Interplay between partial incoherence, partial inelasticity, resonance, and heterogeneity in long-range electron transfer and transport

A generalized scattering matrix formalism is constructed to elucidate the interplay of electron resonance, coherence, dephasing, inelastic scattering, and heterogeneity, which play important roles in the physics of long-range electron transfer/transport. The theory consists of an extension of the standard Buttiker phase-breaking model and an analytical expression of the electron transmission coefficient for donor-bridge-acceptor systems with arbitrary length and sequence. The theory incorporates the following features: Dephasing-assisted off-resonance enhancement, inelasticity-induced turnover, resonance enhancement and its dephasing-induced suppression, dephasing-induced smooth superexchange-hopping transition, and heterogeneity effects. (C) 2002 American Institute of Physics.

Electrical transport through individual DNA molecules

A theoretical model is presented to describe electrical transport through individual DNA molecules. By contacting the proposed model with the experimentally measured data, a variety of valuable quantities are identified. The partially decoherent nature on the guanine-cytosine (GC) pairs of DNA is also elaborated in contrast to the completely incoherent hopping mechanism discussed in the context of charge transfer experiments. (C) 2001 American Institute of Physics.

Carrier transport properties of the (n)nc-Si : H/(p)c-Si heterojunction

Phosphor-doped nano-crystalline silicon ((n))nc-Si:H) films are successfully grown on the p-type (100) oriented crystal silicon ((p) c-Si) substrate by conventional plasma-enhanced chemical vapor deposition method. The films are obtained using high H-2 diluted SiH4 as a reaction gas source and using PH3 as the doping gas source of phosphor atoms. Futhermore, the heterojunction diodes are also fabricated by using (n)nc-Si:H films and (p)c-Si substrate. I-V properties are investigated in the temperature range of 230-420K. The experimental results domenstrate that (n)nc-Si:H/(p) c-Si heterojunction is a typical abrupt heterojunction having good rectifing and temperature properties. Carrier transport mechanisms are tunneling - recombination model at forward bias voltages. In the range of low bias voltages ( V-F< 0.8 V), the current is determined by recombination at the (n)nc-Si:H side of the space charge region, while the current becomes tunneing at higher bias voltages( V-F>1.0 V). The present heterojunction has high reverse breakdown voltage ( > - 75 V) and low reverse current (approximate to nA).

Photoexcited charge current for the presence of pure spin current

The asymmetric spin distribution in k space caused by the pure spin current (PSC) can introduce a photoexcited charge current (PECC). This provides us a practical scheme for direct detection of PSC. We demonstrate theoretically that the PECC related to the PSC depends sensitively on the wave vector and spin orientation of the carriers, more important, the helicity dependence of this PECC provides us a way to refine it from the helicity independent background current by tuning the polarized laser beams from left to right circular polarization.

Electrical Transport Properties of Annealed Undoped InP

The electrical properties of annealed undoped n-type InP are studied by temperature dependent Hall effect (TDH) and current-voltage (I-V) measurements for semiconducting and semi-insulating samples, receptively. Defect band conduction in annealed semiconducting InP can be observed from TDH measurement, which is similar to those of as-grown unintentionally doped InP with low carrier concentration and moderate compensation. The I-V curves of annealed undoped SI InP exhibit ohmic property in the applied field region up to the onset of breakdown. Such a result is different from that of as-grown Fe-doped SI InP which has a nonlinear region in I-V curve explained by the theory of space charge limited current.

Effect of dye-doped concentration on the charge carrier recombination in molecularly doped organic light-emitting devices

The effect of the concentration of 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl- 9-enyl)-4H-pyran(DCJTB) as dopant in tris(8-hydroxyquinoline) aluminium (Alq(3)) on the charge carrier recombination was studied by transient electroluminescence (EL). The electron-hole recombination coefficient (gamma) was determined from the long-time component of the temporal decay of the EL intensity after a rectangular voltage pulse was turned off. It was found that the coefficient monotonically decreased with an increase in the DCJTB-doping concentration. The monotonic decrease is attributed to concentration quenching on the excitons and coincided well with the reduction of the EL efficiency.

Charge carrier mobility and electroluminescence in a green-emitting alternating block copolymer with a methoxy Bi-substituted chromophore

We determine the mobility of positive and negative charge carriers in a soluble green-emitting alternating block copolymer with, a methoxy bi-subsbituted conjugated segment. The negative charge carrier mobility of 6 x 10(-11) cm(2)/V.s is directly determined using space-charge-limited current analytical expressions. Positive charge carrier transport is also space-charge-limited, with a mobility of I x 10(-8) cm(2)/V.s. The electron trap distribution is exponential, with a characteristic energy of similar to 0.12 eV. A hole trap with energy similar to 0.4 eV was observed. This copolymer is used as emissive material in organic light-emitting diodes that present brightness of similar to 900 cd/m(2) at 12.5 V.

Effect on the property of the photoinduced carrier transport of CdS as sensitizer for TiO2 nanoparticulate thin films

The TiO2 nanoparticle thin films have been sensitized in situ with CdS nanoparticles. The SPS measurement showed that large surface state density was present on the TiO2 nanoparticles and the surface state can be efficiently decreased by sensitization as well as selecting suitable heat treatment, Both the photocurrent response and the charge recombination kinetics in TiO2 thin films were strongly influenced by trapping/detrapping of surface states. The slow photocurrent response of TiO2 nanoparticulate thin films upon the illumination was attributed to the trap saturation effects, The semiconductor sensitization made the slow photoresponse disappeared and the steady-state photocurrent value increased drastically, which suggested that the sensitization of TiO2 thin films with CdS could get a better charge separation and provide a simple alternative to minimize the effect of surface state on the photocurrent response.

Determination of electron mobility in a blue-emitting alternating block copolymer by space-charge-limited current measurements

In this communication we analyse current versus voltage data obtained using one carrier injection at metal/polymer/metal structures, The used polymer is a soluble blue-emitting alternating block copolymer, Our experimental results demonstrate that the electron current is limited by a large amount of traps with exponential energy distribution in the copolymer. The electron ;mobility of 5.1 x 10(-10) cm(2)/V s is directly determined by space-charge-limited current measurements. The electron mobility is at least three orders of magnitude smaller than that for holes in the copolymer. (C) 1999 Elsevier Science Ltd. All rights reserved.

Investigation of numerical atomic orbitals for first-principles calculations of the electronic and transport properties of silicon nanowire structures

This thesis is focused on the application of numerical atomic basis sets in studies of the structural, electronic and transport properties of silicon nanowire structures from first-principles within the framework of Density Functional Theory. First we critically examine the applied methodology and then offer predictions regarding the transport properties and realisation of silicon nanowire devices. The performance of numerical atomic orbitals is benchmarked against calculations performed with plane waves basis sets. After establishing the convergence of total energy and electronic structure calculations with increasing basis size we have shown that their quality greatly improves with the optimisation of the contraction for a fixed basis size. The double zeta polarised basis offers a reasonable approximation to study structural and electronic properties and transferability exists between various nanowire structures. This is most important to reduce the computational cost. The impact of basis sets on transport properties in silicon nanowires with oxygen and dopant impurities have also been studied. It is found that whilst transmission features quantitatively converge with increasing contraction there is a weaker dependence on basis set for the mean free path; the double zeta polarised basis offers a good compromise whereas the single zeta basis set yields qualitatively reasonable results. Studying the transport properties of nanowire-based transistor setups with p+-n-p+ and p+-i-p+ doping profiles it is shown that charge self-consistency affects the I-V characteristics more significantly than the basis set choice. It is predicted that such ultrascaled (3 nm length) transistors would show degraded performance due to relatively high source-drain tunnelling currents. Finally, it is shown the hole mobility of Si nanowires nominally doped with boron decreases monotonically with decreasing width at fixed doping density and increasing dopant concentration. Significant mobility variations are identified which can explain experimental observations.

Modulating unimolecular charge transfer by exciting bridge vibrations.

Ultrafast UV-vibrational spectroscopy was used to investigate how vibrational excitation of the bridge changes photoinduced electron transfer between donor (dimethylaniline) and acceptor (anthracene) moieties bridged by a guanosine-cytidine base pair (GC). The charge-separated (CS) state yield is found to be lowered by high-frequency bridge mode excitation. The effect is linked to a dynamic modulation of the donor-acceptor coupling interaction by weakening of H-bonding and/or by disruption of the bridging base-pair planarity.

NO3- transport across the plasma membrane of Arabidopsis thaliana root hairs:Kinetic control by pH and membrane voltage

High-affinity nitrate transport was examined in intact root hair cells of Arabidopsis thaliana using electrophysiological recordings to characterise the response of the plasma membrane to NO₃^-challenge and to quantify transport activity. The NO₃^--associated membrane current was determined using a three-electrode voltage clamp to bring membrane voltage under experimental control and to compensate for current dissipation along the longitudinal cell axis. Nitrate transport was evident in the roots of seedlings grown in the absence of a nitrogen source, but only 4-6 days postgermination. In 6-day-old seedlings, additions of 5-100 μm NO₃^-to the bathing medium resulted in membrane depolarizations of 8-43 mV, and membrane voltage (V_m) recovered on washing NO₃^-from the bath. Voltage clamp measurements carried out immediately before and following NO₃^-additions showed that the NO₃^--evoked depolarizations were the consequence of an inward-directed current that appeared across the entire range of accessible voltages (-300 to +50 mV). Both membrane depolarizations and NO₃^--evoked currents recorded at the free-running voltage displayed quasi-Michaelian kinetics, with apparent values for K_m of 23 ± 6 and 44 ± 11 μm, respectively and, for the current, a maximum of 5.1 ± 0.9 μA cm^-2. The NO₃^-current showed a pronounced voltage sensitivity within the normal physiological range between -250 and -100 mV, as could be demonstrated under voltage clamp, and increasing the bathing pH from 6.1 to 7.4-8.0 reduced the current and the associated membrane depolarizations 3- to 8-fold. Analyses showed a well-defined interaction between the kinetic variables of membrane voltage, pH_o and [NO₃^-]_o. At a constant pH_o of 6.1, depolarization from -250 to -150 mV resulted in an approximate 3-fold reduction in the maximum current but a 10% rise in the apparent affinity for NO₃^-. By contrast, the same depolarization effected an approximate 20% fall in the K_m for transport as a function in [H⁺]_o. These, and additional characteristics of the transport current implicate a carrier cycle in which NO₃^-binding is kinetically isolated from the rate-limiting step of membrane charge transit, and they indicate a charge-coupling stoichiometry of 2(H⁺) per NO₃^-anion transported across the membrane. The results concur with previous studies showing a high-affinity NO₃^-transport system in Arabidopsis that is inducible following a period of nitrogen-limiting growth, but they underline the importance of voltage as a kinetic factor controlling NO₃^-transport at the plant plasma membrane. © 1995 Springer-Verlag New York Inc.

Paving the way to nanoionics: atomic origin of barriers for ionic transport through interfaces

The blocking of ion transport at interfaces strongly limits the performance of electrochemical nanodevices for energy applications. The barrier is believed to arise from space-charge regions generated by mobile ions by analogy to semiconductor junctions. Here we show that something different is at play by studying ion transport in a bicrystal of yttria (9% mol) stabilized zirconia (YSZ), an emblematic oxide ion conductor. Aberration-corrected scanning transmission electron microscopy (STEM) provides structure and composition at atomic resolution, with the sensitivity to directly reveal the oxygen ion profile. We find that Y segregates to the grain boundary at Zr sites, together with a depletion of oxygen that is confined to a small length scale of around 0.5 nm. Contrary to the main thesis of the space-charge model, there exists no evidence of a long-range O vacancy depletion layer. Combining ion transport measurements across a single grain boundary by nanoscale electrochemical strain microscopy (ESM), broadband dielectric spectroscopy measurements, and density functional calculations, we show that grain-boundary-induced electronic states act as acceptors, resulting in a negatively charged core. Ultimately, it is this negative charge which gives rise to the barrier for ion transport at the grain boundary

Sustainable freight: impacts of the London congestion charge and low emissions zone

This paper assesses whether two sustainability policies currently in effect in London, a congestion charge zone and a low emission zone, have affected freight operations and reduced vehicle kilometers travelled. It investigates responses by freight operators, including re-timing, re-routing, or reducing the number of trips, or replacing vehicles. Freight traffic trends from 1994 to 2012 were identified using road traffic estimates, cordon counts, and vehicle speed data and supplemented by interviews with freight industry experts and operators. Findings indicate that freight traffic increased throughout London during this timeframe, but declined in the central boroughs partly within the congestion charge zone. The congestion charge may have time-shifted some light goods trips, but most freight trips face a variety of constraints on operators’ delivery window. No evidence was found of re-routing of freight traffic or avoidance traffic around the charged zone. The low emission zone spurred higher levels of operational change than the congestion charge zone, and it was effective at spurring freight vehicle replacement. The paper also discusses freight operators’ perceptions of these policies and how they could be improved.

Implémentation de la répartition de charge et du mode TOT pour la simulation d’un détecteur Timepix à pixels

Les détecteurs à pixels Medipix ont été développés par la collaboration Medipix et permettent de faire de l'imagerie en temps réel. Leur surface active de près de $2\cm^2$ est divisée en 65536~pixels de $55\times 55\um^2$ chacun. Seize de ces détecteurs, les Medipix2, sont installés dans l'expérience ATLAS au CERN afin de mesurer en temps réel les champs de radiation produits par les collisions de hadrons au LHC. Ils seront prochainement remplacés par des Timepix, la plus récente version de ces détecteurs, qui permettent de mesurer directement l'énergie déposée dans chaque pixel en mode \textit{time-over-threshold} (TOT) lors du passage d'une particule dans le semi-conducteur. En vue d'améliorer l'analyse des données recueillies avec ces détecteurs Timepix dans ATLAS, un projet de simulation Geant4 a été amorcé par John Id\'{a}rraga à l'Université de Montréal. Dans le cadre de l'expérience ATLAS, cette simulation pourra être utilisée conjointement avec Athena, le programme d'analyse d'ATLAS, et la simulation complète du détecteur ATLAS. Sous l'effet de leur propre répulsion, les porteurs de charge créés dans le semi-conducteur sont diffusés vers les pixels adjacents causant un dépôt d'énergie dans plusieurs pixels sous l'effet du partage de charges. Un modèle effectif de cette diffusion latérale a été développé pour reproduire ce phénomène sans résoudre d'équation différentielle de transport de charge. Ce modèle, ainsi que le mode TOT du Timepix, qui permet de mesurer l'énergie déposée dans le détecteur, ont été inclus dans la simulation afin de reproduire adéquatement les traces laissées par les particules dans le semi-conducteur. On a d'abord étalonné le détecteur pixel par pixel à l'aide d'une source de $\Am$ et de $\Ba$. Ensuite, on a validé la simulation à l'aide de mesures d'interactions de protons et de particules $\alpha$ produits au générateur Tandem van de Graaff du Laboratoire René-J.-A.-Lévesque de l'Université de Montréal.