R-parity violation in neutralino decays at an e gamma collider

At an e gamma collider, a selectron (e) over tilde(L,R) may be produced in association with a (lightest) neutralino <(chi)over tilde>(0)(1). Decay of the selectron may be expected to yield a final state with an electron and another <(chi)over tilde>(0)(1). If R-parity is violated, these two neutralinos will decay, giving rise to distinctive signatures, which are identified and studied. (C) 1998 Published by Elsevier Science B.V.

The prop-2-ynyloxy carbonyl function (POC): A new amino-protecting group removable from sulfur-containing peptides by ultrasonic irradiation with tetrathiomolybdate under mild and neutral conditions

The prop-2-ynyloxy carbonyl function (POC) which can be cleaved under mild and neutral conditions in the presence of benzyltriethylammonium tetrathiomolybdate has been developed as a new protecting group for amines. (C) 1999 Elsevier Science Ltd. All rights reserved.

Effect of lithium ion irradiation on the transport and optical properties of Bridgman grown n-type InSb single crystals

Single crystal (100) wafers of n-InSb were implanted with 50 MeV Li3+ ions at various fluences ranging from 10(10) to 10(14) ions/cm(2) at room temperature. Investigations of the optical, electrical, and structural properties of the as-grown, irradiated, annealed wafers were carried out by infrared and Raman spectroscopies, Hall measurements, and high resolution x-ray diffraction (HRXRD). In the case of samples irradiated with an ion fluence of 1.6x10(14) ions/cm(2), electrical measurements at 80 K reveal that there is a decrease in carrier concentration from 8.5x10(15) (for unirradiated) to 1.1x10(15)/cm(3) and an increase in mobility from 5.4x10(4) to 1.67x10(5) cm(2)/V s. The change in carrier concentration is attributed to the creation of electron trap centers induced by ion beam irradiation and the increase in mobility to the formation of electrical inactive complexes. Nevertheless, even with the irradiation at 1.6x10(14) ions/cm(2) fluence the crystalline quality remains largely unaffected, as is seen from HRXRD and Raman studies. (C) 2001 American Institute of Physics.

Solution combustion synthesis of gamma(L)-Bi(2)MoO(6) and photocatalytic activity under solar radiation

The facile method of solution combustion was used to synthesize gamma(L)-Bi(2)MoO(6). The material was crystallized in a purely crystalline orthorhombic phase with sizes varying from 300 to 500 nm. Because the band gap was 2.51 eV, the degradation of wide variety of cationic and anionic dyes was investigated under solar radiation. Despite the low surface area (< 1 m(2)/g) of the synthesized material, gamma(L)-Bi(2)MoO(6) showed high photocatalytic activity under solar radiation due to its electronic and morphological properties. (C) 2011 Elsevier Ltd. All rights reserved.

Formation of amorphous xenon nanoclusters and microstructure evolution in pulsed laser deposited Ti(62.5)Si(37.5) thin films during Xe ion irradiation

As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe(+) ion beam to an ion fluence of about 10(16) ions-cm(-2). Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti(5)Si(3) intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.

Surfactant-mediated Synthesis of Functional Metal Oxide Nanostructures via Microwave Irradiation-assisted Chemical Synthesis

Nanostructured materials have attracted considerable interest in recent years due to their properties which differ strongly from their bulk phase and potential applications in nanoscale electronic and optoelectronic devices. Metal oxide nanostructures can be synthesized by variety of different synthesis techniques developed in recent years such as thermal decomposition, sol-gel technique, chemical coprecipitation, hydrothermal process, solvothermal process, spray pyrolysis, polyol process etc. All the above processes go through a tedious synthesis procedure followed by prolonged heat treatment at elevated temperature and are time consuming. In the present work we describe a rapid microwave irradiation-assisted chemical synthesis technique for the growth of nanoparticles, nanorods, and nanotubes of a variety of metal oxides in the presence of an appropriate surfactant, without the use of any templates The method is simple, inexpensive, and helps one to prepare nanostructures in a very simple way, and in a very short time, measured in minutes. The synthesis procedure employs high quality metalorganic complexes (typically -diketonates) featuring a direct metal-to-oxygen bond in its molecular structure. The complex is dissolved in a suitable solvent, often with a surfactant added, and the solution then subjected to microwave irradiation in a domestic microwave oven operating at 2.45 GHz frequency with power varying from 160-800 W, from a few seconds to a few minutes, leading to the formation of corresponding metal oxides. This method has been used successfully to synthesize nanostructures of a variety of binary and ternary metal oxides such as ZnO, CdO, Fe2O3, CuO, Ga2O3, Gd2O3, ZnFe2O4, etc. There is an observed variation in the morphology of the nanostructures with the change of different parameters such as microwave power, irradiation time, appropriate solvent, surfactant type and concentration. Cationic, anionic, nonionic and polymeric surfactants have been used to generate a variety of nanostructures. Even so, to remove the surfactant, there is either no need of heat treatment or a very brief exposure to heat suffices, to yield highly pure and crystalline oxide materials as prepared. By adducting the metal complexes, the shape of the nanostructures can be controlled further. In this manner, very well formed, single-crystalline, hexagonal nanorods and nanotubes of ZnO have been formed. Adducting the zinc complex leads to the formation of tapered ZnO nanorods with a very fine tip, suitable for electron emission applications. Particle size and their monodispersity can be controlled by a suitable choice of a precursor complex, the surfactant, and its concentration. The resulting metal oxide nanostructures have been characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, FTIR spectroscopy, photoluminescence, and electron emission measurements.

Formation of amorphous xenon nanoclusters and microstructure evolution in pulsed laser deposited Ti62.5Si37.5 thin films during Xe ion irradiation

As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe+ ion beam to an ion fluence of about 1016 ions-cm−2. Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti5Si3 intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.

High energy Li ion irradiation effects in ferroelectric PZT and SBT thin films

The ferroelectric Pb(Zr0.53Ti0.47)O-3 (PZT) and SrBi2Ta2O9 (SBT) thin films were prepared by laser ablation technique. The dielectric analysis, capacitance-voltage, ferroelectric hysteresis and DC leakage current measurements were performed before and after 50 MeV Li3+ ion irradiation. In both thin films, the irradiation produced some amount of amorphisation, considerable degradation in the ferroelectric properties and change in DC conductivity. On irradiation of these thin films, the phase transition temperature [T-c] of PZT decreased considerably from 628 to 508 K, while SBT exhibited a broad and diffuse transition with its T-c decreased from 573 to 548 K. The capacitance-voltage curve at 100 kHz showed a double butterfly loop with a large decrease in the capacitance and switching voltage. There was decrease in the ferroelectric hysteresis loop, remanant polarisation and coercive field. After annealing at a temperature of 673 K for 10 min while PZT partially regained the ferroelectric properties, while SBT did not. The DC conductivity measurements showed a shift in the onset of non-linear conduction region in irradiated SBT. The degradation of ferroelectric properties of the irradiated thin films is attributed to the irradiation-induced partial amorphization and the pinning of the ferroelectric domains by trapped charges. The regaining of properties after annealing is attributed to the thermal annealing of the defects generated during the irradiation. (C) 2003 Elsevier Science B.V. All rights reserved.

N-gamma for rough strip footing using the method of characteristics

By using the method of characteristics, the bearing capacity factor N-gamma was computed for a rough strip footing. The analysis was performed by considering a curved nonplastic wedge under the foundation base bounded by curved slip lines being tangential to the base of the footing at its either edge and inclined at an angle pi/4 - phi/2 with the vertical axis of symmetry. The existing theories in the literature for rough footings, which usually employ a triangular wedge below the footing base, were generally found to provide greater values of N-gamma as compared with the results obtained in this contribution.

Study of the CP property of the Higgs boson at a photon collider using gamma gamma -> t(t)over-bar -> lX

We study the possible effects of CP violation in the Higgs sector on t (t) over bar production at a gammagamma collider. These studies are performed in a model-independent way in terms of six form factors {R(S-gamma), J(S-gamma), R(P-gamma), J(P-gamma), S-t, P-t} which parametrize the CP mixing in the Higgs sector, and a strategy for their determination is developed. We observe that the angular distribution of the decay lepton from t/(t) over bar produced in this process is independent of any CP violation in the tbW vertex and hence best suited for studying CP mixing in the Higgs sector. Analytical expressions are obtained for the angular distribution of leptons in the c.m. frame of the two colliding photons for a general polarization state of the incoming photons. We construct combined asymmetries in the initial state lepton (photon) polarization and the final state lepton charge. They involve CP even (x's) and odd (y's) combinations of the mixing parameters. We study limits up to which the values of x and y, with only two of them allowed to vary at a time, can be probed by measurements of these asymmetries, using circularly polarized photons. We use the numerical values of the asymmetries predicted by various models to discriminate among them. We show that this method can be sensitive to the loop-induced CP violation in the Higgs sector in the minimal supersymmetric standard model.

Effect of irradiation on the microstructure and mechanical behavior of nanocrystalline nickel

The effect of 4.0 MeV proton irradiation on the microstructure and mechanical properties of nanocrystalline (nc) nickel was investigated. The irradiation damage induced in the sample was of the order of 0.004 dpa. Transmission electron microscopy of irradiated samples indicated the presence of dislocation loops within the grains. An increase in hardness and strain-rate sensitivity (m) of nc-Ni with irradiation was noted. The rate-controlling deformation mechanism in irradiated nc-Ni was identified to be interaction of dislocations with irradiation-induced defects. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Gray track formation in KTiOPO4 by swift ion irradiation

Potassium titanyl phosphate single crystals were irradiated with 48 MeV lithium ions at fluences varying from 5×1012 to 1016 ions/cm2. The defects created in the crystal have been characterized using x-ray rocking curve measurements, optical transmittance, and photoluminescence spectroscopy. From x-ray rocking curve studies, the full width at half maximum for the irradiated samples was observed to increase, indicating lattice strain caused by the energetic ions. Optical transparency of these samples was found to decrease upon irradiation. The irradiated samples exhibited a broadband luminescence in the 700–900 nm region, for fluences above 5×1013 ions/cm2. The results indicate that ion-beam-induced optical effects in KTiOPO4 single crystals are very similar to the ones obtained for crystals with “gray tracks,” which are attributed to the electronic transitions in the Ti3+ levels.