Demonstration of time division demultiplexing from 40Gb/s to 10Gb/s via polarisation switching in a semiconductor optical amplifier

An all-optical polarization rotation technique was demonstrated for demultiplexing a 40 Gb/s return-to-zero optical time division de/multiplexing (OTDM) signal. A sensitivity penalty of 3.5 dB was achieved for the total multiplexing/demultiplexing process from 10Gb/s to 40 Gb/s and back again.

MOS and bipolar gated thyristor: A thyristor with IGBT switching characteristics

The IGBT has become the device of choice in many high-voltage-power electronic applications, by virtue of combining the ease of MOS gate control with an acceptable forward voltage drop. However, designers have retained an interest in MOS gated thyristor structures which have a turn-off capability. These offer low on-state losses as a result of their latching behaviour. Recently, there have been various proposals for dual-gate devices that have a thyristor on-state with IGBT-like switching. Many of these dual gated structures rely on advanced MOS technology, with inherent manufacturing difficulties. The MOS and bipolar gated thyristor offers all the advantages of dual gated performance, while employing standard IGBT processing techniques. The paper describes the MBGT in detail, and presents experimental and simulation results for devices based on realistic commercial processes. It is shown that the MBGT represents a viable power semiconductor device technology, suitable for a diverse range of applications. © IEE, 1998.

Switching speed enhancement of the LDMOSFETs using partial-SOI technology

To overcome reduced breakdown voltage and self-heating effects inherent in silicon-on-insulator (SOI) power integrated circuits while still maintaining good isolation between low power CMOS circuits and the high power cells, partial SOI (PSOI) technology has been proposed. PSOI devices make use of both buried oxide and substrate depletion to support the breakdown voltage. 2D analyses and modeling of parasitic capacitances in PSOI structures show that PSOI-lightly doped MOSFETs can increase the switching speed by as much as four times compared to conventional SOI structures, making them very attractive for high switching applications.

1 × 4 space switching and simultaneous all-optical wavelength conversion at 2.488Gbit/s using a single monolithically integrated multiwavelength laser

A novel InGaAs/InGaAsP/InP integrated multiwavelength grating cavity laser is presented, which has been used to demonstrate space switching and simultaneous all-optical wavelength conversion at bit rates of 2.488 Gbit/s. This has been achieved using a single monolithically integrated device without the need for post-filtering to separate the converted signal from the input.

All-optical switching in a vertical coupler space switch employing photocarrier-induced nonlinearity

A novel compact integrated nonlinear optical switch is demonstrated. Using a high-power picosecond pulse of 5-ps pulsewidth and 250-MHz repetition rate, all-optical switching with a contrast ratio of 23 dB has been achieved using an in-fiber input power < 14 dBm (100 pJ/pulse). The switch speed depends on the carrier sweep-out time, which can be reduced to the 10 ps range by either applying a reverse bias or by introduction of carrier recombination centers in the active layer.

Enhanced flexoelectric switching behaviour in the chiral nematic phase

In order to develop materials that exhibit enhanced flexoelectric switching in the chiral nematic phase we have identified mesogenic units that display inherently strong flexoelectric coupling capabilities. Here we examine the oxycyanobiphenyl (OCB) moiety: homologues from the nOCB series exhibit significant electro-optic switching effects when doped with a highly chiral additive. Here we have examined lower dielectric anisotropy materials, since they allow the flexoelectric response to be extended to high field amplitudes. We show that dielectric coupling strength can be low in symmetric bimesogenic molecules. The flexoelectric response of such a molecular structure is tested by doping a homologue from the series CBOnOCB with a chiral additive: very significantly we find that the optic axis is rotated through 2φ=45° in <50 μs on reversing the polarity of the field (amplitude E=±6 V μm-1). Subsequently we have synthesized room temperature chiral nematic materials that exhibit 2φ≥90° at E≈10 V μm-1. © 2001 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint, a member of the Taylor & Francis Group.

Low-cost, scalable optical packet switching networks with multi-wavelength labels

We propose a self-forwarding packet-switched optical network with bit-parallel multi-wavelength labels. We experimentally demonstrate transmission of variable-length optical packets over 80 km of fiber and switching over a 1×4 multistage switch with two stages. © 2007 Optical Society of America.

Switching aspects of hybrid semiconductor power devices

A hybrid semiconductor power device has been designed which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between an IGBT and a thyristor mode of operation. This paper discusses aspects of the switching behaviour of this and of similar devices. Simulation results of an example structure are presented and conceivable developments in the switching characteristics of hybrid devices are discussed.

Switching aspects of hybrid semiconductor power devices

A hybrid semiconductor power device has been designed which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between an IGBT and a thyristor mode of operation. This paper discusses aspects of the switching behaviour of this and of similar devices. Simulation results of an example structure are presented and conceivable developments in the switching characteristics of hybrid devices are discussed.

21 Port self wavelength switching of 40 Gb/s spectral-amplitude-encoded DPSK signals

Ultrafast self-switching of spectral-amplitude-encoded 40 Gb/s DPSK signals is demonstrated for the first time. Switching between 21 ports with 15nm maximum bin separation is achieved using a single correlator based on HNLF and an AWG. © 2009 IEEE.

Numerical analysis of the current and voltage sharing issues for resistive fault current limiter using YBCO coated conductors

YBaCuO-coated conductors offer great potential in terms of performance and cost-saving for superconducting fault current limiter (SFCL). A resistive SFCL based on coated conductors can be made from several tapes connected in parallel or in series. Ideally, the current and voltage are shared uniformly by the tapes when quench occurs. However, due to the non-uniformity of property of the tapes and the relative positions of the tapes, the currents and the voltages of the tapes are different. In this paper, a numerical model is developed to investigate the current and voltage sharing problem for the resistive SFCL. This model is able to simulate the dynamic response of YBCO tapes in normal and quench conditions. Firstly, four tapes with different Jc 's and n values in E-J power law are connected in parallel to carry the fault current. The model demonstrates how the currents are distributed among the four tapes. These four tapes are then connected in series to withstand the line voltage. In this case, the model investigates the voltage sharing between the tapes. Several factors that would affect the process of quenches are discussed including the field dependency of Jc, the magnetic coupling between the tapes and the relative positions of the tapes. © 2010 IEEE.

Ultrafast switching liquid crystals for electro-optic transmissive and reflective displays and microscopic lasers

We have used novel liquid crystals with extremely large flexoelectric coefficients in a range of ultra-fast photonic/display modes, namely 1) the uniform lying helix, that leads to in-plain switching, birefringence based displays with 100 μs switching times at low fields, i.e.2-5 V/μm, wide viewing angle and analogue or grey scale capability, 2) the uniform standing helix, using planar surface alignment and in-plane fields, with sub ms response times and optical contrasts in excess of 5000:1 with a perfect black "off state", 3) the wide temperature range blue phase that leads to field controlled reflective color and 4) high slope efficiency, wide wavelength range tunable narrow linewidth microscopic liquid crystal lasers.

Solid-state memories based on ferroelectric tunnel junctions.

Ferroic-order parameters are useful as state variables in non-volatile information storage media because they show a hysteretic dependence on their electric or magnetic field. Coupling ferroics with quantum-mechanical tunnelling allows a simple and fast readout of the stored information through the influence of ferroic orders on the tunnel current. For example, data in magnetic random-access memories are stored in the relative alignment of two ferromagnetic electrodes separated by a non-magnetic tunnel barrier, and data readout is accomplished by a tunnel current measurement. However, such devices based on tunnel magnetoresistance typically exhibit OFF/ON ratios of less than 4, and require high powers for write operations (>1 × 10(6) A cm(-2)). Here, we report non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as ∼1 × 10(4) A cm(-2) at room temperature by storing data in the electric polarization direction of a ferroelectric tunnel barrier. The junctions show large, stable, reproducible and reliable tunnel electroresistance, with resistance switching occurring at the coercive voltage of ferroelectric switching. These ferroelectric devices emerge as an alternative to other resistive memories, and have the advantage of not being based on voltage-induced migration of matter at the nanoscale, but on a purely electronic mechanism.

Switching characteristics of diamond-based m-i-p+ diodes in power electronic applications

Modeling and numerical analysis of diamond m-i-p+ diode have been performed for static and transient analysis using TCAD Sentaurus platform. The simulation results are compared with experimental measurements. Prediction of transient turn-off characteristics of diamond m-i-p+ diode at high temperature is performed for the first time. It was found that unlike conventional Si diode, peak reverse current in diamond m-i-p+ diode reduces with increasing temperature while on-state voltage drop increases. © 2011 IEEE.