Effect of convection on domain growth during demixing transitions in fluids

Current analytical work on the effect of convection on the late stages of spinodal decomposition in liquids is briefly described. The morphology formed during the spinodal decomposition process depends on the relative composition of the two species. Droplet spinodal decomposition occurs when the concentration of one of the species is small. Convective transport has a significant effect on the scaling laws in the late-stage coarsening of droplets in translational or shear flows. In addition, convective transport could result in an attractive interaction between non-Brownian droplets which could lead to coalescence. The effect of convective transport for the growth of random interfaces in a near-symmetric quench was analysed using an area distribution function, which gives the distribution of surface area of the interface in curvature space. It was found that the curvature of the interface decreases proportional to time t in the late stages of spinodal decomposition, and the surface area also decreases proportional to t.

Experimental investigation of link between growth and decay of fiber Bragg gratings

We report here an experimental investigation for establishing and quantifying a link between the growth and decay characteristics of fiber Bragg gratings. One of the key aspects of our work is the determination of the defect energy distribution from the grating characteristics measured during their fabrication. We observe a strong correlation between the growth-based defect energy distribution and that obtained through accelerated aging experiments, paving the way for predicting the decay characteristics of fiber Bragg gratings from their growth data. Such a prediction is significant in simplifying the postfabrication steps required to enhance the thermal stability of fiber Bragg gratings. (c) 2011 Optical Society of America

Total Factor Productivity Growth and Output Growth in Indian Electronics Industry in the Liberalization Era: An Empirical Examination

This paper analyses the efficiency and productivity growth of Electronics industry, which is considered one of the vibrant and rapidly growing manufacturing industry sub-sectors of India in the liberalization era since 1991. The main objective of the paper is to examine the extent and growth of Total Factor Productivity (TFP) and its components namely, Technical Efficiency Change (TEC) and Technological Progress (TP) and its contribution to total output growth. In this study, the electronics industry is broadly classified into communication equipments, computer hardware, consumer electronics and other electronics, with the purpose of performing a comparative analysis of productivity growth for each of these sub-sectors for the time period 1993-2004. The paper found that the sub-sectors have improved in terms of economies of scale and contribution of capital.The change in technical efficiency and technological progress moved in reverse directions. Three of the four industry witnessed growth in the output primarily due to TFPG and the contribution of input growth to output growth had been negative/negligible, except for Computer hardware where contribution from both input growth and TFPG to output growth were prominent. The paper explored the possible reasons that addressed the issue of low technical efficiency and technological progress in the industry.

Interdiffusion and Growth of the Phases in CoNi/Mo and CoNi/W Systems

Deleterious topological-closed-packed (tcp) phases grow in the interdiffusion zone in turbine blades mainly because of the addition of refractory elements such as Mo and W in the Ni- and Co-based superalloys. CoNi/Mo and CoNi/W diffusion couples are prepared to understand the growth mechanism of the phases in the interdiffusion zone. Instead of determining the main and cross-interdiffusion coefficients following the conventional method, we preferred to determine the average effective interdiffusion coefficients of two elements after fixing the composition of one element more or less the same in the interdiffusion zone. These parameters can be directly related to the growth kinetics of the phases and shed light on the atomic mechanism of diffusion. In both systems, the diffusion rate of elements and the phase layer thickness increased because of the addition of Ni in the solid solution phase, probably because of an increase in driving force. On the other hand, the growth rate of the mu phase and the diffusion coefficient of the species decreased because of the addition of Ni. This indicates the change in defect concentration, which assists diffusion. Further, we revisited the previously published Co-Ni-Mo and Co-Ni-W ternary phase diagrams and compared them with the composition range of the phases developed in the interdiffusion zone. Different composition ranges of the tcp phases are found, and corrected phase diagrams are shown. The outcome of this study will help to optimize the concentration of elements in superalloys to control the growth of the tcp phases.

Synthesis of one-dimensional N-doped Ga2O3 nanostructures: different morphologies and different mechanisms

N-doped monoclinic Ga2O3 nanostructures of different morphologies have been synthesized by heating Ga metal in ambient air at 1150 degrees C to 1350 degrees C for 1 to 5 h duration. Neither catalyst nor any gas flow has been used for the synthesis of N-doped Ga2O3 nanostructures. The morphology was controlled by monitoring the curvature of the Ga droplet. Plausible growth mechanisms are discussed to explain the different morphology of the nanostructures. Elemental mapping by electron energy loss spectroscopy of the nanostructures indicate uniform distribution of Ga, O and N. It is interesting to note that we have used neither nitride source nor any gas flow but the synthesis was carried out in ambient air. We believe that ambient nitrogen acts as the source of nitrogen. Unintentional nitrogen doping of the Ga2O3 nanostructures is a straightforward method and such nanostructures could be promising candidates for white light emission.

Vapor-liquid-solid growth of Si nanowires: A kinetic analysis

A steady state kinetic model has been developed for the vapor-liquid-solid growth of Si whiskers or nanowires from liquid catalyst droplets. The steady state is defined as one in which the net injection rate of Si into the droplet is equal to the ejection rate due to wire growth. Expressions that represent specific mechanisms of injection and ejection of Si atoms from the liquid catalyst droplet have been used and their relative importance has been discussed. The analysis shows that evaporation and reverse reaction rates need to be invoked, apart from just surface cracking of the precursor, in order to make the growth rate radius dependent. When these pathways can be neglected, the growth rate become radius independent and can be used to determine the activation energies for the rate limiting step of heterogeneous precursor decomposition. The ejection rates depend on the mechanism of wire growth at the liquid-solid interface or the liquid-solid-vapor triple phase boundary. It is shown that when wire growth is by nucleation and motion of ledges, a radius dependence of growth rate does not just come from the Gibbs-Thompson effect on supersaturation in the liquid, but also from the dependence of the actual area or length available for nucleation. Growth rates have been calculated using the framework of equations developed and compared with experimental results. The agreement in trends is found to be excellent. The same framework of equations has also been used to account for the diverse pressure and temperature dependence of growth rates reported in the literature. © 2012 American Institute of Physics.

Uninterrupted and reusable source for the controlled growth of nanowires

Generally, the length of the oxide nanowires grown by vapor phase transport is limited by the degradation of the source materials. Furthermore, the source material is used once for the nanowires growth. By exploiting the Si-Zn phase diagram, we have developed a simple methodology for the non-catalytic growth of ultralong ZnO nanowires in large area with controllable aspect ratio and branched structures. The insolubility of Zn in Si and the use of a Si cap on the Zn source to prevent local source oxidation of Zn (i.e. prevents the degradation of the source) are the keys to grow longer nanowires without limitations. It has been shown that the aspect ratio can be controlled by thermodynamically (temperature) and more importantly by kinetically (vapor flux). One of the interesting findings is that the same source material can be used for several depositions of oxide nanostructured materials.

A novel DNA intercalator, 8-methoxy pyrimido4 `,5 `:4,5]thieno (2,3-b)quinoline-4(3H)-one induces apoptosis in cancer cells, inhibits the tumor progression and enhances lifespan in mice with tumor

Polycyclic aromatic molecules such as ellipticine intercalate into double-stranded DNA and interfere with physiological functions. In the present study, we evaluate the chemotherapeutic potential of MPTQ on animal models and its mode of action. In order to test the antitumor activity, monohydrochloride of MPTQ was orally administered in mice bearing tumor. Results showed a significant inhibition of tumor growth compared to that of untreated controls. More importantly, mean lifespan of tumor bearing animals treated with MPTQ was significantly higher as compared to that of untreated tumor bearing mice suggesting that the treatment affected viability of cancerous cells, but not of normal cells. Consistent with this, we find that administration of MPTQ to normal mice did not cause any major side effects as observed upon hematological and serum profiling. We also found that MPTQ induces cytotoxicity in cancer cell lines, by activating apoptosis both by intrinsic and extrinsic pathways. Thus, MPTQ could be used as a potential cancer therapeutic agent.

Interfacial growth as a model of tube-width heterogeneities in concentrated solutions of stiff polymers

Recent experimental measurements of the distribution P(w) of transverse chain fluctuations w in concentrated solutions of F-actin filaments B. Wang, J Guan, S. M. Anthony, S. C. Bae, K. S. Schweizer, and S. Granick, Phys. Rev. Lett. 104, 118301 (2010); J. Glaser, D. Chakraborty, K. Kroy, I. Lauter, M. Degawa, N. Kirchgessner, B. Hoffmann, R. Merkel, and M. Giesen, Phys. Rev. Lett. 105, 037801 (2010)] are shown to be well-fit to an expression derived from a model of the conformations of a single harmonically confined weakly bendable rod. The calculation of P(w) is carried out essentially exactly within a path integral approach that was originally applied to the study of one-dimensional randomly growing interfaces. Our results are generally as successful in reproducing experimental trends as earlier approximate results obtained from more elaborate many-chain treatments of the confining tube potential.

Interfacial growth as a model of tube-width heterogeneities in concentrated solutions of stiff polymers

Recent experimental measurements of the distribution P(w) of transverse chain fluctuations w in concentrated solutions of F-actin filaments B. Wang, J Guan, S. M. Anthony, S. C. Bae, K. S. Schweizer, and S. Granick, Phys. Rev. Lett. 104, 118301 (2010); J. Glaser, D. Chakraborty, K. Kroy, I. Lauter, M. Degawa, N. Kirchgessner, B. Hoffmann, R. Merkel, and M. Giesen, Phys. Rev. Lett. 105, 037801 (2010)] are shown to be well-fit to an expression derived from a model of the conformations of a single harmonically confined weakly bendable rod. The calculation of P(w) is carried out essentially exactly within a path integral approach that was originally applied to the study of one-dimensional randomly growing interfaces. Our results are generally as successful in reproducing experimental trends as earlier approximate results obtained from more elaborate many-chain treatments of the confining tube potential. (C) 2013 AIP Publishing LLC.

Effects of initial height on the steady-state persistence probability of linear growth models

The effects of the initial height on the temporal persistence probability of steady-state height fluctuations in up-down symmetric linear models of surface growth are investigated. We study the (1 + 1)-dimensional Family model and the (1 + 1)-and (2 + 1)-dimensional larger curvature (LC) model. Both the Family and LC models have up-down symmetry, so the positive and negative persistence probabilities in the steady state, averaged over all values of the initial height h(0), are equal to each other. However, these two probabilities are not equal if one considers a fixed nonzero value of h(0). Plots of the positive persistence probability for negative initial height versus time exhibit power-law behavior if the magnitude of the initial height is larger than the interface width at saturation. By symmetry, the negative persistence probability for positive initial height also exhibits the same behavior. The persistence exponent that describes this power-law decay decreases as the magnitude of the initial height is increased. The dependence of the persistence probability on the initial height, the system size, and the discrete sampling time is found to exhibit scaling behavior.

Neoarchean continental growth through arc magmatism in the Nilgiri Block, southern India

The formation and growth of continental crust in the Archean have been evaluated through models of subduction-accretion and mantle plume. The Nilgiri Block in southern India exposes exhumed Neoarchean lower crust, uplifted to heights of 2500 m above sea level along the north western margin of the Peninsula. Major lithologies in this block include charnockite with or without garnet, anorthosite-gabbro suite, pyroxenite, amphibolite and hornblende-biotite gneiss (TTG). All these rock types are closely associated as an arc magmatic suite, with diffuse boundaries and coeval nature. The charnockite and hornblende-biotite gneisses (TTG) show SiO2 content varying from 64 to 73 wt.%. The hornblende-biotite gneisses (TTG) are high-Al type with Al2O3 >15 wt.% whereas the charnockites show Al2O3 <15 wt.%. The composition of charnockite is mainly magnesian and calcic to calc-alkaline. The mafic-ultramafic rocks show composition close to that of tholeiitic series. The low values of K(2)o (<3 wt.%), (K/Rb)/K2O (<500), Zr/Ti, and trace element ratios like (La/Yb)n/(Sr/Y), (Y/Nb), (Y + Nb)/Rb, (Y+Ta)/Rb, Yb/Ta indicate a volcanic arc signature for these rocks. The geochemical signature is consistent with arc magmatic rocks generated through oceanic plate subduction. The primitive mantle normalized trace element patterns of these rocks display enrichment in large ion lithophile elements (LILE) and comparable high field strength elements (HFSE) in charnockite and hornblende-biotite gneisses (TTG) consistent with subduction-related origin. Primitive mantle normalized REE pattern displays an enrichment in LREE in the chamockite and hornblende-biotite gneisses (TTG) as compared to a flat pattern for the mafic rocks. The chondrite normalized REE patterns of zircons of all the rock types reveal cores with high HREE formed at ca. 2700 Ma and rims with low HREE formed at 2500-2450 Ma. Log-transformed La/Th-Nb/Th-Sm/Th-Yb/Th discrimination diagram for the mafic and ultramafic rocks from Nilgiri displays a transition from mid-oceanic ridge basalt (MORB) to island arc basalt (IAB) suggesting a MORB source. The U-Pb zircon data from the charnockites, mafic granulites and hornblende-biotite gneisses (TTG) presented in our study show that the magma generation during subduction and accretion events in this block occurred at 2700-2500 Ma. Together with the recent report on Neoarchean supra-subduction zone ophiolite suite at its southern margin, the Nilgiri Block provides one of the best examples for continental growth through vertical stacking and lateral accretion in a subduction environment during the Neoarchean. (c) 2014 Elsevier B.V. All rights reserved.

Methylation Silencing of ULK2, an Autophagy Gene, Is Essential for Astrocyte Transformation and Tumor Growth

Glioblastoma (GBM) is the most aggressive type of brain tumor and shows very poor prognosis. Here, using genome-wide methylation analysis, we show that G-CIMP+ and G-CIMP-subtypes enrich distinct classes of biological processes. One of the hypermethylated genes in GBM, ULK2, an upstream autophagy inducer, was found to be down-regulated in GBM. Promoter hypermethylation of ULK2 was confirmed by bisulfite sequencing. GBM and glioma cell lines had low levels of ULK2 transcripts, which could be reversed upon methylation inhibitor treatment. ULK2 promoter methylation and transcript levels showed significant negative correlation. Ectopic overexpression of ULK2-induced autophagy, which further enhanced upon nutrient starvation or temozolomide chemotherapy. ULK2 also inhibited the growth of glioma cells, which required autophagy induction as kinase mutant of ULK2 failed to induce autophagy and inhibit growth. Furthermore, ULK2 induced autophagy and inhibited growth in Ras-transformed immortalized Baby Mouse Kidney (iBMK) ATG5(+/+) but not in autophagy-deficient ATG5(-/-) cells. Growth inhibition due to ULK2 induced high levels of autophagy under starvation or chemotherapy utilized apoptotic cell death but not at low levels of autophagy. Growth inhibition by ULK2 also appears to involve catalase degradation and reactive oxygen species generation. ULK2 overexpression inhibited anchorage independent growth, inhibited astrocyte transformation in vitro and tumor growth in vivo. Of all autophagy genes, we found ULK2 and its homologue ULK1 were only down-regulated in all grades of glioma. Thus these results altogether suggest that inhibition of autophagy by ULK1/2 down-regulation is essential for glioma development.

Seeded-growth, nanocrystal-fusion, ion-exchange and inorganic-ligand mediated formation of semiconductor-based colloidal heterostructured nanocrystals

This article highlights different synthetic strategies for the preparation of colloidal heterostructured nanocrystals, where at least one component of the constituent nanostructure is a semiconductor. Growth of shell material on a core nanocrystal acting as a seed for heterogeneous nucleation of the shell has been discussed. This seeded-growth technique, being one of the most heavily explored mechanisms, has already been discussed in many other excellent review articles. However, here our discussion has been focused differently based on composition (semiconductor@semiconductor, magnet@semiconductor, metal@semiconductor and vice versa), shape anisotropy of the shell growth, and synthetic methodology such as one-step vs. multi-step. The relatively less explored strategy of preparing heterostructures via colloidal sintering of different nanostructures, known as nanocrystal-fusion, has been reviewed here. The ion-exchange strategy, which has recently attracted huge research interest, where compositional tuning of nanocrystals can be achieved by exchanging either the cation or anion of a nanocrystal, has also been discussed. Specifically, controlled partial ion exchange has been critically reviewed as a viable synthetic strategy for the fabrication of heterostructures. Notably, we have also included the very recent methodology of utilizing inorganic ligands for the fabrication of heterostructured colloidal nanocrystals. This unique strategy of inorganic ligands has appeared as a new frontier for the synthesis of heterostructures and is reviewed in detail here for the first time. In all these cases, recent developments have been discussed with greater detail to add upon the existing reviews on this broad topic of semiconductor-based colloidal heterostructured nanocrystals.

Characterization of Interactions Involving Bromine in 2,2-Dibromo2,3-dihydroinden-1-one via Experimental Charge Density Analysis

Experimental and theoretical charge density analyses on 2,2-dibromo-2,3-dihydroinden-1-one have been carried out to quantify the topological features of a short CBr....O halogen bond with nearly linear geometry (2.922 angstrom, angle CBr....O = 172.7 degrees) and to assess the strength of the interactions using the topological features of the electron density. The electrostatic potential map indicates the presence of the s-hole on bromine, while the interaction energy is comparable to that of a moderate OH....O hydrogen bond. In addition, the energetic contribution of CH.....Br interaction is demonstrated to be on par with that of the CBr....O halogen bond in stabilizing the crystal structure.