969 resultados para 2-DIMENSIONAL ELECTRON-GAS
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The flow, heat and mass transfer on the unsteady laminar incompressible boundary layer in micropolar fluid at the stagnation point of a 2-dimensional and an axisymmetric body have been studied when the free stream velocity and the wall temperature vary arbitrarily with time. The partial defferential equations governing the flow have been solved numerically using a quasilinear finite-difference scheme. The skin friction, microrotation gradient and heat transfer parameters are found to be strongly dependent on the coupling parameter, mass transfer and time, whereas the effect of the microrotation parameter on the skin friction and heat transfer is rather weak, but microrotation gradient is strongly affected by it. The Prandtl number and the variation of the wall temperature with time affect the heat-transfer very significantly but the skin friction and micrortation gradient are unaffected by them.
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An exact expression for the calculation of gaussian path integrals involving non-local potentials is given. Its utility is demonstrated by using it to evaluate a path integral arising in the study of an electron gas in a random potential.
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We present a comparative study of the low temperature electrical transport properties of the carbon matrix containing iron nanoparticles and the films. The conductivity of the nanoparticles located just below the metal-insulator transition exhibits metallic behavior with a logarithmic temperature dependence over a large temperature interval. The zero-field conductivity and the negative magnetoresistance, showing a characteristic upturn at liquid helium temperature, are consistently explained by incorporating the Kondo relation and the two dimensional electron-electron interaction. The films, in contrast, exhibit a crossover of the conductivity from power-law dependence at high temperatures to an activated hopping law dependence in the low temperature region. The transition is attributed to changes in the energy dependence of the density of states near the Fermi level. The observed magnetoresistance is discussed in terms of quantum interference effect on a three-dimensional variable range hopping mechanism.
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Galerkin representations and integral representations are obtained for the linearized system of coupled differential equations governing steady incompressible flow of a micropolar fluid. The special case of 2-dimensional Stokes flows is then examined and further representation formulae as well as asymptotic expressions, are generated for both the microrotation and velocity vectors. With the aid of these formulae, the Stokes Paradox for micropolar fluids is established.
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Anisotropic Gaussian Schell-model (AGSM) fields and their transformation by first-order optical systems (FOS’s) forming Sp(4,R) are studied using the generalized pencils of rays. The fact that Sp(4,R), rather than the larger group SL(4,R), is the relevant group is emphasized. A convenient geometrical picture wherein AGSM fields and FOS’s are represented, respectively, by antisymmetric second-rank tensors and de Sitter transformations in a (3+2)-dimensional space is developed. These fields are shown to separate into two qualitatively different families of orbits and the invariants over each orbit, two in number, are worked out. We also develop another geometrical picture in a (2+1)-dimensional Minkowski space suitable for the description of the action of axially symmetric FOS’s on AGSM fields, and the invariants, now seven in number, are derived. Interesting limiting cases forming coherent and quasihomogeneous fields are analyzed.
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A simplified yet analytical approach on few ballistic properties of III-V quantum wire transistor has been presented by considering the band non-parabolicity of the electrons in accordance with Kane's energy band model using the Bohr-Sommerfeld's technique. The confinement of the electrons in the vertical and lateral directions are modeled by an infinite triangular and square well potentials respectively, giving rise to a two dimensional electron confinement. It has been shown that the quantum gate capacitance, the drain currents and the channel conductance in such systems are oscillatory functions of the applied gate and drain voltages at the strong inversion regime. The formation of subbands due to the electrical and structural quantization leads to the discreetness in the characteristics of such 1D ballistic transistors. A comparison has also been sought out between the self-consistent solution of the Poisson's-Schrodinger's equations using numerical techniques and analytical results using Bohr-Sommerfeld's method. The results as derived in this paper for all the energy band models gets simplified to the well known results under certain limiting conditions which forms the mathematical compatibility of our generalized theoretical formalism.
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Poly(3,4-ethylenedioxy)thiophene (PEDOT) doped with tosylate ion (PEDOT-tosylate or VPP PEDOT) was synthesized by vapor phase polymerization (VPP) technique on glass as well as on glass/ITO and the electrochromic properties were investigated. Compared with that of PEDOT-PSS spin-coated on glass/ITO, the studies showed that VPP PEDOT has a lower work function and better electrochromic properties. The magneto and AC transport properties studies were done on VPP PEDOT coated on glass substrate. The system shows 2-dimensional variable range hopping and wave function shrinkage of charge carriers.
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Within the Grassmannian U(2N)/U(N) x U(N) nonlinear sigma-model representation of localization, one can study the low-energy dynamics of both a free and interacting electron gas. We study the crossover between these two fundamentally different physical problems. We show how the topological arguments for the exact quantization of the Hall conductance are extended to include the Coulomb interaction problem. We discuss dynamical scaling and make contact with the theory of variable range hopping. (C) 2005 Pleiades Publishing, Inc.
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Formation of oxygen radicals during reduction of H2O2 or diperoxovanadate with vanadyl sulfate or ferrous sulfate was indicated by the 1:2:2:1 electron spin resonance (ESR) signals of the DMPO adduct typical of standard radical dotOH radical. Signals derived from diperoxovanadate remained unchanged in the presence of ethanol in contrast to those from H2O2. This gave the clue that they represent a different radical, possibly radical dotOV(O2)2+, formed on breaking a peroxo-bridge of diperoxovanadate complex. The above reaction mixtures evolved dioxygen or, when NADH was present, oxidized it rapidly which was accompanied by consumption of dioxygen. Operation of a cycle of peroxovanadates including this new radical is suggested to explain these redox activities both with vanadyl and ferrous sulfates. It can be triggered by ferrous ions released from cellular stores in the presence of catalytic amounts of peroxovanadates.
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We demonstrate a new and simple route to fabricate highly dense arrays of hexagonally close packed inorganic nanodots using functional diblock copolymer (PS-b-P4VP) thin films. The deposition of pre-synthesized inorganic nanoparticles selectively into the P4VP domains of PS-b-P4VP thin films, followed by removal of the polymer, led to highly ordered metallic patterns identical to the order of the starting thin film. Examples of Au, Pt and Pd nanodot arrays are presented. The affinity of the different metal nanoparticles towards P4VP chains is also understood by extending this approach to PS-b-P4VP micellar thin films. The procedure used here is simple, eco-friendly, and compatible with the existing silicon-based technology. Also the method could be applied to various other block copolymer morphologies for generating 1-dimensional (1D) and 2-dimensional (2D) structures. (c) 2010 Elsevier Ltd. All rights reserved.
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As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe(+) ion beam to an ion fluence of about 10(16) ions-cm(-2). Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti(5)Si(3) intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.
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As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe+ ion beam to an ion fluence of about 1016 ions-cm−2. Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti5Si3 intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.
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In this work, we evaluate performance of a real-world image processing application that uses a cross-correlation algorithm to compare a given image with a reference one. The algorithm processes individual images represented as 2-dimensional matrices of single-precision floating-point values using O(n4) operations involving dot-products and additions. We implement this algorithm on a nVidia GTX 285 GPU using CUDA, and also parallelize it for the Intel Xeon (Nehalem) and IBM Power7 processors, using both manual and automatic techniques. Pthreads and OpenMP with SSE and VSX vector intrinsics are used for the manually parallelized version, while a state-of-the-art optimization framework based on the polyhedral model is used for automatic compiler parallelization and optimization. The performance of this algorithm on the nVidia GPU suffers from: (1) a smaller shared memory, (2) unaligned device memory access patterns, (3) expensive atomic operations, and (4) weaker single-thread performance. On commodity multi-core processors, the application dataset is small enough to fit in caches, and when parallelized using a combination of task and short-vector data parallelism (via SSE/VSX) or through fully automatic optimization from the compiler, the application matches or beats the performance of the GPU version. The primary reasons for better multi-core performance include larger and faster caches, higher clock frequency, higher on-chip memory bandwidth, and better compiler optimization and support for parallelization. The best performing versions on the Power7, Nehalem, and GTX 285 run in 1.02s, 1.82s, and 1.75s, respectively. These results conclusively demonstrate that, under certain conditions, it is possible for a FLOP-intensive structured application running on a multi-core processor to match or even beat the performance of an equivalent GPU version.
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We address a physics-based simplified analytical formulation of the diffusive electrical resistance ( (Omega)) and Seebeck coefficient () in a PbTe nanowire dominated by acoustic phonon scattering under the presence of a low static longitudinal electric field. The use of a second-order nonparabolic electron energy band structure involving a geometry-dependent band gap has been selected in principle to demonstrate that the electron mean free path (MFP) in such a system can reach as low as about 8 nm at room temperature for a 10-nm-wide PbTe nanowire. This is followed by the formulation of the carrier back-scattering coefficient for determination of (Omega) and as functions of wire dimensions, temperature, and the field, respectively. The present analytical formulation agrees well with the available experimental data and may find extensive use in determination of various electrothermal transport phenomena in PbTe-based one-dimensional electron devices.
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Metallic and other type of coatings on fiber Bragg grating (FBG) sensors alter their sensitivity with thermal and mechanical stress while protecting the fragile optical fiber in harsh sensing surroundings. The behavior of the coated materials is unique in their response to thermal and mechanical stress depending on the thickness and the mode of coating. The thermal stress during the coating affects the temperature sensitivity of FBG sensors. We have explored the thermal response of FBGs coated with Al and Pb to an average thickness of 80 nm using flash evaporation technique where the FBG sensor is mounted in a region at room temperature in an evacuated chamber having a pressure of 10(6) Torr which will minimize any thermal stress during the coating process. The coating thickness is chosen in the nanometer region with the aim to study thermal behavior of nanocoatings and their effect on FBG sensitivity. The sensitivity of FBGs is evaluated from the wavelengths recorded using an optical sensing interrogator sm 130 (Micron Optics) from room temperature to 300 degrees C both during heating and cooling. It is observed that the sensitivity of the metal coated fibers is better than the reference FBG with no coating for the entire range of temperature. For a coating thickness of 80 nm, Al coated FBG is more sensitive than the one coated with Pb up to 170 degrees C and it reverses at higher temperatures. This point is identified as a reversible phase transition in Pb monolayers as the 2-dimensional aspects of the metal layers are dominant in the nanocoatings of Pb. On cooling, the phase transition reverses and the FBGs return to the original state and for repeated cycles of heating and cooling the same pattern is observed. Thus the FBG functions as a sensor of the phase transitions of the coatings also. (C) 2012 Elsevier Inc. All rights reserved.