Judd-Ofelt intensity parameters of Er3+ doped mixed alkali aluminophosphate glasses

Lithium sodium mixed alkali aluminophosphate glasses of the composition xNa(2)O-(15-x)Li2O-4B(2)O(3)-11Al(2)O(3)-5BaO-65P(2)O(5) (where x=0, 3.75, 7.5, 11.25 and 15 mol%) containing 0.5 mol% Er2O3 were prepared by melt quenching. The absorption spectra of Er3+ were studied from the experimental oscillator strengths and the Judd-Ofelt intensity parameters were obtained. The variations of Judd-Ofelt intensity parameters (Omega(2), Omega(4) and Omega(6)), experimental oscillator strengths of certain excited states of Er3+ and hypersensitive band positions with different mixed alkali content have been discussed in detail. It was found that there were similar effects of mixed alkali on both Judd-Ofelt intensity parameter 02 and the experimental oscillator strength of the hypersensitive transition, I-4(15/2) -> H-2(11/2). No shifts in the peak wavelength of the studied transitions were found in different glasses. (c) 2006 Elsevier B.V. All rights reserved.

Spectroscopic properties and Judd-Ofelt theory analysis of Dy3+ doped oxyfluoride silicate glass

Dy3+ doped oxyfluoride silicate glass was prepared and its optical absorption, 1.3 mu m emission, and upconversion luminescence properties were studied. Furthermore, the Judd-Ofelt [Phys. Rev. 127, 750 (1962); J. Chem. Phys. 37, 511 (1962)] intensity parameters, oscillator strengths, spontaneous transition probability, fluorescence branching ratio and radiative lifetime were calculated by Judd-Ofelt theory, while stimulated emission cross section of H-6(9/2)+F-6(11/2)-> H-6(15/2) transition was calculated by McCumber theory [Phys. Rev. A. 134, 299 (1964)]. According to the obtained Judd-Ofelt intensity parameters Omega(2)=2.69x10(-20) cm(2), Omega(4)=1.64x10(-20) cm(2), and Omega(6)=1.64x10(-20) cm(2), the radiative lifetime was calculated to be 810 mu s for 1.3 mu m emission, whose full width at half maximum and sigma(e) were 115 nm and 2.21x10(-20)cm(2), respectively. In addition, near infrared to visible upconversion luminescence was observed and evaluated. The results suggest that Dy3+ doped oxyfluoride silicate glass can be used as potential host material for developing broadband optical amplifiers and laser applications.

Effect of bismuth oxide on the thermal stability and Judd-Ofelt parameters of Er 3(+)/Yb3(+) co-doped aluminophosphate glasses

The Er3+/Yb3+ co-doped glasses with compositions of xBi(2)O(3)-(65-x)P2O5-4Yb(2)O(3)-11Al(2)O(3)-5BaO-15Na(2)O (where x = 0, 2.5, 5, 7.5 and 10 mol%) were prepared using the normal melt quench technique. The optical absorption spectra of the glasses were recorded in the wavelength range 300-1700 nm. The effect of Bi2O3 content on the thermal stability and absorption spectra of glasses was investigated. In addition, the Judd-Ofelt parameters and oscillator strengths were calculated by employing Judd-Ofelt theory. It was observed that the positions of the fundamental absorption edge and cut-off wavelength shifted towards red as the content of Bi2O3 increased. However, there were no red shifts found both in the peak wavelength and in the center of mass wavelength of all absorption bands with Bi2O3 content increasing. The results of Judd-Ofelt theory analysis showed that Judd-Ofelt parameters Omega(t), (t = 2, 4, 6) changed sharply when Bi2O3 concentration exceeded 5 mol%. The variation trends of experimental oscillator strength were similar with those of Judd-Ofelt parameters as function of Bi2O3 concentrations. Moreover, differential scanning calorimetry experiments showed that the increases of Bi2O3 content weakened the network structure and then lowered the thermal stability of the glasses. The spontaneous emission probability A(rad), branching ratio beta and the radiative lifetime tau(rad) were also calculated and analyzed. The stimulated emission cross-section of Er3+ was calculated according to the McCumber theory. It was found that the stimulated emission cross-section of Er3+ was monotonically increases with Bi2O3 content increasing. (C) 2006 Elsevier B.V. All rights reserved.

Upconversion emission in Er3+ doped novel bismuthate glass

Novel Er3+-doped bismuth lead strontiam glass was fabricated and characterized, and the absorption spectrum and upconversion spectrum of the glass were studied. The Judd-Ofelt intensity parameters Omega(t)(t = 2, 4, 6) were found to be Omega(2) = 3.27 x 10(-20) cm(2), Omega(4) = 1.15 x 10(-20) cm(2), and Omega(6) = 0.38 x 10(-20) cm(2). The oscillator strength, the spontaneous transition probabilities, the fluorescence branching ratios, and excited state lifetimes were also measured and calculated. The upconversion emission intensity varies with the power of infrared excitation intensity. A plot of log I-up vs log I-IR yields a straight line with slope 1.86, 1.88 and 1.85, corresponding to 525, 546, and 657 nm emission bands, respectively, which indicates that a two-photon process for the red and green emission.

The influence of OH groups on laser performance in phosphate glasses

Because of the influence of OH groups in phosphate glasses on the radiation of rare-earth ions, the laser performance is degraded. The laser efficiency and the small signal gain experiment of several phosphate glass samples have been done, the concentration of OH groups in glasses was calculated from the measured absorption coefficient at 3.47 μm. It is shown that the concentration of OH groups in phosphate glasses can seriously influence the laser output characteristics, and the OH groups have worse influence on the laser amplifier than laser oscillator.

不同Yb掺杂量的Yb：Y3Al5O12晶体的光谱分析

采用提拉法生长了Yb^3＋掺杂量分别为5．4at％，16．3at％，27．1at％，53．6at％和100at％的Yb：Y3Al5O12晶体．系统地表征和分析了Yb^3＋掺杂量对晶体吸收光谱和荧光光谱的影响．随着Yb^3＋掺杂量的增加，各峰值吸收系数呈线性增加的趋势．应用Smakula公式计算了各吸收峰对应的振荡强度，并分析了Yb^3＋掺杂量对振荡强度的影响．当Yb^3＋掺杂量增加到27．1at％时观察到了荧光猝灭现象；当Yb^3＋掺杂量增加到53．6at％时，荧光光谱的线形发生了很大的变化。

7.3 W of single-frequency output power at 2.09 μm from an Ho:YAG monolithic nonplanar ring laser

Single-frequency output power of 7.3 W at 2.09 mu m from a monolithic Ho:YAG nonplanar ring oscillator (NPRO) is demonstrated. Resonantly pumped by a Tm-doped fiber laser at 1.91 mu m, the Ho:YAG NPRO produces 71% of slope efficiency with respect to absorbed pump power and nearly diffraction-limited output with a beam quality parameter of M-2 approximate to 1.1. (c) 2008 Optical Society of America

利用窄得-奥菲特理论研究Tm:Lu_2SiO_5晶体的光谱特性

采用丘克拉斯基(Czochralski)技术生长了掺铥硅酸镥(Tm∶Lu2SiO5,Tm∶LSO)晶体;测量了LSO晶体在室温下的非偏振吸收光谱和非偏振荧光光谱;利用窄得-奥菲特(Judd-Ofelt)理论计算了Tm∶LSO晶体的窄得-奥菲特强度参数、振子强度、自发辐射概率、辐射寿命、积分吸收截面和积分发射截面.Tm∶LSO晶体的强度参数为Ω2=9.1355×10-20cm2,Ω4=8.4103×10-20cm2,Ω6=1.5908×10-20cm2;Tm∶LSO晶体在1.9μm附近有明显的发射峰(3F4→3H6跃迁),相应的辐射寿命为2.03 ms,积分发射截面为5.81×10-18cm2,半峰全宽(FWHM)为250 nm.用Tm∶LSO晶体在77 K温度下实现了激光运转.利用792 nm的激光二极管(LD)作为抽运源,获得中心波长为1960 nm的激光输出,抽运阈值为2.13 kW/cm2.

Dynamical behavior of damped driven coupled single electron simple harmonic oscillators

Coherent coupling between a large number of qubits is the goal for scalable approaches to solid state quantum information processing. Prototype systems can be characterized by spectroscopic techniques. Here, we use pulsed-continuous wave microwave spectroscopy to study the behavior of electrons trapped at defects within the gate dielectric of a sol-gel-based high-k silicon MOSFET. Disorder leads to a wide distribution in trap properties, allowing more than 1000 traps to be individually addressed in a single transistor within the accessible frequency domain. Their dynamical behavior is explored by pulsing the microwave excitation over a range of times comparable to the phase coherence time and the lifetime of the electron in the trap. Trap occupancy is limited to a single electron, which can be manipulated by resonant microwave excitation and the resulting change in trap occupancy is detected by the change in the channel current of the transistor. The trap behavior is described by a classical damped driven simple harmonic oscillator model, with the phase coherence, lifetime and coupling strength parameters derived from a continuous wave (CW) measurement only. For pulse times shorter than the phase coherence time, the energy exchange between traps, due to the coupling, strongly modulates the observed drain current change. This effect could be exploited for 2-qubit gate operation. The very large number of resonances observed in this system would allow a complex multi-qubit quantum mechanical circuit to be realized by this mechanism using only a single transistor.

Performance of CMOS Devices in Silicon-on-Sapphire Films After Solid-Phase Epitaxial Growth With Rapid Electron-Beam Heating

The crystal quality of 0.3-μm-thick as-grown epitaxial silicon-on-sapphire (SOS) was improved using solid-phase epitaxy (SPE) by implantation with silicon to 1015 ions/cm2 at 175 keV and rapid annealing using electron-beam heating, n-channel and p-channel transistormobilities increased by 31 and 19 percent, respectively, and a reduction in ring-oscillator stage delay confirmed that crystal defects near the upper silicon surface had been removed. Leakage in n-channel transistors was not significantly affected by the regrowth process but for p-channel transistors back-channel leakage was considerably greater than for the control devices. This is attributed to aluminum released by damage to the sapphire during silicon implantation. © 1985 IEEE

Fabrication and testing of a high resolution extensometer based on resonant MEMS strain sensors

A novel type of linear extensometer with exceptionally high resolution of 4 nm based on MEMS resonant strain sensors bonded on steel and operating in a vacuum package is presented. The tool is implemented by means of a steel thin bar that can be pre-stressed in tension within two fixing anchors. The extension of the bar is detected by using two vacuum-packaged resonant MEMS double- ended tuning fork (DETF) sensors bonded on the bar with epoxy glue, one of which is utilized for temperature compensation. Both sensors are driven by a closed loop self-oscillating transresistance amplifier feedback scheme implemented on a PCB (Printed Circuit Board). On the same board, a microcontroller-based frequency measurement circuit is also implemented, which is able to count the square wave fronts of the MEMS oscillator output with a resolution of 20 nsec. The system provides a frequency noise of 0.2 Hz corresponding to an extension resolution of 4 nm for the extensometer. Nearly perfect temperature compensation of the frequency output is achieved in the temperature range 20-35 C using the reference sensor. © 2011 IEEE.

Electrically coupled MEMS oscillators

In this paper, we demonstrate synchronization of two electrically coupled MEMS oscillators incorporating nearly identical silicon tuning fork microresonators. It is seen that as the output of the oscillators are coupled, they exhibit a synchronized response wherein the output amplitudes and signal-to-noise ratios of the two oscillators are improved relative to the case where the two oscillators are uncoupled. The observed output frequency of each oscillator before coupling is 219402.4 Hz and 219403.6 Hz respectively. In contrast, when the oscillators are driven simultaneously, they lock at a common output frequency of 219401.3 Hz and their outputs are found to be out-of-phase with respect to each other. A 6 dBm gain in output power and a reduction in the phase fluctuations of the output signal are observed for the coupled oscillators compared to the case when the oscillators are uncoupled. © 2011 IEEE.

FIRST PASSAGE APPROXIMATION FOR NORMAL STATIONARY RANDOM PROCESSES.

A new approximate solution for the first passage probability of a stationary Gaussian random process is presented which is based on the estimation of the mean clump size. A simple expression for the mean clump size is derived in terms of the cumulative normal distribution function, which avoids the lengthy numerical integrations which are required by similar existing techniques. The method is applied to a linear oscillator and an ideal bandpass process and good agreement with published results is obtained. By making a slight modification to an existing analysis it is shown that a widely used empirical result for the asymptotic form of the first passage probability can be deduced theoretically.

EARLY FLOWERING4 recruitment of EARLY FLOWERING3 in the nucleus sustains the Arabidopsis circadian clock

The plant circadian clock is proposed to be a network of several interconnected feedback loops, and loss of any component leads to changes in oscillator speed. We previously reported that Arabidopsis thaliana EARLY FLOWERING4 (ELF4) is required to sustain this oscillator and that the elf4 mutant is arrhythmic. This phenotype is shared with both elf3 and lux. Here, we show that overexpression of either ELF3 or LUX ARRHYTHMO (LUX) complements the elf4 mutant phenotype. Furthermore, ELF4 causes ELF3 to form foci in the nucleus. We used expression data to direct a mathematical position of ELF3 in the clock network. This revealed direct effects on the morning clock gene PRR9, and we determined association of ELF3 to a conserved region of the PRR9 promoter. A cis-element in this region was suggestive of ELF3 recruitment by the transcription factor LUX, consistent with both ELF3 and LUX acting genetically downstream of ELF4. Taken together, using integrated approaches, we identified ELF4/ELF3 together with LUX to be pivotal for sustenance of plant circadian rhythms. © 2012 American Society of Plant Biologists.

74-fs nanotube-mode-locked fiber laser

We report an erbium-doped, nanotube mode-locked fiber oscillator generating 74 fs pulses with 63 nm spectral width. This all-fiber-based laser is a simple, low-cost source for time-resolved optical spectroscopy, as well as for many applications where high resolution driven by short pulse durations is required. © 2012 American Institute of Physics.