Non-Linear Dielectric Properties of PLMN-PT Relaxor Ferroelectrics

Recent investigations on the non-linear (NL) dielectric properties of relaxor ferroelectrics systems, not only as ceramic bodies, but also, in thin films, have showed a significant technological and scientific interest. The most common practical applications of relaxors include multilayer capacitors and actuators. In this work, non-linear dielectric properties of hot-pressed (1-x)[Pb1 -(3/2) yLayMg1/3Nb2/3O3]-xPbTiO3 (PLMN-PT) ferroelectric ceramics were investigated. The NL properties were obtained by using the measurements of the dielectric permittivity of the material as a function of the AC electric field with variable amplitude in the frequency and temperature range of 100 Hz-1 MHz and 50-450 K, respectively. An anomalous behavior of the non-linear dielectric response was observed when submitted to high electric fields levels. The obtained results were analyzed concerning one of the models for the dielectric response of relaxors ferroelectrics materials currently discussed in the literature.

Effect of atmosphere on the electrical properties of TiO2-SnO2 varistor systems

This work illustrates the advancement of research on TiO2-based electroceramics. In this work will be presented that the addition of different dopants, as well as thermal treatments at oxidizing and inert atmosphere, influences of the densification, the mean grain size and the electrical properties of the TiO2-based varistor ceramics. Dopants like Ta2O5, Nb2O5, and Cr2O3 have an especial role in the barrier formation at the grain boundary in the TiO2 varistors, increasing the nonlinear coefficient and decreasing the breakdown electric field. The influence of Cr'(Ti) is to increase the O' and O'(2) adsorption at the grain boundary interface and to promote a decrease in the conductivity by donating electrons to O-2 adsorbed at the grain boundary. In this paper, TiO2 and (Sn,Ti)O-2-based studies of polycrystalline ceramics, which show a non-linear I-V electrical response typical of low voltage varistor systems are also presented. All these systems are potentially promising for varistor applications. (C) 2004 Kluwer Academic Publishers.

Optical and electrical diagnostics of a spark-plug discharge in air

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

The influence of the synthesis route on the final properties of SnO2-based varistors

A comparative study of two customary routes of ceramics processing applied to the synthesis of SnO2-based varistors is reported in this paper. Devices of equivalent composition were prepared through the Pechini method and through directly mixing the oxides without the addition of anti-agglomerants or binders. The microstructures of the sintered samples were characterised with X-ray diffraction and scanning and transmission electron microscopies. The electrical behaviour of the devices was studied on the basis of the current density versus electric field (J-E) characteristics and impedance spectroscopy measurements. The Pechini method ensures the homogeneity in the distribution of the additives in the tin oxide matrix but the formation of secondary phases seems to be independent of the synthesis route. Devices with similar non-linear coefficients of 18 and 21 were obtained through the mixed oxides route and the Pechini method, respectively. (C) 2007 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Electron time-of-flight measurements in sulfur interpreted via an extra surface mobility channel

Time-of-flight measurements were carried out in orthorhombic sulfur for various fields, ranging from -2 to -20 kV/cm. No dependence of the mobility with the electric field was found but the current, normalized by the initial current, showed an electric field dependence at small times, decaying faster for larger electric field. After the failure of the usual models in explaining the resultsincluding the assumption of depth-dependent density of trapsa model assuming an extra mobility channel near the surface provided a reasonable set of parameters independent of the electric field. The measurements were carried out at 8.5, 29, 53, 68, and 79°C. © 1988 The American Physical Society.

On the equivalence of the mechanisms governing switching and hysteresis phenomena

The nucleation and growth model, which is usually applied to switching phenomena, is adapted for explaining surface potential measurements on the P(VDF-TrFE) (polyvinylidene fluoride-trifluoroethylene) copolymer obtained in a constant current corona triode. It is shown that the growth is one-dimensional and that the nucleation rate is unimportant, probably because surface potential measurements take much longer than the switching ones. The surface potential data can therefore be accounted for by a growth model in which the velocity of growth varies exponentially with the electric field. Since hysteresis loops can be obtained from surface potential measurements, it is suggested that similar mechanisms can be used when treating switching and hysteresis phenomena, provided that account is taken of the difference in the time scale of the measurements.

Electrical properties of the SnO2-based varistor

The non-linear electrical properties of CoO-doped and Nb205-doped SnO2 ceramics were characterized. X-ray diffraction and scanning electron microscopy indicated that the system is single phase. The electrical conduction mechanism for low applied electrical field was associated with thermionic emission of the Schottky type. An atomic defect model based on the Schottky double-barrier formation was proposed to explain the origin of the potential barrier at the ceramic grain boundaries. These defects create depletion layers at grain boundaries, favouring electron tunnelling at high values of applied electrical field. © 1998 Chapman & Hall.

Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650°C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700°C for 60 min. The leakage current density of the films was lower than 10-9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.

Electrode poling of cellular polypropylene films with short high-voltage pulses

Recently, piezoelectric cellular polypropylene (PP) was proposed as a new type of quasi-ferroelectric. The observed hysteresis of the charge density as a function of the electric field could be explained as field-dependent charging inside the gas-filled voids. Interestingly enough, the measurable poling behavior of the macroscopic dipoles formed by charges that are trapped at the internal void surfaces is phenomenologically completely identical to the cooperative poling behavior of microscopic molecular dipoles in ferroelectric polymers. Therefore, it can be assumed that charge separation (or charge redistribution) and subsequent trapping in cellular PP is a rather fast switching process. In order to examine the poling dynamics, we developed an experimental setup for pulsed poling. High-voltage pulses with a duration of 45 μs (FWHM) were applied in direct contact to two-side metallized cellular PP films. The pulsed poling yields piezoelectricity in the cellular PP. We study and discuss the dependence of the resulting piezoelectricity on the poling field. We also characterize the charge separation during application of higher electric poling fields of up to -10 kV in direct contact to the two-side metallized films for longer times.

Surveillance on the light-front gauge-fixing Lagrangians

In this work we propose two Lagrange multipliers with distinct coefficients for the light-front gauge that leads to the complete (non-reduced) propagator. This is accomplished via (n · A)2 + (∂ · A) 2 terms in the Lagrangian density. These lead to a well-defined and exact though Lorentz non invariant light-front propagator.

Quantum gauge boson propagators in the light front

Gauge fields in the light front are traditionally addressed via, the employment of an algebraic condition n·A = 0 in the Lagrangian density, where Aμ is the gauge field (Abelian or non-Abelian) and nμ is the external, light-like, constant vector which defines the gauge proper. However, this condition though necessary is not sufficient to fix the gauge completely; there still remains a residual gauge freedom that must be addressed appropriately. To do this, we need to define the condition (n·A) (∂·A) = 0 with n·A = 0 = ∂·A. The implementation of this condition in the theory gives rise to a gauge boson propagator (in momentum space) leading to conspicuous nonlocal singularities of the type (k·n)-α where α = 1, 2. These singularities must be conveniently treated, and by convenient we mean not only mathemathically well-defined but physically sound and meaningful as well. In calculating such a propagator for one and two noncovariant gauge bosons those singularities demand from the outset the use of a prescription such as the Mandelstam-Leibbrandt (ML) one. We show that the implementation of the ML prescription does not remove certain pathologies associated with zero modes. However we present a causal, singularity-softening prescription and show how to keep causality from being broken without the zero mode nuisance and letting only the propagation of physical degrees of freedom.

Influence of the processing conditions and corona poling on the morphology of β-PVDF

The α → β phase transformation of PVDF through the stretching process at different temperatures was investigated. The optimum stretching conditions were studied and characterised by infrared spectroscopy and differential scanning calorimetry. The maximum β-phase content was achieved at 80°C and a stretch ratio of 5. These samples were poled at several electric fields by the corona charge method. The effect of the electric field on the phase transformation was studied by infrared spectroscopy.

PHB/PZT composite

Flexible standing films of piezoelectric composite made of lead zirconate titanate (PZT) ceramic powder and Poly(3-hydroxybutyrate) (PHB) in powder form were obtained by mixing both polymers mechanically and pressed at 180°C. The piezoelectric coefficient d33 were investigated as function of PZT content, poling temperature and electric field. The highest value for d 33 coefficient was around 6pC/N for 50 vol% of PZT content in the composite. As PHB is a biodegradable polymer the composite has potential application as sensor minimizing the environmental problems.

Dielectric behavior of XLPE aged under multi-stressing conditions

In this work fresh cables were laboratory aged under multi-stressing conditions at room temperature. Foils were peeled from cables, with approximately 150 ?m thickness, from the outer, middle and inner positions of the XLPE cable insulating layer. For samples obtained from the outer cable layer position, an increasing near-permanent electrical conduction process with aging time was observed. At the middle and inner cable layer positions a flat-loss relaxation process was observed becoming a dominating process on the ageing. In addition, PEA results confirmed that degradation in the outer region of the XLPE cables arises from the simultaneous presence of dipoles and injected space charge that distorts the internal electric field on the ageing.