989 resultados para 2 sigma


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The one-electron reduced local energy function, t ~ , is introduced and has the property < tL)=(~>. It is suggested that the accuracy of SL reflects the local accuracy of an approximate wavefunction. We establish that <~~>~ <~2,> and present a bound formula, E~ , which is such that where Ew is Weinstein's lower bound formula to the ground state. The nature of the bound is not guaranteed but for sufficiently accurate wavefunctions it will yield a lower bound. ,-+ 1'S I I Applications to X LW Hz. and ne are presented.

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Tesis (Maestría en Ciencias de la Administración con especialidad en Producción y Calidad) U.A.N.L. Facultad de Ingeniería Mecánica y Eléctrica, 1995

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Tesis ( Maestría en Ciencias de la Ingeniería de Manufactura con Especialidad en Diseño del Producto) U.A.N.L.

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Tesis (Maestro en Ciencias de la Ingeniería de Manufactura con Especialidad en Automatización) U.A.N.L.

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Tesis (Doctor en Ingeniería Física Industrial) UANL, 2013.

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Dans cette thèse, nous analysons les propriétés géométriques des surfaces obtenues des solutions classiques des modèles sigma bosoniques et supersymétriques en deux dimensions ayant pour espace cible des variétés grassmanniennes G(m,n). Plus particulièrement, nous considérons la métrique, les formes fondamentales et la courbure gaussienne induites par ces surfaces naturellement plongées dans l'algèbre de Lie su(n). Le premier chapitre présente des outils préliminaires pour comprendre les éléments des chapitres suivants. Nous y présentons les théories de jauge non-abéliennes et les modèles sigma grassmanniens bosoniques ainsi que supersymétriques. Nous nous intéressons aussi à la construction de surfaces dans l'algèbre de Lie su(n) à partir des solutions des modèles sigma bosoniques. Les trois prochains chapitres, formant cette thèse, présentent les contraintes devant être imposées sur les solutions de ces modèles afin d'obtenir des surfaces à courbure gaussienne constante. Ces contraintes permettent d'obtenir une classification des solutions en fonction des valeurs possibles de la courbure. Les chapitres 2 et 3 de cette thèse présentent une analyse de ces surfaces et de leurs solutions classiques pour les modèles sigma grassmanniens bosoniques. Le quatrième consiste en une analyse analogue pour une extension supersymétrique N=2 des modèles sigma bosoniques G(1,n)=CP^(n-1) incluant quelques résultats sur les modèles grassmanniens. Dans le deuxième chapitre, nous étudions les propriétés géométriques des surfaces associées aux solutions holomorphes des modèles sigma grassmanniens bosoniques. Nous donnons une classification complète de ces solutions à courbure gaussienne constante pour les modèles G(2,n) pour n=3,4,5. De plus, nous établissons deux conjectures sur les valeurs constantes possibles de la courbure gaussienne pour G(m,n). Nous donnons aussi des éléments de preuve de ces conjectures en nous appuyant sur les immersions et les coordonnées de Plücker ainsi que la séquence de Veronese. Ces résultats sont publiés dans la revue Journal of Geometry and Physics. Le troisième chapitre présente une analyse des surfaces à courbure gaussienne constante associées aux solutions non-holomorphes des modèles sigma grassmanniens bosoniques. Ce travail généralise les résultats du premier article et donne un algorithme systématique pour l'obtention de telles surfaces issues des solutions connues des modèles. Ces résultats sont publiés dans la revue Journal of Geometry and Physics. Dans le dernier chapitre, nous considérons une extension supersymétrique N=2 du modèle sigma bosonique ayant pour espace cible G(1,n)=CP^(n-1). Ce chapitre décrit la géométrie des surfaces obtenues des solutions du modèle et démontre, dans le cas holomorphe, qu'elles ont une courbure gaussienne constante si et seulement si la solution holomorphe consiste en une généralisation de la séquence de Veronese. De plus, en utilisant une version invariante de jauge du modèle en termes de projecteurs orthogonaux, nous obtenons des solutions non-holomorphes et étudions la géométrie des surfaces associées à ces nouvelles solutions. Ces résultats sont soumis dans la revue Communications in Mathematical Physics.

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Four distinct peaks are observed at 140, -26, -132 and -140°C in the sigma x* against T-1 plot between 200 and - 196°C for (NH4)3H(SO4)2, corresponding to four different phase transitions of which the one at -26°C is reported here for the first time. Data on doped samples reveal the charge transport mechanism in the crystal.

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This work presents a wideband low-distortion sigmadelta analog-to-digital converter (ADC) for Wireless Local Area Network (WLAN) standard. The proposed converter makes use of low-distortion swing suppression SDM architecture which is highly suitable for low oversampling ratios to attain high linearity over a wide bandwidth. The modulator employs a 2-2 cascaded sigma-delta modulator with feedforward path with a single-bit quantizer in the first stage and 4-bit in the second stage. The modulator is designed in TSMC 0.18um CMOS technology and operates at 1.8V supply voltage. Simulation results show that, a peak SNDR of 57dB and a spurious free dynamic range (SFDR) of 66dB is obtained for a 10MHz signal bandwidth, and an oversampling ratio of 8.

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The demand for new telecommunication services requiring higher capacities, data rates and different operating modes have motivated the development of new generation multi-standard wireless transceivers. In multistandard design, sigma-delta based ADC is one of the most popular choices. To this end, in this paper we present cascaded 2-2-2 reconfigurable sigma-delta modulator that can handle GSM, WCDMA and WLAN standards. The modulator makes use of a low-distortion swing suppression topology which is highly suitable for wide band applications. In GSM mode, only the first stage (2nd order Σ-Δ ADC) is used to achieve a peak SNDR of 88dB with oversampling ratio of 160 for a bandwidth of 200KHz and for WCDMA mode a 2-2 cascaded structure (4th order) is turned on with 1-bit in the first stage and 2-bit in the second stage to achieve 74 dB peak SNDR with over-sampling ratio of 16 for a bandwidth of 2MHz. Finally, a 2-2-2 cascaded MASH architecture with 4-bit in the last stage is proposed to achieve a peak SNDR of 58dB for WLAN for a bandwidth of 20MHz. The novelty lies in the fact that unused blocks of second and third stages can be made inactive to achieve low power consumption. The modulator is designed in TSMC 0.18um CMOS technology and operates at 1.8 supply voltage

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This work presents a triple-mode sigma-delta modulator for three wireless standards namely GSM/WCDMA and Bluetooth. A reconfigurable ADC has been used to meet the wide bandwidth and high dynamic range requirements of the multi-standard receivers with less power consumption. A highly linear sigma-delta ADC which has reduced sensitivity to circuit imperfections has been chosen in our design. This is particularly suitable for wide band applications where the oversampling ratio is low. Simulation results indicate that the modulator achieves a peak SNDR of 84/68/68 dB over a bandwidth of 0.2/3.84/1.5 MHz with an oversampling ratio 128/8/8 in GSM/WCDMA/Bluetooth modes respectively

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This paper presents a cascaded 2-2-2 reconfigurable sigma-delta modulator that can handle GSM, WCDMA and WLAN standards. The modulator makes use of a low-distortion swing suppression topology which is highly suitable for wide band applications. In GSM mode, only the first stage (2nd order Σ-Δ ADC) is turned on to achieve 88dB dynamic range with oversampling ratio of 160 for a bandwidth of 200KHz; in WCDMA mode a 2-2 cascaded structure (4th order) is turned on with 1-bit in the first stage and 2-bit in the second stage to achieve 74 dB dynamic range with oversampling ratio of 16 for a bandwidth of 2MHz and a 2-2-2 cascaded MASH architecture with a 4-bit in the last stage to achieve a dynamic range of 58dB for a bandwidth of 20MHz. The novelty lies in the fact that unused blocks of second and third stages can be switched off taking into considerations like power consumption. The modulator is designed in TSMC 0.18um CMOS technology and operates at 1.8 supply voltage.

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We have created a slideshow on Open Source, and have created a reference list and poster for it.

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Time-resolved studies of the reaction of silylene, SiH2, with N-2 have been attempted at 296, 417, and 484 K, using laser flash photolysis to generate and monitor SiH2. No conclusive evidence for reaction could be found even with pressures of N-2 of 500 Torr. This enables us to set upper limits of ca. 3 x 10(-15) cm(3) molecule(-1) s(-1) for the second-order rate constants. A lower limit for the activation energy, E-a, of ca. 47 kJ mol(-1) is also derived. Ab initio calculations at the G3 level indicate that the only SiH2N2 species of lower energy than the separated reactants is the H2Si...N-2 donor-acceptor (ylid) species with a relative enthalpy of -26 kJ mol(-1), insufficient for observation of reaction under the experimental conditions. Ten bound species on the SiH2N2 surface were found and their energies calculated as well as those of the potential dissociation products: HSiN + NH((3)Sigma(-)) and HNSi + NH((3)Sigma(-)). Additionally two of the transition states involving cyclic-SiH2N2 (siladiazirine) were explored. It appears that siladiazirine is neither thermodynamically nor kinetically stable. The findings indicate that Si-N-d bonds (where N-d is double-bonded nitrogen) are not particularly strong. An unexpected cyclic intermediate was found in the isomerization of silaisocyanamide to silacyanamide.

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A new layered ammonium manganese(II) diphosphate, (NH4)(2)[Mn-3(P2O7)(2)(H2O)(2)], has been synthesised under solvothermal conditions at 433 K in ethylene glycol and the structure determined at 293 K using single-crystal X-ray diffraction data (M-r = 584.82, monoclinic, space group P2(1)/a, a = 9.4610( 8), b = 8.3565( 7), c = 9.477(1) Angstrom, beta = 99.908(9) degrees, V = 738.07 Angstrom(3), Z = 2, R = 0.0351 and R-w = 0.0411 for 1262 observed data (I > 3(sigma(I))). The structure consists of chains of cis- and trans-edge sharing MnO6 octahedra linked via P2O7 units to form layers of formula [Mn3P4O14(H2O)(2)](2-) in the ab plane. Ammonium ions lie between the manganese-diphosphate layers. A network of interlayer and ammonium-layer based hydrogen bonding holds the structure together. Magnetic measurements indicate Curie - Weiss behaviour above 30 K with mu(eff) = 5.74(1) mu(B) and theta = -23(1) K, consistent with the presence of high-spin Mn2+ ions and antiferromagnetic interactions. However, the magnetic data reveal a spontaneous magnetisation at 5 K, indicating a canting of Mn2+ moments in the antiferromagnetic ground state. On heating (NH4)(2)[Mn-3(P2O7)(2)(H2O)(2)] in water at 433 K under hydrothermal conditions, Mn-5(HPO4)(2)(PO4)(2).4H(2)O, synthetic hureaulite, is formed.