高亲和力PO4(3-)转运子编码基因的cDNA克隆及特性分析

以简并引物，利用RT -PCR，克隆了普通小麦和黑麦根系的PO 43-转运子( Trans-porter)基因长约1.2kb的部分cDNA序列。对其与GenBank中的已知序列进行同源性比较，结果表明：(1)小麦与拟南芥、番茄等高等植物的氨基酸水平的同源性为60%～78%; (2)与酵母较低为40%左右，而与丝状真菌和细菌的同源性则<27%; (3)小麦与黑麦的同源性为75%。对其表达特性的研究表明：(1)该基因在根系和茎叶组织中均有表达，但在根系组织中转录产物的累积量显著高于茎叶;(2)磷饥饿条件下，茎叶和根系组织中该基因的表达均增强，但根系组织中增强幅度较大，由此认为该基因产物的功能不只是根系从生长环境中吸收PO 43-，而与PO 43-在植物体内的转运密切相关;(3)磷饥饿5天 后的植株重新供给充足的PO 43-，则该基因的表达在24小时内即显著减弱;(4)分根试验中同株的部分根系生长于磷饥饿(OuM)环境中，而另一部分根系生长于PO 43-充足(250uM)的环境中，这两部分根系中该基因转录产物的积累水平并无显著差异。因此认为植物感受磷饥饿胁迫的信号可能来自植物体内部POi-库的耗竭。此外，用磷讥饿条件下的普通小麦根系mRNA构建了cDNA文库，以克隆的部分序列为探针，从cDNA文库中分离了全长序列。

Origin and evolution of new genes

Organisms have variable genome sizes and contain different numbers of genes. This difference demonstrates that new gene origination is a fundamental process in evolutionary biology. Though the study of the origination of new genes dated back more than hal

PCB desorption kinetics under realistic shear and turbulence [progress report]

We hypothesize that the impact of PCB desorption from resuspended sediments depends upon the intensity of the resuspension (which scales to bottom stress in the absence of organisms), the rate at which each congener desorbs (which depends on the size and hydrophobicity of the chemical, the relative amount of 'labile' and 'resistant' forms, and the size distribution of the suspended particles), and the residence time of the particles in the water column (which depends on the time-variable water column turbulence regime and the particle settling velocities). In order to accurately quantify the impact of PCB desorption from Hudson River sediments, we are conducting experiments that realistically mimic bottom shear stress and water column turbulence and rapidly measure PCB congener release. The objectives of this study are to measure the kinetics of PCB congener desorption from Hudson River sediments under realistic bottom shear and water column turbulence conditions and to quantify the impact of shear stress and contaminant aging on PCB desorption kinetics.

Differently lasting effects of prenatal and postnatal chronic clozapine/haloperidol on activity and memory in mouse offspring

We evaluated the behavioral effects of chronic haloperidol (HAL) and clozapine (CLO) during gestation and CNS development, compared with transient treatments that stopped 1-3 weeks before the test. Results: 1) Chronic HAL (6 mg/l in drinking water) but no

Ultra-structural defects cause low bone matrix stiffness despite high mineralization in osteogenesis imperfecta mice.

Bone is a complex material with a hierarchical multi-scale organization from the molecule to the organ scale. The genetic bone disease, osteogenesis imperfecta, is primarily caused by mutations in the collagen type I genes, resulting in bone fragility. Because the basis of the disease is molecular with ramifications at the whole bone level, it provides a platform for investigating the relationship between structure, composition, and mechanics throughout the hierarchy. Prior studies have individually shown that OI leads to: 1. increased bone mineralization, 2. decreased elastic modulus, and 3. smaller apatite crystal size. However, these have not been studied together and the mechanism for how mineral structure influences tissue mechanics has not been identified. This lack of understanding inhibits the development of more accurate models and therapies. To address this research gap, we used a mouse model of the disease (oim) to measure these outcomes together in order to propose an underlying mechanism for the changes in properties. Our main finding was that despite increased mineralization, oim bones have lower stiffness that may result from the poorly organized mineral matrix with significantly smaller, highly packed and disoriented apatite crystals. Using a composite framework, we interpret the lower oim bone matrix elasticity observed as the result of a change in the aspect ratio of apatite crystals and a disruption of the crystal connectivity.

Fluid-structure interaction simulations of a tension-cone inflatable aerodynamic decelerator

A series of fluid-structure interaction simulations of an aerodynamic tension-cone supersonic decelerator prototype intended for large mass payload deployment in planetary explorations are discussed. The fluid-structure interaction computations combine large deformation analysis of thin shells with large-eddy simulation of compressible turbulent flows using a loosely coupled approach to enable quantification of the dynamics of the vehicle. The simulation results are compared with experiments carried out at the NASA Glenn Research Center. Reasonably good agreement between the simulations and the experiment is observed throughout a deflation cycle. The simulations help to illuminate the details of the dynamic progressive buckling of the tension-cone decelerator that ultimately results in the collapse of the structure as the inflation pressure is decreased. Furthermore, the tension-cone decelerator exhibits a transient oscillatory behavior under impulsive loading that ultimately dies out. The frequency of these oscillations was determined to be related to the acoustic time scale in the compressed subsonic region between the bow shock and the structure. As shown, when the natural frequency of the structure and the frequency of the compressed subsonic region approximately match, the decelerator exhibits relatively large nonaxisymetric oscillations. The observed response appears to be a fluid-structure interaction resonance resulting from an acoustic chamber (pistonlike) mode exciting the structure. Copyright © 2013 by Christopher Porter, R. Mark Rennie, Eric J. Jumper.

High-quality metamorphic HEMT grown on GaAs substrates by MBE

Metamorphic high electron mobility transistor (M-HEMT) structures have been grown on GaAs substrates by molecular beam epitaxy (MBE). Linearly graded and the step-graded InGaAs and InAlAs buffet layers hal e been compared, and TEM, PL and low-temperature Hall have been used to analyze the properties of the buffer layers and the M-HEMT structure. For a single-delta-doped M-HEMT structure with an In0.53Ga0.47As channel layer and a 0.8 mum step-graded InAlAs buffer layer, room-temperature mobility of 9000 cm(2)/V s and a sheet electron density as high as 3.6 x 10(12)/cm(2) are obtained. These results are nearly equivalent to those obtained for the same structure grown on an InP substrate. A basic M-HEMT device with 1 mum gate was fabricated, and g(m) is larger than 400 mS/mm. (C) 2001 Elsevier Science B.V. All rights reserved.

对金属稀土金属有机配合物的合成、结构及催化性质研究

合成出三类18种双金属稀土金属有机配合物：第一类：Ln-Li双金属π－烯丙基稀土配合物－LiLn(π-C_3H_5)_4 nD(Ln=La、Tb, n=3; Ln=Y、Dy, n=2.5; Ln=Ce、Pr、Nd、Sm、Gd、Er, n=2; D=二氧六环）。第二类：Ln-Mg双金属π－烯丙基稀土配合物-(π-C_3H_5)_2CnCl_5Mg_2(tmed)_2 (Ln=Ce、Nd)和(π-C_4H_7)_2LnCl_5Mg_2(tmed)_2 (Ln=La、Ce、Nd; C_4H_7=i-C_4H_7)。第三类：Ln-Al双金属配合物－[(CF_3CO_2)_3LnHAlR_2·2THF]_2 (Ln=Y、Nd, R=i-Bu; Ln=Eu, R=Et)。用四园X－ray衍射仪在低温下测定了LiCe(π-C_3H_5)_4·4D、[(CF_3CO_2)_3YHAl(i-Bu)_2 2THF]_2、[(CF_3CO_2)_3NdHAl(i-Bu)_2 2THF]_2和[(CF_3CO_2)_3EuHAlEt_2·2THF]_2的晶体结构。对[(CF_3CO_2)_3YHAl(i-Bu)_2·2THF]_2和LiLn(π-C_3H_5)_4 nD类配合物进行了较详细的NMR研究。二维C－H相关NMR谱表明在[(CF_3CO_2)_3YHAl(i-Bu)_2·2THF]_2配合物中6个CF_3CO_2~-有2个羰基的C与H成键，该结果解释了Ln-Al双金属配合物中相应羰基的非平面结构现象。研究表明LiLn(π-CC_3H_5)_4·nD可催化异戊二烯和苯乙烯均聚合；不同配合物中均以Y配合物的活性为最高。(π-C_3H_5)_2CeCl_5Mg_2(tmed)_2对异戊二烯、丁二烯、苯乙烯以及甲基丙烯酸甲酯（MMA）的聚合有较低的催化活性；(π-C_4H_7)_2LnCl_5Mg_2(tmed)_2也对苯乙烯和异戊二烯的聚合有一定的催化活性。分别以LiCe(π-C_3H_5)_4·4D和(π-C_3H_5)_2CeCl_5Mg_2(tmed)_2作为稀土配位催化剂的模型配合物，研究了其催化所得聚异戊二烯的端基结构。表明聚合物均具有烯丙基端基(-CH_2-CH=CH_2)。证明单体在Ce~(3+)和π－烯丙基之间发生了插入反应，聚合按π－烯丙基机理进行。该结果首次为稀土配位催化共轭双烯烃聚合的活性链端π－烯丙基机理提供了直接的实验证据。(π-C_3H_5)_2CeCl_5Mg_2(tmed)_2-Al(i-Bu)_3(Al/Ce(摩尔比)=4))体系对异戊二烯的聚合具有较高的催化活性，所得聚合物仍具有－CH_3-CH=CH_2端基，而没有i-Bu端基。该结果又一次为上述π-烯丙基机理提供了直接的实验证据。发现Ln(CF_3CO_2)_3-AlEt_3体系可催化THF开环聚合。首次实现稀土催化THF开环聚合。研究了Y(CF_3CO_2)_3-HAl(i-Bu)_2-ECH（环氧氯丙烷）体系催化THF开环聚合法性及聚合机理。讨论了各种聚合条件对该体系催化活性的影响。研究了[(CF_3Co_2)YHAl(i-Bu)_2·2THF]_2在ECH存在下催化THF聚合活性并认为该双金属配合物为Y(CF_3CO_2)_3-HAl(i-Bu)_2-ECH体系的活性体。[(CF_3CO_2)_3YHA(i-Bu)_2·2THF]_2和[(CF_3CO_2)_3EuHAlEt_2·2THF]_2均可催化ECH和MMA聚合，所得PMMA的间同(rr)含量可达76.5％。

High-quality metamorphic HEMT grown on GaAs substrates by MBE

Metamorphic high electron mobility transistor (M-HEMT) structures have been grown on GaAs substrates by molecular beam epitaxy (MBE). Linearly graded and the step-graded InGaAs and InAlAs buffet layers hal e been compared, and TEM, PL and low-temperature Hall have been used to analyze the properties of the buffer layers and the M-HEMT structure. For a single-delta-doped M-HEMT structure with an In0.53Ga0.47As channel layer and a 0.8 mum step-graded InAlAs buffer layer, room-temperature mobility of 9000 cm(2)/V s and a sheet electron density as high as 3.6 x 10(12)/cm(2) are obtained. These results are nearly equivalent to those obtained for the same structure grown on an InP substrate. A basic M-HEMT device with 1 mum gate was fabricated, and g(m) is larger than 400 mS/mm. (C) 2001 Elsevier Science B.V. All rights reserved.

Synchronism of Holocene East Asian monsoon variations and North Atlantic drift-ice tracers (vol 65；pg 443；2006)

IEECAS SKLLQG

Episodic gullying and paleomonsoon cycles on the Chinese Loess Plateau

IEECAS SKLLQG