999 resultados para planar intersect waveguide


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We investigate how to tailor the structural, crystallographic and optical properties of GaAs nanowires. Nanowires were grown by Au nanoparticle-catalyzed metalorganic chemical vapor deposition. A high arsine flow rate, that is, a high ratio of group V to group III precursors, imparts significant advantages. It dramatically reduces planar crystallographic defects and reduces intrinsic carbon dopant incorporation. Increasing V/III ratio further, however, instigates nanowire kinking and increases nanowire tapering. By choosing an intermediate V/III ratio we achieve uniform, vertically aligned GaAs nanowires, free of planar crystallographic defects, with excellent optical properties and high purity. These findings will greatly assist the development of future GaAs nanowire-based electronic and optoelectronic devices, and are expected to be more broadly relevant to the rational synthesis of other III-V nanowires. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.

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Multimode polymer waveguides are promising for use in board-level optical interconnects. In recent years, various on-board optical interconnection architectures have been demonstrated making use of passive routing waveguide components. In particular, 90° bends have played important roles in complex waveguide layouts enabling interconnection between non co-linear points on a board. Due to the dimensions and index step of the waveguides typically used in on-board optical interconnects, low-loss bends are typically limited to a radius of ∼ 10 mm. This paper therefore presents the design and fabrication of compact low-loss waveguide bends with reduced radii of curvature, offering significant reductions in the required areas for on-board optical circuits. The proposed design relies on the exposure of the bend section to the air, achieving tighter light confinement along the bend and reduced bending losses. Simulation studies carried out with ray tracing tools and experimental results from polymer samples fabricated on FR4 are presented. Low bending losses are achieved from the air-exposed bends up to 4 mm of radius of curvature, while an improvement of 14 μm in the 1 dB alignment tolerances at the input of these devices (fibre to waveguide coupling) is also obtained. Finally, the air-exposed bends are employed in an optical bus structure, offering reductions in insertion loss of up to 3.8 dB. © 2013 IEEE.

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Passive modelocking using carbon nanotubes is achieved in a linear cavity waveguide laser realized by ultrafast laser inscription in ytterbium doped bismuthate glass. The pulses observed under a Q-switched envelope have a repetition rate of 1.5 GHz. © 2012 OSA.

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The propagation losses in the fundamental mode of a bicone made of highly reflecting metal or a dielectric of large refraction were approximately estimated using Leontovich's boundary condition. A 400-fold concentration of the energy flux density lias been obtained in a cross section which is much smaller than λ. Here, the losses are 2.5% at λ = 550 nm in an Ag bicone and 12% in a semiconductor bicone with a band gap of ≈1 eV for hv larger than the band gap. The excitation efficiency of a bicone has been estimated. While not too large, it can be increased significantly using the method proposed in the present paper. The application of the optical bicone for the multiplication of a semiconductor-laser frequency is discussed. The results obtained are also of use in scanning near-field optical microscopy and in experiments on focusing laser pulses of ultrahigh power. © 2000 Plenum/Kluwer Publishing Corporation.

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Optical interconnects are increasingly considered for use in high-performance electronic systems. Multimode polymer waveguides are a promising technology for the formation of optical backplanes as they enable cost-effective integration of optical links onto standard printed circuit boards. In this paper, we present a 40 Gb/s optical backplane demonstrator based on the use of polymer multimode waveguides and a regenerative shared bus architecture. The system allows bus extension by cascading multiple polymeric bus modules through 3R regenerator units enabling the connection of an arbitrary number of electrical cards onto the bus. The proof-ofprinciple demonstrator reported here is formed with low-cost, commercially-available active devices and electronic components mounted on conventional FR4 substrates and achieves error-free 4×10 Gb/s optical interconnection between any two card interfaces on the bus. © 2013 IEEE.

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We report passive mode-locking of an Er-doped fiber laser using carbon nanotubes deposited on the facet of a right-angle optical waveguide. © 2013 IEEE.

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We present an evanescent-field device based on a right-angled waveguide. This consists of orthogonal waveguides, with their points of intersection lying along an angled facet of the chip. Light guided along one waveguide is incident at the angled dielectric-air facet at an angle exceeding the critical angle, so that the totally internally reflected light is coupled into the second waveguide. By depositing a nanotube film on the angled surface, the chip is then used to mode-lock an Erbium doped fiber ring laser with a repetition rate of 26 MHz, and pulse duration of 800 fs. © 2013 AIP Publishing LLC.

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Multimode polymer waveguides are an attractive transmission medium for board-level optical links as they provide high bandwidth, relaxed alignment tolerances, and can be directly integrated onto conventional printed circuit boards. However, the performance of multimode waveguide components depends on the launch conditions at the component input, complicating their use in topologies that require the concatenation of multiple multimode components. This paper presents key polymer components for a multichannel optical bus and reports their performance under different launch conditions, enabling useful rules that can be used to design complex interconnection topologies to be derived. The components studied are multimode signal splitters and combiners, 90°-crossings, S-bends, and 90°-bends. By varying the width of the splitter arms, a splitting ratio between 1% and 95% is achieved from the 1 × 2 splitters, while low-loss signal combining is demonstrated with the waveguide combiners. It is shown that a 3 dB improvement in the combiner excess loss can be achieved by increasing the bus width by 50 μm. The worst-case insertion loss of 50 × 100 μm waveguide crossings is measured to be 0.1 dB/crossing. An empirical method is proposed and used to estimate the insertion losses of on-board optical paths of a polymeric four-channel optical bus module. Good agreement is achieved between the predicted and measured values. Although the components and empirical method have been tailored for use in a multichannel optical bus architecture, they can be used for any on-board optical interconnection topology. © 1983-2012 IEEE.

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We experimentally demonstrate an on-chip compact and simple to fabricate silicon Schottky photodetector for telecom wavelengths operating on the basis of internal photoemission process. The device is realized using CMOS compatible approach of local-oxidation of silicon, which enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. The photodetector demonstrates enhanced internal responsivity of 12.5mA/W for operation wavelength of 1.55µm corresponding to an internal quantum efficiency of 1%, about two orders of magnitude higher than our previously demonstrated results [22]. We attribute this improved detection efficiency to the presence of surface roughness at the boundary between the materials forming the Schottky contact. The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.

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We demonstrate the design, fabrication and experimental characterization of a submicron-scale silicon waveguide that is fabricated by local oxidation of silicon. The use of local oxidation process allows defining the waveguide geometry and obtaining smooth sidewalls. The process can be tuned to precisely control the shape and the dimensions of the waveguide. The fabricated waveguides are measured using near field scanning optical microscope at 1550 nm wavelength. These measurements show mode width of 0.4 µm and effective refractive index of 2.54. Finally, we demonstrate the low loss characteristics of our waveguide by imaging the light scattering using an infrared camera.

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We demonstrate a nanoscale mode selector supporting the propagation of the first antisymmetric mode of a silicon waveguide. The mode selector is based on embedding a short section of PhC into the waveguide. On the basis of the difference in k-vector distribution between orthogonal waveguide modes, the PhC can be designed to have a band gap for the fundamental mode, while allowing the transmission of the first antisymmetric mode. The device was tested by directly measuring the modal content before and after the PhC section using a near field scanning optical microscope. Extinction ratio was estimated to be approximately 23 dB. Finally, we provide numerical simulations demonstrating strong coupling of the antisymmetric mode to metallic nanotips. On the basis of the results, we believe that the mode selector may become an important building block in the realization of on chip nanofocusing devices.

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We experimentally demonstrate the planar focusing of Surface Plasmon Polaritons using space variant PMMA subwavelength features on top of a metallic film. Focusing is obtained by creating an effective graded refractive index profile. © 2012 OSA.