The analysis of stochastic EMC problems using the concept of diffuse field reciprocity

There has been much progress in recent years in the analysis of complex random vibro-acoustic systems, and general analysis methods have been developed which are based on the properties of diffuse wave fields. It is shown in the present paper that such methods can also be applied to high frequency EMC problems, avoiding the need for costly full wave solutions to Maxwell's equations in complex cavities. The theory behind the approach is outlined and then applied to the relatively simple case of a wiring system which is subject to reverberant electromagnetic wave excitation. © 2011 IEEE.

Cold-gas chemical vapor deposition to identify the key precursor for rapidly growing vertically-aligned single-wall and few-wall carbon nanotubes from pyrolyzed ethanol

Vertically-aligned carbon nanotubes (VA-CNTs) were rapidly grown from ethanol and their chemistry has been studied using a "cold-gas" chemical vapor deposition (CVD) method. Ethanol vapor was preheated in a furnace, cooled down and then flowed over cobalt catalysts upon ribbon-shaped substrates at 800 °C, while keeping the gas unheated. CNTs were obtained from ethanol on a sub-micrometer scale without preheating, but on a millimeter scale with preheating at 1000 °C. Acetylene was predicted to be the direct precursor by gas chromatography and gas-phase kinetic simulation, and actually led to millimeter-tall VA-CNTs without preheating when fed with hydrogen and water. There was, however a difference in CNT structure, i.e. mainly few-wall tubes from pyrolyzed ethanol and mainly single-wall tubes for unheated acetylene, and the by-products from ethanol pyrolysis possibly caused this difference. The "cold-gas" CVD, in which the gas-phase and catalytic reactions are separately controlled, allowed us to further understand CNT growth. © 2012 Elsevier Ltd. All rights reserved.

Exhaust gas ignition (EGI)-a new concept for rapid light-off of automotive exhaust catalyst

Increasing pressure on lowering vehicle exhaust emissions to meet stringent California and Federal 1993/1994 TLEV emission standards of 0.125 gpm NMOG, 3.4 gpm CO and 0.4 gpm NOx and future ULEV emission standards of 0.04 gpm NMOG, 1.7 gpm CO and 0.2 gpm NOx has focused specific attention on the cold start characteristics of the vehicle's emission system, especially the catalytic converter. From test data it is evident that the major portion of the total HC and CO emissions occur within the first two minutes of the driving cycle while the catalyst is heating up to operating temperature. The use of an electrically heated catalyst (EHC) has been proposed to alleviate this problem but the cost and weight penalties are high and the durability has yet to be fully demonstrated (1)*. This paper describes a method of reducing the light-off time of the catalytic converter to less than 20 seconds by means of an afterburner. The system uses exhaust gases from the engine calibrated to run rich and additional air injected into the exhaust gas stream to form a combustible mixture. The key feature concerns the method of making this combustible mixture ignitable within 2 seconds from starting the engine when the exhaust gases arriving at the afterburner are cold and essentially non-reacting. © Copyright 1992 Society of Automotive Engineers, Inc.

Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates

Vertically oriented GaAs nanowires (NWs) are grown on Si(111) substrates using metal-organic chemical vapor deposition. Controlled epitaxial growth along the 111 direction is demonstrated following the deposition of thin GaAs buffer layers and the elimination of structural defects, such as twin defects and stacking faults, is found for high growth rates. By systematically manipulating the AsH 3 (group-V) and TMGa (group-III) precursor flow rates, it is found that the TMGa flow rate has the most significant effect on the nanowire quality. After capping the minimal tapering and twin-free GaAs NWs with an AlGaAs shell, long exciton lifetimes (over 700ps) are obtained for high TMGa flow rate samples. It is observed that the Ga adatom concentration significantly affects the growth of GaAs NWs, with a high concentration and rapid growth leading to desirable characteristics for optoelectronic nanowire device applications including improved morphology, crystal structure and optical performance. © 2012 IOP Publishing Ltd.

High epitaxial growth rate of 4H-SiC using TCS as silicon precursor

High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reactor on n-type 4H-SiC 8 degrees off-oriented substrates in the size of 10 mm x 10 mm, using trichlorosilane (TCS) as silicon precursor source together with ethylene as carbon precursor source. Cross-section Scanning Electron Microscopy (SEM), Raman scattering spectroscopy and Atomic Force Microscopy (AFM) were used to determine the growth rate, structural property and surface morphology, respectively. The growth rate reached to 23 mu m/h and the optimal epilayer was obtained at 1600 degrees C with TCS flow rate of 12 seem in C/Si of 0.42, which has a good surface morphology with a low Rms of 0.64 nm in 10 mu mx10 mu m area.

coconceptmap: a system for collaborative concept mapping

Concept mapping is a technique for visualizing the relationships between different concepts, and collaborative concept mapping is used to model knowledge and transfer expert knowledge. Because of lacking some features,existing systems can’t support collaborative concept mapping effectively. In this paper, we analysis the collaborative concept mapping process according to the theory of distributed cognition, and argue the functions effective systems ought to include. A collaborative concept mapping system should have the following features: visualization of concept map, flexible collaboration style,supporting natural interaction, knowledge management and history management. Furthermore, we describe every feature in details. Finally,a prototype system has been built to fully explore the above technologies.

structuring and manipulating hand-drawn concept maps

Concept maps are an important tool to knowledge organization,representation, and sharing. Most current concept map tools do not provide full support for hand-drawn concept map creation and manipulation, largely due to the lack of methods to recognize hand-drawn concept maps. This paper proposes a structure recognition method. Our algorithm can extract node blocks and link blocks of a hand-drawn concept map by combining dynamic programming and graph partitioning and then build a concept-map structure by relating extracted nodes and links. We also introduce structure-based intelligent manipulation technique of hand-drawn concept maps. Evaluation shows that our method has high structure recognition accuracy in real time, and the intelligent manipulation technique is efficient and effective.

Epitaxial growth on 4H-SiC by TCS as a silicon precursor

Epitaxial growth on n-type 4H-SiC 8°off-oriented substrates with a size of 10 × 10 mm~2 at different tem-peratures with various gas flow rates has been performed in a horizontal hot wall CVD reactor, using trichlorosilane (TCS) as a silicon precursor source together with ethylene as a carbon precursor source. The growth rate reached 23 μm/h and the optimal epilayer was obtained at 1600 ℃ with a TCS flow rate of 12 sccm in C/Si of 0.42, which has a good surface morphology with a low RMS of 0.64 nm in an area of 10 × 10μm~2. The homoepitaxial layer was oh-tained at 1500 ℃ with low growth rate (< 5μm/h) and the 3C-SiC epilayers were obtained at 1650 ℃ with a growth rate of 60-70μm/h. It is estimated that the structural properties of the epilayers have a relationship with the growth temperature and growth rate. Silicon droplets with different sizes are observed on the surface of the homoepitaxial layer in a low C/Si ratio of 0.32.