899 resultados para Rapid Technologien
Resumo:
The production of colour by homogenised fish material in a simplified sugar medium containing and acid indicator has been made use of for the rapid approximation of bacterial load in such products. The medium thus developed contains poptone, tryptone, yeast extract, sodium chloride and beef extract besides dextrose. The time of colour production is influenced to some extent by the level of sodium chloride in the medium and is almost always inversely proportional to the bacterial load in the homogenate.
Resumo:
Results of the studies carried out to elucidate the factors influencing colour production from the sugar medium used for the rapid approximation of bacterial counts in fishery products are reported. The effect of particle size, trace elements, salt soluble protein and non-protein fractions, rate of multiplication of bacteria, in the medium, surface bacteria and the rate of colour production by individual strains of bacteria were studied. It is observed that the best results are obtained when a sea-water homogenate is used.
Resumo:
The annealing of ion implantation damage in silicon by rapid isothermal heating has been monitored by the time resolved reflectivity (TRR) method. This technique was applied simultaneously at a wavelength of 632. 8nm and also at 1152nm, where the optical absorption coefficient of silicon is less. The two wavelength method simplifies the interpretation of TRR results, extends the measurement depth and allows good resolution of the position of the interface between amorphous and crystalline silicon. The regrowth of amorphous layers in silicon, created by self implantation and implanted with electrically active impurities, was observed. Regrowth in rapid isothermal annealing occurs during the heating up stage of typical thermal cycles. Impurities such as B, P, and As increase the regrowth rate in a manner consistent with a vacancy model for regrowth. The maximum regrowth rate in boron implanted silicon is limited by the solid solubility.
Resumo:
The crystal quality of 0.3-μm-thick as-grown epitaxial silicon-on-sapphire (SOS) was improved using solid-phase epitaxy (SPE) by implantation with silicon to 1015 ions/cm2 at 175 keV and rapid annealing using electron-beam heating, n-channel and p-channel transistormobilities increased by 31 and 19 percent, respectively, and a reduction in ring-oscillator stage delay confirmed that crystal defects near the upper silicon surface had been removed. Leakage in n-channel transistors was not significantly affected by the regrowth process but for p-channel transistors back-channel leakage was considerably greater than for the control devices. This is attributed to aluminum released by damage to the sapphire during silicon implantation. © 1985 IEEE
Resumo:
Implants of boron into silicon which has been made amorphous by silicon implantation have a shallower depth profile than the same implants into silicon. This results in higher activation and restricted diffusion of the B implants after annealing, and there are also significant differences in the microstructure after annealing compared with B implants into silicon. Rapid isothermal heating with an electron beam and furnace treatments are used to characterize the defect structure as a function of time and temperature. Defects are seen to influence the diffusion of non-substitutional boron.
Resumo:
NYD-SP12 is a recently identified spermatogenesis-related gene with a pivotal role in human testis development. In this study, we analyzed between-species divergence and within-species variation of NYD-SP12 in seven representative primate species, four wo