Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films

Photoluminescence (PL) from Er-implanted hydrogenated amorphous silicon suboxide (a-SiOX:H(x<2.0)) films was measured. Two luminescence bands with maxima at lambda congruent to 750 nm and lambda congruent to 1.54mum, ascribed to the a-SiOX:H intrinsic emission and Er3+ emission, were observed. Peak intensities of the two bands follow the same trend as a function of annealing temperature from 300 to 1000degreesC. Micro-Raman results indicate that the a-SiOX:H films are a mixture of two phases, an amorphous SiOX matrix and amorphous silicon (a-Si) domains embedded there in. FTIR spectra confirm that hydrogen effusion from a-SiOX:H films occurs during annealing. Hydrogen effusion leads to a reconstruction of the microstructure of a-Si domains, thus having a strong influence on Er3+ emission. Our study emphasizes the role of a-Si domains on Er3+ emission in a-SiOX:H films.

X-ray diffraction analysis on gallium-indium interdiffusion in quantum dot superlattices

Thermal-induced interdiffusion in InAs/GaAs quantum dot superlattices is studied by high-resolution x-ray diffraction rocking curve and photoluminescence techniques. With increasing annealing temperatures, up to 300 meV a blueshift of the emission peak position and down to 16.6 meV a narrowing of the line width are found in the photoluminescence spectra, and respective intensity of the higher-order satellite peaks to lower-order ones in the x-ray rocking curves decreases. Dynamical theory is employed to simulate the measured x-ray diffraction data. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness and stress variations caused by interdiffusion are taken into account. It is found that the significant In-Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The estimated diffusion coefficient is 1.8 x 10(-17) cm(2) (.) s(-1) at 650 degreesC, 3.2 x 10(-17) cm(2 .) s(-1) at 750 degreesC, and 1.2 x 10(-14) cm(2 .) s(-1) at 850 degreesC.

Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer

We have studied the effects of postgrowth rapid thermal annealing on the optical properties of 3-nm-height InAs/GaAs quantum dots covered by 3-nm-thick InxGa1-xAs (x = 0, 0.1, and 0.2) overgrowth layer. At higher annealing temperature (T greater than or equal to 750 degreesC), the photoluminescence peak of InGaAs layer has been observed at lower-energy side of the InAs quantum-dot peak. In addition, the blueshift in photoluminescence (PL) emission energy is found to he similar for all samples with increasing the annealing temperature from 650 to 850 degreesC. However, the trend of narrowing of photoluminescence linewidth is significantly different for InAs quantum dots with different In mole fractions in InGaAs overgrowth layer. These results suggest that the intermixing in the lateral direction plays an important role in helping to understand the modification of optical properties induced by rapid thermal annealing. (C) 2000 Elsevier Science B.V. All rights reserved.

Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice

Postgrowth rapid thermal annealing was used to study the relaxation mechanism and optical properties of InGaAs/GaAs self-assembled quantum dots superlattice grown by molecular beam epitaxy. It is found that a significant narrowing of the luminescence linewidth (from 80 to 42 meV) occurs together with about 86 meV blue shift at annealing temperature up to 950 degrees C. Double crystal X-ray diffraction measurements show that the intensity of the satellite diffraction peak, which corresponds to the quantum dots superlattice, decreased with the increasing annealing temperature and disappeared at 750 degrees C, but recovered and increased again at higher annealing temperatures. This behavior can be explained by two competing relaxation mechanisms; interdiffusion and favored migration. The study indicates that a suitable annealing treatment can improve the structural properties of the quantum dots superlattice. (C) 2000 Elsevier Science B.V. All rights reserved.

Exciton dynamics in self-organized InAs/GaAs quantum dots

Using a newly-developed population mixing technique we have studied the exciton dynamics in self-organized InAs/GaAs quantum dots (QDs). It is found that the exciton lifetime in self-organized InAs/GaAs QDs is around 1 ns, almost independent of InAs layer thickness. The temperature dependence of the exciton lifetime varies from sample to sample, but no obvious experimental evidence was found that the lifetime is related to the delta-function of density of states in QDs. We have also found that the population mixing technique can be used to directly reveal the band-filling effect in the excited states of the QDs.

Influence of Fe3+ on perovskite oxides: La2/3Ca1/3Mn1-xFexO3

The structure and magnetoresistance properties in sintered samples of La-2/3 Ca-1/3 Mn1-x FexO3 (0 less than or equal to x less than or equal to 0.84) are studied by using Mossbauer spectroscopy, XRD and magnetic measurement. There are antiferromagnetic interactions between Fe and its nearest neighbors (Fe, Mn) when 0 less than or equal to x less than or equal to 0.67, which are important factors influencing the double-exchange between Mn3+ and Mn4+, Curie temperature, magnetic moment and GMR. It is suggested that the Mn3+(Fe3+)/Mn4+ system also consists of magnetic clusters with different sizes.

Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters

Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters are studied. Four SiGe/Si single wells have been grown on Si(001) at 750 degrees C by disilane and solid Ge molecular beam epitaxy with varied disilane cracking-temperatures. Intense NP and TO-phonon replicas are detected up to 70 K in the photoluminescence spectra and the activation energy of the thermal quenching of the photoluminescence is 28 +/- 4 meV. The high growth temperature and purposeful introduction of fluctuation of structural parameters may be responsible for the improvement of the thermal quenching property.

Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature

Structural properties of SiGe/Si single wells are studied by double-crystal X-ray diffraction. Four SiGe/Si single wells have been grown on Si (0 0 1) at 750 degrees C by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature. Using dynamic theory, together with kinematic theory and the specific growth procedure adopted, structural parameters in the multilayer structure are determined precisely. The results are compared with those obtained from PL and XTEM as well as AES measurements. It is found that disilane adsorption is dependent on cracking temperature as well as Ge incorporation. Disilane adsorption is increased by cracking disilane while it decreased with Ge incorporation (C) 1998 Elsevier Science B.V. All rights reserved.

多媒体节目时序描述的完全性和协调性

完全性和协调性是形式规范的两个基本性质 .针对不同的形式规范 ,完全性和协调性的定义可能是不同的 .该文首先根据通信顺序进程的理论 ,把一个多媒体流用两个瞬时事件表示 ,并且定义了时间区间向量的概念和在它之上的一些运算 .基于这些准备工作 ,文中给出了多媒体系统中媒体对象时序关系描述的完全性和协调性的形式定义 .由于文中讨论的时序描述语言较简单 ,但是对于多媒体领域又是足够的 ,因此 ,与相关工作比较 ,该文研究的完全性和协调性的形式定义更直观 ,判定算法也更高效

Partial oxidation reforming of biomass fuel gas over nickel-based monolithic catalyst with naphthalene as model compound

With naphthalene as biomass tar model compound, partial oxidation reforming (with addition of O-2) and dry reforming of biomass fuel gas were investigated over nickel-based monoliths at the same conditions. The results showed that both processes had excellent performance in upgrading biomass raw fuel gas. Above 99% of naphthalene was converted into synthesis gases (H-2+CO). About 2.8 wt% of coke deposition was detected on the catalyst surface for dry reforming process at 750 degrees C during 108 h lifetime test. However, no Coke deposition was detected for partial oxidation reforming process, which indicated that addition of O-2 can effectively prohibit the coke formation. O-2 Can also increase the CH4 conversion and H-2/CO ratio of the producer gas. The average conversion of CH4 in dry and partial oxidation reforming process was 92% and 95%, respectively. The average H-2/CO ratio increased from 0.95 to 1.1 with the addition of O-2, which was suitable to be used as synthesis gas for dimethyl ether (DME) synthesis.

Bio-syngas production from biomass catalytic gasification

A promising application for biomass is liquid fuel synthesis, such as methanol or dimethyl ether (DME). Previous studies have studied syngas production from biomass-derived char, oil and gas. This study intends to explore the technology of syngas production from direct biomass gasification, which may be more economically viable. The ratio of H-2/CO is an important factor that affects the performance of this process. In this study, the characteristics of biomass gasification gas, such as H-2/CO and tar yield, as well as its potential for liquid fuel synthesis is explored. A fluidized bed gasifier and a downstream fixed bed are employed as the reactors. Two kinds of catalysts: dolomite and nickel based catalyst are applied, and they are used in the fluidized bed and fixed bed, respectively. The gasifying agent used is an air-steam mixture. The main variables studied are temperature and weight hourly space velocity in the fixed bed reactor. Over the ranges of operating conditions examined, the maximum H-2 content reaches 52.47 vol%, while the ratio of H-2/CO varies between 1.87 and 4.45. The results indicate that an appropriate temperature (750 degrees C for the current study) and more catalyst are favorable for getting a higher H-2/CO ratio. Using a simple first order kinetic model for the overall tar removal reaction, the apparent activation energies and pre-exponential factors are obtained for nickel based catalysts. The results indicate that biomass gasification gas has great potential for liquid fuel synthesis after further processing.

Spectral relationship of photoinduced refractive index and absorption changes in fulgide films

Fulgides are one kind of organic photochromic compound, which are famous for their thermal irreversibility. In this report, from the difference spectra of the absorption A() of one kind of pyrrylfulgide, the spectral refractive index change n() was calculated by the Kramers-Kronig relation (KKR), and a good correlation of theoretically derived values and the experimental values of the n measured by a modified Michelson interferometer was found. Further, it is demonstrated that it was possible to calculate the spectral dependence of diffraction efficiency from the easily accessible absorption changes. This method will be a useful tool for the characterization and optimization of fulgide films. The results show that the diffraction efficiency is high at 488 and 750 nm, where the absorption is very small, so we can realize non-destructive reconstruction.

稀土在铝酸盐中发光性质的研究

分别采用溶胶凝胶方法，固相合成法，燃烧法，均相沉淀法在不同的铝酸盐中研究了稀土离子的发光性质及稀土离子之间的能量传递。并对各种方法合成的稀土铝酸盐的发光性能进行比较。全新方法——均相沉淀法合成的稀土铝酸盐既克服了传统的溶胶凝胶方法中有机碳对还原气氛的影响，又能够在较低温度下，较短的时间内合成铝酸盐，克服铝酸盐合成温度高时间长的弊病。以这种方法在750 ℃，4h即可合成发光性能较好的铝酸盐磷光体。系统的合成铝酸盐MAl_2O_4:Eu~(2+), RE~(3+) （M = Mg, Ca, Sr, Ba; RE = Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu）的发光及长余辉性质，发现Pr, Nd, Dy, Ho, Er均能够有效的延长MAl_2O_4:Eu~(2+)的发光寿命，同时增强MAl_2O_4:Eu~(2+)的发光亮度。其中以Dy, Eu共掺的铝酸盐磷光体的寿命最长。对于碱土金属，虽然同属于鳞石英结构，但其晶体结构存在明显差别：Mgl_2O_4:Eu~(2+)，RE~(3+)隶属于立方晶系，Ca Al_2O_4:Eu~(2+)，RE~(3+)和β－SrAl_2O_4:Eu~(2+)，RE~(3+)隶属于单斜晶系，Ba Al_2O_4:Eu~(2+), RE~(3+)隶属于六角晶系。所以在发光性能及长余辉性能上表现出不同的特性：Mg Al_2O_4:Eu~(2+)，RE~(3+) 和Ba Al_2O_4:Eu~(2+), RE~(3+)的发光分别为480nm, 500nm, 界于Ca Al_2O_4:Eu~(2+), RE~(3+) (436 nm)和 β－SrAl_2O_4:Eu~(2+)，RE~(3+) (520 nm)之间。而 Ca Al_2O_4:Eu~(2+)，RE~(3+)和β－SrAl_2O_4:Eu~(2+)，RE~(3+)由于同属于单斜晶系，所以其发光满足原子序数的变化规律：当某一原子取代较小的其他原子时，发光波长向短波移动。而且Ca Al_2O_4:Eu~(2+)，RE~(3+)和β－SrAl_2O_4:Eu~(2+)，RE~(3+)都具有较强的发光及余辉。发现新型长余辉发光物质碱土铝酸盐MA:Eu~(2+)，RE~(3+)，波长位于489nm，是一种发光和余辉都极强的发光材料。而且碱土铝酸盐MA:Eu~(2+)，RE~(3+)能与β－SrAl_2O_4:Eu~(2+)，RE~(3+)生成非常有效的混晶化合物，从而使其发光在489nm～520 nm的波长范围内移动而不影响化合物的发光性能。研究了SrGdAlO_4:RE~(3+) （RE = Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb, Lu）的发光现象，观察到SrGdAlO_4:RE~(3+) （RE = Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er）的特征发光，由于Tm, Yb, Lu 在可见区无吸收，所以观察不到它们的发光。讨论并研究了SrGdAlO_4:RE~(3+) 体系的Gd~(3+) → Gd~(3+)，Gd~(3+) → RE~(3+)的能量传递机理，总结了RE~(3+)对Gd~(3+)的激发能的俘获速率次序依次为： Eu ＞ Tb ＞Er ＞ Dy ＞ Sm ＞ Ho ＞ Nd，能量传递主要是通过偶极－偶极相互作用实现的。观察到SrGdAlO_4:Tb~(3+)长余辉发光。

反气相色谱研究氯化聚乙烯共混物的相容性

对聚合物共混体系相容性的表征已有许多方法，但用反气相色谱（IGC）来测定相容共混物的相分离，进而表征共混物的相容性是一种新的尝试。本工作首先肯定了IGC是测定高聚物各种转变和其它结构变化的可靠方法，并对它的制样方法，实验技术以及实验结果的表示做了适当的改进。对本工作的主要研究对象，粉末固相氯化的氯化聚乙烯（CPE）的核磁共振，红外光谱和裂解色谱的分析结果表明，氯含量不超过50%的粉末CPE的链结构是由CH_2和CHCl单元所构成，在氯含量750%的样品中才含有极少量的CCl_2单元，故样品的均匀较好，适合于本工作之用。通过共混样与其组份和组份的物理掺合物试样保留特性的比较，并结合IGC的原理和DSC的研究结果的分析，阐明了聚合物共混体系试样所特有的两个转析点是由体系的相分离所引起的。在实验过程中发现了粉末混试样的保留峰形和峰高随时间或温度发生异常的变化，认为都与试样的内部结构变化和相分离的机理有关。研究了三个不同氯含量的CPE之间的共混体系的相分离过程。得到了它们的相图。等温相分离的分离的研究表明相分离过程可分成三个阶段，称之为“诱导期”，“加速期”和“渐稳期”，对CPE/PMMA的研究，进一步肯定了IGC作为测定相分离点方法的可靠性，还发现IGC能检测到结晶/非晶共混物体系结晶熔融后进一步与无定形相的混合过程。此外，对IGC测定相分离和相混合的本质进行了探讨。