MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate

High-mobility Al0.3Ga0.7N/AlN/GaN high electron mobility transistors (HEMT) structure has been grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrate. Electron mobility of 2185 cm(2)/V s at room temperature and 15,400 cm(2)/V s at 80 K with 2DEG density of 1.1 X 10(13) cm(-2) are achieved. The corresponding sheet resistance of the HEMT wafer is 258.7 Omega/sq. The AlN interfacial layer between the GaN buffer and the AlGaN barrier layer reduces the alloy disorder scattering. X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM) measurements have been conducted, and confirmed that the wafer has a high crystal quality. (c) 2006 Elsevier B.V. All rights reserved.

Effects of ZnO interlayers on thick GaN/Si film prepared by RF magnetron sputtering

We have successfully prepared a high-quality 2 mu m-thick GaN film with three inserted 30 nm-thick ZnO interlayers on Si (111) substrate without cracks by magnetron sputtering. The effects of the thickness and number of ZnO interlayers on the crystal quality of the GaN films were studied. It was found that the GaN crystal quality initially improved with the increase of the thickness of ZnO interlayers, but deteriorated quickly when the thickness exceeded 30 nm. Multiple ZnO interlayers were used as an effective means to further improve the crystal quality of the GaN film. By increasing the number of interlayers up to three, the cracks can be constrained to a certain extent, and the crystal quality of the GaN film greatly improved. (c) 2006 Elsevier B.V. All rights reserved.

Compact SOI arrayed waveguide grating demultiplexer with broad spectral response

A compact eight-channel flat spectral response arrayed waveguide grating (AWG) multiplexer based on siliconon-insulator (SOI) materials has been fabricated on the planar lightwave circuit (PLC). The 1-dB bandwidth of 48 GHz and 3-dB bandwidth of 69 GHz are obtained for the 100 GHz channel spacing. Not only non-adjacent crosstalk but also adjacent crosstalk are less than -25 dB. The on-chip propagation loss range is from 3.5 to 3.9 dB, and the 2 total device size is 1.5 x 1.0 cm(2). (c) 2005 Elsevier B.V. All rights reserved.

Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111)

The influences of AlN buffer thickness on the optical and the crystalline properties of metalorganic chemical vapor deposition wurtzite GaN layers on Si(I 11) substrate have been investigated. High-resolution X-ray diffraction and photoluminescence measurement reveal that the thickness of AlN buffer exerts a strong influence on the distribution of dislocation and stress in GaN epilayer. The evidence is further reinforced by atomic force microscopic observation of AlN nucleation process. The optimum thickness of AlN buffer to effectively suppress Si diffusion has been determined by secondary-ion mass spectroscopy to be in the range of 13-20 nm. In addition, it is found that appropriate Si diffusion in AlN buffer helps to compensate the tensile strain in GaN, which subsequently improves the optical quality of GaN on Si(I 1, 1), and reduces the cracks over the GaN surface. (C) 2003 Elsevier B.V. All rights reserved.

Mechanism on exciton-mediated energy transfer in erbium-doped silicon

Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.

A VSLMS Style Tap-length Learning Algorithm for Structure Adaptation

Compared with the ordinary adaptive filter, the variable-length adaptive filter is more efficient (including smaller., lower power consumption and higher computational complexity output SNR) because of its tap-length learning algorithm, which is able to dynamically adapt its tap-length to the optimal tap-length that best balances the complexity and the performance of the adaptive filter. Among existing tap-length algorithms, the LMS-style Variable Tap-Length Algorithm (also called Fractional Tap-Length Algorithm or FT Algorithm) proposed by Y.Gong has the best performance because it has the fastest convergence rates and best stability. However, in some cases its performance deteriorates dramatically. To solve this problem, we first analyze the FT algorithm and point out some of its defects. Second, we propose a new FT algorithm called 'VSLMS' (Variable Step-size LMS) Style Tap-Length Learning Algorithm, which not only uses the concept of FT but also introduces a new concept of adaptive convergence slope. With this improvement the new FT algorithm has even faster convergence rates and better stability. Finally, we offer computer simulations to verify this improvement.

Generalized Viscoplastic Modeling of Debris Flow

Various concepts have been proposed or used in the development of rheological models for debris flow. The earliest model developed by Bagnold was based on the concept of the “dispersive” pressure generated by grain collisions. Bagnold’s concept appears to be theoretically sound, but his empirical model has been found to be inconsistent with most theoretical models developed from non-Newtonian fluid mechanics. Although the generality of Bagnold’s model is still at issue, debris-flow modelers in Japan have generally accepted Takahashi’s formulas derived from Bagnold’s model. Some efforts have recently been made by theoreticians in non-Newtonian fluid mechanics to modify or improve Bagnold’s concept or model. A viable rheological model should consist both of a rate-independent part and a rate-dependent part. A generalized viscoplastic fluid (GVF) model that has both parts as well as two major rheological properties (i.e., the normal stress effect and soil yield criterion) is shown to be sufficiently accurate, yet practical, for general use in debris-flow modeling. In fact, Bagnold’s model is found to be only a particular case of the GVF model. Analytical solutions for (steady) uniform debris flows in wide channels are obtained from the GVF model based on Bagnold’s simplified assumption of constant grain concentration.

用于IP追踪的包标记的注记

拒绝服务攻击是一类最难对付的网络安全问题.近来,人们提出了多种对策.其中由Savage等人提出的一类基于概率的包标记方案比较有研究价值.这里先对拒绝服务攻击的对策作一简述,然后分析了几种包标记方案,指出了它们的一些缺陷,并提出了一些改进措施.其中,对基本型概率包标记方案的一个修改使得计算量大大减少.

NUSH分组密码的线性密码分析

NUSH是NESSIE公布的17个候选分组密码之一.对不同分组长度和密钥规模的NUSH进行了线性密码分析,每一种攻击的复杂度δ由它所需的数据复杂度ε和处理复杂度η组成,记为δ=(ε,η).对于分组长度为64 bit的NUSH,当密钥为128 bit时,3种攻击的复杂度分别为(258,2124)、(260,278)和(262,255);当密钥为192 bit时,3种攻击的复杂度分别为(258,2157)、(260,296)和(262,258);当密钥为256 bit时,3种攻击的复杂度分别为(258,2125)、(260,278)和(262,253).对于分组长度为128 bit的NUSH,当密钥为128bit时,3种攻击的复杂度分别为(2122,295)、(2124,257)和(2126,252);当密钥为192 bit时,3种攻击的复杂度分别为(2122,2142)、(2124,275)和(2126,258);当密钥为256 bit时,3种攻击的复杂度分别为(2122,2168)、(1224,281)和(2126,264).对于分组长度为256 bit的NUSH,当密钥为128 bit时,两种攻击的复杂度分别为(2252,2122)和(2254,2119);当密钥为192 bit时,两种攻击的复杂度分别为(2252,2181)和(2254,2177);当密钥为256 bit时,两种攻击的复杂度分别为(2252,2240)和(2254,2219).这些结果显示NUSH对线性密码分析是不免疫的,而且密钥规模的增大不能保证安全性的提高.

基于TPM的可信文件系统CIVFS的研究和实现

本文提出一种利用可信计算技术增强文件系统可信性的方法，以Linux为基础，设计实现了一个可信文件系统原型CIVFS。CIVFS是一个结合加密和完整性校验两种保护措施的文件系统，它借助堆式文件系统技术，嵌入在Linux内核中，添加了文件加密和完整性校验模块，利用TPM芯片提供的可信计算和安全存储等功能，增强了对系统安全组件和数据的安全保护。

基于TPM的可信文件系统CIVFS的研究和实现

本文提出一种利用可信计算技术增强文件系统可信性的方法，以Linux为基础，设计实现了一个可信文件系统原型CIVFS。CIVFS是一个结合加密和完整性校验两种保护措施的文件系统，它借助堆式文件系统技术，嵌入在Linux内核中，添加了文件加密和完整性校验模块，利用TPM芯片提供的可信计算和安全存储等功能，增强了对系统安全组件和数据的安全保护。

复制的移动数据库系统事务级同步处理策略

同步处理技术是保持复制的移动数据库系统一致性的一项关键技术,但现有的事务级同步处理算法存在着一定的局限性.为了克服这些缺陷,并增强其实用性,提出了一种新的移动数据库同步处理模型──基于双时间印的事务级同步(DTSTLS)模型.DTSTLS模型采用了一种三级复制体系结构,系统可以直接使用通用的数据库产品作为其数据库服务器,因此具有良好的可扩充性.作为一种异步的多主副本复制方法,DTSTLS模型允许移动计算机在断连的情况下存取本地副本,从而造成系统短暂的不一致,重新连接时进行冲突检测及同步处理,使系统重新收敛于一致性的状态.此外,通过一种独特的时间印处理策略,DTSTLS模型减少了通信代价,并降低了资源消耗.实验结果表明,DTSTLS模型提高了移动数据库系统的资源利用效率,保证了事务调度的可串行性和数据库的一致性.

一种面向基于属性存取的文件系统的设计与实现

基于属性的存取，对于在包含不同来源的大量文件的系统中进行有效的信息管理来说，是一种非常具有吸引力的特性。然而尽管在相当长的一段时间内其价值已广为人知，该特性的真正有实用价值的实现仍然非常之少。本文探讨了实现该特性时面临的主要挑战，以及它们是怎样在一种专为此目的设计的文件系统中，通过成功的应用各种原则而被妥善处理。

城市生活有机垃圾厌氧降解的过程机理与工程应用研究

首先进行城市生活有机垃圾典型组分的厌氧发酵产甲烷和产氢特性研究，在此基础上，设计厌氧发酵联产氢气和甲烷的组合工艺提高能源回收效率，并采用厨余垃圾和废纸联合厌氧消化的方式避免厨余垃圾单独厌氧消化的挥发性脂肪酸抑制。其次，结合国内近年出现的城市生活垃圾分选技术，分别以机械干分选有机垃圾和水分选有机垃圾为原料进行厌氧发酵产甲烷实验，并根据实验结果设计日处理500吨城市生活垃圾厌氧沼气工程及进行经济性评价。主要结论如下：（1）糖和淀粉类的生化产甲烷能力为260 mL/gVS，纤维素，粗纤维、蛋白类和脂类分别为244、145、258 、757 mL/gVS；蛋白质类原料在厌氧消化过程中容易形成“抑制型稳态”；脂类原料容易导致长链脂肪酸抑制。（2）碳水化合物（糖、淀粉和纤维素）是最佳的厌氧发酵制氢原料，蛋白类、脂类和木质纤维类均不适宜作为厌氧发酵制氢原料。采用厌氧发酵联产氢气和甲烷的组合工艺可以显著提高能源回收率。（3）厨余垃圾单独厌氧发酵容易受到VFAs的强烈抑制，采用厨余垃圾与废纸联合厌氧发酵，能够避免VFAs抑制。（4）水分选有机垃圾的生物可降解性优于机械干分选有机垃圾，在原料TS浓度为11%~16%时的甲烷产率为273~314 L/kgVS。（5）国家财政补贴，税收优惠和CDM额外收益决定了城市生活垃圾的厌氧消化与热电肥联产工程的经济可行性。