Triangular flow in event-by-event ideal hydrodynamics in Au+Au collisions at √SNN = 200A GeV

The first calculation of triangular flow ν3 in Au+Au collisions at √sNN = 200A GeV from an event-by-event (3 + 1) d transport+hydrodynamics hybrid approach is presented. As a response to the initial triangularity Ie{cyrillic, ukrainian}3 of the collision zone, ν3 is computed in a similar way to the standard event-plane analysis for elliptic flow ν2. It is found that the triangular flow exhibits weak centrality dependence and is roughly equal to elliptic flow in most central collisions. We also explore the transverse momentum and rapidity dependence of ν2 and ν3 for charged particles as well as identified particles. We conclude that an event-by-event treatment of the ideal hydrodynamic evolution startingwith realistic initial conditions generates the main features expected for triangular flow. © 2010 The American Physical Society.

Réponses immunitaires de l'homme à l'égard de la HBHA :détection de l'infection latente et aide au diagnostic de l'infection active par "Mycobacterium tuberculosis"

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Faut-il encore craindre la tuberculose au XXIème siècle ?

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"L'Invitation au voyage" de Baudelaire :une analyse évocative

This paper presents a detailed analysis of Baudelaire's poem ''L'Invitation au voyage''. It aims to understand the general meaning of this poem, showing that Baudelaire's ''voyage'' comes less to an ideal paradise than to a kind of voluptuous purgatory. We associate together dimensions of the poem that are usually treated separately :biographical background, stylistic and intertextual borrowings (orientalized Holland, Goethe's Mignon, popular song and romance, Weber's music, Biblical episodes), formal structure and cognitive effects. Our method is based on Benoît de Cornulier's theory of metrics, Searle and Vanderveken's speech act theory and Marc Dominicy's theory of poetic evocation. As Dominicy's theory is quite recent, our article provides substantial summary and clarification of its main theoretical and methodological hypothesis.

Les discriminations au travail dues à l’orientation sexuelle et les identités de genre

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Maurice Sartre. Inscriptions grecques et latines de la Syrie. Tome XXI. Inscriptions de la Jordanie. Tome IV. Pétra et la Nabatène méridionale du wadi al-Hasa au golfe de 'Aqaba

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Multiple reflow study of ball grid array (BGA) solder joints on Au/Ni metallization

This paper evaluates the shearing behavior of ball grid array (BGA) solder joints on Au/Ni/Cu pads of FR4 substrates after multiple reflow soldering. A new Pb-free solder, Sn–3Ag–0.5Cu–8In (SACI), has been compared with Sn–3Ag–0.5Cu (SAC) and Sn–37Pb (SP) solders, in terms of fracture surfaces, shearing forces and microstructures. Three failure modes, ball cut, a combination of solder shear and solder/pad bond separation, and pad lift, are assessed for the different solders and reflow cycles. It is found that the shearing forces of the SP and SAC solder joints tend to increase slightly with an increase in the number of reflow cycles due to diffusion-induced solid solution strengthening of the bulk solder and augmentation of the shearing area. However, the shearing forces of the SACI solder joints decrease slightly after four cycles of reflow, which is ascribed to the thermal degradation of both the solder/intermetallic compound (IMC) and IMC/Ni interfaces. The SACI solder joints yield the highest strengths, whereas the SP solder joints give the smallest values, irrespective of the number of reflow cycles. Thickening of the interfacial IMC layer and coarsening of the dispersing IMC particles within the bulk solders were also observed. Nevertheless, the variation of shearing forces and IMC thickness with different numbers of reflow cycles was not so significant since the Ni under layer acted as an effective diffusion barrier. In addition, the initially-formed IMC layer retarded the further extensive dissolution of the pad material and its interaction with the solder

L'influence atlantique dans les montagnes portugaises au sud duTage

Prenant la flore et la végétation comme des indicateurs du climat local, on fait une analyse abrégée de l'influence atlantique sur quatre montagnes portugaises, s¡tuées au sud du fleuve Tage, en plain domaine méditerranéen. Elles sont distríbuées depuis le nord-est de l‘Alentejo jusqu’a l’extreme sud-ouest du territoire.L'observation des données floristiques a montré que la dominance des espéces méditerrennes est générale, bien que entre un mínimum de 34.0% à S. Mamede et un maximum de 48.9 % à Portel. On a vérifié aussi, en commun, un trés faible degré d'endémisme, lequel atteint la valeur la plus élevée -1.2%-, dans la montagne de Monchique. 

Effects of diphosphine structure on aurophilicity and luminescence in Au(I) complexes

The effects of diphosphine flexibility and bite angle on the structures and luminescence properties of Au(I) complexes have been investigated. A range of diphosphines based on heteroaromatic backbones [bis(2-diphenylphosphino)phenylether (dpephos), 9,9-dimethyl-4,5-bis(diphenylphosphino)xanthene (xantphos), and 4,6-bis(diphenylphosphino)dibenzofuran (dbfphos)] has been used to prepare mono- and digold derivatives. A clear relationship between the presence of aurophilic contacts and the emission properties of dinuclear complexes has been observed, with one of the complexes studied, [Au(2)Cl(2)(micro-xantphos)], exhibiting luminescence thermochromism.

Opacity in the upper atmosphere of AU Mic

In this paper we investigate the validity of the optically thin assumption in the transition region of the late-type star AU Mic. We use Far-Ultraviolet Spectroscopic Explorer (FUSE) observations of the C III multiplet and O VI resonance lines, hence yielding information at two different levels within the atmosphere. Significant deviations from the optically thin fluxes are found for C III in both quiescent and flare spectra, where only 60% of the flux is actually observed. This could explain the apparent deviation of C III observed in emission measure distributions. We utilize escape probabilities for both homogeneous and inhomogeneous geometries and calculate optical depths as high as 10 for the C III 1175.71 Angstrom component of the multiplet. Using a lower limit to the electron density (10(11) cm(-3))we derive an effective thickness of

Thickness-induced stabilization of ferroelectricity in SrRuO3/Ba0.5Sr0.5TiO3/Au thin film capacitors

Pulsed-laser deposition has been used to fabricate Au/Ba0.5Sr0.5TiO3/SrRuO3/MgO thin film capacitor structures. Crystallographic and microstructural investigations indicated that the Ba0.5Sr0.5TiO3 (BST) had grown epitaxially onto the SrRuO3 lower electrode, inducing in-plane compressive and out- of-plane tensile strain in the BST. The magnitude of strain developed increased systematically as film thickness decreased. At room temperature this composition of BST is paraelectric in bulk. However, polarization measurements suggested that strain had stabilized the ferroelectric state, and that the decrease in film thickness caused an increase in remanent polarization. An increase in the paraelectric-ferroelectric transition temperature upon a decrease in thickness was confirmed by dielectric measurements. Polarization loops were fitted to Landau-Ginzburg-Devonshire (LGD) polynomial expansion, from which a second order paraelectric-ferroelectric transition in the films was suggested at a thickness of similar to500 nm. Further, the LGD analysis showed that the observed changes in room temperature polarization were entirely consistent with strain coupling in the system. (C) 2002 American Institute of Physics.

Light emission from scanning tunnelling microscope on polycrystalline Au films - what is happening at the single-grain level?

When operated with a metallic tip and sample the scanning tunnelling microscope constitutes a nanoscale, plasmonic light source yielding broadband emission up to a photon energy determined by the applied bias. The emission is due to tunnelling electron excitation and subsequent radiative decay of localized plasmon modes, which can be on the lateral scale of a single metal grain (similar to 25 nm) or less. For a Au-tip/Au-polycrystalline sample under ambient conditions it is found that the intensity and spectral content of the emitted light are not dependent on the lateral grain dimension, but are predominantly determined by the tip geometry. However, the intensity increases strongly with increasing film thickness (grain depth) up to 20-25 nm or approximately the skin depth of the Au film. Photon maps can show less emissive grains and two classes of this occurrence are distinguished. The first is geometrical in origin - a double-tip structure in this case - while the second is due to a contamination-induced lowering of the local work function that causes the tunnel gap to increase. It is suggested that differences in work-function lowering between grains presenting different crystalline facets, combined with an exponential decay in emitted light intensity with tip - sample distance, leads to grain contrast. These results are relevant to tip-enhanced Raman scattering and the fabrication of micro/nano-scale planar, light-emitting tunnel devices.

Investigation of dead-layer thickness in SrRuO3/Ba0.5Sr0.5TiO3/Au thin-film capacitors

Thin-film capacitors, with barium strontium titanate (BST) dielectric layers between 7.5 and 950 nm in thickness, were fabricated by pulsed-laser deposition. Both crystallography and cation chemistry were consistent with successful growth of the BST perovskite. At room temperature, all capacitors displayed frequency dispersion such that epsilon (100 kHz)/epsilon (100 Hz) was greater than 0.75. The dielectric constant as a function of thickness was fitted, using the series capacitor model, for BST thicknesses greater than 70 nm. This yielded a large interfacial d(i)/epsilon (i) ratio of 0.40 +/-0.05 nm, implying a highly visible parasitic dead layer within the capacitor structure. Modeled consideration of the dielectric behavior for BST films, whose total thickness was below that of the dead layer, predicted anomalies in the plots of d/epsilon against d at the dead-layer thickness. In the capacitors studied here, no anomaly was observed. Hence, either (i) 7.5 nm is an upper limit for the total dead-layer thickness in the SRO/BST/Au system, or (ii) dielectric collapse is not associated with a distinct interfacial dead layer, and is instead due to a through-film effect. (C) 2001 American Institute of Physics.