983 resultados para fiducial diffraction plane
Resumo:
对单向水流作用下近壁管道横向涡激振动进行了实验模拟,重点探讨了管道与壁面间隙比(e/D)对管道涡激振动幅值和涡激振动频率响应特性的影响规律.实验结果表明,管道与壁面间隙宽度对管道涡激振动特性有较明显影响.在较大间隙比(e/D>0.66)下,管道振幅随着Vr数的增大先快速增长到最大值,然后平缓下降;在振动初期(即Vr数较小时),管道振动频率变化基本符合Strouhal规律;在振动中后期(即Vr数较大时),管道振动频率变化不符合Strouhal规律,而在管道固有频率附近缓慢增长.在较小间隙比(e/D<0.30)下,管道振幅随Vr数的增大先平缓上升到最大值,随后较快速下降;在振动初期,管道振动频率变化不遵循Strouhal规律;在整个振动范围内,与较大间隙比情况相比,随着Vr数增加,管道振动频率增长幅度明显较大.
Resumo:
An Nd:glass laser pulse (18 ns, 1.38 J) is focused in a tiny area of about 100-mum diam under ambient conditions to produce micro-shock waves. The laser is focused above a planar surface with a typical standoff distance of about 4 mm, The laser energy is focused inside a supersonic circular jet of carbon dioxide gas produced by a nozzle with internal diameter of 2.9 mm and external diameter of 8 mm, Nominal value of the Mach number of the jet is around 2 with the corresponding pressure ratio of 7.5 (stagnation pressure/static pressure at the exit of the nozzle), The interaction process of the micro-shock wave generated inside the supersonic jet with the plane wall is investigated using double-pulse holographic interferometry. A strong surface vortex field with subsequent generation of a side jet propagating outward along the plane wail is observed. The interaction of the micro-shock wave with the cellular structure of the supersonic jet does not seem to influence the near surface features of the flowfield. The development of the coherent structures near the nozzle exit due to the upstream propagation of pressure waves seems to be affected by the outward propagating micro-shock wave. Mach reflection is observed when the micro-shock wave interacts with the plane wall at a standoff distance of 4 mm, The Mach stem is slightly deflected, indicating strong boundary-layer and viscous effects near the wall. The interaction process is also simulated numerically using an axisymmetric transient laminar Navier-Stokes solver. Qualitative agreement between experimental and numerical results is good.
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On the basis of the pseudopotential plane-wave method and the local-density-functional theory, this paper studies energetics, stress-strain relation, stability, and ideal strength of beta-SiC under various loading modes, where uniform uniaxial extension and tension and biaxial proportional extension are considered along directions [001] and [111]. The lattice constant, elastic constants, and moduli of equilibrium state are calculated and the results agree well with the experimental data. As the four SI-C bonds along directions [111], [(1) over bar 11], [11(1) over bar] and [111] are not the same under the loading along [111], internal relaxation and the corresponding internal displacements must be considered. We find that, at the beginning of loading, the effect of internal displacement through the shuffle and glide plane diminishes the difference among the four Si-C bonds lengths, but will increase the difference at the subsequent loading, which will result in a crack nucleated on the {111} shuffle plane and a subsequently cleavage fracture. Thus the corresponding theoretical strength is 50.8 GPa, which agrees well with the recent experiment value, 53.4 GPa. However, with the loading along [001], internal relaxation is not important for tetragonal symmetry. Elastic constants during the uniaxial tension along [001] are calculated. Based on the stability analysis with stiffness coefficients, we find that the spinodal and Born instabilities are triggered almost at the same strain, which agrees with the previous molecular-dynamics simulation. During biaxial proportional extension, stress and strength vary proportionally with the biaxial loading ratio at the same longitudinal strain.
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A simple two-dimensional square cavity model is used to study shock attenuating effects of dust suspension in air. The GRP scheme for compressible flows was extended to simulate the fluid dynamics of dilute dust suspensions, employing the conventional two-phase approximation. A planar shock of constant intensity propagated in pure air over Aat ground and diffracted into a square cavity filled with a dusty quiescent suspension. Shock intensities were M-s = 1.30 and M-s = 2.032, dust loading ratios were alpha = 1 and alpha = 5, and particle diameters were d = 1, 10 and 50 mum. It was found that the diffraction patterns in the cavity were decisively attenuated by the dust suspension, particularly for the higher loading ratio. The particle size has a pronounced effect on the flow and wave pattern developed inside the cavity. Wall pressure historics were recorded for each of the three cavity walls, showing a clear attenuating effect of the dust suspension.
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A new X-ray diffraction method for characterising thermal mismatch stress (TMS) in SiCw–Al composite has been developed. The TMS and thermal mismatch strain (TMSN) in SiC whiskers are considered to be axis symmetrical, and can be calculated by measuring the lattice distortion of the whiskers. Not only the average TMS in whiskers and matrix can be obtained, but the TMS components along longitudinal and radial directions in the SiC whiskers can also be deduced. Experimental results indicate that the TMS in SiC whiskers is compressive, and tensile in the aluminium matrix. The TMS and TMSN components along the longitudinal direction in the SiC whiskers are greater than those along the radial direction for a SiCw–Al composite quenched at 500°C.
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In the present paper, it is shown that the zero series eigenfunctions of Reissner plate cracks/notches fracture problems are analogous to the eigenfunctions of anti-plane and in-plane. The singularity in the double series expression of plate problems only arises in zero series parts. In view of the relationship with eigen-values of anti-plane and in-plane problem, the solution of eigen-values for Reissner plates consists of two parts: anti-plane problem and in-plane problem. As a result the corresponding eigen-values or the corresponding eigen-value solving programs with respect to the anti-plane and in-plane problems can be employed and many aggressive SIF computed methods of plane problems can be employed in the plate. Based on those, the approximate relationship of SIFs between the plate and the plane fracture problems is figured out, and the effect relationship of the plate thickness on SIF is given.
Resumo:
In this paper, a new phenomenological theory with strain gradient effects is proposed to account for the size dependence of plastic deformation at micro- and submicro-length scales. The theory fits within the framework of general couple stress theory and three rotational degrees of freedom omega(i) are introduced in addition to the conventional three translational degrees of freedom mu(i). omega(i) is called micro-rotation and is the sum of material rotation plus the particles' relative rotation. While the new theory is used to analyze the crack tip field or the indentation problems, the stretch gradient is considered through a new hardening law. The key features of the theory are that the rotation gradient influences the material character through the interaction between the Cauchy stresses and the couple stresses; the term of stretch gradient is represented as an internal variable to increase the tangent modulus. In fact the present new strain gradient theory is the combination of the strain gradient theory proposed by Chen and Wang (Int. J. Plast., in press) and the hardening law given by Chen and Wang (Acta Mater. 48 (2000a) 3997). In this paper we focus on the finite element method to investigate material fracture for an elastic-power law hardening solid. With remotely imposed classical K fields, the full field solutions are obtained numerically. It is found that the size of the strain gradient dominance zone is characterized by the intrinsic material length l(1). Outside the strain gradient dominance zone, the computed stress field tends to be a classical plasticity field and then K field. The singularity of stresses ahead of the crack tip is higher than that of the classical field and tends to the square root singularity, which has important consequences for crack growth in materials by decohesion at the atomic scale. (C) 2002 Elsevier Science Ltd. All rights reserved.
Resumo:
The scattering of general SH plane wave by an interface crack between two dissimilar viscoelastic bodies is studied and the dynamic stress,intensity factor at the crack-tip is computed. The scattering problem can be decomposed into two problems: one is the reflection and refraction problem of general SH plane waves at perfect interface (with no crack); another is the scattering problem due to the existence of crack. For the first problem, the viscoelastic wave equation, displacement and stress continuity conditions across the interface are used to obtain the shear stress distribution at the interface. For the second problem, the integral transformation method is used to reduce the scattering problem into dual integral equations. Then, the dual integral equations are transformed into the Cauchy singular integral equation of first kind by introduction of the crack dislocation density function. Finally, the singular integral equation is solved by Kurtz's piecewise continuous function method. As a consequence, the crack opening displacement and dynamic stress intensity factor are obtained. At the end of the paper, a numerical example is given. The effects of incident angle, incident frequency and viscoelastic material parameters are analyzed. It is found that there is a frequency region for viscoelastic material within which the viscoelastic effects cannot be ignored.
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The diffraction and reflection of planar shock wave around a dusty square cavity is investigated numerically, which is embedded in the net bottom surface of a two-dimensional channel, and the induced gas-particle two-phase now. The wave patterns at different times are obtained for three different values of the particle diameter. The computational results show that the existence of particles affects appreciably the shock wave diffraction and cavity flow.
Resumo:
An analytical solution to the three-dimensional scattering and diffraction of plane SV-waves by a saturated hemispherical alluvial valley in elastic half-space is obtained by using Fourier-Bessel series expansion technique. The hemispherical alluvial valley with saturated soil deposits is simulated with Biot's dynamic theory for saturated porous media. The following conclusions based on numerical results can be drawn: (1) there are a significant differences in the seismic response simulation between the previous single-phase models and the present two-phase model; (2) the normalized displacements on the free surface of the alluvial valley depend mainly on the incident wave angles, the dimensionless frequency of the incident SV waves and the porosity of sediments; (3) with the increase of the incident angle, the displacement distributions become more complicated; and the displacements on the free surface of the alluvial valley increase as the porosity of sediments increases.
Resumo:
The optical efficiency of GaN-based multiple quantum well (MQW) and light emitting diode (LED) structures grown on Si(111) substrates by metal-organic vapor phase epitaxy was measured and compared with equivalent structures on sapphire. The crystalline quality of the LED structures was comprehensively characterized using x-ray diffraction, atomic force microscopy, and plan-view transmission electron microscopy. A room temperature photoluminescence (PL) internal quantum efficiency (IQE) as high as 58% has been achieved in an InGaN/GaN MQW on Si, emitting at 460 nm. This is the highest reported PL-IQE of a c-plane GaN-based MQW on Si, and the radiative efficiency of this sample compares well with similar structures grown on sapphire. Processed LED devices on Si also show good electroluminescence (EL) performance, including a forward bias voltage of ∼3.5 V at 20 mA and a light output power of 1 mW at 45 mA from a 500 ×500 μm2 planar device without the use of any additional techniques to enhance the output coupling. The extraction efficiency of the LED devices was calculated, and the EL-IQE was then estimated to have a maximum value of 33% at a current density of 4 A cm-2, dropping to 30% at a current density of 40 A cm-2 for a planar LED device on Si emitting at 455 nm. The EL-IQE was clearly observed to increase as the structural quality of the material increased for devices on both sapphire and Si substrates. © 2011 American Institute of Physics.