Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth

In this paper, we show room temperature operation of a quantum well infrared photodetector (QWIP) using lateral conduction through ohmic contacts deposited at both sides of two n-doped quantum wells. To reduce the dark current due to direct conduction in the wells, we apply an electric field between the quantum wells and two pinch-off Schottky gates, in a fashion similar to a field effect device. Since the normal incidence absorption is strongly reduced in intersubband transitions in quantum wells, we first analyze the response of a detector based on quantum dots (QD). This QD device shows photocurrent signal up to 150 K when it is processed in conventional vertical detector. However, it is possible to observe room temperature signal when it is processed in a lateral structure. Finally, the room temperature photoresponse of the QWIP is demonstrated, and compared with theory. An excellent agreement between the estimated and measured characteristics of the device is found

Twinning and grain subdivision during dynamic deformation of a Mg AZ31 sheet alloy at room temperature

The microstructural evolution of an AZ31 rolled sheet during dynamic deformation at strain rates of ∼103 s−1 has been investigated by electron backscatter diffraction, X-ray and neutron diffraction. The influence of orientation on the predominant deformation mechanisms and on the recovery processes taking place during deformation has been systematically examined. The results have been compared with those corresponding to the same alloy tested quasi-statically under equivalent conditions. It has been found that strain rate enhances the activation of extension twinning dramatically, while contraction and secondary twinning are not significantly influenced. The polarity of extension twinning is even reversed in some grains under selected testing conditions. Significant grain subdivision by the formation of geometrically necessary boundaries (GNBs) takes place during both quasi-static and dynamic deformation of this AZ31 alloy. It is remarkable that GNBs of high misorientations form even at the highest strain rates. The phenomenon of recovery has been found to be orientation dependent

Gas sensor based on room temperature optical properties of Surface QDs

Self-organized InGaAs QDs are intensively studied for optoelectronic applications. Several approaches are in study to reach the emission wavelengths needed for these applications. The use of antimony (Sb) in either the capping layer or into the dots is one example. However, these studies are normally focused on buried QD (BQD) where there are still different controversial theories concerning the role of Sb. Ones suggest that Sb incorporates into the dot [1], while others support the hypothesis that the Sb occupies positions surrounding the dot [2] thus helping to keep their shape during the capping growth.