930 resultados para Multilayer
Resumo:
根据某矿区的地质钻孔资料,划分了不同层面并对地层的交叉与缺失做了处理.利用不同层面的高程值建立不同层面的等高线,再由Kriging插值法得到矿区的三维地层模型.从所建模型中抽取剖面图并与矿区实际勘探线剖面图进行比较,验证了模型的可靠性.最后从建立的多层DEM模型中抽取剖面数据进行有限元数值模拟,并与实际勘探和采掘过程中揭露的断层位置比较,两者结果非常吻合,为该矿区采掘设计和构造预测提供了一定的参考.
Resumo:
The organometallic chemistry of the hexagonally close-packed Ru(001) surface has been studied using electron energy loss spectroscopy and thermal desorption mass spectrometry. The molecules that have been studied are acetylene, formamide and ammonia. The chemistry of acetylene and formamide has also been investigated in the presence of coadsorbed hydrogen and oxygen adatoms.
Acetylene is adsorbed molecularly on Ru(001) below approximately 230 K, with rehybridization of the molecule to nearly sp^3 occurring. The principal decomposition products at higher temperatures are ethylidyne (CCH_3) and acetylide (CCH) between 230 and 350 K, and methylidyne (CH) and surface carbon at higher temperatures. Some methylidyne is stable to approximately 700 K. The preadsorption of hydrogen does not alter the decomposition products of acetylene, but reduces the saturation coverage and also leads to the formation of a small amount of ethylene (via an η^2-CHCH_2 species) which desorbs molecularly near 175 K. Preadsorbed oxygen also reduces the saturation coverage of acetylene but has virtually no effect on the nature of the molecularly chemisorbed acetylene. It does, however, lead to the formation of an sp^2-hybridized vinylidene (CCH_2) species in the decomposition of acetylene, in addition to the decomposition products that are formed on the clean surface. There is no molecular desorption of chemisorbed acetylene from clean Ru(001), hydrogen-presaturated Ru(001), or oxygen-presaturated Ru(001).
The adsorption and decomposition of formamide has been studied on clean Ru(001), hydrogen-presaturated Ru(001), and Ru(001)-p(1x2)-O (oxygen adatom coverage = 0.5). On clean Ru(001), the adsorption of low coverages of formamide at 80 K results in CH bond cleavage and rehybridization of the carbonyl double bond to produce an η^2 (C,O)-NH_2CO species. This species is stable to approximately 250 K at which point it decomposes to yield a mixture of coadsorbed carbon monoxide, ammonia, an NH species and hydrogen adatoms. The decomposition of NH to hydrogen and nitrogen adatoms occurs between 350 and 400 K, and the thermal desorption products are NH_3 (-315 K), H_2 (-420 K), CO (-480 K) and N_2 (-770 K). At higher formamide coverages, some formamide is adsorbed molecularly at 80 K, leading both to molecular desorption and to the formation of a new surface intermediate between 300 and 375 K that is identified tentatively as η^1(N)-NCHO. On Ru(001)- p(1x2)-O and hydrogen-presaturated Ru(001), formamide adsorbs molecularly at 80 K in an η^1(O)- NH_2CHO configuration. On the oxygen-precovered surface, the molecularly adsorbed formamide undergoes competing desorption and decomposition, resulting in the formation of an η^2(N,O)-NHCHO species (analogous to a bidentate formate) at approximately 265 K. This species decomposes near 420 K with the evolution of CO and H_2 into the gas phase. On the hydrogen precovered surface, the Η^1(O)-NH_2CHO converts below 200 K to η^2(C,O)-NH_2CHO and η^2(C,O)-NH^2CO, with some molecular desorption occurring also at high coverage. The η^2(C,O)-bonded species decompose in a manner similar to the decomposition of η^2(C,O)-NH_2CO on the clean surface, although the formation of ammonia is not detected.
Ammonia adsorbs reversibly on Ru(001) at 80 K, with negligible dissociation occurring as the surface is annealed The EEL spectra of ammonia on Ru(001) are very similar to those of ammonia on other metal surfaces. Off-specular EEL spectra of chemisorbed ammonia allow the v(Ru-NH_3) and ρ(NH_3) vibrational loss features to be resolved near 340 and 625 cm^(-1), respectively. The intense δ_g (NH_3) loss feature shifts downward in frequency with increasing ammonia coverage, from approximately 1160 cm^(-1) in the low coverage limit to 1070 cm^(-1) at saturation. In coordination compounds of ammonia, the frequency of this mode shifts downward with decreasing charge on the metal atom, and its downshift on Ru(001) can be correlated with the large work function decrease that the surface has previously been shown to undergo when ammonia is adsorbed. The EELS data are consistent with ammonia adsorption in on-top sites. Second-layer and multilayer ammonia on Ru(001) have also been characterized vibrationally, and the results are similar to those obtained for other metal surfaces.
Resumo:
The interactions of N2, formic acid and acetone on the Ru(001) surface are studied using thermal desorption mass spectrometry (TDMS), electron energy loss spectroscopy (EELS), and computer modeling.
Low energy electron diffraction (LEED), EELS and TDMS were used to study chemisorption of N2 on Ru(001). Adsorption at 75 K produces two desorption states. Adsorption at 95 K fills only the higher energy desorption state and produces a (√3 x √3)R30° LEED pattern. EEL spectra indicate both desorption states are populated by N2 molecules bonded "on-top" of Ru atoms.
Monte Carlo simulation results are presented on Ru(001) using a kinetic lattice gas model with precursor mediated adsorption, desorption and migration. The model gives good agreement with experimental data. The island growth rate was computed using the same model and is well fit by R(t)m - R(t0)m = At, with m approximately 8. The island size was determined from the width of the superlattice diffraction feature.
The techniques, algorithms and computer programs used for simulations are documented. Coordinate schemes for indexing sites on a 2-D hexagonal lattice, programs for simulation of adsorption and desorption, techniques for analysis of ordering, and computer graphics routines are discussed.
The adsorption of formic acid on Ru(001) has been studied by EELS and TDMS. Large exposures produce a molecular multilayer species. A monodentate formate, bidentate formate, and a hydroxyl species are stable intermediates in formic acid decomposition. The monodentate formate species is converted to the bidentate species by heating. Formic acid decomposition products are CO2, CO, H2, H2O and oxygen adatoms. The ratio of desorbed CO with respect to CO2 increases both with slower heating rates and with lower coverages.
The existence of two different forms of adsorbed acetone, side-on, bonded through the oxygen and acyl carbon, and end-on, bonded through the oxygen, have been verified by EELS. On Pt(111), only the end-on species is observed. On dean Ru(001) and p(2 x 2)O precovered Ru(001), both forms coexist. The side-on species is dominant on clean Ru(001), while O stabilizes the end-on form. The end-on form desorbs molecularly. Bonding geometry stability is explained by surface Lewis acidity and by comparison to organometallic coordination complexes.
Resumo:
Por ser um material de baixo custo e apresentar propriedades ligantes, a macroalga marinha Sargassum filipendula vem sendo utilizada como material biossorvente no processo de biossorção de metais. No presente trabalho a alga marrom foi utilizada no estudo cinético e de equilíbrio dos íons de tório e urânio individuais e os resultados comparados à biossorção desses metais em sistema binário. Os testes foram realizados nas concentrações 1 e 10 mg/L e pH= 1,0 e 4,0 na temperatura de 25 1C. A melhor condição para biossorção de tório foi encontrada para 1 mg/L e pH= 1,0, enquanto que para urânio foi em 1 mg/L e pH= 4,0. O estudo cinético de biossorção de tório mostrou que o modelo de segunda ordem descreve melhor os dados experimentais em 1 mg/L (R2= 0,9987) e 10 mg/L (R2= 0,9919) em pH= 1,0 e 1 mg/L (R2= 0,9976) em pH= 4,0, enquanto em 10 mg/L (R2= 0,9787) pH= 4,0 a curva encontrada representou uma cinética de primeira ordem. Para a cinética de urânio os dois modelos se adequaram bem aos dados em ambas as condições experimentais. O estudo de equilíbrio mostrou um perfil crescente de captação de tório, com uma remoção de 96% e 54% do metal em pH= 1,0 e 4,0, respectivamente, a partir da Co= 1 mg/L. A melhor eficiência de captação dos íons de urânio foi de 33% para Co= 100 mg/L em pH= 1,0 e 71% para Co= 1 mg/L em pH= 4,0. Os dados experimentais da isoterma de tório mostraram-se mais adequados ao modelo de Freundlich para pH= 1,0, enquanto que para o pH= 4,0 esses foram melhor representados pelo modelo de Langmuir, com valores de coeficiente de determinação superiores. Em relação à isoterma do urânio, o modelo de Freundlich representou bem os dados experimentais. Os parâmetros de equilíbrio calculados a partir do modelo de Langmuir (kL, qmax ) e Freundlich (kF, n) indicaram uma maior afinidade da biomassa pelos íons de tório em ambas as condições experimentais. O estudo de equilíbrio do sistema binário mostrou que a biossorção dos íons de tório não é afetada pela presença do urânio em solução. Por outro lado, a sorção do urânio foi fortemente afetada pela coexistência com os íons de tório.
Resumo:
采用几何光学方法对共焦系统扫描时产生的扫描深度与厚度失真进行了理论分析,对名义扫描深度与实际扫描深度之间的关系进行了研究.以若丹明6G薄膜与玻片组成的多层样品为模型,对其进行了模拟计算,得到了扫描深度与厚度失真与系统数值孔径、折射率和样品厚度之间的关系.在实验上分别采用单光子荧光和双光子荧光作为检测信号,在反射式共焦扫描系统上进行了纵向扫描实验,并与模拟计算的结果进行了比较和分析.
Resumo:
Three subjects related to epitaxial GaAs-GaAlAs optoelectronic devices are discussed in this thesis. They are:
1. Embedded Epitaxy
This is a technique of selective multilayer growth of GaAs- Ga1-xAlxAs single crystal structures through stripe openings in masking layers on GaAs substrates. This technique results in prismatic layers of GaAs and Ga1-xAlxAs "embedded" in each other and leads to controllable uniform structures terminated by crystal faces. The dependence of the growth habit on the orientation of the stripe openings has been studied. Room temperature embedded double heterostructure lasers have been fabricated using this technique. Threshold current densities as low as 1.5 KA/cm2 have been achieved.
2. Barrier Controlled PNPN Laser Diode
It is found that the I-V characteristics of a PNPN device can be controlled by using potential barriers in the base regions. Based on this principle, GaAs-GaAlAs heterostructure PNPN laser diodes have been fabricated. GaAlAs potential barriers in the bases control not only the electrical but also the optical properties of the device. PNPN lasers with low threshold currents and high breakover voltage have been achieved. Numerical calculations of this barrier controlled structure are presented in the ranges where the total current is below the holding point and near the lasing threshold.
3. Injection Lasers on Semi-Insulating Substrates
GaAs-GaAlAs heterostructure lasers fabricated on semi-insulating substrates have been studied. Two different laser structures achieved are: (1) Crowding effect lasers, (2) Lateral injection lasers. Experimental results and the working principles underlying the operation of these lasers are presented. The gain induced guiding mechanism is used to explain the lasers' far field radiation patterns. It is found that Zn diffusion in Ga1-xAlxAs depends on the Al content x, and that GaAs can be used as the diffusion mask for Zn diffusion in Ga1-xAlxAs. Lasers having very low threshold currents and operating in a stable single mode have been achieved. Because these lasers are fabricated on semi-insulating substrates, it is possible to integrate them with other electronic devices on the same substrate. An integrated device, which consists of a crowding effect laser and a Gunn oscillator on a common semi-insulating GaAs substrate, has been achieved.
Resumo:
The usual beam splitter of multilayer-coated film with a wideband spectrum is not easy to achieve. We describe the realization of a wideband transmission two-port beam splitter based on a binary fused-silica phase grating. To achieve high efficiency and equality in the diffracted 0th and -1st orders, the grating profile parameters are optimized using rigorous coupled-wave analysis at a wavelength of 1550 nm. Holographic recording and the inductively coupled plasma dry etching technique are used to fabricate the fused-silica beam splitter grating. The measured efficiency of (45% x 2) = 90% diffracted into the both orders can be obtained with the fabricated grating under Littrow mounting. The physical mechanism of such a wideband two-port beam splitter grating can be well explained by the modal method based on two-beam interference of the modes excited by the incident wave. With the high damage threshold, low coefficient of thermal expansion, and wideband high efficiency, the presented beam splitter etched in fused silica should be a useful optical element for a variety of practical applications. (C) 2008 Optical Society of America.
Resumo:
In this paper, a refractive index pro. le design enabling us to obtain a. at modal field around the fibre centre is investigated. The theoretical approach for designing such multilayer large flattened mode (LFM) optical fibres is presented. A comparison is made between the properties of a three-layer LFM structure and a standard step-index pro. le with the same core size. The obtained results indicate that the effective area of the LFM fibre is about twice as large as that of the standard step-index fibre, but the LFM fibre has less effective ability to filter out the higher order modes than the standard step-index fibre with the same bending radius.
Resumo:
The single-layer and multilayer Sb-rich AgInSbTe films were irradiated by a single femtosecond laser pulse with the duration of 120 fs. The morphological feature resulting from the laser irradiation have been investigated by scanning electron microscopy and atom force microscopy. For the single-layer film, the center of the irradiated spot is a dark depression and the border is a bright protrusion; however, for the multilayer film, the center morphology changes from a depression to a protrusion as the energy increases. The crystallization threshold fluence of the single-layer and the multilayer films is 46.36 mJ/cm(2), 63.74 mJ/cm(2), respectively.
Resumo:
The morphology of materials resulting from laser irradiation of the single-layer and the multilayer amorphous Ge2Sb2Te5 films using 120 fs pulses at 800 nm was observed using scanning electron microscopy and atomic force microscopy. For the single-layer film, the center of the irradiated spot is depression and the border is protrusion, however, for the multilayer film, the center morphology changes from a depression to a protrusion as the increase of the energy. The crystallization threshold fluence of the single-layer and the multilayer film is 22 and 23 mJ/cm(2), respectively. (c) 2005 Elsevier B.V. All rights reserved.
Resumo:
In laser applications, the size of the focus spot can be reduced beyond the diffraction limit with a thin film of strong nonlinear optical Kerr effect. We present a concise theoretical simulation of the device. The origin of the super-resolution is found to be mainly from the reshaping effect due to the strongly nonlinear refraction mediated multi-interference inside the thin film. In addition, both diffraction and self-focusing effects have been explored and found negligible for highly refractive and ultrathin films in comparison with the reshaping effect. Finally, the theoretic model has been verified in experiments with single Ge2Sb2Te5 film and SiN/Si/SiN/Ge2Sb2Te2 multilayer structures. (c) 2006 American Institute of Physics.
Resumo:
近场超分辨纳米薄膜结构可以突破衍射极限实现纳米尺寸信息存储,是下一代海量存储技术的重要方案之一,也是纳米光子学研究中的热点。纳米膜层结构基于激光作用下的非线性局域光学效应实现超分辨。分析了超分辨近场薄膜结构突破衍射极限的光学原理,对超分辨纳米薄膜结构的表面等离子体激发特性、非线性光学特性、近场光学特性和超透镜效应等重要光学性质的最新研究进展做了系统介绍。
Resumo:
Nesta dissertação são apresentados resultados de simulações Monte Carlo de fluorescência de raios X (XRF), utilizando o programa GEANT4, para medidas de espessura de revestimento metálico (Ni e Zn) em base metálica (Fe). As simulações foram feitas para dois tamanhos de espessura para cada metal de revestimento, (5μm e 10μm), com passos de 0,1 μm e 0,001 μm e com 106 histórias. No cálculo da espessura do revestimento foram feitas as aproximações de feixe de raios X monoenegético, com a análise da transmissão apenas da energia do K-alfa e para uma geometria compatível com um sistema real de medição (ARTAX-200). Os resultados mostraram a eficiência da metodologia de simulação e do cálculo da espessura do revestimento, o que permitirá futuros cálculos, inclusive para multirevestimentos metálicos em base metálica.
Resumo:
For the first time, to the best of our knowledge, a radially polarized laser pulse was produced from a passively Q-switched Nd:YAG ceramic microchip laser with a piece of Cr4+:YAG crystal as the saturable absorber and multilayer concentric subwavelength grating as the polarization-selective output coupler. The averaged laser power reached 450 mW with a slope efficiency of 30.2%. The laser pulse had a maximum peak power of 759 W, a minimum pulse duration of 86 ns, and a 6.7 kHz repetition rate at 3.7 W absorbed pump power. The polarization degree of the radially polarized pulse was measured to be as high as 97.4%. Such a radially polarized laser pulse with a high peak power and a short width is important to numerous applications such as metal cutting. (C) 2008 Optical Society of America
Resumo:
Neste trabalho estudamos o problema da segregação de impurezas substitucionais em sistemas nanoestruturados metálicos formados pela justaposição de camadas (multicamadas). Utilizamos o modelo de ligações fortes (tight-binding) com um orbital por sítio para calcular a estrutura eletrônica desses sistemas, considerando a rede cristalina cubica simples em duas direções de crescimento: (001) e (011). Devido à perda de simetria do sistema, escrevemos o hamiltoniano em termos de um vetor de onda k, paralelo ao plano, e um ındice l que denota um plano arbitrario do sistema. Primeiramente, calculamos a estrutura eletrônica do sistema considerando-o formado por átomos do tipo A e, posteriormente, investigamos as modificações nessa estrutura eletrônica ao introduzirmos uma impureza do tipo B em um plano arbitrário do sistema. Calculamos o potencial introduzido por esta impureza levando-se em conta a neutralidade de carga através da regra de soma de Friedel. Calculamos a variação da energia eletrônica total ΔEl como função da posição da impureza. Como substrato, consideramos sistemas com ocupações iguais a 0.94 e 0.54 elétrons por banda, o que dentro do modelo nos permite chamá-los de Nie Cr. As impurezas sao tambem metais de transição - Mn, Fee Co. Em todos os casos investigados, foi verificado que a variação de energia eletrônica total apresenta um comportamento oscilatorio em função da posição da impureza no sistema, desde o plano superficial, até vários planos interiores do sistema. Como resultado, verificamos a ocorrencia de planos mais favoráveis à localização da impureza. Ao considerarmos um número relativamente grande de planos, um caso em particular foi destacado pelo aparecimento de um batimentono comportamento oscilatório de ΔEl. Estudamos também o comportamento da variação da energia total, quando camadas (filmes) são crescidas sobre o substrato e uma impureza do mesmo tipo das camadas é colocada no substrato. Levamos em conta a diferença de tamanho entre os átomos do substrato e os átomos dos filmes. Analisamos ainda a influência da temperatura sobre o comportamento oscilatório da energia total, considerando a expansão de Sommerfeld.