959 resultados para EVAPORATION
Resumo:
Environment-friendly management of fruit flies involving pheromones is useful in reducing the undesirable pest populations responsible for decreasing the yield and the crop quality. A nanogel has been prepared from a pheromone, methyl eugenol (ME) using a low-molecular mass gelator. This was very stable at open ambient conditions and slowed down the evaporation of pheromone significantly. This enabled its easy handling and transportation without refrigeration, and reduction in the frequency of pheromone recharging in the orchard. Notably the involvement of the nano-gelled pheromone brought about an effective management of Bactrocera dorsalis, a prevalent harmful pest for a number of fruits including guava. Thus a simple, practical and low cost green chemical approach is developed that has a significant potential for crop protection, long lasting residual activity, excellent efficacy and favorable safety profiles. This makes the present invention well-suited for pest management in a variety of crops.
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Electrical switching studies on amorphous Ge17Te83−xSnx thin films (1 ≤ x ≤ 4) has been done to find their suitability for Phase Change Memory application; Bulk ingots in glassy form are prepared using conventional melt quenching technique and the thin films are coated using flash evaporation technique. Samples are found to exhibit memory type of electrical switching behavior. The switching voltages of Ge17Te83−xSnx thin films have been found to decrease with increase in Sn concentration. The comparatively lower switching voltages of Ge17Te83−xSnx samples, make them suitable candidates for phase change memory applications.
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Hollow structures with unique morphologies form due to particle agglomeration in acoustically levitated nanofluid functional droplets when subjected to external heating. The final diameter of the structure depends only on the ratio of agglomeration to evaporation time scales for various nanoparticle laden droplets, and not on the type of the suspended particles. These time scales depend only on nanoparticle concentration. This valuable information may be exploited to form microstructures with desired properties from ceramic compounds. Phase diagrams for alumina and silica droplets indicate the transition from a bowl to ring structure depending on concentration.
Resumo:
In this article we have demonstrated the influence of growth-temperature on the morphology and orientation of SnS films deposited by thermal evaporation technique. While increasing the growth-temperature, the morphology of SnS films changed from flakes-like nanocrystals to regular cubes, whereas their orientation shifted from <111> to <040> direction. The chemical composition of SnS films gradually changed from sulfur-rich to tin-rich with the increase of growth-temperature. The structural analyzes reveal that the crystal structure of SnS films probably changes from orthorhombic to tetragonal at the growth-temperature of about 410 degrees C. Raman studies show that SnS films grown at all temperatures consist of purely SnS phase, whereas the optical studies reveal that the direct optical bandgap of SnS films decreased with the increase of growth-temperature. From these results it has been emphasized that the morphology and orientation along with electrical and optical properties of nearly stoichiometric SnS films strongly depend on their growth-temperature.
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We extend our analysis of transverse single spin asymmetry in electroproduction of J/psi to include the effect of the scale evolution of the transverse momentum dependent (TMD) parton distribution functions and gluon Sivers function. We estimate single spin asymmetry for JLab, HERMES, COMPASS, and eRHIC energies using the color evaporation model of charmonium production, using an analytically obtained approximate solution of TMD evolution equations discussed in the literature. We find that there is a reduction in the asymmetry compared with our predictions for the earlier case considered by us, wherein the Q(2) dependence came only from DGLAP evolution of the unpolarized gluon densities and a different parametrization of the TMD Sivers function was used.
Resumo:
Crystals of a new nonlinear optical (NLO) material, viz., L-histidinium 2-nitrobenzoate (LHNB) (1) were grown by slow evaporation of an aqueous solution containing equimolar concentrations of L-histidine and 2-nitrobenzoic acid. The structure of the title compound which crystallizes in the non-centrosymmetric monoclinic space group P2(1) was elucidated using single crystal X-ray intensity data. The UV-Vis-NIR spectrum of 1 reveals its transparent nature while the vibrational spectra confirm the presence of the functional groups in 1. The thermal stability and second harmonic generation (SHG) conversion efficiency of 1 were also investigated. (C) 2012 Elsevier GmbH. All rights reserved.
Resumo:
Amorphous thin chalcogenide Si15Te85-xGex films (x: 5, 9, 10, 11, 12) are prepared by flash evaporation and the temperature dependence of resistance of these films has been studied in the temperature range 25-250 degrees C. All the compositions show a linear variation of resistance in this temperature range. Apart from the linear variation, a sharp reduction in resistance at one or at two distinct temperatures (T-TR1/T-TR2) is seen. Thin films annealed at these temperatures, when subjected to X-ray diffraction studies suggest that the dominant crystalline phase at T-TR1 and at T-TR2 is the same and the two dips are associated with varying levels of crystallization. This is also reflected in the atomic force microscopic (AFM) study. Further, the resistance of these two phases shows no drift when the films are annealed for varying lengths of time (10 min to 120 min) suggesting the stability of the phases.
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Hafnium dioxide (HfO2) films, deposited using electron beam evaporation, are optimized for high performance back-gated graphene transistors. Bilayer graphene is identified on HfO2/Si substrate using optical microscope and subsequently confirmed with Raman spectroscopy. Back-gated graphene transistor, with 32 nm thick HfO2 gate dielectric, has been fabricated with very high transconductance value of 60 mu S. From the hysteresis of the current-voltage characteristics, we estimate the trap density in HfO2 to be in the mid 10(11)/cm(2) range, comparable to SiO2.
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Polycrystalline tin sulfide thin films were prepared by thermal evaporation technique. The films grown at substrate temperature of 300 degrees C had an orthorhombic crystal structure with strong preferred orientation along (111) plane. Electrical resistivity of the deposited films was about 32.5 Omega cm with a direct optical band gap of 1.33 eV. Carrier concentration and mobility of charge carriers estimated from the Hall measurement were found to be 6.24 x 10(15) cm(-3) and 30.7 cm(2)V(-1) s(-1) respectively. Heterojunction solar cells were fabricated in superstrate configuration using thermally evaporated SnS as an absorber layer and CdS, In: CdS as window layer. The resistivity of pure CdS thin film of a thickness of 320 nm was about 1-2 Omega cm and was reduced to 40 x 10(-3) Omega cm upon indium doping. The fabricated solar cells were characterized using solar simulator. The solar cells with indium doped CdS window layer showed improved performance as compared to pure CdS window layer. The best device had a conversion efficiency of 0.4% and a fill factor of 33.5%. (C) 2013 Elsevier B.V. All rights reserved.
Resumo:
We extend our analysis of transverse single spin asymmetry in electroproduction of J/ψ to include the effect of the scale evolution of the transverse momentum dependent (TMD) parton distribution functions and gluon Sivers function. We estimate single spin asymmetry for JLab, HERMES, COMPASS, and eRHIC energies using the color evaporation model of charmonium production, using an analytically obtained approximate solution of TMD evolution equations discussed in the literature. We find that there is a reduction in the asymmetry compared with our predictions for the earlier case considered by us, wherein the Q2 dependence came only from DGLAP evolution of the unpolarized gluon densities and a different parametrization of the TMD Sivers function was used.
Resumo:
Graphene nanosheet (GNS) was synthesized by using microwave plasma enhanced CVD on copper substrate and followed by evaporation of tin metal. Scanning and transmission electron microscopy show that nanosize Sn particles are well embedded into the GNS matrix. The composition, structure, and electrochemical properties were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), cyclic voltammetry (CV) and chrono-potentiometry. The first discharge capacity of as-deposited and annealed SnGNS obtained was 1551 mA h/g and 975 mA h/g, respectively. The anodes show excellent cyclic performance and coulombic efficiency.
Resumo:
Schottky barrier devices of metal/semiconductor/metal structure were fabricated using organic semiconductor polyaniline (PANI) and aluminium thin film cathode. Aluminium contacts were made by thermal evaporation technique using two different forms of metals (bulk and nanopowder). The structure and surface morphology of these films were investigated by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. Grain size of the as-deposited films obtained by Scherrer's method, modified Williamson-Hall method, and SEM were found to be different. Current-voltage (I-V) characteristic of Schottky barrier device structure indicates that the calculated current density (J) for device fabricated from aluminium nanopowder is more than that from aluminium in bulk form.
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Amorphous Ge15Te85-xSix thin film switching devices (1 <= x <= 6) have been deposited in sandwich geometry, on glass substrates with aluminum electrodes, by flash evaporation technique. These devices exhibit memory type electrical switching, like bulk Ge15Te85-xSix glasses. However, unlike the bulk glasses, a-Ge15Te85-xSix films exhibit a smooth electrical switching behavior. The electrical switching fields of a-Ge15Te85-xSix thin film samples are also comparable with other chalcogenide samples used in memory applications. The switching fields of a-Ge15Te85-xSix films have been found to increase with increasing Si concentration. Also, the optical band gap of a-Ge15Te85-xSix films is found to increase with Si content. The observed results have been understood on the basis of increase in network connectivity and rigidity with Si addition. (C) 2013 Elsevier Ltd. All rights reserved.
Resumo:
Mesoporous quaternary bioactive glasses and glass-ceramic with alkali-alkaline-earth oxide were successfully synthesized by using non-ionic block copolymer P123 and evaporation induced self assembly (EISA) process followed by acid treatment assisted sal-gel method. As prepared samples has been characterized for the structural, morphological and textural properties with the various analytical techniques. Glass dissolution/ion release rate in simulated body fluid (SBF) was monitored by inductively coupled plasma (ICP) emission spectroscopy, whereas the formation of apatite phase and its crystallization at the glass and glass-ceramic surface was examined by structural, textural and microscopic probes. The influence of alkaline-earth oxide content on the glass structure followed by textural property has become more evident. The pristine glass samples exhibit a wormhole-like mesoporous structure, whereas the glass-ceramic composition is found to be in three different phases, namely crystalline hydroxyapatite, wollastonite and a residual glassy phase as observed in Cerabone (R) A/W. The existence of calcium orthophosphate phase is closely associated with the pore walls comprising nanometric-sized ``inclusions''. The observed high surface area in conjunction with the structural features provides the possible explanation for experimentally observed enhanced bioactivity through the easy access of ions to the fluid. On the other hand, presence of multiple phases in glass-ceramic sample inhibits or delays the kinetics of apatite formation. (C) 2013 Elsevier Inc. All rights reserved.
Resumo:
Experiments involving heating of liquid droplets which are acoustically levitated, reveal specific modes of oscillations. For a given radiation flux, certain fluid droplets undergo distortion leading to catastrophic bag type breakup. The voltage of the acoustic levitator has been kept constant to operate at a nominal acoustic pressure intensity, throughout the experiments. Thus the droplet shape instabilities are primarily a consequence of droplet heating through vapor pressure, surface tension and viscosity. A novel approach is used by employing Legendre polynomials for the mode shape approximation to describe the thermally induced instabilities. The two dominant Legendre modes essentially reflect (a) the droplet size reduction due to evaporation, and (b) the deformation around the equilibrium shape. Dissipation and inter-coupling of modal energy lead to stable droplet shape while accumulation of the same ultimately results in droplet breakup. (C) 2013 Elsevier B.V. All rights reserved.