Emission characteristics of a homologous series of bimesogenic liquid-crystal lasers.

In this study we have fabricated eight different liquid-crystal lasers using the same gain medium but different homologues from the bimesogenic series alpha-(2',4-difluorobiphenyl-4'-yloxy)-omega-(4-cyanobiphenyl-4'-yloxy)alkanes, whereby the number of methylene units in the spacer chain varied from n=5 to n=12. To quantify the performance of these lasers, the threshold energy and the slope efficiency were extracted from the input-output characteristics of each laser. A clear odd-even effect was observed when both the excitation threshold and the slope efficiency were plotted as a function of the number of methylene units in the spacer chain. In all cases, the bimesogen lasers for which n is even exhibit lower threshold energies and higher slope efficiencies than those for which n is odd. These results are then interpreted in terms of the macroscopic physical properties of the liquid-crystalline compounds. In accordance with a previous study [S. M. Morris, A. D. Ford, M. N. Pivnenko, O. Hadeler, and H. J. Coles, Phys. Rev. E. 74, 061709 (2006)], a combination of a large birefringence and high order parameters are found, in the most part, to correlate with low-threshold energy and high slope efficiency. This indicates that the threshold and slope efficiency are dominated by the host macroscopic properties as opposed to intermolecular interactions between the dye and the liquid crystal. However, certain differences in the slope efficiency could not be explained by the birefringence and order parameter values alone. Instead, we find that the slope efficiency is further increased by increasing the elastic constants of the liquid-crystal host so as to decrease the scattering losses incurred by local distortions in the director field under high-energy optical excitation.

Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors.

Surface-architecture-controlled ZnO nanowires were grown using a vapor transport method on various ZnO buffer film coated c-plane sapphire substrates with or without Au catalysts. The ZnO nanowires that were grown showed two different types of geometric properties: corrugated ZnO nanowires having a relatively smaller diameter and a strong deep-level emission photoluminescence (PL) peak and smooth ZnO nanowires having a relatively larger diameter and a weak deep-level emission PL peak. The surface morphology and size-dependent tunable electronic transport properties of the ZnO nanowires were characterized using a nanowire field effect transistor (FET) device structure. The FETs made from smooth ZnO nanowires with a larger diameter exhibited negative threshold voltages, indicating n-channel depletion-mode behavior, whereas those made from corrugated ZnO nanowires with a smaller diameter had positive threshold voltages, indicating n-channel enhancement-mode behavior.