962 resultados para SYMPATHETIC ACTIVATION
Resumo:
In mammals, trefoil factor family (TFF) proteins are involved in mucosal maintenance and repair, and they are also implicated in tumor suppression and cancer progression. A novel two domain TFF protein from frog Bombina maxima skin secretions (Bm-TFF2) has been purified and cloned. It activated human platelets in a dose-dependent manner and activation of integrin a(11b)beta(3) was involved. Aspirin and apyrase did not largely reduce platelet response to Bm-TFF2 (a 30% inhibition), indicating that the aggregation is not substantially dependent on ADP and thromboxane A2 autocrine feedback. Elimination of external Ca2+ with EGTA did not influence the platelet aggregation induced by Bm-TFF2, meanwhile a strong calcium signal (cytoplasmic Ca2+ release) was detected, suggesting that activation of phospholipase C (PLC) is involved. Subsequent immunoblotting revealed that, unlike in platelets activated by stejnulxin (a glycoprotein VI agonist), PLC gamma 2 was not phosphorylated in platelets activated by Bm-TFF2. FITC-labeled Bm-TFF2 bound to platelet membranes. Bm-TFF2 is the first TFF protein reported to possess human platelet activation activity. (c) 2005 Elsevier Inc. All rights reserved.
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Phenoloxidase in shrimp and lobster is shown to exist in latent form which could be activated by trypsin and by an endogenous enzyme with tryptic activity. On Sephadex G-100 gel, three isoenzymes, differing in molecular weights, were isolated from naturally activated lobster shell extracts. Mechanism of activation of ptephenoloxidase involving limited proteolysis by the activating enzyme to form isoenzymes has been proposed.
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Gelling times of polyester resins with varying quantities of catalyst and accelerator were studied and the results reported in this communication.
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Humans are able to stabilize their movements in environments with unstable dynamics by selectively modifying arm impedance independently of force and torque. We further investigated adaptation to unstable dynamics to determine whether the CNS maintains a constant overall level of stability as the instability of the environmental dynamics is varied. Subjects performed reaching movements in unstable force fields of varying strength, generated by a robotic manipulator. Although the force fields disrupted the initial movements, subjects were able to adapt to the novel dynamics and learned to produce straight trajectories. After adaptation, the endpoint stiffness of the arm was measured at the midpoint of the movement. The stiffness had been selectively modified in the direction of the instability. The stiffness in the stable direction was relatively unchanged from that measured during movements in a null force field prior to exposure to the unstable force field. This impedance modification was achieved without changes in force and torque. The overall stiffness of the arm and environment in the direction of instability was adapted to the force field strength such that it remained equivalent to that of the null force field. This suggests that the CNS attempts both to maintain a minimum level of stability and minimize energy expenditure.
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Somatic cell nuclear transfer (SCNT) is a remarkable process in which a somatic cell nucleus is acted upon by the ooplasm via mechanisms that today remain unknown. Here we show the developmental competence (% blastocyst) of embryos derived from SCNT (21%)
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Functional glycine receptors (GlyRs) are enriched in the hippocampus, but their roles in synaptic transmission are unclear. In this study, we examined the effect of GlyR activation on paired-pulse stimulation of the whole-cell postsynaptic currents (PSCs)
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Superimposed on the activation of the embryonic genome in the preimplantation mouse embryo is the formation of a transcriptionally repressive state during the two-cell stage. This repression appears mediated at the level of chromatin structure, because it is reversed by inducing histone hyperacetylation or inhibiting the second round of DNA replication. We report that of more than 200 amplicons analyzed by mRNA differential display, about 45% of them are repressed between the two-cell and four-cell stages. This repression is scored as either a decrease in amplicon expression that occurs between the two-cell and four-cell stages or on the ability of either trichostatin A tan inhibitor of histone deacetylases) or aphidicolin tan inhibitor of replicative DNA polymerases) to increase the level of amplicon expression. Results of this study also indicate that about 16% of the amplicons analyzed likely are novel genes whose sequence doesn't correspond to sequences in the current databases, whereas about 20% of the sequences expressed during this transition likely are repetitive sequences. Lastly, inducing histone hyperacetylation in the two-cell embryos inhibits cleavage to the four-cell stage. These results suggest that genome activation is global and relatively promiscuous and that a function of the transcriptionally repressive state is to dictate the appropriate profile of gene expression that is compatible with further development.
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Nostoc sphaeroides Kuetzing has been used as a traditional medicine in China to treat a variety of ailments. This research identified the antioxidant activities of polysaccharide extract from Nostoc sphaeroides. The extract, which contains 46.2% carbohydrates, exhibited an effective scavenging capability on superoxide radical, hydroxyl radicals in non site-specific as well as site-specific assays, and also performed lipid peroxidation inhibition in a dose-dependent manner. Polysaccharide extract had no 1,1-diphenyl-2-picrylhydrazyl radical scavenging potential at all test concentrations. Activities of superoxide dismutase, catalase, and glutathione peroxidase in human embryo kidney 293 cells were increased effectively when Nostoc sphaeroides extract was applied. These results suggested that the use of N. sphaeroides in treating ailments may be based on the antioxidant capacities of polysaccharide composition.
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The ability to generate a permanent, stable magnetic field unsupported by an electromotive force is fundamental to a variety of engineering applications. Bulk high temperature superconducting (HTS) materials can trap magnetic fields of magnitude over ten times higher than the maximum field produced by conventional magnets, which is limited practically to rather less than 2 T. In this paper, two large c-axis oriented, single-grain YBCO and GdBCO bulk superconductors are magnetized by the pulsed field magnetization (PFM) technique at temperatures of 40 and 65 K and the characteristics of the resulting trapped field profile are investigated with a view of magnetizing such samples as trapped field magnets (TFMs) in situ inside a trapped flux-type superconducting electric machine. A comparison is made between the temperatures at which the pulsed magnetic field is applied and the results have strong implications for the optimum operating temperature for TFMs in trapped flux-type superconducting electric machines. The effects of inhomogeneities, which occur during the growth process of single-grain bulk superconductors, on the trapped field and maximum temperature rise in the sample are modelled numerically using a 3D finite-element model based on the H-formulation and implemented in Comsol Multiphysics 4.3a. The results agree qualitatively with the observed experimental results, in that inhomogeneities act to distort the trapped field profile and reduce the magnitude of the trapped field due to localized heating within the sample and preferential movement and pinning of flux lines around the growth section regions (GSRs) and growth sector boundaries (GSBs), respectively. The modelling framework will allow further investigation of various inhomogeneities that arise during the processing of (RE)BCO bulk superconductors, including inhomogeneous Jc distributions and the presence of current-limiting grain boundaries and cracks, and it can be used to assist optimization of processing and PFM techniques for practical bulk superconductor applications. © 2014 IOP Publishing Ltd.
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We have investigated the annealing and activation of silicon implanted in both as-grown Fe-doped semi-insulating (SI) InP substrate and undoped SI InP substrate obtained by annealing high purity conductive InP wafer (wafer-annealed). Si implantations were performed at an energy of 500 keV and a dose of 1 X 10(15) cm(-2). Following the implantations, rapid thermal annealing (RTA) cycles were carried out for 30 s at different temperatures. The results of Raman measurements show that for 700degreesC/30s RTA, the two Si-implanted SI InP substrates have acquired a high degree of lattice recovery and electrical activation. However, further Hall measurements indicate that the carrier concentration of the wafer-annealed SI InP substrate is about three times higher than that of the as-grown Fe-doped SI InP substrate. The difference can be ascribed to the low Fe concentration of the wafer-annealed SI InP substrate.These experimental data imply that the use of the wafer-annealed SI InP substrate can be conducive to the improvement of InP-based device performances. (C) 2003 Elsevier Ltd. All rights reserved.
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An improved pulsed rapid thermal annealing method has been used to crystallize amorphous silicon films prepared by PECVD. The solid-phase crystallization and dopant activation process can be completed with time-temperature budgets such as 10 cycles of 60-s 550 degrees C thermal bias/l-s 850 degrees C thermal pulse. A mean grain size more than 1000 Angstrom and a Hall mobility of 24.9 cm(2)/V s are obtained in the crystallized films. The results indicate that this annealing method possesses the potential for fabricating large-area and good-quality polycrystalline silicon films on low-cost glass substrate. (C) 1998 Elsevier Science B.V. All rights reserved.
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We have investigated the temperature dependence of photoluminescence (PL) properties of a number of InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 monolayer (ML) to 3 ML. The temperature dependence of the InAs exciton energy and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger than the critical thickness around 1.7 ML, indicating spontaneous formation of quantum dots (QDs). A model, involving exciton recombination and thermal activation and transfer, is proposed to explain the experimental data. In the PL thermal quenching study, the measured thermal activation energies of different samples demonstrate that the InAs wetting layer may act as a barrier for thermionic emission of carriers in high quality InAs multilayers, while in InAs monolayers and submonolayers the carriers are required to overcome the GaAs barrier to thermally escape from the localized states. (C) 1998 Academic Press Limited.
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The rapid thermal annealing temperature dependence of the recrystallization, Yb migration and its optical activation were studied for Yb-implanted silicon. For the annealing regime 800-1000-degrees-C, the Yb segregates both at the crystal/amorphous interface and at the surface, which is different from the usual segregation of Er at the crystal/amorphous interface, and the efficiency of optical activation also increases with annealing temperature. However, the amorphous layer regrows completely and no photoluminescence is observed after the annealing at 1200-degrees-C.
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In this paper we report on the first results of epitaxial growth of GaN layers on GaAs (100) substrates using a modified MBE system, equipped with a DC-plasma source for nitrogen activation in configuration of reverse magnetron at ultra-low pressures.