Ultra-low friction coefficient in alumina-silicon nitride pair lubricated with water

In a ball-on-disc wear test, an alumina ceramic body sliding against a silicon nitride ceramic body in water achieved an ultra-low friction coefficient (ULFC) of 0.004. The profilometer and EDX measurements indicated that the ULFC regime in this unmated Al2O3-Si3N4 pair was achieved because of the formation of a flat and smooth interface of nanometric roughness, which favored the hydrodynamic lubrication. The triboreactions formed silicon and aluminum hydroxides which contributed to decrease roughness and shear stress at the contact interface. This behavior enables the development of low energy loss water-based tribological systems using oxide ceramics. 13 2012 Elsevier B.V. All rights reserved.

A complete CMOS UWB timed-array transmitter with a 3D Vivaldi antenna array for electronic high-resolution beam spatial scanning

We present a new Ultra Wide Band (UWB) Timed- Array Transmitter System with Beamforming capability for high-resolution remote acquisition of vital signals. The system consists of four identical channels, where each is formed of a serial topology with three modules: programmable delay circuit (PDC or τ), a novel UWB 5th Gaussian Derivative order pulse generator circuit (PG), and a planar Vivaldi antenna. The circuit was designed using 0.18μm CMOS standard process and the planar antenna array was designed with filmconductor on Rogers RO3206 substrate. Spice simulations results showed the pulse generation with 104 mVpp amplitude and 500 ps width. The power consumption is 543 μW, and energy consumption 0.27 pJ per pulse using a 2V power supply at a pulse repetition rate (PRR) of 100 MHz. Electromagnetic simulations results, using CST Microwave (MW) Studio 2011, showed the main lobe radiation with a gain maximum of 13.2 dB, 35.5º x 36.7º angular width, and a beam steering between 17º and -11º for azimuthal (θ) angles and 17º and -18º for elevation (φ) angles at the center frequency of 6 GHz

Diseño de un Amplificador de Bajo Ruido de Ultra Banda Ancha para un Receptor de UWB en CMOS 0.35 μm

Presentación del Proyecto Fin de Carrera titulado "Diseño de un Amplificador de Bajo Ruido de Ultra Banda Ancha para un Receptor de UWB en CMOS 0.35 μm"

Diseño, medida y verificación de un mezclador en CMOS 0.35 um para un receptor basado en el estándar IEEE 802.11a

Proyecto y presentación del Proyecto Fin de Carrera titulado "Diseño, medida y verificación de un mezclador en CMOS 0.35 um para un receptor basado en el estándar IEEE 802.11a"

Diseño de un mezclador pasivo en CMOS 0.35 um para un receptor basado en el estándar IEE802.11a

Memoria y presentación del Proyecto Fin de Carrera titulado "Diseño de un mezclador pasivo en CMOS 0.35 um para un receptor basado en el estándar IEE802.11a"

Diseño de un amplificador operacional totalmente integrado CMOS que funcione como driver para cargas capacitivas elevadas

Presentación del Proyecto Fin de Carrera titulado "Diseño de un Amplificador Operacional totalmente integrado CMOS que funcione como driver para cargas capacitivas elevadas"

Diseño de un convertidor de corriente en tecnología CMOS 0.35

Proyecto y presentación del Proyecto Fin de Carrera titulado "Diseño de un convertidor de corriente en tecnología CMOS 0.35"

Diseño del Amplificador de Bajo Ruido y del Mezclador para un Receptor de UWB en CMOS 0.18um

Especialidad: Sistemas electrónicos

Diseño de un mezclador basado en convertidores de corriente en tecnología CMOS 0.18UM

Proyecto y presentación del Proyecto Fin de Carrera titulado "DISEÑO DE UN MEZCLADOR BASADO EN CONVERTIDORES DE CORRIENTE EN TECNOLOGÍA CMOS 0.18UM"

Diseño de un filtro integrado sintonizable en tecnología CMOS 0.35μm

Especialidad: Sistemas Electrónicos

CMOS RF front-end receivers for DVB-SH

Programa de doctorado: Ingeniería de Telecomunicación Avanzada.

4H silicon carbide particle detectors: study of the defects induced by high energy neutron irradiation

During the last decade advances in the field of sensor design and improved base materials have pushed the radiation hardness of the current silicon detector technology to impressive performance. It should allow operation of the tracking systems of the Large Hadron Collider (LHC) experiments at nominal luminosity (1034 cm-2s-1) for about 10 years. The current silicon detectors are unable to cope with such an environment. Silicon carbide (SiC), which has recently been recognized as potentially radiation hard, is now studied. In this work it was analyzed the effect of high energy neutron irradiation on 4H-SiC particle detectors. Schottky and junction particle detectors were irradiated with 1 MeV neutrons up to fluence of 1016 cm-2. It is well known that the degradation of the detectors with irradiation, independently of the structure used for their realization, is caused by lattice defects, like creation of point-like defect, dopant deactivation and dead layer formation and that a crucial aspect for the understanding of the defect kinetics at a microscopic level is the correct identification of the crystal defects in terms of their electrical activity. In order to clarify the defect kinetic it were carried out a thermal transient spectroscopy (DLTS and PICTS) analysis of different samples irradiated at increasing fluences. The defect evolution was correlated with the transport properties of the irradiated detector, always comparing with the un-irradiated one. The charge collection efficiency degradation of Schottky detectors induced by neutron irradiation was related to the increasing concentration of defects as function of the neutron fluence.