Tracing the source of bottled water using stable isotope techniques

The Indian Summer Monsoon (ISM) precipitation recharges ground water aquifers in a large portion of the Indian subcontinent. Monsoonal precipitation over the Indian region brings moisture from the Arabian Sea and the Bay of Bengal (BoB). A large difference in the salinity of these two reservoirs, owing to the large amount of freshwater discharge from the continental rivers in the case of the BoB and dominating evaporation processes over the Arabian Sea region, allows us to distinguish the isotopic signatures in water originating in these two water bodies. Most bottled water manufacturers exploit the natural resources of groundwater, replenished by the monsoonal precipitation, for bottling purposes. The work presented here relates the isotopic ratios of bottled water to latitude, moisture source and seasonality in precipitation isotope ratios. We investigated the impact of the above factors on the isotopic composition of bottled water. The result shows a strong relationship between isotope ratios in precipitation (obtained from the GNIP data base)/bottled water with latitude. The approach can be used to predict the latitude at which the bottled water was manufactured. The paper provides two alternative approaches to address the site prediction. The limitations of this approach in identifying source locations and the uncertainty in latitude estimations are discussed. Furthermore, the method provided here can also be used as an important forensic tool for exploring the source location of bottled water from other regions. Copyright (C) 2011 John Wiley & Sons, Ltd.

On numerical prediction of the acoustic source characteristics of an engine exhaust system

The contemporary methods for source characterization rely mainly on experiments. These methods produce inaccurate results in the low‐frequency band, where the characteristics are all the more important. Moreover, the experimental methods cannot be used at the design stage. Hence, a numerical technique to obtain the source characteristics is desirable. In this paper, the pressure‐time history and the mass‐flux‐time history obtained by means of the time‐domain analysis have been used, along with the two‐load method to compute the source characteristics. Two new computational methods for obtaining the source characteristics have been described. These are much simpler, and computationally more economical than the complete time‐domain simulation, which makes use of the method of characteristics.

Zero-phase inverse filtering for extraction of source characteristics

The instants at which significant excitation of vocal tract take place during voicing are referred to as epochs. Epochs and strengths of excitation pulses at epochs are useful in characterizing voice source. Epoch filtering technique proposed by the authors determine epochs from speech waveform. In this paper we propose zero-phase inverse filtering to obtain strengths of excitation pulses at epochs. Zero-phase inverse filter compensates the gross spectral envelope of short-time spectrum of speech without affecting phase characteristics. Linear prediction analysis is used to realize the zero-phase inverse filter. Source characteristics that can be derived from speech using this technique are illustrated with examples.

A generalized network alignment for three-source three-destination multiple unicast networks with delays

The concept of interference alignment when extended to three-source three-destination instantaneous multiple unicast network for the case where, each source-destination pair has a min-cut of 1 and zero-interference conditions are not satisfied, is known to achieve a rate of half for every source-destination pair under certain conditions [6]. This was called network alignment. We generalize this concept of network alignment to three-source three-destination multiple unicast (3S-3D-MU) networks with delays, without making use of memory at the intermediate nodes (i.e., nodes other than the sources and destinations) and using time varying Local Encoding Kernels (LEKs). This achieves half the rate corresponding to the individual source-destination min-cut for some classes of 3S-3D-MU network with delays which do not satisfy the zero-interference conditions.

Diffuse optical tomographic imager using a single light source

Near-infrared diffuse optical tomography (DOT) technique has the capability of providing good quantitative reconstruction of tissue absorption and scattering properties with additional inputs such as input and output modulation depths and correction for the photon leakage. We have calculated the two-dimensional (2D) input modulation depth from three-dimensional (3D) diffusion to model the 2D diffusion of photons. The photon leakage when light traverses from phantom to the fiber tip is estimated using a solid angle model. The experiments are carried for single (5 and 6 mm) as well as multiple inhomogeneities (6 and 8 mm) with higher absorption coefficient in a homogeneous phantom. Diffusion equation for photon transport is solved using finite element method and Jacobian is modeled for reconstructing the optical parameters. We study the development and performance of DOT system using modulated single light source and multiple detectors. The dual source methods are reported to have better reconstruction capabilities to resolve and localize single as well as multiple inhomogeneities because of its superior noise rejection capability. However, an experimental setup with dual sources is much more difficult to implement because of adjustment of two out of phase identical light probes symmetrically on either side of the detector during scanning time. Our work shows that with a relatively simpler system with a single source, the results are better in terms of resolution and localization. The experiments are carried out with 5 and 6 mm inhomogeneities separately and 6 and 8 mm inhomogeneities both together with absorption coefficient almost three times as that of the background. The results show that our experimental single source system with additional inputs such as 2D input/output modulation depth and air fiber interface correction is capable of detecting 5 and 6 mm inhomogeneities separately and can identify the size difference of multiple inhomogeneities such as 6 and 8 mm. The localization error is zero. The recovered absorption coefficient is 93% of inhomogeneity that we have embedded in experimental phantom.

Effect of gate-drain/source overlap on the noise in 90 nm N-channel metal oxide semiconductor field effect transistors

In this paper, we have studied the effect of gate-drain/source overlap (LOV) on the drain channel noise and induced gate current noise (SIg) in 90 nm N-channel metal oxide semiconductor field effect transistors using process and device simulations. As the change in overlap affects the gate tunneling leakage current, its effect on shot noise component of SIg has been taken into consideration. It has been shown that “control over LOV” allows us to get better noise performance from the device, i.e., it allows us to reduce noise figure, for a given leakage current constraint. LOV in the range of 0–10 nm is recommended for the 90 nm gate length transistors, in order to get the best performance in radio frequency applications.

Characteristics of j.f.e.t.s. taking the separation of gate electrode from the source and drain electrodes into account

The performance characteristics of a junction field-effect transistor (j.f.e.t.) are evaluated considering the presence of the gap between the gate electrode and the source and drain terminals. It is concluded that the effect of the gap is to demand a higher drain voltage to maintain the same drain current. So long as the device is operated at the same drain current, the presence of the gap does not change the performance of the device as an amplifier. The nature of the performance of the device as a variable resistor is not affected by the gap if it is less than or equal to the physical height of the channel. For gap lengths larger than the channel height, the effect of the gap is to add a series resistance in the drain.

Digital Dead Time Logic and Protection Circuitry for PWM Voltage Source Converters

Power semiconductor devices have finite turn on and turn off delays that may not be perfectly matched. In a leg of a voltage source converter, the simultaneous turn on of one device and the turn off of the complementary device will cause a DC bus shoot through, if the turn off delay is larger than the turn on delay time. To avoid this situation it is common practice to blank the two complementary devices in a leg for a small duration of time while switching, which is called dead time. This paper proposes a logic circuit for digital implementation required to control the complementary devices of a leg independently and at the same time preventing cross conduction of devices in a leg, and while providing accurate and stable dead time. This implementation is based on the concept of finite state machines. This circuit can also block improper PWM pulses to semiconductor switches and filters small pulses notches below a threshold time width as the narrow pulses do not provide any significant contribution to average pole voltage, but leads to increased switching loss. This proposed dead time logic has been implemented in a CPLD and is implemented in a protection and delay card for 3- power converters.

An Efficient Distributed Scheme for Source Routing Protocol in Communication Networks

In this paper, we propose an efficient source routing algorithm for unicast flows, which addresses the scalability problem associated with the basic source routing technique. Simulation results indicate that the proposed algorithm indeed helps in reducing the message overhead considerably, and at the same time it gives comparable performance in terms of resource utilization across a wide range of workloads.

Transport, optical and magnetotransport properties of hetero-epitaxial InAsxSb1−x/GaAs(x0.06) and bulk View the MathML source crystals: experiment and theoretical analysis

We briefly review the growth and structural properties of View the MathML source bulk single crystals and View the MathML source epitaxial films grown on semi-insulating GaAs substrates. Temperature-dependent transport measurements on these samples are then correlated with the information obtained from structural (XRD, TEM, SEM) and optical (FTIR absorption) investigations. The temperature dependence of mobility and the Hall coefficient are theoretically modelled by exactly solving the linearized Boltzmann transport equation by inversion of the collision matrix and the relative role of various scattering mechanisms in limiting the low temperature and View the MathML source mobility is estimated. Finally, the first observation of Shubnikov oscillations in InAsSb is discussed.

Real source-sink pair

This work is concerned with the interaction of a source-sink pair. The main parameters of the problem are source and sink flow rates, the axial and lateral separations of the source and sink, and the angle between the axes of source and sink. Of concern is the percentage of source fluid that enters the sink as a function of these parameters. The experiments have been carried using the source nozzle diameter of 6 mm and the sink pipe diameter of two sizes: 10 mm and 20 mm. The Reynolds numbers of the source jet is about 3200. The main diagnostics are flow visualization using dye, laser induced fluorescence (LIF), particle streak photographs and particle image velocimetry (Ply). To obtain the removal effectiveness (that is percentage of source fluid that is going through the sink pipe), titration method is used. The sink diameter and the angle between source and the sink axes do not influence efficiencies as do the sink flow rate and the lateral separation. Data from experiments have been consolidated so that these results can be used for designing sinks for removal of heat and pollutants. (C) 2011 Elsevier Ltd. All rights reserved.