Wet oxidation of biomass for chemical production

Tämän kandidaatintyön tarkoituksena oli tutkia märkähapetusprosessia jätevesien käsittely-menetelmänä ja mahdollisena menetelmänä kemikaalien tuottamiseksi jätevesistä. Erityishuomio on kiinnitetty paperiteollisuudessa syntyviin jätevesiin. Teoriaosassa käsitellään vesikiertoja paperitehtaassa, paperitehtaalla syntyvän jäteveden ominaisuuksia sekä itse märkähapetusprosessia. Märkähapetusprosessissa perehdytään tavalliseen happea käyttävään märkähapetukseen sekä vetyperoksidia käyttävään menetelmään sekä näissä prosesseissa syntyviin väli- ja lopputuotteisiin. Märkähapetus (WO) on terminen hapetusmenetelmä, jolla voidaan käsitellä jätevesiä, jotka ovat liian konsentroituja biologisiin käsittelyihin tai jotka ovat huonosti biohajoavia. Märkähapetuksen tarkoituksena on parantaa molekulaarisen hapen ja orgaanisen aineen välistä kontaktia, jolloin orgaaninen aines pilkkoutuu muodostaen pääasiassa karboksyylihappoja, aldehydejä, hiilidioksidia ja vettä. Märkähapetuksessa hapettavana kaasuna voidaan käyttää joko puhdasta happea tai ilmaa. Vetyperoksidia käyttävässä märkähapetuksessa (WPO) hapettava kaasu on korvattu nestemäisellä vetyperoksidilla. Kokeellisessa osassa tutkittiin orgaanisen aineksen hapetusta käyttäen Fentonin reagenssia, jolloin katalyyttina reaktiossa toimii rautaionit (Fe2+ ja Fe3+) ja hapettimena vetyperoksidi. Hapetettavana jätevetenä käytettiin paperitehtaan hiomolta saatua kiertovettä, TMP-vettä. Hapetuskokeita tehtiin eri vetyperoksidin annoksilla ja katalyytin määrillä eri lämpötiloissa. Hapetuksen jälkeen näytteistä mitattiin kemiallinen hapenkulutus (COD), orgaanisen hiilen kokonaismäärä (TOC) sekä pH. Lisäksi näytteistä määritettiin nestekromatografilla (HPLC) tyypillisten välituotteiden, kuten oksaalihapon, muurahaishapon ja etikkahapon, määrät. Tehdyissä kokeissa COD-arvoja saatiin pienennettyä 50-88 % siten, että suodatetuissa näytteissä muutos oli suurempi kuin suodattamattomissa näytteissä. Lisäksi TOC-arvot laskivat 28-58 %. Tehdyissä kokeissa saatiin myös tuotettua välituotteina karboksyylihappoja, joista etikkahappoa ja oksaalihappoa tuotettiin suurimmat määrät. Myös muurahaishappoa ja meripihkahappoa saatiin tuotettua.

Production of Chemicals from Woody Biomass by Wet Oxidation

The production of chemicals from sawdust by wet oxidation has been investigated. Two different concentrations of sawdust; 54054 mg/l and 32683 mg/l were used in the study. The wet oxidation operating conditions were; 175 deg.C – 225 deg.C, 1MPa Oxygen, and 40 minutes to 120 minutes reaction time. Carboxylic acids were among the chemicals produced in the process. The total yield of carboxylic acids was found to increase with temperature. Also, higher yields of carboxylic acids were observed at a lower sawdust concentration. This was probably due to the high oxygen-biomass ratio at lower sawdust concentration. Higher oxygen availability at low sawdust concentration resulted in increased conversion of the sawdust; hence the higher yields of carboxylic acids. At lower sawdust concentration, a total carboxylic acid yield of 25.59 wt% was attained at 200 deg.C and 40 minutes reaction time. At higher sawdust concentration, a total carboxylic acid yield of 15.57 wt% was attained at 200 deg.C and 40-minutes reaction time. The carboxylic acids identified include formic acid, acetic acid, succinic acid and oxalic acid. The optimum temperature for the production of formic acid was found to be 200 deg.C, while the optimum temperature for the production of acetic acid was found to be 225 deg.C. A temperature of 225 deg.C and relatively short reaction time of 10 minutes was found to be the optimal condition for the production of succinic acid. Formic acid was produced in the highest yield, with an optimal yield of 13.69wt %, when the reaction temperature and time are 200 deg.C and 40 minutes respectively. The yield of formic acid was found to decrease significantly when further increasing the temperature to 225 deg.C. This was presumably due to thermal decomposition of formic acid at relatively higher temperature. However, the yield of acetic acid was found to steadily increase with temperature. This is because acetic is more thermally stable than formic acid. The yield of acetic acid did not decrease after the temperature was increased to 225 deg.C. Optimal yield of acetic acid (7.98wt %) was achieved at; 225 deg.C, and 40 minutes reaction time. Succinic acid was produced only at temperatures of 200 deg.C and 225 deg.C. Optimal yield of succinic acid (5.66wt %) was attained under the following conditions; 32683 mg/l, 225 deg.C, 1MPa O2, and 10-minutes reaction time. Oxalic acid was produced in the lowest yield and, less frequently. The optimal yield of oxalic acid (4.02 wt%) was attained at 175 deg.C and 80-minutes of reaction time The Total Organic Carbon (TOC) is found to be higher when increasing the operating temperature, thus suggesting that more organic compounds are formed at higher temperatures. The identified carboxylic acids could only account for less than 30% of the measured COD content of the various wet oxidation samples. This implies that some other unidentified compounds (reaction products) must have been present. In general, wet oxidation seems to be an effective method for converting lignocellulosic biomass into useful chemicals. Relatively higher temperatures have been found to favor the production of carboxylic acids from sawdust.

Silicon-containing species in used lube oil re-refining

Nowadays, the re-refining of the used lube oils has gained worldwide a lot of attention due to the necessity for added environmental protection and increasingly stringent environmental legislation. One of the parameters determining the quality of the produced base oils is the composition of feedstock. Estimation of the chemical composition of the used oil collected from several European locations showed that the hydrocarbon structure of the motor oil is changed insignificantly during its operation and the major part of the changes is accounted for with depleted oil additives. In the lube oil re-refining industry silicon, coming mainly from antifoaming agents, is recognized to be a contaminant generating undesired solid deposits in various locations in the re-refining units. In this thesis, a particular attention was paid to the mechanism of solid product formation during the alkali treatment process of silicon-containing used lube oils. The transformations of a model siloxane, tetramethyldisiloxane (TMDS), were studied in a batch reactor at industrially relevant alkali treatment conditions (low temperature, short reaction time) using different alkali agents. The reaction mechanism involving solid alkali metal silanolates was proposed. The experimental data obtained demonstrated that the solids were dominant products at low temperature and short reaction time. The liquid products in the low temperature reactions were represented mainly by linear siloxanes. The prolongation of reaction time resulted in reduction of solids, whereas both temperature and time increase led to dominance of cyclic products in the reaction mixture. Experiments with the varied reaction time demonstrated that the concentration of cyclic trimer being the dominant in the beginning of the reaction diminished with time, whereas the cyclic tetramer tended to increase. Experiments with lower sodium hydroxide concentration showed the same effect. In addition, a decrease of alkali agent concentration in the initial reaction mixture accelerated TMDS transformation reactions resulting in solely liquid cyclic siloxanes yields. Comparison of sodium and potassium hydroxides applied as an alkali agent demonstrated that potassium hydroxide was more efficient, since the activation energy in KOH presence was almost 2-fold lower than that for sodium hydroxide containing reaction mixture. Application of potassium hydroxide for TMDS transformation at 100° C with 3 hours reaction time resulted in 20 % decrease of solid yields compared to NaOH-containing mixture. Moreover, TMDS transformations in the presence of sodium silanolate applied as an alkali agent led to formation of only liquid products without formation of the undesired solids. On the basis of experimental data and the proposed reaction mechanism, a kinetic model was developed, which provided a satisfactory description of the experimental results. Suitability of the selected siloxane as a relevant model of industrial silicon-containing compounds was verified by investigation of the commercially available antifoam agent in base-catalyzed conditions.

New aspects in limestone dissolution for wet flue gas desulfurization

Fortsättningsvis tillgodoses största delen av världens energibehov genom förbränning av fossila bränslen, dessutom forsätter världens totala energibehov att öka. Eftersom förbränning av fossila bränslen som t.ex. olja och kol orsakar utsläpp av svaveldioxid som är skadligt för både människa och natur, finns det fortfarande ett akut behov av forskning och utveckling av metoder för svavelrening. De vanligaste teknikerna för svavelrening är våt- och semitorrskrubbning, där svaveldioxiden absorberas av en skrubbervätska. Det är allmänt känt att våtskrubbning är en av de effektivaste teknikerna för svavelrening både ekonomiskt och tekniskt sett samt den mest använda. Våtskrubbningsprocessen har dock flera nackdelar, som dess höga vatten- och energiförbrukning. I större kraftverk går ca 1-3% av dess eleffekt åt till rökgasreningsprocessen, vilket kraftigt motiverar utveckling av nya reningsprocesser samt effektivering av existerande reningsanläggningar. Skrubbervätskan som till huvudsak består av vatten innehåller vanligtvis även kalcium vars syfte är att binda svavlet. Kalciumet kan tillsättas i flera former varav bränd kalk och kalksten är de vanligaste formerna. Kalksten används ofta i svavelreningsprocessen p.g.a. dess låga pris och för att den ger upphov till den användbara biprodukten gips. Kalkstenens upplösningshastighet är en de av faktorer som kraftigast påverkar reningsprocessen. En detaljerad experimentell karakterisering och analys av kalkstenspartiklar i fast form och i vätskeform har utförts i detta arbete. En experimentell metod för att studera kalkstenens upplösningshastighet vid låg till obegränsad massöverföring har även utvecklats i detta arbete. Metoden möjliggör identifieringen av systemoberoende kinetiska parametrar, vilka kan användas för att undersöka reningsprocesser samt för att planera nya reningsanläggningar. Kinetiska modeller utvecklades genom att använda kalkstenpartiklars specifika yta, som mättes genom kväveadsorption. Efter att de kinetiska parametrarna bestämts experimentellt utvecklades en skrubbermodell för att optimera en i driftvarande skrubber. Genom att kombinera experimentellt bestämda modeller med matematisk optimering erhölls en djupare insikt i hur olika råmaterial påverkar processen och hur driftparameterar bör justeras för att minska elförbrukningen.

Exchange reactions of organic halides and organo-silicon compounds with boron tribromide and boron triiodide

Reactions of the boron halides with organic halides and organo-silicon compounds have been investigated. The results show exchange of halogens between the BX3 (X = Br# 1) and the organic halidef exchange of the halogen of the C-X bond being proved. The rates of halogen exchange vary. Reaction of the heavier halides with organo-silicon compounds indicated that the silicon-carbon bonds ruptured in the absence of electronegative atom attached to the silicon. The presence of an electronegative atom (halogen or oxygen) attached to the silicon causes the bond between the silicon and the electronegative atom to be preferentially broken. Products of exchange reactions of the boron halides and the organic halides or the organo-silicon compounds were studied by use of 1H NMR and GC/MS. From these results some possible mechanisms for the exchange reactions are postulated, but further work is indicated to prove the real courses of the reactions

Polytypism and Silicon carbide : a solid state nuclear magnetic resonance study

A survey of predominantly industrial silicon carbide has been carried out using Magic Angle Spinning nuclear magnetic resonance (MAS nmr); a solid state technique. Three silicon carbide polytypes were studied; 3C, 6H, and 15R. The 13C and 29 Si MAS nmr spectra of the bulk SiC sample was identified on the basis of silicon (carbon) site type in the d iff ere n t pol Y t Y pes • Out to 5.00 A fro mac en t r a lsi 1 i con (0 r carbon) atom four types of sites were characterized using symmetry based calculations. This method of polytype analysis was also considered, in the prelminary stages, for applications with other polytypic material; CdBr 2 , CdI 2 , and PbI 2 " In an attempt to understand the minor components of silicon carbide, such as its surface, some samples were hydrofluoric acid washed and heated to extreme temperatures. Basically, an HF removable species which absorbs at -110 ppm (Si0 2 ) in the 29 Si MAS nmr spectrum is found in silicon carbide after heating. Other unidentified peaks observed at short recycle delays in some 29 Si MAS nmr spectra are considered to be impurities that may be within the lattice. These components comprise less than 5% of the observable silicon. A Tl study was carried out for 29 Si nuclei in a 3C ii polytype sample, using the Driven Equilibrium Single-Pulse Observation of T1 (DESPOT) technique. It appears as though there are a number of nuclei that have the same chemical shift but different T1 relaxation times. The T1 values range from 30 seconds to 11 minutes. Caution has to be kept when interpreting these results because this is the first time that DESPOT has been used for solid samples and it is not likely in full working order. MAS nmr indicates that the 13C and 29 Si ~sotropic chemical shifts of silicon carbide appear to have a reciprocal type of relationship_ Single crystal nmr analysis of a 6H sample is accordance with this finding when only the resultant isotropic shift is considered. However, single crystal nmr also shows that the actual response of the silicon and carbon nuclear environment to the applied magnetic field at various angles is not at all reciprocal. Such results show that much more single crystal nmr work is required to determine the actual behavior of the local magnetic environment of the SiC nuclei.

Élaboration d’un simulateur de gravure par plasma de haute densité basé sur une approche cellulaire pour l’étude de profils dans divers matériaux

La réalisation de dispositifs à des dimensions sous-micrométriques et nanométriques demande une maîtrise parfaite des procédés de fabrication, notamment ceux de gravure. La réalisation des ces dispositifs est complexe et les exigences en termes de qualité et de géométrie des profils de gravure imposent de choisir les conditions opératoires les mieux adaptées. Les simulations de l'évolution spatio-temporelle des profils de gravure que nous proposons dans cette thèse s'inscrivent parfaitement dans ce contexte. Le simulateur que nous avons réalisé offre la possibilité de mieux comprendre les processus qui entrent en jeu lors de la gravure par plasma de profils dans divers matériaux. Il permet de tester l'influence des paramètres du plasma sur la forme du profil et donc de déterminer les conditions opératoires optimales. La mise au point de ce simulateur s'appuie sur les concepts fondamentaux qui gouvernent la gravure par plasma. À partir de l'état des lieux des différentes approches numériques pouvant être utilisées, nous avons élaboré un algorithme stable et adaptable permettant de mettre en évidence l'importance de certains paramètres clés pour la réalisation de profils de gravure par un plasma à haute densité et à basse pression. Les capacités de cet algorithme ont été testées en étudiant d'une part la pulvérisation de Si dans un plasma d'argon et d'autre part, la gravure chimique assistée par les ions de SiO2/Si dans un plasma de chlore. Grâce aux comparaisons entre profils simulés et expérimentaux, nous avons montré l'importance du choix de certains paramètres, comme la nature du gaz utilisé et la pression du plasma, la forme initiale du masque, la sélectivité masque/matériau, le rapport de flux neutre/ion, etc. Nous avons aussi lié ces paramètres à la formation de défauts dans les profils, par exemple celle de facettes sur le masque, de parois concaves, et de micro-tranchées. Enfin, nous avons montré que le phénomène de redépôt des atomes pulvérisés entre en compétition avec la charge électrique de surface pour expliquer la formation de profils en V dans le Pt pulvérisé par un plasma d'argon.

Analyse des processus de dérive lors de la gravure profonde du silicium dans des plasmas SF6 et C4F8

L’objectif de ce mémoire de maîtrise est de développer des outils de diagnostics non-invasifs et de caractériser in-situ les dérives de procédé dans un réacteur industriel utilisé en production pour la gravure profonde du silicium par le procédé Bosch. Ce dernier repose sur l’alternance d’un plasma de SF6 pour la gravure isotrope du Si et d’un plasma de C4F8 pour la passivation des parois dans l’optique d’obtenir des tranchées profondes et étroites. Dans un premier temps, nous avons installé une sonde courant-tension sur la ligne de transmission du signal rf au porte-substrat pour l’étude de son impédance caractéristique et un spectromètre optique pour l’étude de l’émission optique du plasma. Nos travaux ont montré que l’évolution temporelle de l’impédance constitue un excellent moyen pour identifier des changements dans la dynamique du procédé, notamment une gravure complète de la photorésine. De plus, à partir des spectres d’émission, nous avons pu montrer que des produits carbonés sont libérés du substrat et des parois lors de l’alternance passivation/gravure et que ceux-ci modifient considérablement la concentration de fluor atomique dans le plasma. Dans un second temps, nous avons développé un réacteur à « substrat-tournant » pour l’analyse in-situ des interactions plasma-parois dans le procédé Bosch. Nos travaux sur ce réacteur visaient à caractériser par spectrométrie de masse l’évolution temporelle des populations de neutres réactifs et d’ions positifs. Dans les conditions opératoires étudiées, le SF6 se dissocie à près de 45% alors que le degré de dissociation du C4F8 atteint 70%. Le SF6 est avant tout dissocié en F et SF3 et l’ion dominant est le SF3+ alors que le C4F8 est fragmenté en CF, CF3 et CF4 et nous mesurons plusieurs ions significatifs. Dans les deux cas, la chaîne de dissociation demeure loin d’être complète. Nous avons noté une désorption importante des parois de CF4 lors du passage du cycle de passivation au cycle de gravure. Un modèle d’interactions plasmas-parois est proposé pour expliquer cette observation.

Young’s modulus of silicon nitride used in scanning force microscope cantilevers

The Young’s modulus and Poisson’s ratio of high-quality silicon nitride films with 800 nm thickness, grown on silicon substrates by low-pressure chemical vapor deposition, were determined by measuring the dispersion of laser-induced surface acoustic waves. The Young’s modulus was also measured by mechanical tuning of commercially available silicon nitride cantilevers, manufactured from the same material, using the tapping mode of a scanning force microscope. For this experiment, an expression for the oscillation frequencies of two-media beam systems is derived. Both methods yield a Young’s modulus of 280–290 GPa for amorphous silicon nitride, which is substantially higher than previously reported (E5146 GPa). For Poisson’s ratio, a value of n 50.20 was obtained. These values are relevant for the determination of the spring constant of the cantilever and the effective tip–sample stiffness

Wet peroxide oxidation of phenol over mixed pillared montmorillonites

Wet peroxide oxidation (WPO) of phenol is an effective means for the production of diphenols, which are of great industrial importance. An added advantage of this method is the removal of phenol from wastewater effluents. Hydroxylation of phenol occurs efficiently over mixed iron aluminium pillared montmorillonites. An initial induction period is noticed in all cases. A thorough study on the reaction variables suggests free radical mechanism for the reaction.

Evanescent wave sensor to monitor the etching rate of an optical fibre

The design and development of an evanescent wave sensor to determine the etching rate of the core of an optical fibre is discussed in this paper. The working of the device is based on the principle of propagation and loss of the evanescent wave in the cladding region of the fibre. The fraction of light intensity creeping out of the core of an uncladded fibre is a function of the core radius. As this radius decreases, the evanescent wave coupling to the medium surrounding the core enhances. This results in a decrease of the transmitted light intensity through the fibre. This technique is useful to design and fabricate optical fibres with different core geometries.

Functionalized Silicon Polymers: Novel Materials for Catalysis

Dept.of Applied Chemistry,Cochin University of Science and Technolgy

Electrical switching studies on the thin films of polyfuran and polyacrylonitrile prepared by plasma polymerisation and vacuum evaporated amorphous silicon

This thesis Entitled Electrical switching studies on the thin flims of polyfuran and polyacrylonitrile prepared by plasma polymerisation and vacuum evaporated amorphous silicon.A general introduction to the switching and allied phenomena is presented. Subsequently, developments of switching in thin films are described. The Mott transition is qualitatively presented. The working of a switching transitor is outlined and compared to the switching observed in thin films. Characteristic parameters of switching such as threshold voltage, time response to a, voltage pulse, and delay time are described. The various switching configurations commonly used are discussed. The mechanisms used to explain the switching behaviour like thermal, electrothermal and purely electronic are reviewed. Finally the scope, feasibility and the importance of polymer thin films in switching are highlighted.

Elecrical conduction and dielectric behaviour of thin films of vacuum evaporated amorphous silicon, hydrogenated amorphous silicon and chemically deposited cadmium sulphide

A brief account of the several methods used for the production of thin films is presented in this Chapter. The discussions stress on the important methods used for the fabrication of a-si:H thin films. This review' also reveals ‘that almost all the general methods, like vacuum evaporation, sputtering, glow discharge and even chemical methods are currently employed for the production of a-Si:H thin films. Each method has its own advantages and disadvantages. However, certain methods are generally preferred. Subsequently a detailed account of the method used here for the preparation of amorphous silicon thin films and their hydrogenation is presented. The metal chamber used for the electrical and dielectric measurements is also described. A brief mention is made-on the electrode structure, film area and film geometry.