Reactive hot pressing of Ti-B-C and Ti-C at 1200 degrees C

Stoichiometric and non-stoichiometric powder mixtures of Ti-B4C and Ti-C with 1 wt% Ni were reactively hot pressed at 40 MPa, 1200 degrees C for 30 min. In both systems, the combined presence of Ni and non-stoichiometry enabled complete densification. While in Ti-C, non-stoichiometry by itself plays a significant role in promoting densification, the formation of intermediate borides in Ti-B4C powder mixtures requires the additional presence of Ni which promotes full reaction through the formation of a transient liquid as established previously in Ti-BN powder mixtures.

Deformation mechanisms during superplastic testing of Ti-6Al-4V-0.1B alloy

Superplastic tensile tests on warm rolled and optimally annealed boron modified alloy Ti-6Al-4V-0.1B at a temperature of 850 degrees C and initial strain rate of 3 x 10(-4) s(-1) results in a higher elongation (similar to 500%) compared to the base alloy Ti-6Al-4V (similar to 400%). The improvement in superplasticity has been attributed to enhanced contribution from interfacial boundary sliding to the overall deformation for the boron modified alloy. The boundary sliding was facilitated by the starting microstructure which predominantly contains small equiaxed primary a grains with narrow size distribution. Dynamic processes such as coarsening and globularization of primary a phase occur under the test condition but do not significantly contribute to the observed difference in superplasticity between the two alloys. In spite of cavitation takes place around the TiB particles during deformation, they do not cause macroscopic cracking and early fracture by virtue of the cavities being extremely localized. Localized cavitation is found to correlate with increased material transfer due to faster diffusion.

Deposition and characterization of pure and Cd doped SnO2 thin films by the nebulizer spray pyrolysis (NSP) technique

Pure and cadmium doped tin oxide thin films were deposited on glass substrates from aqueous solution of cadmium acetate, tin (IV) chloride and sodium hydroxide by the nebulizer spray pyrolysis (NSP) technique. X-ray diffraction reveals that all films have tetragonal crystalline structure with preferential orientation along (200) plane. On application of the Scherrer formula, it is found that the maximum size of grains is 67 nm. Scanning electron microscopy shows that the grains are of rod and spherical in shape. Energy dispersive X-ray analysis reveals the average ratio of the atomic percentage of pure and Cd doped SnO2 films. The electrical resistivity is found to be 10(2) Omega cm at higher temperature (170 degrees C) and 10(3) Omega cm at lower temperature (30 degrees C). Optical band gap energy was determined from transmittance and absorbance data obtained from UV-vis spectra. Optical studies reveal that the band gap energy decreases from 3.90 eV to 3.52 eV due to the addition of Cd as dopant with different concentrations.

Microstructure and texture evolution during sub-transus thermomechanical processing of Ti-6Al-4V-0.1B alloy: part I. hot rolling in (alpha plus beta) phase field

In the current study, the evolution of microstructure and texture has been studied for Ti-6Al-4V-0.1B alloy during sub-transus thermomechanical processing. This part of the work deals with the deformation response of the alloy by rolling in the (alpha + beta) phase field. The (alpha + beta) annealing behavior of the rolled specimen is communicated in part II. Rolled microstructures of the alloys exhibit either kinked or straight alpha colonies depending on their orientations with respect to the principal rolling directions. The Ti-6Al-4V-0.1B alloy shows an improved rolling response compared with the alloy Ti-6Al-4V because of smaller alpha lamellae size, coherency of alpha/beta interfaces, and multiple slip due to orientation factors. Accelerated dynamic globularization for this alloy is similarly caused by the intralamellar transverse boundary formation via multiple slip and strain accumulation at TiB particles. The (0002)(alpha) pole figures of rolled Ti-6Al-4V alloy shows ``TD splitting'' at lower rolling temperatures because of strong initial texture. Substantial beta phase mitigates the effect of starting texture at higher temperature so that ``RD splitting'' characterizes the basal pole figure. Weak starting texture and easy slip transfer for Ti-6Al-4V-0.1B alloy produce simultaneous TD and RD splittings in basal pole figures at all rolling temperatures.

Microstructure and texture evolution during sub-transus thermo-mechanical processing of Ti-6Al-4V-0.1B alloy: part II. static annealing in (alpha plus beta) regime

The first part of this study describes the evolution of microstructure and texture in Ti-6Al-4V-0.1B alloy during sub-transus rolling vis-A -vis the control alloy Ti-6Al-4V. In the second part, the static annealing response of the two alloys at self-same conditions is compared and the principal micromechanisms are analyzed. Faster globularization kinetics has been observed in the Ti-6Al-4V-0.1B alloy for equivalent annealing conditions. This is primarily attributed to the alpha colonies, which leads to easy boundary splitting via multiple slip activation in this alloy. The other mechanisms facilitating lamellar to equiaxed morphological transformations, e.g., termination migration and cylinderization, also start early in the boron-modified alloy due to small alpha colony size, small aspect ratio of the alpha lamellae, and the presence of TiB particles in the microstructure. Both the alloys exhibit weakening of basal fiber (ND||aOE (c) 0001 >) and strengthening of prism fiber (RD||aOE (c) aOE(a)) upon annealing. A close proximity between the orientations of fully globularized primary alpha and secondary alpha phases during alpha -> beta -> alpha transformation has accounted for such a texture modification.

Tailoring the optical properties of amorphous heavily Er3+-doped Ge-Ga-S thin films

This study deals with the influence of Er-doping level and thermal annealing on the optical properties of amorphous Ge-Ga-S thin films. Nominal compositions of (GeS2)(75)(Ga2S3)(25) doped with high concentrations of 2.1 and 2.4 mol% Er2S3 (corresponding to 1.2 and 1.4 at% Er, respectively) have been chosen for this work. The results have been related to those obtained for the un-doped samples. The values of the refractive index, the absorption coefficient and optical band gap have been determined from the transmittance data. It has been found that the optical band gap of un-doped and 2.1 mol% Er2S3-doped films slightly increases with annealing temperature, whereas at 2.4 mol% Er2S3-doping level it is decreased. The dependences of the optical parameters on the erbium concentration and effect of annealing in the temperature range of 100-200 degrees C have been evaluated and discussed in relation to possible structural changes.

Effect of hydrogen charging on tensile properties of B-modified Ti-6Al-4V alloy

Trace addition of B to Ti and its alloys leads to a marked microstructural refinement, which in turn enhances the tensile and fatigue properties of the as-cast alloys. This can be particularly advantageous in applications wherein Ti alloys are used in the as-cast form. In some of these, the environment containing H and Ti alloy components is susceptible to embrittlement due to H uptake. Whether the addition of B to Ti-6Al-4V improves the relative mechanical performance of such cast components used in H environments is examined in this work. Cast Ti-6Al-4V-xB (0 <= x <= 0.55 wt%) alloys were H charged at 500 and 700 degrees C for up to 4 h. Microstructures and room temperature tensile properties of the resulting alloys have been evaluated. Experimental results show that charging at 700 degrees C for 2 h leads to the formation of titanium hydride in the microstructure, which in turn causes severe embrittlement. For shorter durations of charging, a marginal increase in strength was noted, which is attributed to the solid solution strengthening by H. The mechanical performance of the B modified alloys was found to be relatively higher, implying that B addition not only refines the as-cast microstructure but also is beneficial in applications that involve H environment A direct correlation between the volume fraction of TiB particles in the microstructure and the relative reduction in the strength of H-embrittled alloys suggests that the addition of B to Ti alloys, in optimum quantities, can be utilized as a strategy to design alloys that are more resistant to H embrittlement.

Metal doped nanosized titania used for the photocatalytic degradation of rhodamine B dye under visible-light

Metal-doped anatase nanosized titania photocatalysts were successfully synthesized using a sal gel process. Different amounts of the dopants (0.2, 0.4, 0.6, 0.8 and 1.0%) of the metals (Ag, Ni, Co and Pd) were utilized. The UV-Vis spectra (solid state diffuse reflectance spectra) of the doped nanoparticles exhibited a red shift in the absorption edge as a result of metal doping. The metal-doped nanoparticles were investigated for their photocatalytic activity under visible-light irradiation using Rhodamine B (Rh B) as a control pollutant. The results obtained indicate that the metal-doped titania had the highest activity at 0.4% metal loading. The kinetic models revealed that the photodegradation of Rh B followed a pseudo first order reaction. From ion chromatography (IC) analysis the degradation by-products Rhodamine B fragments were found to be acetate, chloride, nitrite, carbonate and nitrate ions.

Ultranarrow and Widely Tunable Mn2+-Induced Photoluminescence from Single Mn-Doped Nanocrystals of ZnS-CdS Alloys

Extensively studied Mn-doped semiconductor nanocrystals have invariably exhibited photoluminescence over a narrow energy window of width <= 150 meV in the orange-red region and a surprisingly large spectral width (>= 180 meV), contrary to its presumed atomic-like origin. Carrying out emission measurements on individual single nanocrystals and supported by ab initio calculations, we show that Mn PL emission, in fact, can (i) vary over a much wider range (similar to 370 meV) covering the deep green-deep red region and (ii) exhibit widths substantially lower (similar to 60-75 meV) than reported so far, opening newer application possibilities and requiring a fundamental shift in our perception of the emission from Mn-doped semiconductor nanocrystals.

Effect of hybridizing micron-sized Ti with nano-sized SiC on the microstructural evolution and mechanical response of Mg-5.6Ti composite

In this work, the effect of hybridizing micro-Ti with nano-SiC particulates on the microstructural and the mechanical behaviour of Mg-5.6Ti composite were investigated. Mg materials containing micron-sized Ti particulates hybridized with different amounts of nano-size SiC particulates were synthesized using the disintegrated melt deposition method followed by hot extrusion. The microstructural and mechanical behaviour of the developed Mg hybrid composites were studied in comparison with Mg-5.6Ti. Microstructural characterization revealed grain refinement attributed to the presence of uniformly distributed micro-Ti particles embedded with nano-SiC particulates. Electron back scattered diffraction (EBSD) analyses of Mg-(5.6Ti + 1.0SiC)(BM) hybrid composite showed relatively more localized recrystallized grains and lesser tensile twin fraction, when compared to Mg-5.6Ti. The evaluation of mechanical properties indicated that the best combination of strength and ductility was observed in the Mg-(5.6Ti + 1.0SiC)(BM) hybrid composites. The superior strength properties of the Mg-(5.6Ti + x-SiC)(BM) hybrid composites when compared to Mg-5.6Ti is attributed to the presence of nano-reinforcements, the uniform distribution of the hybridized particles and the better interfacial bonding between the matrix and the reinforcement particles, achieved by nano-SiC addition.

Effect of Ti concentration on the growth of Nb3Sn between solid Nb(Ti) and liquid Sn

The change in the growth rate of the Nb3Sn product phase because of Ti addition is studied for solid Nb(Ti)-liquid Sn interactions. The growth rate increased from no Ti to 1 at.% and 2 at.% of Ti in Nb, and the activation energy decreased from 221 kJ/mol to 146 kJ/mol. Based on the estimated values, the role of grain boundary and lattice diffusion is discussed in light of the possibility of increased grain boundary area and point defects such as antisites and vacancies.

Role of electrolyte chemistry on electronic and in vitro electrochemical properties of micro-arc oxidized titania films on Cp Ti

The primary objective of the present work was to study the electronic and in vitro electrochemical properties of micro-arc oxidized titania films on Cp Ti, fabricated independently in various electrolyte solutions consisting of anions such as phosphate (PO43-), borate (B4O72-), citrate (C6H5O73-) and silicate (SiO32-). Further the role of anions on the structural, morphological and compositional properties of the fabricated films was studied. All the titania films were developed by micro-arc oxidation (MAO) technique for a fixed treatment time of 8 min under constant current mode. The surface morphology, elemental distribution, composition and structural characteristics of the films were assessed by scanning electron microscope (SEM) equipped with energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) techniques. The thermodynamic and kinetic corrosion properties of the films were studied under simulated body fluid (SBF) conditions (pH 7.4 and 37 degrees C) by conducting chronopotentiometric and potentiodynamic polarization tests. Electrochemical impedance spectroscopy (EIS) coupled with equivalent circuit modelling was carried out to analyse the frequency response and Mott-Schottky analysis was performed to study the semiconducting (electronic) properties of the films. Salt spray fog accelerated corrosion test was conducted for 168h as per ASTM B117 standard to corroborate the corrosion and semiconducting properties of the samples based on the visual examination. The XRD results showed that the transformation from the metastable anatase phase to the thermodynamically stable rutile phase and the crystalline growth of the respective phases were strongly influenced by the addition of anions. The SEM-EDS results demonstrated that the phosphorous (P) content in the films varied from 2.4 at% to 5.0 at% indicating that the amount of P in the films could be modified by adding an appropriate electrolyte additive. The electrochemical corrosion test results showed that the film fabricated in citrate (C6H5O73-) containing electrolyte is thermodynamically and kinetically more stable compared to that of all the others. The results of the Mott-Schottky analysis indicated that all the fabricated films showed an n-type semiconducting behaviour and the film developed in citrate (C6H5O73-) containing electrolyte exhibited the lowest donor concentration and the most negative flat band potential that contributed to its highest corrosion resistance in SBF solution. The results of the salt spray accelerated corrosion tests were in agreement with those obtained from the electrochemical and Mott-Schottky analysis.

Li diffusion through doped and defected graphene

We investigate the effect of nitrogen and boron doping on Li diffusion through defected graphene using first principles based density functional theory. While a high energy barrier rules out the possibility of Li-diffusion through the pristine graphene, the barrier reduces with the incorporation of defects. Among the most common defects in pristine graphene, Li diffusion through the divacancy encounters the lowest energy barrier of 1.34 eV. The effect of nitrogen and boron doping on the Li diffusion through doped defected-graphene sheets has been studied. N-doping in graphene with a monovacancy reduces the energy barrier significantly. The barrier reduces with the increasing number of N atoms. On the other hand, for N doped graphene with a divacancy, Li binds in the plane of the sheet, with an enhanced binding energy. The B doping in graphene with a monovacancy leads to the enhancement of the barrier. However, in the case of B-doped graphene with a divacancy, the barrier reduces to 1.54 eV, which could lead to good kinetics. The barriers do not change significantly with B concentration. Therefore, divacancy, B and N doped defected graphene has emerged as a better alternative to pristine graphene as an anode material for Li ion battery.

Novel co-evaporation approach for the growth of Sb doped SnO2 nanowires

Antimony doped tin oxide (Sb:SnO2) nanowires were grown by thermal and e-beam assisted co-evaporation of Sb and Sn in the presence of oxygen at a low substrate temperature of 450 degrees C. The field emission scanning electron microscopy study revealed that the nanowires had a length and diameter of 2-4 mu m and 20-60 nm respectively. Transmission electron microscopy study revealed the single crystalline nature of the nanowires; energy dispersive X-ray spectroscopy (EDS) and EDS mapping on the nanowires confirmed the presence of Sb doping in the nanowires. UV light detection study on the doped SnO2 nanowire films exhibited fast response and recovery time compared to undoped SnO2 nanowire films. This is an innovative and simple method to grow doped SnO2 nanowires.

Strain-controlled fatigue in B-modified Ti-6Al-4V alloys

The strain-controlled fatigue behaviour of Ti-6Al-4V alloy with up to 0.11 wt.% B addition was investigated. Results show significant softening when the strain amplitudes, Delta epsilon(T)/2, are >= 0.75%. B addition was found to improve the fatigue life for Delta epsilon(T)/2 <= 0.75% as it corresponds to the elastic regime and hence is strength dominated. At Delta epsilon(T)/2 = 1%, in contrast, the base alloy exhibits higher fatigue life as TiB particle cracking due to strain incompatibility causes easy crack nucleation in the B-modified alloys. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.