999 resultados para Moving Interface


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A mathematical model has been developed for the gas carburising (diffusion) process using finite volume method. The computer simulation has been carried out for an industrial gas carburising process. The model's predictions are in good agreement with industrial experimental data and with data collected from the literature. A study of various mass transfer and diffusion coefficients has been carried out in order to suggest which correlations should be used for the gas carburising process. The model has been interfaced in a Windows environment using a graphical user interface. In this way, the model is extremely user friendly. The sensitivity analysis of various parameters such as initial carbon concentration in the specimen, carbon potential of the atmosphere, temperature of the process, etc. has been carried out using the model.

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We report a novel phase behavior in aqueous solutions of simple organic solutes near their liquid/liquid critical points, where a solid-like third phase appears at the liquid/liquid interface. The phenomenon has been found in three different laboratories. It appears in many aqueous systems of organic solutes and becomes enhanced upon the addition of salt to these solutions.

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Polymer composites are generally filled with either fibrous or particulate materials to improve the mechanical properties. In choosing the fillers one looks for materials that are inexpensive and available in abundance, in order to realize a cost reduction also. Also, often these fibres/fillers are treated to improve the matrix adhesion and thereby mechanical properties. The present study is focussed on the influence of water ingression in such filler-modified composites and the attendant changes in the compressive properties. The changes in property effected following exposure to aqueous media and the influence interface modification has on the scenario is emphasized in the work. It is seen that for plain epoxy and fly ash filled systems the strengths are increased following exposure to aqueous media. The composites with surface-treated ash particles, on the other hand, record a drop in the values. Modulus values show are increased to varying degree in unfilled and filled systems. The study also includes a fractographic analysis of the tested samples with and without exposure to water.

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The oscillations of a drop moving in another fluid medium have been studied at low values of Reynolds number and Weber number by taking into consideration the shape of the drop and the viscosities of the two phases in addition to the interfacial tension. The deformation of the drop modifies the Lamb's expression for frequency by including a correction term while the viscous effects split the frequency into a pair of frequencies—one lower and the other higher than Lamb's. The lower frequency mode has ample experimental support while the higher frequency mode has also been observed. The two modes almost merge with Lamb's frequency for the asymptotic cases of a drop in free space or a bubble in a dense viscous fluid but the splitting becomes large when the two fluids have similar properties. Instead of oscillations, aperiodic damping modes are found to occur in drops with sizes smaller than a critical size ($\sim\hat{\rho}\hat{\nu}^2/T $). With the help of these calculations, many of the available experimental results are analyzed and discussed.

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BaTiO3 and Ba0.9Ca0.1TiO3 thin films were deposited on the p – type Si substrate by pulsed excimer laser ablation technique. The Capacitance – Voltage (C-V) measurement measured at 1 MHz exhibited a clockwise rotating hysteresis loop with a wide memory window for the Metal – Ferroelectric – Semiconductor (MFS) capacitor confirming the ferroelectric nature. The low frequency C – V measurements exhibited the response of the minority carriers in the inversion region while at 1 MHz the C – V is of a high frequency type with minimum capacitance in the inversion region. The interface states of both the MFS structures were calculated from the Castagne – Vaipaille method (High – low frequency C – V curve). Deep Level Transient Spectroscopy (DLTS) was used to analyze the interface traps and capture cross section present in the MFS capacitor. There were distinct peaks present in the DLTS spectrum and these peaks were attributed to the presence of the discrete interface states present at the semiconductor – ferroelectric interface. The distribution of calculated interface states were mapped with the silicon energy band gap for both the undoped and Ca doped BaTiO3 thin films using both the C – V and DLTS method. The interface states of the Ca doped BaTiO3 thin films were found to be higher than the pure BaTiO3 thin films.

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Fully atomistic molecular dynamics simulations have been carried out to investigate the correlation of biological activity with dynamics of water molecules in an aqueous protein solution of the toxic domain of enterotoxin (PDB ID: 1ETN). This is a small protein of 13 amino acid residues. Our study of this water soluble protein clearly reveals that water dynamics slows down in the hydration layer. Despite this general slowing down, water molecules in the vicinity of the second beta turn of this protein exhibit faster dynamics than those near other regions of the protein. Since this beta turn is believed to play a critical role in the receptor binding of this protein, the faster dynamics of water near the beta turn m ay have biological significance. The collective orientational dynamics of the water molecules in the protein solution exhibits a characteristic long time component of 27 ps, which agrees well with dielectric relaxation experiments.

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The removal of native oxide from Si (1 1 1) surfaces was investigated by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectra (SIMS) depth profiles. Two different oxide removal methods, performed under ultrahigh-vacuum (UHV) conditions, were carried out and compared. The first cleaning method is thermal desorption of oxide at 900 degrees C. The second method is the deposition of metallic gallium followed by redesorption. A significant decrease in oxygen was achieved by thermal desorption at 900 degrees C under UHV conditions. By applying a subsequent Ga deposition/redesorption, a further reduction in oxygen could be achieved. We examine the merits of an alternative oxide desorption method via conversion of the stable SiO(2) surface oxide into a volatile Ca(2)O oxide by a supply of Ga metals. Furthermore, ultra thin films of pure silicon nitride buffer layer were grown on a Si (1 1 1) surface by exposing the surface to radio-frequency (RF) nitrogen plasma followed by GaN growth. The SIMS depth profile shows that the oxygen impurity can be reduced at GaN/beta-Si(3)N(4)/Si interfaces by applying a subsequent Ga deposition/redesorption. (C) 2011 Elsevier B.V. All rights reserved.

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SrTiO3:Pr3+,Al3+ phosphor samples with varying ratios of Sr/Ti/Al were prepared by the gel-carbonate method and the mechanism of enhancement of the red photoluminescence intensity therein was investigated. The photoluminescence (PL) spectra of SrTiO3:Pr3+ show both D-1(2) --> H-3(4) and P-3(0) --> H-3(4) emission in the red and blue spectral regions, respectively, with comparable intensity. The emission intensity of D-1(2) --> H-3(4) is drastically enhanced by the incorporation of Al3+ and excess Ti4+ in the compositional range Sr(Ti,Al-y)(O3+3y/2):Pr3+ (0.2 less than or equal to y less than or equal to 0.4) and SrTi1+xAlyO3+z:Pr3+ (0.2 less than or equal to x less than or equal to 0.5; 0.05 less than or equal to y less than or equal to 0.1; z = 2x + 3y/2) with the complete disappearance of the blue band. This cannot be explained by the simple point defect model as the EPR studies do not show any evidence for the presence of electron or hole centers. TEM investigations show the presence of exsolved nanophases of SrAl12O19 and/or TiO2 in the grain boundary region as well as grain interiors as lamellae which, in turn, form the solid-state defects, namely, dislocation networks, stacking faults and crystallographic shear planes whereby the framework of corner shared TiO6 octehedra changes over to edge-sharing TiO5-AlO5 strands as indicated from the Al-27 MAS NMR studies. The presence of transitional nanophases and the associated defects modify the excitation-emission processes by way of formation of electronic sub-levels at 3.40 and 4.43 eV, leading to magnetic-dipole related red emission with enhanced intensity. This is evidenced by the fact that SrAl12O19:Pr3+,Ti4+ shows bright red emission whereas SrAl12O19:Pr3+ does not show red photoluminescence.

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A new technique named as model predictive spread acceleration guidance (MPSAG) is proposed in this paper. It combines nonlinear model predictive control and spread acceleration guidance philosophies. This technique is then used to design a nonlinear suboptimal guidance law for a constant speed missile against stationary target with impact angle constraint. MPSAG technique can be applied to a class of nonlinear problems, which leads to a closed form solution of the lateral acceleration (latax) history update. Guidance command assumed is the lateral acceleration (latax), applied normal to the velocity vector. The new guidance law is validated by considering the nonlinear kinematics with both lag-free as well as first order autopilot delay. The simulation results show that the proposed technique is quite promising to come up with a nonlinear guidance law that leads to both very small miss distance as well as the desired impact angle.

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Using a recently developed method named as model predictive static programming (MPSP), a nonlinear suboptimal guidance law for a constant speed missile against a slow moving target with impact angle constraint is proposed. In this paper MPSP technique leads to a closed form solution of the latax history update for the given problem. Guidance command is the latax,which is normal to the missile velocity and the terminal constraints are miss distance and impact angle. The new guidance law is validated by considering the nonlinear kinematics with both lag-free and first order autopilot delay.