995 resultados para ddc: 510
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主要研究了110keV的He~+高温注入Al_2O_3单晶及1.1MeV/u的~(208)Pb~(27+)辐照注氦Al_2O_3样品的光致发光的特性。从测试结果可以清楚地看到在375nm,413nm和450nm处出现了强烈的发光峰。并且在600K,5×10~(16) ions/cm~2剂量点,样品的发光峰是最强的。这表明He~+注入Al_2O_3后使带隙中深的辐射中心复合的效率大幅度提高,极大的增强了其发光强度,而且发光伴随着蓝移现象。而经过高能~(208)Pb~(27+)辐照后的样品,在390nm出现了新的发光峰,从FTIR谱中我们能够看到,可能是~(208)Pb~(27+)辐照相对沉积膜出现一定的晶化,其中含有许多纳米尺寸的Al_2O_3晶粒所致。
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频率自动调谐系统是聚束器的重要组成部分之一。频率调谐系统成功的研制和投入使用达到了使谐振腔体的固有谐振频率在22~54 MHz的范围内自动稳定在输入信号频率上的目的,频率自动微调系统达到了±5×10-6的频率稳定度,解决了由于腔体失谐所造成的高频电压滑落的问题,由此在腔体的加速缝隙间得到稳定的高频电压,保证了聚束器系统的高质量可靠运行。
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利用Skyrme Hartree Fock势和Woods Saxon势 ,选取稳定核4 8Ca和丰中子核60 Ca ,对中子平均场势能进行了研究 ,并给出了其特性 .发现丰中子核60 Ca的SHF势与Woods Saxon势在核表面区域相当符合 ,但在核表面以外有相当大的差距 .SHF势在表面以外部分比表面区域呈现出更大的弥散度 ,而原有的Woods Saxon势不能描述这一特征 .为此 ,对Woods Saxon势形式进行了修正 ,经过验证 ,修正的Woods Saxon势能正确地描述丰中子核的中子晕特性 .
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研究了 HIRFL上重离子辐照装置控制系统准确性 ,结果表明实验系统剂量的准确与剂量率有关。在一定的剂量下要选择合适的剂量率可保持控制系统的准确。同时在考虑精确剂量时 ,应修正实验数据
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描述了用于兰州在线同位素分离的FEBIAD靶 -离子源的改进、最新进展和结果。经过改进后 ,在线同位素分离器对Xe的分辨本领由原来的 360提高到 60 0 ,对199Hg的在线测量效率提高了一个数量级 ,并测出了Hg、At、Rn等元素的一系列放射性同位素产物及生成截面为 5×10 - 34 m2 的2 0 8Hg衰变的能量最高的一条γ线。
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A phenol-degrading. microorganism, Alcaligenes faecalis, was used to study the substrate interactions during cell growth on phenol and m-cresol dual substrates. Both phenol and m-cresol could be utilized by the bacteria as,the sole carbon and energy sources. When cells grew on the mixture of phenol and m-cresol, strong substrate interactions were observed. m-Cresol inhibited the degradation of phenol, on the other hand, phenol also inhibited the utilization of m-cresol, the overall cell growth rate was the co-action of phenol and m-cresol. In addition, the cell growth and substrate degradation kinetics of phenol, m-cresol as single and mixed substrates for A. faecalis in batch cultures were also investigated over a wide range of initial phenol concentrations (10-1400 mg L-1) and initial m-cresol concentrations (5-200 mg L-1). The single-substrate kinetics was described well using the Haldane-type kinetic models, with model constants of it mu(m1) = 0.15 h(-1), K-S1 = 2.22 mg L-1 and K-i1 = 245.37 mg L-1 for cell growth on phenol and mu(m2) = 0.0782 h(-1), K-S2 = 1.30 mg L-1 and K-i2 = 71.77 mgL(-1), K-i2' = 5480 (mg L-1)(2) for cell growth on m-cresol. Proposed cell growth kinetic model was used to characterize the substrates interactions in the dual substrates system, the obtained parameters representing interactions between phenol and m-cresol were, K = 1.8 x 10(-6), M = 5.5 x 10(-5), Q = 6.7 x 10(-4). The results received in the experiments demonstrated that these models adequately described the dynamic behaviors of phenol and m-cresol as single and mixed substrates by the strain of A. faecalis.
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Single crystal sapphire (Al2O3) samples implanted with 110 keV He and irradiated at 320 K by Pb-208(27), ions with energy of 1.1 MeV/u to the fluences ranging from 1 X 10(12) to 5 X 10(14) ion/cm(2) and subsequently annealed at 600, 900 and 1100 K. The obtained PL spectra showed that emission peaks centred at 375, 390, 413, and 450 nm appeared in irradiated samples. The peak of 390 ran became very intense after 600 K annealing. The peak of 390 nm weakened and 510 nm peak started to build up at 900 K annealing, the peak of 390 nm vanished and 510 nm peak increased with the annealing temperature rising to 1100 K. Infrared spectra showed a broadening of the absorption band between 460 cm(-1), and 510 cm(-1) indicating strongly damaged regions being formed in the Al2O3 samples and position shift of the absorption band at 1000-1300 cm(-1) towards higher wavenumber after Pb irradiation.
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In the present work the photoluminescence (PL) character of sapphire implanted with 110-keV He, Ar or Ne ions and subsequently irradiated with 230-MeV Pb was studied. The implantation was performed at 320 and 600 K using fluences from 5.0 x 10(16) to 2.0 x 10(17) ions/cm(2). The Pb ion irradiation was carried out at 320 K. The obtained PL spectra showed peaks at 375, 413 and 450 nm with maximum intensity at an implantation fluence of 5.0 x 10(16) ions/cm(2) and a new peak at 390 nm appeared in the He-implanted and subsequently Pb-irradiated samples. Infrared spectra showed a broadening of the absorption band between 460 and 510 nm indicating strongly damaged regions formed in the Al2O3 samples. A possible PL mechanism is discussed.
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研制了兰州重离子加速器冷却储存环(HIRFL-CSR)二极磁铁电源,提出了一种基于晶闸管相控整流技术和IGBT脉宽调制(PWM)变换技术的同步加速器二极磁铁电源的设计方案,分析、仿真了其工作原理,并设计、生产了1套完整的电源样机。经现场试验、长期运行及测试,电流稳定度<±5×10-5/8h,跟踪精度<±2×10-4,电流纹波<1×10-5。该方案满足HIRFL-CSR二极磁铁对电源技术指标的要求。
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采用束团在纵向相空间快速旋转的非绝热压缩方法研究了在兰州重离子加速器冷却储存环(HIRFL-CSR)上获取高能ns量级短脉冲重离子束的可行性,利用K-V包络方程对能量为250MeV/u、初始纵向束团长度为200ns、初始动量分散为5×10-4的238U72+离子束团的非绝热压缩过程进行了束流动力学模拟,给出了在束团压缩过程中束流相关参数的变化。结果表明,在CSR上可取得最短为16ns长度的238U72+离子束团,可满足用于高能量密度物理研究的50ns束团长度的要求。
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作为核物理的前沿领域之一,高自旋态的研究能够提供核结构、核形变、核子耦合等非常有价值的信息。本论文内容为研究188Au 高自旋态的结构特性。 利用能量为86 和90MeV的19F束流,通过重离子熔合蒸发反应173Yb(19F,4nγ)研究了双奇核188Au 的高自旋态能级结构。利用GEMINI 探测器阵列进行了γ射线的激发函数、X-γ和γ-γ-t 符合测量,共获取了约160×106 个符合事件。基于实验测量结果,对原有的双奇核188Au 能级纲图做了较大的修改。新发现了两个转动带,分别对应建立在π1/2[541]⊗ν1/2[510] 和π1/2[541]⊗νi13/2 组态上的双退耦带和半退耦带。对前人所建立的正宇称带能级进行了修改,发现了一条新的20+态能级,并且指定其为πh11/2⊗2νi13/2h9/2的四准粒子结构。考查与费米面临近的单粒子轨道γ形变驱动效应,188Au 晕态带的γ∼70°非轴对称的形变可能是由h11/2− 奇质子驱动的。π1/2[541]⊗νi13/2 带观察到在低自旋发生旋称反转现象,对这个组态带的A∼180 区旋称反转系统性分析表明,反转点的转动惯量c Θ 函数不随NpNn而变,这与其它几个区有明显的不同。 另外,本论文还介绍了利用16 路Segment 型Clover 探测器的γ射线线性极化测量方法。并且利用60Co 源的两条级联γ射线对其灵敏度进行测试,发现能有效地测量γ射线的电磁属性,从而确定能级的宇称
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随着世代的增加,水稻上三叶中叶绿素含量有降低趋势,倒三叶变化较明显。‘辽粳326’剑叶中ATPASE活性、ABA含量和净光合速率则随世代的增加而逐渐降低,但差异未达显著水平,群体光合速率降低较明显,N代与N+4代差异达显著水平。‘奥羽316’的剑叶中ATPASE活性、ABA含量和光合速率随世代增加变化不明显。