An investigation of the performance of a new Mechanical thrombectomy device using Bond Graph modelling: application to the extraction of blood clots in the middle cerebral artery

A number of thrombectomy devices using a variety of methods have now been developed to facilitate clot removal. We present research involving one such experimental device recently developed in the UK, called a ‘GP’ Thrombus Aspiration Device (GPTAD). This device has the potential to bring about the extraction of a thrombus. Although the device is at a relatively early stage of development, the results look encouraging. In this work, we present an analysis and modeling of the GPTAD by means of the bond graph technique; it seems to be a highly effective method of simulating the device under a variety of conditions. Such modeling is useful in optimizing the GPTAD and predicting the result of clot extraction. The aim of this simulation model is to obtain the minimum pressure necessary to extract the clot and to verify that both the pressure and the time required to complete the clot extraction are realistic for use in clinical situations, and are consistent with any experimentally obtained data. We therefore consider aspects of rheology and mechanics in our modeling.

A Light-Weight On-Chip Monitoring Network for Dynamic Adaptation and Calibration

Current nanometer technologies suffer within-die parameter uncertainties, varying workload conditions, aging, and temperature effects that cause a serious reduction on yield and performance. In this scenario, monitoring, calibration, and dynamic adaptation become essential, demanding systems with a collection of multi purpose monitors and exposing the need for light-weight monitoring networks. This paper presents a new monitoring network paradigm able to perform an early prioritization of the information. This is achieved by the introduction of a new hierarchy level, the threshing level. Targeting it, we propose a time-domain signaling scheme over a single-wire that minimizes the network switching activity as well as the routing requirements. To validate our approach, we make a thorough analysis of the architectural trade-offs and expose two complete monitoring systems that suppose an area improvement of 40% and a power reduction of three orders of magnitude compared to previous works.

Agent-based modelling for cement hydration

The Agent-Based Modelling and simulation (ABM) is a rather new approach for studying complex systems withinteracting autonomous agents that has lately undergone great growth in various fields such as biology, physics, social science, economics and business. Efforts to model and simulate the highly complex cement hydration process have been made over the past 40 years, with the aim of predicting the performance of concrete and designing innovative and enhanced cementitious materials. The ABM presented here - based on previous work - focuses on the early stages of cement hydration by modelling the physical-chemical processes at the particle level. The model considers the cement hydration process as a time and 3D space system, involving multiple diffusing and reacting species of spherical particles. Chemical reactions are simulated by adaptively selecting discrete stochastic simulation for the appropriate reaction, whenever that is necessary. Interactions between particles are also considered. The model has been inspired by reported cellular automata?s approach which provides detailed predictions of cement microstructure at the expense of significant computational difficulty. The ABM approach herein seeks to bring about an optimal balance between accuracy and computational efficiency.

BioMet®Tools: from modeling and simulation to product design and development

BioMet®Tools is a set of software applications developed for the biometrical characterization of voice in different fields as voice quality evaluation in laryngology, speech therapy and rehabilitation, education of the singing voice, forensic voice analysis in court, emotional detection in voice, secure access to facilities and services, etc. Initially it was conceived as plain research code to estimate the glottal source from voice and obtain the biomechanical parameters of the vocal folds from the spectral density of the estimate. This code grew to what is now the Glottex®Engine package (G®E). Further demands from users in medical and forensic fields instantiated the development of different Graphic User Interfaces (GUI’s) to encapsulate user interaction with the G®E. This required the personalized design of different GUI’s handling the same G®E. In this way development costs and time could be saved. The development model is described in detail leading to commercial production and distribution. Study cases from its application to the field of laryngology and speech therapy are given and discussed.

Land use modelling and the role of stakeholders in natural protected areas: the case of Doñana national park, Spain

Doñana, a National Park since 1969, a UNESCO site since 1994 among other protected area designations of national and international character, is a coastal dune and marshland ecosystem of outstanding importance for biodiversity and conservation at the mouth of the Guadalaquivir River, Southwest Spain. However, the Doñana natural area is seriously threatened by global change factors such as humanly induced climate change, habitat loss, overexploitation of ecosystem services, and pollution. Not all stakeholders are convinced of the benefits of the national park, and management of Doñana, its environs and watershed are the subject of intense disagreement. This interplay between natural characteristics of great value with intense human pressure makes Doñana a fascinating workshop for the study of global human environment interactions. Here, we discuss the role of stakeholders in the application of a cellular automatabased model to Doñana and its environs and present the results of a series of exercises undertaken with stakeholders to parametrize the model, something often done by researchers without stakeholder engagement. By engaging with stakeholders early in the project, feedback generated from workshops contributes to model development. Stakeholders are therefore contributors of empirical data for the model as well as independent evaluators providing local and specialist knowledge.

Integration of research advances in modelling and monitoring in support of WFD river basin management planning in the context of climate change

The integration of scientific knowledge about possible climate change impacts on water resources has a direct implication on the way water policies are being implemented and evolving. This is particularly true regarding various technical steps embedded into the EU Water Framework Directive river basin management planning, such as risk characterisation, monitoring, design and implementation of action programmes and evaluation of the "good status" objective achievements (in 2015). The need to incorporate climate change considerations into the implementation of EU water policy is currently discussed with a wide range of experts and stakeholders at EU level. Research trends are also on-going, striving to support policy developments and examining how scientific findings and recommendations could be best taken on board by policy-makers and water managers within the forthcoming years. This paper provides a snapshot of policy discussions about climate change in the context of the WFD river basin management planning and specific advancements of related EU-funded research projects. Perspectives for strengthening links among the scientific and policy-making communities in this area are also highlighted.

Nanoimprinted diffraction gratings for crystalline silicon solar cells: implementation, characterization and simulation

Light trapping is becoming of increasing importance in crystalline silicon solar cells as thinner wafers are used to reduce costs. In this work, we report on light trapping by rear-side diffraction gratings produced by nano-imprint lithography using interference lithography as the mastering technology. Gratings fabricated on crystalline silicon wafers are shown to provide significant absorption enhancements. Through a combination of optical measurement and simulation, it is shown that the crossed grating provides better absorption enhancement than the linear grating, and that the parasitic reflector absorption is reduced by planarizing the rear reflector, leading to an increase in the useful absorption in the silicon. Finally, electro-optical simulations are performed of solar cells employing the fabricated grating structures to estimate efficiency enhancement potential.

Contribution to energy consumption modelling and forecast in next generation access networks

La contribución del sector de las tecnologías de la información y las comunicaciones (TICs) al consumo de energía a nivel global se ha visto incrementada considerablemente en la última década al mismo tiempo que su relevancia dentro de la economía global. Se prevé que esta tendencia continúe debido al uso cada vez más intensivo de estas tecnologías. Una de las principales causas es el tráfico de datos de banda ancha generado por el uso de las redes de telecomunicaciones. De hecho como respuesta a esta demanda de recursos por parte de los usuarios, de la industria de las telecomunicaciones está iniciando el despliegue de las redes de nueva generación. En cualquier caso, el consumo de energía es un factor generalmente ausente del debate sobre el despliegue de estas tecnologías, a pesar de la posible repercusión que pueda llegar a tener en los costes y la sostenibilidad de estos proyectos. A lo largo de este trabajo se desarrollan modelos para evaluar el consumo energético de las redes de acceso de nueva generación (NGAN). Estos servirán tanto para llevar a cabo cálculos en un escenario global estático, como en cualquiera otro que determine la potencial evolución de la red de acceso a lo largo de su despliegue. Estos modelos combinan tres factores: la penetración prospectiva de cada una de las tecnologías de banda ancha analizadas, el tráfico generado por usuario y su futura evolución, y el perfil de consumo de energía de cada uno de los dispositivos de red desplegados. Tras evaluar los resultados derivados de la aplicación de los modelos en el caso demográfico específico de España, se obtienen conclusiones acerca de las diferencias tecnológicas en cuanto al consumo energético, sus implicaciones económicas, y la sensibilidad de los cálculos atendiendo a posibles modificaciones en los valores de referencia de diferentes parámetros de diseño. Se destaca por tanto el efecto en el consumo energético de los desarrollos tecnológicos, tecno-económicos, y de las decisiones en el ámbito regulatorio. Aunque como se ha dicho, se ha ejemplificado el cálculo para un caso particular, tanto los modelos como las conclusiones extraídas se pueden extrapolar a otros países similares.

An experimental and theoretical study of unsteady flow (gust) effects on structures

The gust wind tunnel at IDR, Universidad Politécnica de Madrid (UPM), has been enhanced and the impact of the modification has been characterized. Several flow quality configurations have been tested. The problems in measuring gusty winds with Pitot tubes have been considered. Experimental results have been obtained and compared with theoretically calculated results (based on potential flow theory). A theoretical correction term has been proposed for unsteady flow measurements obtained with Pitot tubes. The effect of unsteady flow on structures and laying bodies on the ground has been also considered. A theoretical model has been proposed for a semi-circular cylinder and experimental tests have been performed to study the unsteady flow effects, which can help in clarifying the phenomenon.

Damage mechanisms of 3D woven hybrid composites in tension. Testing, inspection and simulation

Delamination reduces the strenght of the composites, mainly in compression. Several methods exist to overcome this problem, but they are either not feasible for large scale production or too expensive. 3D composites are a promising solution.

Agent-based modeling and simulation for the design of the future european Air Traffic Management system: the experience of CASSIOPEIA

The SESAR (Single European Sky ATM Research) program is an ambitious re-search and development initiative to design the future European air traffic man-agement (ATM) system. The study of the behavior of ATM systems using agent-based modeling and simulation tools can help the development of new methods to improve their performance. This paper presents an overview of existing agent-based approaches in air transportation (paying special attention to the challenges that exist for the design of future ATM systems) and, subsequently, describes a new agent-based approach that we proposed in the CASSIOPEIA project, which was developed according to the goals of the SESAR program. In our approach, we use agent models for different ATM stakeholders, and, in contrast to previous work, our solution models new collaborative decision processes for flow traffic management, it uses an intermediate level of abstraction (useful for simulations at larger scales), and was designed to be a practical tool (open and reusable) for the development of different ATM studies. It was successfully applied in three stud-ies related to the design of future ATM systems in Europe.

Code assessment and modelling for Design Basis Accident Analysis of the European sodium fast reactor design. Part I: System description, modelling and benchmarking

The new reactor concepts proposed in the Generation IV International Forum (GIF) are conceived to improve the use of natural resources, reduce the amount of high-level radioactive waste and excel in their reliability and safe operation. Among these novel designs sodium fast reactors (SFRs) stand out due to their technological feasibility as demonstrated in several countries during the last decades. As part of the contribution of EURATOM to GIF the CP-ESFR is a collaborative project with the objective, among others, to perform extensive analysis on safety issues involving renewed SFR demonstrator designs. The verification of computational tools able to simulate the plant behaviour under postulated accidental conditions by code-to-code comparison was identified as a key point to ensure reactor safety. In this line, several organizations employed coupled neutronic and thermal-hydraulic system codes able to simulate complex and specific phenomena involving multi-physics studies adapted to this particular fast reactor technology. In the “Introduction” of this paper the framework of this study is discussed, the second section describes the envisaged plant design and the commonly agreed upon modelling guidelines. The third section presents a comparative analysis of the calculations performed by each organisation applying their models and codes to a common agreed transient with the objective to harmonize the models as well as validating the implementation of all relevant physical phenomena in the different system codes.

Parameter-based mechanism for unifying user interaction, applications and communication protocols

In the smart building control industry, creating a platform to integrate different communication protocols and ease the interaction between users and devices is becoming increasingly important. BATMP is a platform designed to achieve this goal. In this paper, the authors describe a novel mechanism for information exchange, which introduces a new concept, Parameter, and uses it as the common object among all the BATMP components: Gateway Manager, Technology Manager, Application Manager, Model Manager and Data Warehouse. Parameter is an object which represents a physical magnitude and contains the information about its presentation, available actions, access type, etc. Each component of BATMP has a copy of the parameters. In the Technology Manager, three drivers for different communication protocols, KNX, CoAP and Modbus, are implemented to convert devices into parameters. In the Gateway Manager, users can control the parameters directly or by defining a scenario. In the Application Manager, the applications can subscribe to parameters and decide the values of parameters by negotiating. Finally, a Negotiator is implemented in the Model Manager to notify other components about the changes taking place in any component. By applying this mechanism, BATMP ensures the simultaneous and concurrent communication among users, applications and devices.

Laser Shock Microforming of Thin Metal Sheets: Physical Principles, Modelling and Experimental Implementation

The increasing demands in MEMS fabrication are leading to new requirements in production technology. Especially the packaging and assembly require high accuracy in positioning and high reproducibility in combination with low production costs. Conventional assembly technology and mechanical adjustment methods are time consuming and expensive. Each component of the system has to be positioned and fixed. Also adjustment of the parts after joining requires additional mechanical devices that need to be accessible after joining. Accurate positioning of smallest components represents an up-to-date key assignment in micro-manufacturing. It has proven to be more time and cost efficient to initially assemble the components with widened tolerances before precisely micro-adjusting them in a second step.

Design and Simulation of Deep Nanometer SRAM Cells under Energy, Mismatch, and Radiation Constraints

La fiabilidad está pasando a ser el principal problema de los circuitos integrados según la tecnología desciende por debajo de los 22nm. Pequeñas imperfecciones en la fabricación de los dispositivos dan lugar ahora a importantes diferencias aleatorias en sus características eléctricas, que han de ser tenidas en cuenta durante la fase de diseño. Los nuevos procesos y materiales requeridos para la fabricación de dispositivos de dimensiones tan reducidas están dando lugar a diferentes efectos que resultan finalmente en un incremento del consumo estático, o una mayor vulnerabilidad frente a radiación. Las memorias SRAM son ya la parte más vulnerable de un sistema electrónico, no solo por representar más de la mitad del área de los SoCs y microprocesadores actuales, sino también porque las variaciones de proceso les afectan de forma crítica, donde el fallo de una única célula afecta a la memoria entera. Esta tesis aborda los diferentes retos que presenta el diseño de memorias SRAM en las tecnologías más pequeñas. En un escenario de aumento de la variabilidad, se consideran problemas como el consumo de energía, el diseño teniendo en cuenta efectos de la tecnología a bajo nivel o el endurecimiento frente a radiación. En primer lugar, dado el aumento de la variabilidad de los dispositivos pertenecientes a los nodos tecnológicos más pequeños, así como a la aparición de nuevas fuentes de variabilidad por la inclusión de nuevos dispositivos y la reducción de sus dimensiones, la precisión del modelado de dicha variabilidad es crucial. Se propone en la tesis extender el método de inyectores, que modela la variabilidad a nivel de circuito, abstrayendo sus causas físicas, añadiendo dos nuevas fuentes para modelar la pendiente sub-umbral y el DIBL, de creciente importancia en la tecnología FinFET. Los dos nuevos inyectores propuestos incrementan la exactitud de figuras de mérito a diferentes niveles de abstracción del diseño electrónico: a nivel de transistor, de puerta y de circuito. El error cuadrático medio al simular métricas de estabilidad y prestaciones de células SRAM se reduce un mínimo de 1,5 veces y hasta un máximo de 7,5 a la vez que la estimación de la probabilidad de fallo se mejora en varios ordenes de magnitud. El diseño para bajo consumo es una de las principales aplicaciones actuales dada la creciente importancia de los dispositivos móviles dependientes de baterías. Es igualmente necesario debido a las importantes densidades de potencia en los sistemas actuales, con el fin de reducir su disipación térmica y sus consecuencias en cuanto al envejecimiento. El método tradicional de reducir la tensión de alimentación para reducir el consumo es problemático en el caso de las memorias SRAM dado el creciente impacto de la variabilidad a bajas tensiones. Se propone el diseño de una célula que usa valores negativos en la bit-line para reducir los fallos de escritura según se reduce la tensión de alimentación principal. A pesar de usar una segunda fuente de alimentación para la tensión negativa en la bit-line, el diseño propuesto consigue reducir el consumo hasta en un 20 % comparado con una célula convencional. Una nueva métrica, el hold trip point se ha propuesto para prevenir nuevos tipos de fallo debidos al uso de tensiones negativas, así como un método alternativo para estimar la velocidad de lectura, reduciendo el número de simulaciones necesarias. Según continúa la reducción del tamaño de los dispositivos electrónicos, se incluyen nuevos mecanismos que permiten facilitar el proceso de fabricación, o alcanzar las prestaciones requeridas para cada nueva generación tecnológica. Se puede citar como ejemplo el estrés compresivo o extensivo aplicado a los fins en tecnologías FinFET, que altera la movilidad de los transistores fabricados a partir de dichos fins. Los efectos de estos mecanismos dependen mucho del layout, la posición de unos transistores afecta a los transistores colindantes y pudiendo ser el efecto diferente en diferentes tipos de transistores. Se propone el uso de una célula SRAM complementaria que utiliza dispositivos pMOS en los transistores de paso, así reduciendo la longitud de los fins de los transistores nMOS y alargando los de los pMOS, extendiéndolos a las células vecinas y hasta los límites de la matriz de células. Considerando los efectos del STI y estresores de SiGe, el diseño propuesto mejora los dos tipos de transistores, mejorando las prestaciones de la célula SRAM complementaria en más de un 10% para una misma probabilidad de fallo y un mismo consumo estático, sin que se requiera aumentar el área. Finalmente, la radiación ha sido un problema recurrente en la electrónica para aplicaciones espaciales, pero la reducción de las corrientes y tensiones de los dispositivos actuales los está volviendo vulnerables al ruido generado por radiación, incluso a nivel de suelo. Pese a que tecnologías como SOI o FinFET reducen la cantidad de energía colectada por el circuito durante el impacto de una partícula, las importantes variaciones de proceso en los nodos más pequeños va a afectar su inmunidad frente a la radiación. Se demuestra que los errores inducidos por radiación pueden aumentar hasta en un 40 % en el nodo de 7nm cuando se consideran las variaciones de proceso, comparado con el caso nominal. Este incremento es de una magnitud mayor que la mejora obtenida mediante el diseño de células de memoria específicamente endurecidas frente a radiación, sugiriendo que la reducción de la variabilidad representaría una mayor mejora. ABSTRACT Reliability is becoming the main concern on integrated circuit as the technology goes beyond 22nm. Small imperfections in the device manufacturing result now in important random differences of the devices at electrical level which must be dealt with during the design. New processes and materials, required to allow the fabrication of the extremely short devices, are making new effects appear resulting ultimately on increased static power consumption, or higher vulnerability to radiation SRAMs have become the most vulnerable part of electronic systems, not only they account for more than half of the chip area of nowadays SoCs and microprocessors, but they are critical as soon as different variation sources are regarded, with failures in a single cell making the whole memory fail. This thesis addresses the different challenges that SRAM design has in the smallest technologies. In a common scenario of increasing variability, issues like energy consumption, design aware of the technology and radiation hardening are considered. First, given the increasing magnitude of device variability in the smallest nodes, as well as new sources of variability appearing as a consequence of new devices and shortened lengths, an accurate modeling of the variability is crucial. We propose to extend the injectors method that models variability at circuit level, abstracting its physical sources, to better model sub-threshold slope and drain induced barrier lowering that are gaining importance in FinFET technology. The two new proposed injectors bring an increased accuracy of figures of merit at different abstraction levels of electronic design, at transistor, gate and circuit levels. The mean square error estimating performance and stability metrics of SRAM cells is reduced by at least 1.5 and up to 7.5 while the yield estimation is improved by orders of magnitude. Low power design is a major constraint given the high-growing market of mobile devices that run on battery. It is also relevant because of the increased power densities of nowadays systems, in order to reduce the thermal dissipation and its impact on aging. The traditional approach of reducing the voltage to lower the energy consumption if challenging in the case of SRAMs given the increased impact of process variations at low voltage supplies. We propose a cell design that makes use of negative bit-line write-assist to overcome write failures as the main supply voltage is lowered. Despite using a second power source for the negative bit-line, the design achieves an energy reduction up to 20% compared to a conventional cell. A new metric, the hold trip point has been introduced to deal with new sources of failures to cells using a negative bit-line voltage, as well as an alternative method to estimate cell speed, requiring less simulations. With the continuous reduction of device sizes, new mechanisms need to be included to ease the fabrication process and to meet the performance targets of the successive nodes. As example we can consider the compressive or tensile strains included in FinFET technology, that alter the mobility of the transistors made out of the concerned fins. The effects of these mechanisms are very dependent on the layout, with transistor being affected by their neighbors, and different types of transistors being affected in a different way. We propose to use complementary SRAM cells with pMOS pass-gates in order to reduce the fin length of nMOS devices and achieve long uncut fins for the pMOS devices when the cell is included in its corresponding array. Once Shallow Trench isolation and SiGe stressors are considered the proposed design improves both kinds of transistor, boosting the performance of complementary SRAM cells by more than 10% for a same failure probability and static power consumption, with no area overhead. While radiation has been a traditional concern in space electronics, the small currents and voltages used in the latest nodes are making them more vulnerable to radiation-induced transient noise, even at ground level. Even if SOI or FinFET technologies reduce the amount of energy transferred from the striking particle to the circuit, the important process variation that the smallest nodes will present will affect their radiation hardening capabilities. We demonstrate that process variations can increase the radiation-induced error rate by up to 40% in the 7nm node compared to the nominal case. This increase is higher than the improvement achieved by radiation-hardened cells suggesting that the reduction of process variations would bring a higher improvement.