (C) 2003 Kluwer Academic Publishers.

Comparative atmospheric corrosion of primary and cold rolled copper in Australia

Atmospheric corrosion tests, according to ASTM G50, have been carried out in Queensland, Australia, at three different sites representing three different environmental conditions. A range of materials including primary copper (electrosheet) and electrolytic tough pitch (traditional cold rolled) copper have been exposed. Data is available for five exposure periods over a three year time span. X-Ray Diffraction has been used to determine the composition of the corrosion products. Corrosion rates have been determined for each material at each of the exposure sites and are compared with corrosion rates obtained from other long term atmospheric corrosion test programs. Primary copper sheet (electrosheet) behaves like traditionally produced cold rolled copper (C11000) sheet but with an increased corrosion rate. This difference between the rolled copper samples and the primary copper samples is probably due to a combination of factors related to the difference in crystallographic texture of the underlying copper, the morphology and texture of the cuprite layer, the surface roughness of the sheets, and the differences in mass. These factors combine together to provide an increased oxidation rate and TOW for the electrosheet material and which is significantly higher at the more tropical sites. For a sulfate environment (Urban) the initial corrosion product is cuprite with posnjakite and brochantite also occurring at longer exposures. Posnjakite is either washed away or converted to brochantite during further exposure. The amount of brochantite increases with exposure time and forms the blue-green patina layer. For a chloride environment (Marine) the initial corrosion product is cuprite with atacamite also occurring at longer exposures.

Stress crrosion cracking fracture mechanisms in rock bolts

Rock bolts have failed by Stress Corrosion Cracking (SCC). This paper presents a detailed examination of the fracture surfaces in an attempt to understand the SCC fracture mechanism. The SCC fracture surfaces, studied using Scanning Electron Microscopy (SEM), contained the following different surfaces: Tearing Topography Surface (TTS), Corrugated Irregular Surface (CIS) and Micro Void Coalescence (MVC). TTS was characterised by a ridge pattern independent of the pearlite microstructure, but having a spacing only slightly coarser than the pearlite spacing. CIS was characterised as porous irregular corrugated surfaces joined by rough slopes. MVC found in the studied rock bolts was different to that in samples failed in a pure ductile manner. The MVC observed in rock bolts was more flat and regular than the pure MVC, being attributed to hydrogen embrittling the ductile material near the crack tip. The interface between the different fracture surfaces revealed no evidence of a third mechanism involved in the transition between fracture mechanisms. The microstructure had no effect on the diffusion of hydrogen nor on the fracture mechanisms. The following SCC mechanism is consistent with the fracture surfaces. Hydrogen diffused into the material, reaching a critical concentration level. The thus embrittled material allowed a crack to propagate through the brittle region. The crack was arrested once it propagated outside the brittle region. Once the new crack was formed, corrosion reactions started producing hydrogen that diffused into the material once again. (C) 2003 Kluwer Academic Publishers.

Understanding magnesium corrosion - A framework for improved alloy performance

The purpose of this paper is to provide a succinct but nevertheless complete mechanistic overview of the various types of magnesium corrosion. The understanding of the corrosion processes of magnesium alloys builds upon our understanding of the corrosion of pure magnesium. This provides an understanding of the types of corrosion exhibited by,magnesium alloys, and also of the environmental factors Of most importance. This deep understanding is required as a foundation if we are to produce magnesium alloys much more resistant to corrosion than the present alloys. Much has already been achieved, but there is vast scope for improvement. This present analysis can provide a foundation and a theoretical framework for further, much needed research. There is still vast scope both for better fundamental understanding of corrosion processes, engineering usage of magnesium, and also on the corrosion protection of magnesium alloys in service.

Amorphous structures induced in monocrystalline silicon by mechanical loading

Different amorphous structures have been induced in monocrystalline silicon by high pressure in indentation and polishing. Through the use of high-resolution transmission electron microscopy and nanodiffraction, it was found that the structures of amorphous silicon formed at slow and fast loading/unloading rates are dissimilar and inherit the nearest-neighbor distance of the crystal in which they are formed. The results are in good agreement with recent theoretical predictions. (C) 2004 American Institute of Physics.

Determination of a misfit dislocation complex in SiGe/Si heterostructures by image deconvolution technique in HREM

The core structure of a dislocation complex in SiGe/Si system composed of a perfect 60degrees dislocation and an extended 60 dislocation has been revealed at atomic level. This is attained by applying the image deconvolution technique in combination with dynamical diffraction effect correction to an image taken with a 200 kV field-emission high-resolution electron microscope. The possible configuration of the dislocation complex is analyzed and their Burgers vectors are determined. (C) 2003 Elsevier B.V. All rights reserved.

Dynamic annealing in III-nitrides under ion bombardment

We study the evolution of structural defects in AlxGa1-xN films (with x=0.0-0.6) bombarded with kilo-electron-volt heavy ions at 77 and 300 K. We use a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy. Results show that an increase in Al content not only strongly enhances dynamic annealing processes but can also change the main features of the amorphization behavior. In particular, the damage buildup behavior at 300 K is essentially similar for all the AlGaN films studied. Ion-beam-produced disorder at 300 K accumulates preferentially in the crystal bulk region up to a certain saturation level (similar to50%-60% relative disorder). Bombardment at 300 K above a critical fluence results in a rapid increase in damage from the saturation level up to complete disordering, with a buried amorphous layer nucleating in the crystal bulk. However, at 77 K, the saturation effect of lattice disorder in the bulk occurs only for xgreater than or similar to0.1. Based on the analysis of these results for AlGaN and previously reported data for InGaN, we discuss physical mechanisms of the susceptibility of group-III nitrides to ion-beam-induced disordering and to the crystalline-to-amorphous phase transition. (C) 2004 American Institute of Physics.

Structural, electrical, and optical analysis of ion implanted semi-insulating InP

Semi-insulating InP was implanted with MeV P, As, Ga, and In ions, and the resulting evolution of structural properties with increased annealing temperature was analyzed using double crystal x-ray diffractometry and cross sectional transmission electron microscopy. The types of damage identified are correlated with scanning spreading resistance and scanning capacitance measurements, as well as with previously measured Hall effect and time resolved photoluminescence results. We have identified multiple layers of conductivity in the samples which occur due to the nonuniform damage profile of a single implant. Our structural studies have shown that the amount and type of damage caused by implantation does not scale with implant ion atomic mass. (C) 2004 American Institute of Physics.

Metalorganic chemical vapor deposition of GaAsN epilayers: microstructures and optical properties

In this article, we investigate the parameters used in the MOCVD growth of GaAsN epilayers on GaAs substrates and some of their microstructures and optical properties. The N incorporation was found to mainly depend on the growth temperature and the fractional 1,1-dimethylhydrazine molar flow. A thin highly strained interface layer was observed between GaAsN and GaAs, which, contrary to previously published results, was not N enriched. The low-temperature (10 K) photoluminescence spectra were composed of several emissions that we attribute to a combination of interband transition and transitions involving localized defect states. (C) 2004 Elsevier B.V. All rights reserved.

Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers

Microstructural and optical properties of InAs-inserted and reference single GaAsN/GaAs quantum-well (QW) structures grown by metalorganic chemical vapor deposition were investigated using cross-sectional transmission electron microscopy and photoluminescence (PL). Significant enhancement of PL intensity and a blueshift of PL emission were observed from the InAs-inserted GaAsN/GaAs QW structure, compared with the single GaAsN/GaAs QW structure. Strain compensation and In-induced reduction of N incorporation are suggested to be two major factors affecting the optical properties. (C) 2004 American Institute of Physics.

[0 0 1] zone-axis bright-field diffraction contrast from coherent Ge(Si) islands on Si(0 0 1): Dedicated to Professor Fang-hua Li on the occasion of her 70th birthday

Coherent Ge(Si)/Si(001) quantum dot islands grown by solid source molecular beam epitaxy at a growth temperature of 700degreesC were investigated using transmission electron microscopy working at 300 kV. The [001] zone-axis bright-field diffraction contrast images of the islands show strong periodicity with the change of the TEM sample substrate thickness and the period is equal to the effective extinction distance of the transmitted beam. Simulated images based on finite element models of the displacement field and using multi-beam dynamical diffraction theory show a high degree of agreement. Studies for a range of electron energies show the power of the technique for investigating composition segregation in quantum dot islands. (C) 2003 Elsevier B.V. All rights reserved.