Mesoscopic Fano effect modulated by Rashba spin-orbit coupling and external magnetic field

By employing non-equilibrium Green's function method, the mesoscopic Fano effect modulated by Rashba spin-orbit (SO) coupling and external magnetic field has been elucidated for electron transport through a hybrid system composed of a quantum dot (QD) and an Aharonov-Bohm (AB) ring. The results show that the orientation of the Fano line shape is modulated by the Rashba spin-orbit interaction k(R)L variation, which reveals that the Fano parameter q will be extended to a complex number, although the system maintains time-reversal symmetry (TRS) under the Rashba SO interaction. Furthermore, it is shown that the modulation of the external magnetic field, which is applied not only inside the frame, but also on the QD, leads to the Fano resonance split due to Zeeman effect, which indicates that the hybrid is an ideal candidate for the spin readout device. (C) 2007 Elsevier B.V All rights reserved.

Stabilized and tunable single-frequency erbium-doped fiber ring laser employing external injection locking

A stabilized and tunable single-longitudinal-mode erbium-doped fiber ring laser has been proposed and experimentally demonstrated. The laser is structured by combining the compound cavity with a fiber Fabry-Perot tunable filter. An injection-locking technique has been used to stabilize the wavelength and output power of the laser. One of the longitudinal modes is stimulated by the injected continuous wave so that this mode is able to win the competition to stabilize the system. A minimum output power of 0.6 dBm and a signal-to-noise ratio of over 43 dB within the tuning range of 1527-1562 nm can be achieved with the proposed technique. A wavelength variation of less than 0.01 nm, a power fluctuation of less than 0.02 dB, and a short-term linewidth of about 1.4 kHz have also been obtained.

Semiconductor-metal transition in InSb nanowires and nanofilms under external electric field

The electronic structures, Rashba spin-orbit couplings, and transport properties of InSb nanowires and nanofilms are investigated theoretically. When both the radius of the wire (or the thickness of the film) and the electric field are large, the electron bands and hole bands overlap, and the Fermi level crosses with some bands, which means that the semiconductors transit into metals. Meanwhile, the Rashba coefficients behave in an abnormal way. The conductivities increase dramatically when the electric field is larger than a critical value. This semiconductor-metal transition is observable at the room temperature. (c) 2006 American Institute of Physics.

Electronic structure of InSb quantum ellipsoids in an external magnetic field

The shape dependence of electronic structure, electron g factors in the presence of the external magnetic field of InSb quantum ellipsoids are investigated in the framework of eight-band effective-mass approximation. It is found that as the increasing aspect ratio e, the electron states with P character split into three doublets for the different physical interaction and the light-hole states with S character come up to the top of valence bands at e = 2.6 in comparison with the heavy-hole states. In the presence of the external magnetic field, the energy splits of electron states are different for their wave function distribution direction, and the hole ground state remain optical active for a suitable aspect ratio. The electron g factors of InSb spheres decrease with increasing radius, and have the value of about two for the smallest radius, about -47.2 for sufficiently larger radius, similar to the bulk material case. Actually, the electron g factors decrease as any one of the three dimensions increase. The more dimensions increase, the more g factors decrease. The dimensions perpendicular to the direction of the magnetic field affect the g factors more than the other dimensions. (c) 2006 Elsevier B.V. All rights reserved.

The effects of nonlinear couplings and external magnetic field on the thermal entanglement in a two-spin-qutrit system

We investigate the effects of nonlinear couplings and external magnetic field on the thermal entanglement in a two-spin-qutrit system by applying the concept of negativity. It is found that the nonlinear couplings favor the thermal entanglement creating. Only when the nonlinear couplings vertical bar K vertical bar are larger than a certain critical value does the entanglement exist. The dependence of the thermal entanglement in this system on the magnetic field and temperature is also presented. The critical magnetic field increases with the increasing nonlinear couplings constant vertical bar K vertical bar. And for a fixed nonlinear couplings constant, the critical temperature is independent of the magnetic field B. (c) 2005 Elsevier B.V. All rights reserved.

Thermal entanglement in a two-spin-qutrit system under a nonuniform external magnetic field

The thermal entanglement in a two-spin-qutrit system with two spins coupled by exchange interaction under a magnetic field in an arbitrary direction is investigated. Negativity, the measurement of entanglement is calculated. We find that for any temperature the evolvement of negativity is symmetric with respect to magnetic field. The behavior of negativity is presented for four different cases. The results show that for different temperature; different magnetic field give maximum entanglement. Both the parallel and antiparallel magnetic field cases are investigated qualitatively (not quantitatively) in detail, we find that the entanglement may be enhanced under an antiparallel magnetic field.

Experimental study on tunable external cavity photodetectors

In this paper, an experiment on tunable resonant cavity enhanced (RCE) photodetector with external cavity is reported. It is the first time to realize a tunable RCE photodetector in China. A tuning range about 10 nm has been obtained and further extension is expected. Corresponding theoretical analysis and discussions are presented. (C) 2000 Elsevier Science B.V. All rights reserved.

Impact of diode facet reflectivity on the fiber grating external cavity semiconductor laser

The scattering matrix method is used to analyze the multiple reflection effect between the laser diode facet and the fiber grating facet by considering the fiber grating external cavity laser diode (FGECL) as a four-mirror cavity laser. When neglecting other important parameters such as butt-coupling distance between the diode and the fiber facets, coupling efficiency, external cavity length, it is shown that low reflectivity is not a crucial factor for the laser characteristics such as SMSR. Experimentally high SMSR fiber grating external cavity laser is fabricated with a relatively large residual facet reflectivity (about 1%), which is coincident with our simulation results.

A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission

A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm(2) only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current density can be reduced remarkably compared with the free-running QD gain device.

Broadband external cavity tunable quantum dot lasers with low injection current density

Broadband grating-coupled external cavity laser, based on InAs/GaAs quantum dots, is achieved. The device has a wavelength tuning range from 1141.6 nm to 1251.7 nm under a low continuous-wave injection current density (458 A/cm(2)). The tunable bandwidth covers consecutively the light emissions from both the ground state and the 1st excited state of quantum dots. The effects of cavity length and antireflection facet coating on device performance are studied. It is shown that antireflection facet coating expands the tuning bandwidth up to similar to 150 nm, accompanied by an evident increase in threshold current density, which is attributed to the reduced interaction between the light field and the quantum dots in the active region of the device.

SOA-based actively mode-locked fiber ring laser by forward injecting an external pulse train

An actively mode-locked fiber ring laser based on cross-gain modulation (XGM) in a semiconductor optical amplifier (SOA) is demonstrated to operate stably with a simple configuration. By forward injecting an easily-generated external pulse train, the mode-locked fiber laser can generate an optical-pulse sequence with pulsewidth about 6 ps and average output power about 7.9 mW. The output pulses show an ultra-low RMS jitter about 70.7 fs measured by a RF spectrum analyzer. The use of the proposed forward-injection configuration can realize the repetition-rate tunability from I to 15 GHz for the generated optical-pulse sequences. By employing a wavelength-tunable optical band-pass filter in the laser cavity, the operation wavelength of the designed SOA-based actively mode-locked fiber laser can be tuned continuously in a wide span between 1528 and 1565 nm. The parameters of external-injection optical pulses are studied experimentally to optimize the mode-locked fiber laser. (C) 2009 Elsevier B.V. All rights reserved.

EFFECTS OF AN EXTERNAL MAGNETIC-FIELD ON SHALLOW DONOR LEVELS IN SEMICONDUCTORS

An extension of Faulkner's method for the energy levels of the shallow donor in silicon and germanium at zero field is made in order to investigate the effects of a magnetic field upon the excited states. The effective-mass Hamiltonian matrix elements of an electron bound to a donor center and subjected to a magnetic field B, which involves both the linear and quadratic terms of magnetic field, are expressed analytically and matrices are solved numerically. The photothermal ionization spectroscopy of phosphorus in ultrapure silicon for magnetic fields parallel to the [1,0,0] and [1,1,1] directions and up to 10 T is explained successfully.