Investigation of the effect of an increased supervisory signal power in a high-loss loopback monitoring system

We present experimental results for the effect of an increased supervisory signal power in a high-loss loopback supervisory system in an optically amplified wavelength division multiplexing (WDM) transmission line. The study focuses on the investigation of increasing the input power for the supervisory signal and the effect on the co-propagating WDM data signals using different channel spacing. This investigation is useful for determining the power limitation of the supervisory signal if extra power is needed to improve the monitoring. The study also shows the effect of spacing on the quality of the supervisory signal itself because of interaction with adjacent data signals.

Investigation of the effect of an increased supervisory signal power in a high-loss loopback monitoring system

We present experimental results for the effect of an increased supervisory signal power in a high-loss loopback supervisory system in an optically amplified wavelength division multiplexing (WDM) transmission line. The study focuses on the investigation of increasing the input power for the supervisory signal and the effect on the co-propagating WDM data signals using different channel spacing. This investigation is useful for determining the power limitation of the supervisory signal if extra power is needed to improve the monitoring. The study also shows the effect of spacing on the quality of the supervisory signal itself because of interaction with adjacent data signals.

Challenges of developing non-linear devices to achieve the linear Shannon limit

To achieve the Shannon Capacity Limit, we need to develop practical, effective and deployable non-linear devices to invert the non-linear effects of the transmission line. In this work, we will summarise the progress we are making to realise these, specifically looking at optical phase conjugation and phase regenerators as methods to improve non-linear tolerances. © 2014 IEEE.

Full-field feed-forward equalizer with adaptive system optimization

We numerically investigate the combination of full-field detection and feed-forward equalizer (FFE) for adaptive chromatic dispersion compensation up to 2160 km in a 10 Gbit/s on-off keyed optical transmission system. The technique, with respect to earlier reports, incorporates several important implementation modules, including the algorithm for adaptive equalization of the gain imbalance between the two receiver chains, compensation of phase misalignment of the asymmetric Mach-Zehnder interferometer, and simplified implementation of field calculation. We also show that in addition to enabling fast adaptation and simplification of field calculation, full-field FFE exhibits enhanced tolerance to the sampling phase misalignment and reduced sampling rate when compared to the full-field implementation using a dispersive transmission line.

Elastic modulus study of gold thin film for use as an actuated membrane in a superconductive radio frequency (RF) microelectromechanical (MEM) switch

The objective of this research was to find Young's elastic modulus for thin gold films at room and cryogenic temperatures based on the flexional model which has not been previously attempted. Electrical Sonnet simulations and numerical methods using Abacus for the mechanical responses were employed for this purpose. A RF MEM shunt switch was designed and a fabrication process developed in house. The switch is composed of a superconducting YBa2 Cu3O7 coplanar waveguide structure with an Au bridge membrane suspended above an area of the center conductor covered with BaTiO3 dielectric. The Au membrane is actuated by the electrostatic attractive force acting between the transmission line and the membrane when voltage is applied. The value of the actuation force will greatly depend on the switch pull-down voltage and on the geometry and mechanical properties of the bridge material. Results show that the elastic modulus for Au thin film can be 484 times higher at cryogenic temperature than it is at room temperature. ^

Temperature dependence and characterization of gold thin film actuated membranes for radio frequency microelectromechanical switches

Over the last 10 years, the development and the understanding of the mechanical properties of thin film material have been essential for improving the reliability and lifetime in operation of microelectromechanical systems (MEMS). Although the properties of a bulk material might be well characterized, thin-film properties are considerably different from those of the bulk and it cannot be assumed that mechanical properties measured using bulk specimens will apply to the same materials when used as a thin film in MEMS. For many microelectronic thin films, the material properties depend strongly on the details of the deposition process and the growth conditions on its substrate. ^ The purpose of this dissertation is to determine the temperature dependence of a gold thin film membrane on the pull down voltage of a MEMS switch as the temperature is varied from room temperature (300 K) to cryogenic temperature (10 K). For this purpose, an RF MEMS shunt switch was designed and fabricated. The switch is composed of a gold coplanar waveguide structure with a gold bridge membrane suspended above an area of the center conductor which is covered by a dielectric (BaTiO3). The gold membrane is actuated by an electrostatic force acting between the transmission line and the membrane when voltage is applied. ^ Material characterization of the gold evaporated thin film membrane was obtained via AFM, SEM, TEM and X-ray diffraction analyses. A mathematical relation was used to estimate the pull down voltage of the switch at cryogenic temperature and results showed that the mathematical theory match the experimental values of the tested MEMS switches. ^

Elastic modulus study of gold thin film for use as an actuated membrane in a superconductive radio frequency (RF) MicroElectroMechanical (MEM) switch

The objective of this research was to find Young's elastic modulus for thin gold films at room and cryogenic temperatures based on the flexional model which has not been previously attempted. Electrical Sonnet simulations and numerical methods using Abacus for the mechanical responses were employed for this purpose. A RF MEM shunt switch was designed and a fabrication process developed in house. The switch is composed of a superconducting YBa2Cu3O7 coplanar waveguide structure with an Au bridge membrane suspended above an area of the center conductor covered with BaTiO3 dielectric. The Au membrane is actuated by the electrostatic attractive force acting between the transmission line and the membrane when voltage is applied. The value of the actuation force will greatly depend on the switch pull-down voltage and on the geometry and mechanical properties of the bridge material. Results show that the elastic modulus for Au thin film can be 484 times higher at cryogenic temperature than it is at room temperature.

Estudo de arranjos de antenas de microfita com Patch quase-fractal para comunicações sem fio

In this dissertation, are presented two microstrip antennas and two arrays for applications in wireless communication systems multiband. Initially, we studied an antenna and a linear array consisting of two elements identical to the patch antenna isolated. The shape of the patch used in both structures is based on fractal geometry and has multiband behavior. Next a new antenna is analyzed and a new array such as initial structure, but with the truncated ground plane, in order to obtain better bandwidths and return loss. For feeding the structures, we used microstrip transmission line. In the design of planar structures, was used HFSS software for the simulation. Next were built and measures electromagnetic parameters such as input impedance and return loss, using vector network analyzer in the telecommunications laboratory of Federal University of Rio Grande do Norte. The experimental results were compared with the simulated and showed improved return loss for the first array and also appeared a fourth band and increased directivity compared with the isolated antenna. The first two benefits are not commonly found in the literature. For structures with a truncated ground planes, the technique improved impedance matching, bandwidth and return loss when compared to the initial structure with filled ground planes. Moreover, these structures exhibited a better distribution of frequency, facilitating the adjustment of frequencies. Thus, it is expected that the planar structures presented in this study, particularly arrays may be suitable for specific applications in wireless communication systems when frequency multiband and wideband transmission signals are required.

Study of Periodic and Quasi-Periodic Structures in Silicon-on-Insulator

In this thesis, a numerical design approach has been proposed and developed based on the transmission matrix method in order to characterize periodic and quasi-periodic photonic structures in silicon-on-insulator. The approach and its performance have been extensively tested with specific structures in 2D and its validity has been verified in 3D.

Investigations on the Radiation Characteristics of Broadband Strip Loaded Slotted Microstrip Antennas

With the recent progress and rapid increase in mobile terminals, the design of antennas for small mobile terminals is acquiring great importance. In view of this situation, several design concepts are already been addressed by the scientists and engineers. Compactness and efficiency are the major criteria for mobile terminal antennas. The challenging task of the microwave scientists and engineers is to device compact printed radiating systems having broadband behavior, together with good efficiency. Printed antenna technology has received popularity among antenna scientists after the introduction of microstrip antenna in 1970s. The successors in this kind such as printed monopoles and planar inverted F are also equally important. Scientists and Engineers are trying to explore this technology as a viable coast effective solution for forthcoming microwave revolution. The transmission line perspectives of antennas are very interesting. The concept behind any electromagnetic radiator is simple. Any electromagnetic system with a discontinuity is radiating electromagnetic energy. The size, shape and the orientation of the discontinuities controls the radiation characteristics of the system such as radiation pattern, gain, polarization etc. It can be either resonant or non resonant structure.

Ground Plane Slot Structures for Isolation of Cosited Microstrip Antennas

Ground plane slot structures have been shown to reduce coupling between cosited antennas. Although some such structures have already been reported, no analytical model exists to describe their behavior and there are no design guidelines. In this work, the behavior of reported ground plane structures is used as a clue to obtain generalizable information about such structures' behavior. The structures' scalability and excitation behavior is investigated. Next a circuit model is derived that describes the interaction of microstrip patch antennas with a ground plane slot structure based on mutual admittances between the ground plane slots and the effective slots at the antennas' radiating edges. The circuit model leads to design guidelines for the ground plane slot structure and an approximate relationship between mutual admittances which must be satisfied in order to isolate the antennas. Finally, we present a novel ground plane slot structure that mitigates some of the disadvantages of earlier designs.

High performance terahertz resonant tunnelling diode sources and broadband antenna for air-side radiation

Resonant tunnelling diode (RTD) is known to be the fastest electronics device that can be fabricated in compact form and operate at room temperature with potential oscillation frequency up to 2.5 THz. The RTD device consists of a narrow band gap quantum well layer sandwiched between two thin wide band gap barriers layers. It exhibits negative differential resistance (NDR) region in its current-voltage (I-V) characteristics which is utilised in making oscillators. Up to date, the main challenge is producing high output power at high frequencies in particular. Although oscillation frequencies of ~ 2 THz have been already reported, the output power is in the range of micro-Watts. This thesis describes the systematic work on the design, fabrication, and characterisation of RTD-based oscillators in microwave/millimetre-wave monolithic integrated circuits (MMIC) form that can produce high output power and high oscillation frequency at the same time. Different MMIC RTD oscillator topologies were designed, fabricated, and characterised in this project which include: single RTD oscillator which employs one RTD device, double RTDs oscillator which employs two RTD devices connected in parallel, and coupled RTD oscillators which combine the powers of two oscillators over a single load, based on mutual coupling and which can employ up to four RTD devices. All oscillators employed relatively large size RTD devices for high power operation. The main challenge was to realise high oscillation frequency (~ 300 GHz) in MMIC form with the employed large sized RTD devices. To achieve this aim, proper designs of passive structures that can provide small values of resonating inductances were essential. These resonating inductance structures included shorted coplanar wave guide (CPW) and shorted microstrip transmission lines of low characteristics impedances Zo. Shorted transmission line of lower Zo has lower inductance per unit length. Thus, the geometrical dimensions would be relatively large and facilitate fabrication by low cost photolithography. A series of oscillators with oscillation frequencies in the J-band (220 – 325 GHz) range and output powers from 0.2 – 1.1 mW have been achieved in this project, and all were fabricated using photolithography. Theoretical estimation showed that higher oscillation frequencies (> 1 THz) can be achieved with the proposed MMIC RTD oscillators design in this project using photolithography with expected high power operation. Besides MMIC RTD oscillators, reported planar antennas for RTD-based oscillators were critically reviewed and the main challenges in designing high performance integrated antennas on large dielectric constant substrates are discussed in this thesis. A novel antenna was designed, simulated, fabricated, and characterised in this project. It was a bow-tie antenna with a tuning stub that has very wide bandwidth across the J-band. The antenna was diced and mounted on a reflector ground plane to alleviate the effect of the large dielectric constant substrate (InP) and radiates upwards to the air-side direction. The antenna was also investigated for integration with the all types of oscillators realised in this project. One port and two port antennas were designed, simulated, fabricated, and characterised and showed the suitability of integration with the single/double oscillator layout and the coupled oscillator layout, respectively.

The development of planar high-K/III-V p-channel MOSFETs for post-silicon CMOS

Conventional Si complementary-metal-oxide-semiconductor (CMOS) scaling is fast approaching its limits. The extension of the logic device roadmap for future enhancements in transistor performance requires non-Si materials and new device architectures. III-V materials, due to their superior electron transport properties, are well poised to replace Si as the channel material beyond the 10nm technology node to mitigate the performance loss of Si transistors from further reductions in supply voltage to minimise power dissipation in logic circuits. However several key challenges, including a high quality dielectric/III-V gate stack, a low-resistance source/drain (S/D) technology, heterointegration onto a Si platform and a viable III-V p-metal-oxide-semiconductor field-effect-transistor (MOSFET), need to be addressed before III-Vs can be employed in CMOS. This Thesis specifically addressed the development and demonstration of planar III-V p-MOSFETs, to complement the n-MOSFET, thereby enabling an all III-V CMOS technology to be realised. This work explored the application of InGaAs and InGaSb material systems as the channel, in conjunction with Al2O3/metal gate stacks, for p-MOSFET development based on the buried-channel flatband device architecture. The body of work undertaken comprised material development, process module development and integration into a robust fabrication flow for the demonstration of p-channel devices. The parameter space in the design of the device layer structure, based around the III-V channel/barrier material options of In_x≥0.53Ga_1-xAs/In_0.52Al_0.48As and In_x≥0.1Ga_1-xSb/AlSb, was systematically examined to improve hole channel transport. A mobility of 433 cm²/Vs, the highest room temperature hole mobility of any InGaAs quantum-well channel reported to date, was obtained for the In_0.85Ga_0.15As (2.1% strain) structure. S/D ohmic contacts were developed based on thermally annealed Au/Zn/Au metallisation and validated using transmission line model test structures. The effects of metallisation thickness, diffusion barriers and de-oxidation conditions were examined. Contacts to InGaSb-channel structures were found to be sensitive to de-oxidation conditions. A fabrication process, based on a lithographically-aligned double ohmic patterning approach, was realised for deep submicron gate-to-source/drain gap (L_side) scaling to minimise the access resistance, thereby mitigating the effects of parasitic S/D series resistance on transistor performance. The developed process yielded gaps as small as 20nm. For high-k integration on GaSb, ex-situ ammonium sulphide ((NH₄)₂S) treatments, in the range 1%-22%, for 10min at 295K were systematically explored for improving the electrical properties of the Al₂O₃/GaSb interface. Electrical and physical characterisation indicated the 1% treatment to be most effective with interface trap densities in the range of 4 - 10×10¹²cm^-2eV^-1 in the lower half of the bandgap. An extended study, comprising additional immersion times at each sulphide concentration, was further undertaken to determine the surface roughness and the etching nature of the treatments on GaSb. A number of p-MOSFETs based on III-V-channels with the most promising hole transport and integration of the developed process modules were successfully demonstrated in this work. Although the non-inverted InGaAs-channel devices showed good current modulation and switch-off characteristics, several aspects of performance were non-ideal; depletion-mode operation, modest drive current (I_d,sat=1.14mA/mm), double peaked transconductance (g_m=1.06mS/mm), high subthreshold swing (SS=301mV/dec) and high on-resistance (R_on=845kΩ.μm). Despite demonstrating substantial improvement in the on-state metrics of I_d,sat (11×), g_m (5.5×) and R_on (5.6×), inverted devices did not switch-off. Scaling gate-to-source/drain gap (L_side) from 1μm down to 70nm improved I_d,sat (72.4mA/mm) by a factor of 3.6 and gm (25.8mS/mm) by a factor of 4.1 in inverted InGaAs-channel devices. Well-controlled current modulation and good saturation behaviour was observed for InGaSb-channel devices. In the on-state In_0.3Ga_0.7Sb-channel (I_d,sat=49.4mA/mm, g_m=12.3mS/mm, R_on=31.7kΩ.μm) and In_0.4Ga_0.6Sb-channel (I_d,sat=38mA/mm, g_m=11.9mS/mm, R_on=73.5kΩ.μm) devices outperformed the InGaAs-channel devices. However the devices could not be switched off. These findings indicate that III-V p-MOSFETs based on InGaSb as opposed to InGaAs channels are more suited as the p-channel option for post-Si CMOS.

Wave impedance selection for passivity-based bilateral teleoperation

When a task must be executed in a remote or dangerous environment, teleoperation systems may be employed to extend the influence of the human operator. In the case of manipulation tasks, haptic feedback of the forces experienced by the remote (slave) system is often highly useful in improving an operator's ability to perform effectively. In many of these cases (especially teleoperation over the internet and ground-to-space teleoperation), substantial communication latency exists in the control loop and has the strong tendency to cause instability of the system. The first viable solution to this problem in the literature was based on a scattering/wave transformation from transmission line theory. This wave transformation requires the designer to select a wave impedance parameter appropriate to the teleoperation system. It is widely recognized that a small value of wave impedance is well suited to free motion and a large value is preferable for contact tasks. Beyond this basic observation, however, very little guidance exists in the literature regarding the selection of an appropriate value. Moreover, prior research on impedance selection generally fails to account for the fact that in any realistic contact task there will simultaneously exist contact considerations (perpendicular to the surface of contact) and quasi-free-motion considerations (parallel to the surface of contact). The primary contribution of the present work is to introduce an approximate linearized optimum for the choice of wave impedance and to apply this quasi-optimal choice to the Cartesian reality of such a contact task, in which it cannot be expected that a given joint will be either perfectly normal to or perfectly parallel to the motion constraint. The proposed scheme selects a wave impedance matrix that is appropriate to the conditions encountered by the manipulator. This choice may be implemented as a static wave impedance value or as a time-varying choice updated according to the instantaneous conditions encountered. A Lyapunov-like analysis is presented demonstrating that time variation in wave impedance will not violate the passivity of the system. Experimental trials, both in simulation and on a haptic feedback device, are presented validating the technique. Consideration is also given to the case of an uncertain environment, in which an a priori impedance choice may not be possible.

Circuit Quantum Electrodynamics with Transmon Qubits in the Ultrastrong Coupling Regime

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