402 resultados para WAFER


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Abstract (deutsch)Zielsetzung des Dissertationsvorhabens war die Beobachtung und Analyse von Gast-Wirt-Wechselwirkungen an oxidischen Oberflächen. Einer der Wechselwirkungspartner sollte dabei auf der Oberfläche immobilisiert, der andere in wäßriger Lösung darüber vorliegen.Eine empfindliche und oberflächensensitive Methode zur Beobachtung der Anlagerung unmarkierter Moleküle ist die Wellenleiterspektroskopie, insbesondere mit dem hier verwendeten und weiterentwickelten integriert-optischen Mach-Zehnder-Interferometer in Siliziumtechnik (Siliziumoxynitrid auf oxidiertem Siliziumwafer). Mit Hilfe des Interferometers wurden unterschiedliche Wirt-Gast-Systeme untersucht. Grundlage der Immobilisierung war jeweils die Funktionalisierung der Sensoroberfläche durch Selbstadsorption von Organosilanen. Durch unterschiedliche Organosilane, die zum Teil im Rahmen dieser Arbeit synthetisiert wurden, ließen sich die Wirtmoleküle beta-Cyclodextrin, Streptavidin, sowie unterschiedliche monoklonale Antikörperfragmente immobilisieren.- Der Einfluß der Oberfläche auf die Bindungsstärke des Wirtmoleküls beta-Cyclodextrin und unterschiedlicher Gastmoleküle wurde konzentrationsabhängig untersucht.- Silan-Biotinderivate mit unterschiedlicher Streptavidin-Affinität wurden an die Oberfläche immobilisiert und die Adsorption von Streptavidin an die Biotinderivate beobachtet. Dabei konnte unter anderem nachgewiesen werden, daß das Streptavidinadsorbat gequollen ist.- Als mögliche Anwendung wurde geprüft, ob das vorgestellte Interferometer durch die Funktionalisierung mit Antikörperfragmenten als Biosensor in Frage kommt. Es konnte nachgewiesen werden, daß sich Antikörper auf der Sensoroberfläche immobilisieren lassen und Antigene spezifisch an diese Antikörper adsorbieren.

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The aim of this thesis was to investigate novel techniques to create complex hierarchical chemical patterns on silica surfaces with micro to nanometer sized features. These surfaces were used for a site-selective assembly of colloidal particles and oligonucleotides. To do so, functionalised alkoxysilanes (commercial and synthesised ones) were deposited onto planar silica surfaces. The functional groups can form reversible attractive interactions with the complementary surface layers of the opposing objects that need to be assembled. These interactions determine the final location and density of the objects onto the surface. Photolithographically patterned silica surfaces were modified with commercial silanes, in order to create hydrophilic and hydrophobic regions on the surface. Assembly of hydrophobic silica particles onto these surfaces was investigated and finally, pH and charge effects on the colloidal assembly were analysed. In the second part of this thesis the concept of novel, "smart" alkoxysilanes is introduced that allows parallel surface activation and patterning in a one-step irradiation process. These novel species bear a photoreactive head-group in a protected form. Surface layers made from these molecules can be irradiated through a mask to remove the protecting group from selected regions and thus generate lateral chemical patterns of active and inert regions on the substrate. The synthesis of an azide-reactive alkoxysilane was successfully accomplished. Silanisation conditions were carefully optimised as to guarantee a smooth surface layer, without formation of micellar clusters. NMR and DLS experiments corroborated the absence of clusters when using neither water nor NaOH as catalysts during hydrolysis, but only the organic solvent itself. Upon irradiation of the azide layer, the resulting nitrene may undergo a variety of reactions depending on the irradiation conditions. Contact angle measurements demonstrated that the irradiated surfaces were more hydrophilic than the non-irradiated azide layer and therefore the formation of an amine upon irradiation was postulated. Successful photoactivation could be demonstrated using condensation patterns, which showed a change in wettability on the wafer surface upon irradiation. Colloidal deposition with COOH functionalised particles further underlined the formation of more hydrophilic species. Orthogonal photoreactive silanes are described in the third part of this thesis. The advantage of orthogonal photosensitive silanes is the possibility of having a coexistence of chemical functionalities homogeneously distributed in the same layer, by using appropriate protecting groups. For this purpose, a 3',5'-dimethoxybenzoin protected carboxylic acid silane was successfully synthesised and the kinetics of its hydrolysis and condensation in solution were analysed in order to optimise the silanisation conditions. This compound was used together with a nitroveratryl protected amino silane to obtain bicomponent surface layers. The optimum conditions for an orthogonal deprotection of surfaces modified with this two groups were determined. A 2-step deprotection process through a mask generated a complex pattern on the substrate by activating two different chemistries at different sites. This was demonstrated by colloidal adsorption and fluorescence labelling of the resulting substrates. Moreover, two different single stranded oligodeoxynucleotides were immobilised onto the two different activated areas and then hybrid captured with their respective complementary, fluorescent labelled strand. Selective hybridisation could be shown, although non-selective adsorption issues need to be resolved, making this technique attractive for possible DNA microarrays.

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Das Ziel dieser Arbeit ist die Synthese von Polymerbürsten auf Silizium durch Aufbringen der Reaktionslösung mit einem Pipettiersystem. Dies ist für die Beschichtung von Microcantilever Sensoren interessant, um spezifische Fühler mit funktionellen Polymerschichten, die auf chemische oder physikalische Einflüsse reagieren, zu bauen. Bisherige Synthesemethoden werden in Lösung durchgeführt. Atom Transfer Radical Polymerization ist etabliert, um definierte Schichten von Polymerbürsten herzustellen. Die Kombination mit einer “Spot Printing”-Technik kann eine Alternative sein, um einzelne Cantilever mit einer Breite von 90 μm und einer Länge von 750 μm zu beschichten. Dafür wurde eine Chemie getestet, die mit dem Pipettiersystem Nano-Plotter der Firma Gesim umsetzbar ist. Aus einer Mischung aus Wasser und DMF wurden Poly(N-Isopropylacrylamid)-Bürsten auf Silizium mit Schichtdicken bis zu 40 nm hergestellt. Es war nötig den Nano-Plotter anzupassen, damit zum einen auf die Microcantilever Sensoren pipettiert werden kann und zum andern die Nanoliter großen Tropfen über den Reaktionszeitraum stabil sind. Auf diese Weise konnten Linien mit einer Schichtdicke von ca. 2 nm auf Siliziumwafer hergestellt werden. Die “Spot-Printing” Methode ist daher eine gute Ergänzung zur herkömmlichen Synthese.

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In this present work high quality PMMA opals with different sphere sizes, silica opals from large size spheres, multilayer opals, and inverse opals were fabricated. Highly monodisperse PMMA spheres were synthesized by surfactant-free emulsion polymerization (polydispersity ~2%). Large-area and well-ordered PMMA crystalline films with a homogenous thickness were produced by the vertical deposition method using a drawing device. Optical experiments have confirmed the high quality of these PMMA photonic crystals, e.g., well resolved high-energy bands of the transmission and reflectance spectra of the opaline films were observed. For fabrication of high quality opaline photonic crystals from large silica spheres (diameter of 890 nm), self-assembled in patterned Si-substrates a novel technique has been developed, in which the crystallization was performed by using a drawing apparatus in combination with stirring. The achievements comprise a spatial selectivity of opal crystallization without special treatment of the wafer surface, the opal lattice was found to match the pattern precisely in width as well as depth, particularly an absence of cracks within the size of the trenches, and finally a good three-dimensional order of the opal lattice even in trenches with a complex confined geometry. Multilayer opals from opaline films with different sphere sizes or different materials were produced by sequential crystallization procedure. Studies of the transmission in triple-layer hetero-opal revealed that its optical properties cannot only be considered as the linear superposition of two independent photonic bandgaps. The remarkable interface effect is the narrowing of the transmission minima. Large-area, high-quality, and robust photonic opal replicas from silicate-based inorganic-organic hybrid polymers (ORMOCER® s) were prepared by using the template-directed method, in which a high quality PMMA opal template was infiltrated with a neat inorganic-organic ORMOCER® oligomer, which can be photopolymerized within the opaline voids leading to a fully-developed replica structure with a filling factor of nearly 100%. This opal replica is structurally homogeneous, thermally and mechanically stable and the large scale (cm2 size) replica films can be handled easily as free films with a pair of tweezers.

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The work of the present thesis is focused on the implementation of microelectronic voltage sensing devices, with the purpose of transmitting and extracting analog information between devices of different nature at short distances or upon contact. Initally, chip-to-chip communication has been studied, and circuitry for 3D capacitive coupling has been implemented. Such circuits allow the communication between dies fabricated in different technologies. Due to their novelty, they are not standardized and currently not supported by standard CAD tools. In order to overcome such burden, a novel approach for the characterization of such communicating links has been proposed. This results in shorter design times and increased accuracy. Communication between an integrated circuit (IC) and a probe card has been extensively studied as well. Today wafer probing is a costly test procedure with many drawbacks, which could be overcome by a different communication approach such as capacitive coupling. For this reason wireless wafer probing has been investigated as an alternative approach to standard on-contact wafer probing. Interfaces between integrated circuits and biological systems have also been investigated. Active electrodes for simultaneous electroencephalography (EEG) and electrical impedance tomography (EIT) have been implemented for the first time in a 0.35 um process. Number of wires has been minimized by sharing the analog outputs and supply on a single wire, thus implementing electrodes that require only 4 wires for their operation. Minimization of wires reduces the cable weight and thus limits the patient's discomfort. The physical channel for communication between an IC and a biological medium is represented by the electrode itself. As this is a very crucial point for biopotential acquisitions, large efforts have been carried in order to investigate the different electrode technologies and geometries and an electromagnetic model is presented in order to characterize the properties of the electrode to skin interface.

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The goal of this thesis is the application of an opto-electronic numerical simulation to heterojunction silicon solar cells featuring an all back contact architecture (Interdigitated Back Contact Hetero-Junction IBC-HJ). The studied structure exhibits both metal contacts, emitter and base, at the back surface of the cell with the objective to reduce the optical losses due to the shadowing by front contact of conventional photovoltaic devices. Overall, IBC-HJ are promising low-cost alternatives to monocrystalline wafer-based solar cells featuring front and back contact schemes, in fact, for IBC-HJ the high concentration doping diffusions are replaced by low-temperature deposition processes of thin amorphous silicon layers. Furthermore, another advantage of IBC solar cells with reference to conventional architectures is the possibility to enable a low-cost assembling of photovoltaic modules, being all contacts on the same side. A preliminary extensive literature survey has been helpful to highlight the specific critical aspects of IBC-HJ solar cells as well as the state-of-the-art of their modeling, processing and performance of practical devices. In order to perform the analysis of IBC-HJ devices, a two-dimensional (2-D) numerical simulation flow has been set up. A commercial device simulator based on finite-difference method to solve numerically the whole set of equations governing the electrical transport in semiconductor materials (Sentuarus Device by Synopsys) has been adopted. The first activity carried out during this work has been the definition of a 2-D geometry corresponding to the simulation domain and the specification of the electrical and optical properties of materials. In order to calculate the main figures of merit of the investigated solar cells, the spatially resolved photon absorption rate map has been calculated by means of an optical simulator. Optical simulations have been performed by using two different methods depending upon the geometrical features of the front interface of the solar cell: the transfer matrix method (TMM) and the raytracing (RT). The first method allows to model light prop-agation by plane waves within one-dimensional spatial domains under the assumption of devices exhibiting stacks of parallel layers with planar interfaces. In addition, TMM is suitable for the simulation of thin multi-layer anti reflection coating layers for the reduction of the amount of reflected light at the front interface. Raytracing is required for three-dimensional optical simulations of upright pyramidal textured surfaces which are widely adopted to significantly reduce the reflection at the front surface. The optical generation profiles are interpolated onto the electrical grid adopted by the device simulator which solves the carriers transport equations coupled with Poisson and continuity equations in a self-consistent way. The main figures of merit are calculated by means of a postprocessing of the output data from device simulation. After the validation of the simulation methodology by means of comparison of the simulation result with literature data, the ultimate efficiency of the IBC-HJ architecture has been calculated. By accounting for all optical losses, IBC-HJ solar cells result in a theoretical maximum efficiency above 23.5% (without texturing at front interface) higher than that of both standard homojunction crystalline silicon (Homogeneous Emitter HE) and front contact heterojuction (Heterojunction with Intrinsic Thin layer HIT) solar cells. However it is clear that the criticalities of this structure are mainly due to the defects density and to the poor carriers transport mobility in the amorphous silicon layers. Lastly, the influence of the most critical geometrical and physical parameters on the main figures of merit have been investigated by applying the numerical simulation tool set-up during the first part of the present thesis. Simulations have highlighted that carrier mobility and defects level in amorphous silicon may lead to a potentially significant reduction of the conversion efficiency.

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Im Rahmen dieser Arbeit wurde ein neuer Eiskeimzähler FINCH (Fast Ice Nucleus CHamber) entwickelt und erste Messungen von verschiedenen Testaerosolen im Labor und atmosphärischem Aerosol durchgeführt. Die Aerosolpartikel bzw. Ice Nuclei IN werden bei Temperaturen unter dem Gefrierpunkt und Übersättigungen in Bezug auf Eis zum Anwachsen zu Eiskristallen gebracht, um sie mittels optischer Detektion zu erfassen. In FINCH ist dies durch das Prinzip der Mischung realisiert, wodurch eine kontinuierliche Messung der IN-Anzahlkonzentration gewährleistet ist. Hierbei kann mit sehr hohen Sammelflussraten von bis zu 10 l/min gemessen werden. Ebenso ist ein schnelles Abfahren von verschiedenen Sättigungsverhältnissen in Bezug auf Eis in einem weiten Bereich von 0.9 - 1.7 bei konstanten Temperaturen bis zu −23 °C möglich. Die Detektion der Eiskristalle und damit der Bestimmung der IN-Anzahlkonzentration erfolgt über einen neu entwickelten optischen Sensor basierend auf der unterschiedlichen Depolarisation des zurückgestreuten Lichtes von Eiskristallen und unterkühlten Tropfen. In Labermessungen wurden Aktivierungstemperatur und -sättigungsverhältnis von Silberjodid AgI und Kaolinit vermessen. Die Resultate zeigten gute Übereinstimmungen mit Ergebnissen aus der Literatur sowie Parallelmessungen mit FRIDGE (FRankfurt Ice Deposition freezinG Experiment). FRIDGE ist eine statische Diffusionskammer zur Aktivierung und Auszählung von Eiskeimen, die auf einem Filter gesammelt wurden. Bei atmosphärischen Messungen auf dem Jungfraujoch(Schweiz) lagen die IN-Anzahlkonzentrationen mit bis zu 4 l−1 im Rahmen der aus der Literatur bekannten Werte. Messungen der Eiskristallresiduen von Mischwolken zeigten hingegen, dass nur jedes tausendste als Eiskeim im Depositionsmode aktiv ist. Hier scheinen andere Gefrierprozesse und sekundäre Eiskristallbildung von sehr großer Bedeutung für die Anzahlkonzentration der Eiskristallresiduen zu sein. Eine weitere Messung von atmosphärischem Aerosol in Frankfurt zeigte IN-Anzahlkonzentrationen bis zu 30 l−1 bei Aktivierungstemperaturen um −14 °C. Die parallele Probenahme auf Siliziumplättchen für die Messungen der IN-Anzahlkonzentration in FRIDGE ergaben Werte im gleichen Anzahlkonzentrationsbereich.

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In questa tesi viene descritto il funzionamento delle sorgenti di luce LED (Light Emitting Diode) a confinamento quantico, che rappresentano la nuova frontiera dell'illuminazione ad alta efficienza e durata. Nei capitoli introduttivi è descritta brevemente la storia dei LEDs dalla loro invenzione agli sviluppi più recenti. Il funzionamento di tali dispositivi fotonici è spiegato a partire dal concetto di sorgente di luce per elettroluminescenza, con particolare riferimento alle eterostrutture a confinamento quantico bidimensionale (quantum wells). I capitoli centrali riguardano i nitruri dei gruppi III-V, le cui caratteristiche e proprietà hanno permesso di fabbricare LEDs ad alta efficienza e ampio spettro di emissione, soprattutto in relazione al fatto che i LEDs a nitruri dei gruppi III-V emettono luce anche in presenza di alte densità di difetti estesi, nello specifico dislocazioni. I capitoli successivi sono dedicati alla presentazione del lavoro sperimentale svolto, che riguarda la caratterizzazione elettrica, ottica e strutturale di LEDs a confinamento quantico basati su nitruri del gruppo III-V GaN e InGaN, cresciuti nei laboratori di Cambridge dal Center for Gallium Nitride. Lo studio ha come obiettivo finale il confronto dei risultati ottenuti su LEDs con la medesima struttura epitassiale, ma differente densità di dislocazioni, allo scopo di comprendere meglio il ruolo che tali difetti estesi ricoprono nella determinazione dell'effcienza delle sorgenti di luce LED. L’ultimo capitolo riguarda la diffrazione a raggi X dal punto di vista teorico, con particolare attenzione ai metodi di valutazioni dello strain reticolare nei wafer a nitruri, dal quale dipende la densità di dislocazioni.

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Nel presente lavoro di tesi magistrale sono stati depositati e caratterizzati film sottili (circa 10 nm) di silicio amorfo idrogenato (a-Si:H), studiando in particolare leghe a basso contenuto di ossigeno e carbonio. Tali layer andranno ad essere implementati come strati di passivazione per wafer di Si monocristallino in celle solari ad eterogiunzione HIT (heterojunctions with intrinsic thin layer), con le quali recentemente è stato raggiunto il record di efficienza pari a 24.7% . La deposizione è avvenuta mediante PECVD (plasma enhanced chemical vapour deposition). Tecniche di spettroscopia ottica, come FT-IR (Fourier transform infrared spectroscopy) e SE (spettroscopic ellipsometry) sono state utilizzate per analizzare le configurazioni di legami eteronucleari (Si-H, Si-O, Si-C) e le proprietà strutturali dei film sottili: un nuovo metodo è stato implementato per calcolare i contenuti atomici di H, O e C da misure ottiche. In tal modo è stato possibile osservare come una bassa incorporazione (< 10%) di ossigeno e carbonio sia sufficiente ad aumentare la porosità ed il grado di disordine a lungo raggio del materiale: relativamente a quest’ultimo aspetto, è stata sviluppata una nuova tecnica per determinare dagli spettri ellisometrici l’energia di Urbach, che esprime la coda esponenziale interna al gap in semiconduttori amorfi e fornisce una stima degli stati elettronici in presenza di disordine reticolare. Nella seconda parte della tesi sono stati sviluppati esperimenti di annealing isocrono, in modo da studiare i processi di cristallizzazione e di effusione dell’idrogeno, correlandoli con la degradazione delle proprietà optoelettroniche. L’analisi dei differenti risultati ottenuti studiando queste particolari leghe (a-SiOx e a-SiCy) ha permesso di concludere che solo con una bassa percentuale di ossigeno o carbonio, i.e. < 3.5 %, è possibile migliorare la risposta termica dello specifico layer, ritardando i fenomeni di degradazione di circa 50°C.

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Key technology applications like magnetoresistive sensors or the Magnetic Random Access Memory (MRAM) require reproducible magnetic switching mechanisms. i.e. predefined remanent states. At the same time advanced magnetic recording schemes push the magnetic switching time into the gyromagnetic regime. According to the Landau-Lifschitz-Gilbert formalism, relevant questions herein are associated with magnetic excitations (eigenmodes) and damping processes in confined magnetic thin film structures.rnObjects of study in this thesis are antiparallel pinned synthetic spin valves as they are extensively used as read heads in today’s magnetic storage devices. In such devices a ferromagnetic layer of high coercivity is stabilized via an exchange bias field by an antiferromagnet. A second hard magnetic layer, separated by a non-magnetic spacer of defined thickness, aligns antiparallel to the first. The orientation of the magnetization vector in the third ferromagnetic NiFe layer of low coercivity - the freelayer - is then sensed by the Giant MagnetoResistance (GMR) effect. This thesis reports results of element specific Time Resolved Photo-Emission Electron Microscopy (TR-PEEM) to image the magnetization dynamics of the free layer alone via X-ray Circular Dichroism (XMCD) at the Ni-L3 X-ray absorption edge.rnThe ferromagnetic systems, i.e. micron-sized spin valve stacks of typically deltaR/R = 15% and Permalloy single layers, were deposited onto the pulse leading centre stripe of coplanar wave guides, built in thin film wafer technology. The ferromagnetic platelets have been applied with varying geometry (rectangles, ellipses and squares), lateral dimension (in the range of several micrometers) and orientation to the magnetic field pulse to study the magnetization behaviour in dependence of these magnitudes. The observation of magnetic switching processes in the gigahertz range became only possible due to the joined effort of producing ultra-short X-ray pulses at the synchrotron source BESSY II (operated in the so-called low-alpha mode) and optimizing the wave guide design of the samples for high frequency electromagnetic excitation (FWHM typically several 100 ps). Space and time resolution of the experiment could be reduced to d = 100 nm and deltat = 15 ps, respectively.rnIn conclusion, it could be shown that the magnetization dynamics of the free layer of a synthetic GMR spin valve stack deviates significantly from a simple phase coherent rotation. In fact, the dynamic response of the free layer is a superposition of an averaged critically damped precessional motion and localized higher order spin wave modes. In a square platelet a standing spin wave with a period of 600 ps (1.7 GHz) was observed. At a first glance, the damping coefficient was found to be independent of the shape of the spin-valve element, thus favouring the model of homogeneous rotation and damping. Only by building the difference in the magnetic rotation between the central region and the outer rim of the platelet, the spin wave becomes visible. As they provide an additional efficient channel for energy dissipation, spin waves contribute to a higher effective damping coefficient (alpha = 0.01). Damping and magnetic switching behaviour in spin valves thus depend on the geometry of the element. Micromagnetic simulations reproduce the observed higher-order spin wave mode.rnBesides the short-run behaviour of the magnetization of spin valves Permalloy single layers with thicknesses ranging from 3 to 40 nm have been studied. The phase velocity of a spin wave in a 3 nm thick ellipse could be determined to 8.100 m/s. In a rectangular structure exhibiting a Landau-Lifschitz like domain pattern, the speed of the field pulse induced displacement of a 90°-Néel wall has been determined to 15.000 m/s.rn

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This thesis presents a new approach for the design and fabrication of bond wire magnetics for power converter applications by using standard IC gold bonding wires and micro-machined magnetic cores. It shows a systematic design and characterization study for bond wire transformers with toroidal and race-track cores for both PCB and silicon substrates. Measurement results show that the use of ferrite cores increases the secondary self-inductance up to 315 µH with a Q-factor up to 24.5 at 100 kHz. Measurement results on LTCC core report an enhancement of the secondary self-inductance up to 23 µH with a Q-factor up to 10.5 at 1.4 MHz. A resonant DC-DC converter is designed in 0.32 µm BCD6s technology at STMicroelectronics with a depletion nmosfet and a bond wire micro-transformer for EH applications. Measures report that the circuit begins to oscillate from a TEG voltage of 280 mV while starts to convert from an input down to 330 mV to a rectified output of 0.8 V at an input of 400 mV. Bond wire magnetics is a cost-effective approach that enables a flexible design of inductors and transformers with high inductance and high turns ratio. Additionally, it supports the development of magnetics on top of the IC active circuitry for package and wafer level integrations, thus enabling the design of high density power components. This makes possible the evolution of PwrSiP and PwrSoC with reliable highly efficient magnetics.

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The present thesis is focused on the study of innovative Si-based materials for third generation photovoltaics. In particular, silicon oxi-nitride (SiOxNy) thin films and multilayer of Silicon Rich Carbide (SRC)/Si have been characterized in view of their application in photovoltaics. SiOxNy is a promising material for applications in thin-film solar cells as well as for wafer based silicon solar cells, like silicon heterojunction solar cells. However, many issues relevant to the material properties have not been studied yet, such as the role of the deposition condition and precursor gas concentrations on the optical and electronic properties of the films, the composition and structure of the nanocrystals. The results presented in the thesis aim to clarify the effects of annealing and oxygen incorporation within nc-SiOxNy films on its properties in view of the photovoltaic applications. Silicon nano-crystals (Si NCs) embedded in a dielectric matrix were proposed as absorbers in all-Si multi-junction solar cells due to the quantum confinement capability of Si NCs, that allows a better match to the solar spectrum thanks to the size induced tunability of the band gap. Despite the efficient solar radiation absorption capability of this structure, its charge collection and transport properties has still to be fully demonstrated. The results presented in the thesis aim to the understanding of the transport mechanisms at macroscopic and microscopic scale. Experimental results on SiOxNy thin films and SRC/Si multilayers have been obtained at macroscopical and microscopical level using different characterizations techniques, such as Atomic Force Microscopy, Reflection and Transmission measurements, High Resolution Transmission Electron Microscopy, Energy-Dispersive X-ray spectroscopy and Fourier Transform Infrared Spectroscopy. The deep knowledge and improved understanding of the basic physical properties of these quite complex, multi-phase and multi-component systems, made by nanocrystals and amorphous phases, will contribute to improve the efficiency of Si based solar cells.

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In order to reduce the costs of crystalline silicon solar cells, low-cost silicon materials like upgraded metallurgical grade (UMG) silicon are investigated for the application in the photovoltaic (PV) industry. Conventional high-purity silicon is made by cost-intensive methods, based on the so-called Siemens process, which uses the reaction to form chlorosilanes and subsequent several distillation steps before the deposition of high-purity silicon on slim high-purity silicon rods. UMG silicon in contrast is gained from metallurgical silicon by a rather inexpensive physicochemical purification (e.g., acid leaching and/or segregation). However, this type of silicon usually contains much higher concentrations of impurities, especially 3d transition metals like Ti, Fe, and Cu. These metals are extremely detrimental in the electrically active part of silicon solar cells, as they form recombination centers for charge carriers in the silicon band gap. This is why simple purification techniques like gettering, which can be applied between or during solar cell process steps, will play an important role for such low-cost silicon materials. Gettering in general describes a process, whereby impurities are moved to a place or turned into a state, where they are less detrimental to the solar cell. Hydrogen chloride (HCl) gas gettering in particular is a promising simple and cheap gettering technique, which is based on the reaction of HCl gas with transition metals to form volatile metal chloride species at high temperatures.rnThe aim of this thesis was to find the optimum process parameters for HCl gas gettering of 3d transition metals in low-cost silicon to improve the cell efficiency of solar cells for two different cell concepts, the standard wafer cell concept and the epitaxial wafer equivalent (EpiWE) cell concept. Whereas the former is based on a wafer which is the electrically active part of the solar cell, the latter uses an electrically inactive low-cost silicon substrate with an active layer of epitaxially grown silicon on top. Low-cost silicon materials with different impurity grades were used for HCl gas gettering experiments with the variation of process parameters like the temperature, the gettering time, and the HCl gas concentration. Subsequently, the multicrystalline silicon neighboring wafers with and without gettering were compared by element analysis techniques like neutron activation analysis (NAA). It was demonstrated that HCl gas gettering is an effective purification technique for silicon wafers, which is able to reduce some 3d transition metal concentrations by over 90%. Solar cells were processed for both concepts which could demonstrate a significant increase of the solar cell efficiency by HCl gas gettering. The efficiency of EpiWE cells could be increased by HCl gas gettering by approximately 25% relative to cells without gettering. First process simulations were performed based on a simple model for HCl gas gettering processes, which could be used to make qualitative predictions.

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Die Kapillarkraft entsteht durch die Bildung eines Meniskus zwischen zwei Festkörpen. In dieser Doktorarbeit wurden die Auswirkungen von elastischer Verformung und Flϋssigkeitadsorption auf die Kapillarkraft sowohl theoretisch als auch experimentell untersucht. Unter Verwendung eines Rasterkraftmikroskops wurde die Kapillarkraft zwischen eines Siliziumoxid Kolloids von 2 µm Radius und eine weiche Oberfläche wie n.a. Polydimethylsiloxan oder Polyisopren, unter normalen Umgebungsbedingungen sowie in variierende Ethanoldampfdrϋcken gemessen. Diese Ergebnisse wurden mit den Kapillarkräften verglichen, die auf einem harten Substrat (Silizium-Wafer) unter denselben Bedingungen gemessen wurden. Wir beobachteten eine monotone Abnahme der Kapillarkraft mit zunehmendem Ethanoldampfdruck (P) fϋr P/Psat > 0,2, wobei Psat der Sättigungsdampfdruck ist.rnUm die experimentellen Ergebnisse zu erklären, wurde ein zuvor entwickeltes analytisches Modell (Soft Matter 2010, 6, 3930) erweitert, um die Ethanoladsorption zu berϋcksichtigen. Dieses neue analytische Modell zeigte zwei verschiedene Abhängigkeiten der Kapillarkraft von P/Psat auf harten und weichen Oberflächen. Fϋr die harte Oberfläche des Siliziumwafers wird die Abhängigkeit der Kapillarkraft vom Dampfdruck vom Verhältnis der Dicke der adsorbierten Ethanolschicht zum Meniskusradius bestimmt. Auf weichen Polymeroberflächen hingegen hängt die Kapillarkraft von der Oberflächenverformung und des Laplace-Drucks innerhalb des Meniskus ab. Eine Abnahme der Kapillarkraft mit zunehmendem Ethanoldampfdruck hat demnach eine Abnahme des Laplace-Drucks mit zunehmendem Meniskusradius zur folge. rnDie analytischen Berechnungen, fϋr die eine Hertzsche Kontakt-deformation angenommen wurde, wurden mit Finit Element Methode Simulationen verglichen, welche die reale Deformation des elastischen Substrats in der Nähe des Meniskuses explizit berϋcksichtigen. Diese zusätzliche nach oben gerichtete oberflächenverformung im Bereich des Meniskus fϋhrt zu einer weiteren Erhöhung der Kapillarkraft, insbesondere fϋr weiche Oberflächen mit Elastizitätsmodulen < 100 MPa.rn

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Con l’incremento della popolazione mondiale e la conseguente crescita del fabbisogno di energia dovuta a nuovi lavori e sempre più macchinari in circolazione, è insorta l'esigenza di produrre più energia elettrica. A partire dagli anni ’50 numerosi scienziati hanno analizzato il problema energetico e sono giunti alla conclusione che fonti di energia come petrolio, carbone e gas non erano in grado di soddisfare il bisogno umano sul lungo termine e si è quindi passati alla ricerca di altre fonti di energia come il nucleare. Oggi, grazie ad un progetto ed uno studio di circa 50 anni fa – finalizzato alla alimentazione di satelliti geostazionari - , si sta sempre di più affermando la scelta del fotovoltaico, in quanto rappresenta un’energia pulita e facilmente utilizzabile anche nei luoghi dove non è possibile avere un allaccio alla normale rete elettrica. La ricerca di questo nuovo metodo di produrre energia, che tratta la conversione di luce solare in energia elettrica, si è evoluta, differenziando materiali e metodi di fabbricazione delle celle fotovoltaiche, e quindi anche dei moduli fotovoltaici. Con la crescente produzione di apparati elettronici si è arrivati però ad avere un nuovo problema: il consumo sempre maggiore di silicio con un conseguente aumento di prezzo. Negli ultimi anni il prezzo del silicio è significativamente aumentato e questo va a pesare sull’economia del pannello fotovoltaico, dato che questo materiale incide per il 40-50% sul costo di produzione. Per questo motivo si sono voluti trovare altri materiali e metodi in grado di sostituire il silicio per la costruzione di pannelli fotovoltaici, con il seguire di nuovi studi su materiali e metodi di fabbricazione delle celle. Ma data la conoscenza e lo studio dovuto ai vari utilizzi nell’elettronica del silicio, si è anche studiato un metodo per ottenere una riduzione del silicio utilizzato, creando wafer in silicio sempre più sottili, cercando di abbassare il rapporto costo-watt , in grado di abbassare i costi di produzione e vendita.